Abstract:
The present invention relates to atom probe pulse energy. One aspect of the invention is directed toward a method that includes establishing a data relationship between pulse energy and bias energy for a target evaporation rate. In selected embodiments, establishing a data relationship can include determining an equivalent pulse fraction for a selected pulse energy and bias energy combination based on a local change in bias energy compared to a local change in pulse energy associated with the selected pulse energy and bias energy combination. Another aspect of the invention is directed toward a method that includes determining an equivalent pulse fraction for a first bias energy and pulse energy combination and/or a second bias energy and pulse energy combination based on the difference between the first bias energy and the second bias energy compared to the difference between the first pulse energy and the second pulse energy.
Abstract:
A pulsed laser atom probe having a pulsed UV laser source (10) which focuses light onto a semiconductor tip (28) causing photoionization of atoms on said tip where the ions produced are detected at a position sensitive detector or time of flight detection means (26).
Abstract:
A laser atom probe (100) situates a counter electrode between a specimen mount and a detector (106), and provides a laser (116) having its beam (122) aligned to illuminate the specimen (104) through the aperture (110) of the counter electrode (108). The detector, specimen mount (102), and then be pulsed to bring the specimen to ionization. The timing of the laser pulses may be used to determine ion departure and arrival times allowing determination of the mass-to-charge ratios of the ions, thus their identities. Automated alignment methods are described wherein the laser is automatically directed to areas of interest.
Abstract:
A three dimensional atom probe comprising a sharp specimen (10) coupled to a mounting means (12) where emission of charged particles is caused by application of a potential to the specimen tip (10) such that charged particles are influenced by filtering electrodes (206, 204) before impingement on a detection screen (202).
Abstract:
A charged particle beam apparatus is provided which comprises a charged particle source (1) for producing a primary beam of charged particles, aperture means (2) for collimating said primary beam of charged particles, wherein said aperture means is adapted to switch between a collimation of said primary beam to a width appropriate for serial imaging of a sample (8) as well as a collimation of said primary beam to a width appropriate for parallel imaging of said sample (8), a condenser lens (3) for condensing said primary beam of charged particles, scanning means (5) for deflecting said primary beam of charged particles, an objective lens (6) for focusing said condensed primary beam, a sectorized detector (7) for detecting a secondary charged particles. Also, several different operation modes of the beam apparatus are described allowing for serial imaging as well as parallel imaging.
Abstract:
In a scan atom probe (100), firstly, a surface shape analysis block (20) analyzes a surface shape of a sample (3). Next, an extraction electrode (5) is positioned on a desired analysis region of the sample surface. When analyzing an electron state in the analysis region, minus bias voltage is applied from a DC high voltage power source (2) to the sample (3) and field−emitted electrons are detected by a screen (9). When analyzing an atom arrangement and composition in the analysis region, the sample (3) is subjected to positive voltage from the DC high voltage power source (2) and a pulse generator (1) and cations generated by field evaporation are detected by a position detection type ion detector (11) or a reflectron type mass analyzer (13).
Abstract:
The invention relates to an emission electron microscope, comprising an objective lens, an imaging system with at least one lens and a stigmator. The invention is characterised in that said microscope comprises a second, independent imaging system (K2), parallel to the first imaging system (K1) and two electron detector devices (25) and (27), by means of which two independent images are recorded: a real image and an image of the angle distribution of the electrons as a result of electronically switching the potentials of the deflector elements (13) and (17). Both identical deflector elements comprise pairs of spherical and concentric electrodes and are electron-optically separated from each other (13a), (13b) and (17a), (17b) by double the focal length thereof and turn the electron beam through an angle corresponding to ( beta ) and (- beta ), which leads to a parallel shift of the electron beam. The electrode (13b) contains a passage (13c), which allows the electron drift along the electron-optical main axis (29a), whilst the deflection is switched off. Said emission electron microscope also comprises an electron source (8), arranged close to the electron-optical axis (29) of the objective lens, which emits primary electrons along the electron-optical axis (28) at an angle ( alpha ) to the electron-optical axis (29) of the objective lens, a contrast diaphragm system (4a) in a plane correlated to the focal plane of the objective and an image diaphragm system (11), in one of the image planes of the system.
Abstract:
An apparatus and method for inspecting a surface of a sample (S), particularly but not limited to a semiconductor device, using an electron beam presented. The technique is called Secondary Electron Emission Microscopy (SEEM), and has significant advantages over both Scanning Electron Microscopy (SEM) and Low Energy Electron Microscopy (LEEM) techniques. In particular, the SEEM technique utilizes a beam of relatively high-energy primary electrons (11) having a beam width approximate for parallel, multi-pixel imaging. The electron energy is near a charge-stable condition to achieve faster imaging than was previously attainable with SEM, and charge neutrality unattainable with LEEM.
Abstract:
An atom probe with an ion detector (7) capable of giving direct electrical indication of the position of incidence of ions field-evaporated from a specimen (1). Position information is obtained serially for successive ions and correlatd with time of flight signals related to the same ions. In this way data is made available for subsequent computer-assisted three-dimensional reconstruction of the atomic-scale chemistry of the specimen.
Abstract:
A multi-column scanning electron microscopy (SEM) system is disclosed. The SEM system includes a source assembly. The source assembly includes two or more electron beam sources configured to generate a plurality of electron beams. The source assembly also includes two or more sets of positioners configured to actuate the two or more electron beam sources. The SEM system also includes a column assembly. The column assembly includes a plurality of substrate arrays. The column assembly also includes two or more electron-optical columns formed by a set of column electron-optical elements bonded to the plurality of substrate arrays. The SEM system also includes a stage configured to secure a sample that at least one of emits or scatters electrons in response to the plurality of electron beams directed by the two or more electron-optical columns to the sample.