公开(公告)号：EP1638376A1

公开(公告)日：2006-03-22

申请号：EP04746119.9

申请日：2004-06-18

Applicant: NGK INSULATORS, LTD. ,  HONDA MOTOR CO., Ltd.

Inventor： MIKI, M., Kabushiki Kaisha Honda Gijutsu Kenkyusho ,  DOSAKA, K., Kabushiki Kaisha Honda Gijutsu ,  MIYAIRI, Y., c/o NGK Insulators, Ltd. ,  FUJIOKA, Y., NGK Insulators, Ltd. ,  MASUDA, M., NGK Insulators, Ltd. ,  SAKUMA, T., NGK Insulators, Ltd. ,  HATANO, T., NGK Insulators, Ltd.

IPC: H05H1/24 ,  B01J19/08 ,  F01N3/08

CPC classification number: F01N3/0892 ,  F01N13/009 ,  F01N2240/28 ,  H01J37/3244 ,  H01J37/32844 ,  H05H1/2406 ,  H05H2001/2418 ,  H05H2245/121 ,  Y02C20/30

Abstract: A plasma generating electrode of the invention present includes at least a pair of electrodes 5, at least one electrode 5a of the pair of electrodes 5 including a plate-like ceramic body 2 as a dielectric and a conductive film 3 disposed inside the ceramic plate 2 and having a plurality of through-holes 4 formed through the conductive film 3 in its thickness direction, the through-holes having a cross-sectional shape including an arc shape along a plane perpendicular to the thickness direction. The plasma generating electrode can generate uniform and stable plasma at low power consumption.

Abstract translation: 本发明的等离子体发生电极包括至少一对电极5，一对电极5中的至少一个电极5a包括作为电介质的板状陶瓷体2和设置在陶瓷板2内的导电膜3 并且在其厚度方向上具有穿过导电膜3形成的多个通孔4，所述通孔具有包括垂直于厚度方向的平面的弧形的横截面形状。 等离子体产生电极可以在低功耗下产生均匀和稳定的等离子体。

公开(公告)号：EP1625605A2

公开(公告)日：2006-02-15

申请号：EP04752976.3

申请日：2004-05-21

Applicant: Axcelis Technologies, Inc.

Inventor： BECKNELL, Alan ,  BUCKLEY, Thomas ,  FERRIS, David ,  PINGREE, Richard, Jr. ,  SAKTHIVEL, Palanikumaran ,  SRIVASTAVA, Aseem ,  WALDFRIED, Carlo

IPC: H01J37/32

CPC classification number: H01J37/32357 ,  H01J37/3244 ,  H01J37/32844 ,  Y02C20/30

Abstract: A plasma apparatus, various components of the plasma apparatus, and an oxygen free and nitrogen free processes for effectively removing photoresist material and post etch residues from a substrate with a carbon and/or hydrogen containing low k dielectric layer(s).

公开(公告)号：EP1171644A1

公开(公告)日：2002-01-16

申请号：EP00921335.6

申请日：2000-02-18

Applicant: MKS INSTRUMENTS, INC.

Inventor： DOZORETZ, Paul ,  GU, Youfan

IPC: C23C16/00

CPC classification number: H01J37/32844 ,  B01D5/0036 ,  C23C16/4412 ,  Y02C20/30 ,  Y10S438/905

Abstract: A TEOS trap for controlling TEOS polymerization from reaction furnace effluent in a vacuum pump line a SiO2 CVD process includes a molecular species-selective flow impeding medium that adsorbs and retains TEOS and water molecules from the effluent long enough to consume substantially all the water molecules in TEOS hydrolysis reactions while allowing non-hydrolyzed teos, ethylene, and other gaseous byproducts to pass through the trap and retaining solid and liquid phase SiO2-rich TEOS polymers formed by the hydrolysis reactions in the trap for subsequent removal and disposal. The molecular species-selective flow impeding medium has a plurality of absorption surfaces to make a surface density that performs the TEOS and water flow impeding function and solid and liquid phase TEOS polymer trapping function.

Abstract translation: 一种用于在真空泵管线中控制来自反应炉流出物的TEOS聚合的TEOS捕集器，SiO 2 CVD工艺包括分子种类选择性流动阻碍介质，其从流出物中吸附并保留TEOS和水分子足够长的时间以基本上消耗所有水分子 TEOS水解反应，同时允许未水解的乙烯，乙烯和其他气态副产物通过捕集器并保留通过捕集器中的水解反应形成的固相和液相富含SiO 2的TEOS聚合物用于随后的去除和处理。 分子种类选择性流动阻碍介质具有多个吸收表面以形成表面密度，该表面密度执行TEOS和水流阻碍功能以及固相和液相TEOS聚合物俘获功能。

公开(公告)号：EP0781599A3

公开(公告)日：1997-10-29

申请号：EP96309542.7

申请日：1996-12-24

Applicant: APPLIED MATERIALS, INC.

Inventor： Cheung, David ,  Raoux, Sebastien ,  Huang, Judy H. ,  Taylor, William N., Jr. ,  Fodor, Mark ,  Fairbairn, Kevin

IPC: B01J19/08 ,  B01J19/12 ,  B01D53/70 ,  B01D53/32

CPC classification number: H01J37/32844 ,  B01D45/06 ,  B01D53/32 ,  B01D53/46 ,  B01D2257/206 ,  B01D2259/818 ,  B01J19/08 ,  B01J19/088 ,  B01J19/126 ,  B01J19/249 ,  B01J2219/2453 ,  B01J2219/2458 ,  B01J2219/2461 ,  B01J2219/2467 ,  B01J2219/247 ,  B01J2219/2474 ,  B01J2219/2475 ,  B01J2219/2487 ,  B01J2219/2493 ,  B01J2219/2496 ,  C23C16/4405 ,  C23C16/4412 ,  H01J37/3244 ,  H01J2237/022 ,  H05H1/46 ,  H05H2001/4622 ,  H05H2001/4667 ,  H05H2245/1215 ,  Y02C20/30 ,  Y02P70/605

Abstract: An apparatus for converting PFC gases exhausted from semiconductor processing equipment to less harmful, non-PFC gases. One embodiment of the apparatus includes a silicon filter and a plasma generation system. The plasma generation system forms a plasma from the effluent PFC gases. Constituents from the plasma react with silicon and/or oxygen in the filter and convert the effluent PFC gases to less harmful, non-PFC gaseous products and byproducts. Another embodiment includes a plasma generation system and a particle trapping and collection system. The particle trapping and collection system traps silicon containing residue from deposition processes that produces such residue, and the plasma generation system forms a plasma from the effluent PFC gases. Constituents from the plasma react with the collected residue to convert the effluent PFC gases to less harmful, non-PFC gaseous products and byproducts.

公开(公告)号：EP2581925A2

公开(公告)日：2013-04-17

申请号：EP12174383.5

申请日：2012-06-29

Applicant: Korea Institute of Machinery & Materials

Inventor： Hur, Min ,  Kang, Woo Seok ,  Lee, Jae Ok ,  Lee, Dae-Woon ,  Kim, Kwan-Tea ,  Song, Young Hoon

IPC: H01J37/32

CPC classification number: H01J37/32844 ,  B01D53/32 ,  B01D53/70 ,  B01D2257/2047 ,  B01D2257/2066 ,  B01D2258/0216 ,  B01D2259/818 ,  C23C16/4412 ,  H01J37/32348 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32834 ,  H05H1/2406 ,  H05H2001/2462 ,  H05H2245/1215 ,  Y02C20/30 ,  Y02P70/605

Abstract: Provided is a plasma reactor for removal of contaminants, which is installed between a process chamber and a vacuum pump and removes contaminants emitted from a process chamber. The plasma reactor includes: at least one dielectric body that forms a plasma generation space therein; a ground electrode connected to at least one end of the dielectric body; and at least one driving electrode fixed to an outer peripheral surface of the dielectric body, and connected to an AC power supply unit to receive an AC driving voltage. The ground electrode has a non-uniform diameter along the lengthwise direction of the plasma reactor.

Abstract translation: 提供了一种用于去除污染物的等离子体反应器，其被安装在处理室和真空泵之间并去除从处理室发射的污染物。 等离子体反应器包括：在其中形成等离子体产生空间的至少一个绝缘体; 连接到所述电介质体的至少一端的接地电极; 以及至少一个驱动电极，其固定到所述电介质体的外周面，并且连接到AC电源单元以接收AC驱动电压。 接地电极沿着等离子体反应器的长度方向具有不均匀的直径。

公开(公告)号：EP2312612A2

公开(公告)日：2011-04-20

申请号：EP10013598.7

申请日：2010-10-13

Applicant: Korea Institute Of Machinery & Materials

Inventor： Hur, Min ,  Cha, Min-Suk ,  Song, Young-Hoon ,  Lee, Jae-Ok ,  Lee, Dae-Hoon ,  Kim, Kwan-Tae

IPC: H01J37/32

CPC classification number: H01J37/3255 ,  B01D53/32 ,  B01D53/323 ,  B01D2257/20 ,  B01D2257/2066 ,  B01D2257/40 ,  B01D2257/708 ,  B01D2258/0216 ,  B01D2259/818 ,  H01J37/32091 ,  H01J37/32348 ,  H01J37/32541 ,  H01J37/32834 ,  H01J37/32844 ,  H05H1/2406 ,  H05H2001/2456 ,  H05H2001/2462 ,  H05H2245/121 ,  H05H2245/1215 ,  Y02C20/30 ,  Y02P70/605

Abstract: The present invention provides a plasma reactor for abating hazardous materials generated in a low-pressure process during a process of manufacturing a display or a semiconductor. A plasma reactor for abating hazardous materials according to an exemplary embodiment of the present invention includes: a first ground electrode (21) and a second ground electrode (22) disposed at a distance from each other; a dielectric (30) fixed between the first ground electrode (21) and the second ground electrode (22); and at least one driving electrode (50) disposed on an outer surface of the dielectric, being spaced apart from the first ground electrode and the second ground electrode and connected to an AC power supply unit (40) to receive a driving voltage therefrom.

Abstract translation: 本发明提供了一种用于在制造显示器或半导体的过程中减轻在低压工艺中产生的危险材料的等离子体反应器。 根据本发明的示例性实施例的用于减轻有害材料的等离子体反应器包括：彼此间隔设置的第一接地电极（21）和第二接地电极（22）; 固定在第一接地电极（21）和第二接地电极（22）之间的电介质（30）; 以及设置在电介质的外表面上的至少一个驱动电极（50），与第一接地电极和第二接地电极间隔开并连接到AC电源单元（40）以从其接收驱动电压。

公开(公告)号：EP1625605B1

公开(公告)日：2011-04-13

申请号：EP04752976.3

申请日：2004-05-21

Applicant: Axcelis Technologies, Inc.

Inventor： BECKNELL, Alan ,  BUCKLEY, Thomas ,  FERRIS, David ,  PINGREE, Richard, Jr. ,  SAKTHIVEL, Palanikumaran ,  SRIVASTAVA, Aseem ,  WALDFRIED, Carlo

IPC: H01J37/32

CPC classification number: H01J37/32357 ,  H01J37/3244 ,  H01J37/32844 ,  Y02C20/30

Abstract: A plasma apparatus, various components of the plasma apparatus, and an oxygen free and nitrogen free processes for effectively removing photoresist material and post etch residues from a substrate with a carbon and/or hydrogen containing low k dielectric layer(s).

公开(公告)号：EP1171644B1

公开(公告)日：2007-04-18

申请号：EP00921335.6

申请日：2000-02-18

Applicant: MKS INSTRUMENTS, INC.

Inventor： DOZORETZ, Paul ,  GU, Youfan

IPC: C23C16/00 ,  C23C16/44 ,  C23C16/40

CPC classification number: H01J37/32844 ,  B01D5/0036 ,  C23C16/4412 ,  Y02C20/30 ,  Y10S438/905

Abstract: A TEOS trap for controlling TEOS polymerization from reaction furnace effluent in a vacuum pump line a SiO2 CVD process includes a molecular species-selective flow impeding medium that adsorbs and retains TEOS and water molecules from the effluent long enough to consume substantially all the water molecules in TEOS hydrolysis reactions while allowing non-hydrolyzed teos, ethylene, and other gaseous byproducts to pass through the trap and retaining solid and liquid phase SiO2-rich TEOS polymers formed by the hydrolysis reactions in the trap for subsequent removal and disposal. The molecular species-selective flow impeding medium has a plurality of absorption surfaces to make a surface density that performs the TEOS and water flow impeding function and solid and liquid phase TEOS polymer trapping function.

公开(公告)号：EP1739718A1

公开(公告)日：2007-01-03

申请号：EP06002668.9

申请日：2006-02-09

Applicant: Applied Materials, Inc.

Inventor： Lee, Ke Ling ,  Kurita, Shinichi ,  Beer, Emanuel

IPC: H01J37/32 ,  H01L21/00

CPC classification number: F16K3/0227 ,  F16K51/02 ,  H01J37/32844 ,  H01J2237/166 ,  H01L21/67126 ,  Y02C20/30 ,  Y02P70/605 ,  Y10S277/919 ,  Y10S277/92 ,  Y10T137/8242

Abstract: A method and apparatus for grounding a chamber isolation valve (101) are provided. Generally, the method makes use of an electrically conductive elastomeric member or members (107a) to effectively ground a chamber isolation valve and/or isolation valve door (107) while avoiding metal-to-metal contact between moving parts in the processing system. In one embodiment, the elastomeric member is attached to and in electrical communication with the door (107) of the chamber isolation valve. The elastomeric member is brought into contact with a grounded component of the plasma processing system when the door is in the closed position. In another embodiment, the conductive elastomeric member is attached to a bracing member (109) of the isolation valve and is brought into contact with a grounded component of the plasma processing system when the bracing member is deployed to hold the isolation valve door in place during substrate processing. Other configurations are also provided.

Abstract translation: 提供一种用于使室隔离阀（101）接地的方法和装置。 通常，该方法利用导电弹性体构件（107a）来有效地将室隔离阀和/或隔离阀门（107）接地，同时避免处理系统中移动部件之间的金属与金属的接触。 在一个实施例中，弹性体构件附接到腔室隔离阀的门（107）并与腔室隔离阀的门电连通。 当门处于关闭位置时，弹性构件与等离子体处理系统的接地部件接触。 在另一个实施例中，当支撑构件展开以将隔离阀门保持在适当位置时，导电弹性构件附接到隔离阀的支撑构件（109）并且与等离子体处理系统的接地构件接触 基板加工。 还提供其他配置。

公开(公告)号：EP1171644A4

公开(公告)日：2002-08-21

申请号：EP00921335

申请日：2000-02-18

Applicant: MKS INSTR INC

Inventor： DOZORETZ PAUL ,  GU YOUFAN

IPC: B01D5/00 ,  C23C16/44 ,  H01L21/31 ,  C23C16/00 ,  C23C16/40

CPC classification number: H01J37/32844 ,  B01D5/0036 ,  C23C16/4412 ,  Y02C20/30 ,  Y10S438/905

Abstract: A TEOS trap for controlling TEOS polymerization from reaction furnace effluent in a vacuum pump line a SiO2 CVD process includes a molecular species-selective flow impeding medium that adsorbs and retains TEOS and water molecules from the effluent long enough to consume substantially all the water molecules in TEOS hydrolysis reactions while allowing non-hydrolyzed teos, ethylene, and other gaseous byproducts to pass through the trap and retaining solid and liquid phase SiO2-rich TEOS polymers formed by the hydrolysis reactions in the trap for subsequent removal and disposal. The molecular species-selective flow impeding medium has a plurality of absorption surfaces to make a surface density that performs the TEOS and water flow impeding function and solid and liquid phase TEOS polymer trapping function.

Abstract translation: 用于在真空泵管线中控制来自反应炉流出物的TEOS聚合的TEOS捕集器，SiO 2 CVD工艺包括分子物质选择性流动阻碍介质，其吸附并保留来自流出物的TEOS和水分子足够长以消耗基本上所有的水分子 TEOS水解反应，同时允许非水解的TEOS，乙烯和其他气态副产物通过捕集器并保持通过水解反应形成的固体和液相SiO 2富集的TEOS聚合物，以便随后的去除和处置。 分子种类选择性流动阻碍介质具有多个吸附表面，以形成执行TEOS和水流阻碍功能的表面密度以及固相和液相TEOS聚合物捕集功能。