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    溅射涂层设备用的靶中的阴极/接地屏蔽配置
    61.
    发明公开
    溅射涂层设备用的靶中的阴极/接地屏蔽配置 无效

    公开(公告)号：CN86107820A

    公开(公告)日：1987-11-11

    申请号：CN86107820

    申请日：1986-11-14

    Applicant: 西屋电气公司

    Inventor： 阿尔伯特·丹尼尔·格拉瑟

    IPC: C23C14/34

    CPC classification number: H01J37/34 ,  C23C14/3407 ,  H01J37/3441

    Abstract: 一种溅射涂层设备用的靶，它包括一个在其上面设置了带溅射靶物质(58)的表面的阴极(56)和一个由间隙(96)与阴极隔开的接地屏蔽(84)。间隙(96)填满了一种即使在高湿度下也能防止间隙中产生电弧的电绝缘材料(102)。安装在阴极表面的周边部分(66)上的条板(90)形成一个连续的周围凸缘(94)，它悬在间隙(96)入口和接地屏蔽的毗邻边缘(86)之上，从而防止溅射靶物质的松散屑片桥接间隙而使阴极与接地屏蔽短路。

    Sputter target for eliminating redeposition on the target sidewall
    65.
    发明公开
    Sputter target for eliminating redeposition on the target sidewall 失效
    Sputtertarget zum Vermeiden der Wiederablagerung auf dieTargetseitenwände

    公开(公告)号：EP0825276A2

    公开(公告)日：1998-02-25

    申请号：EP97114555.2

    申请日：1997-08-22

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Fu, Jianming ,  van Gogh, James

    IPC: C23C14/34 ,  H01J37/34

    CPC classification number: H01J37/3441 ,  C23C14/3407 ,  H01J37/34 ,  H01J37/3423

    Abstract: An improved sputter target (62) and shield (70) eliminate redeposition of sputtered material onto the target (62) and prevents the formation of deposits on the electrically insulative member (22) between the target (62) and enclosure wall (12). The sputter target (62) is designed to allow the plasma to sputter the entire sidewall of the target (62) while a narrow passage (69) between the target (62), backing plate (68) and shield (70) protects the insulative member (22) from line-of-sight deposition, prevents formation of a plasma within the passage (69) without causing arcing between the backing plate (68) and shield (70). The target (62) of the present invention is generally disk-shaped with a sloped or frustoconical sidewall surface (64) around the perimeter edge.

    Abstract translation: 改进的溅射靶（62）和屏蔽（70）消除溅射材料在靶（62）上的再沉积，并且防止在靶（62）和外壳壁（12）之间的电绝缘构件（22）上形成沉积物。 溅射靶（62）被设计成允许等离子体溅射靶（62）的整个侧壁，而目标（62），背板（68）和屏蔽（70）之间的窄通道（69）保护绝缘体 （22）从视线沉积的角度防止在通道（69）内形成等离子体而不引起背板（68）和屏蔽（70）之间的电弧。 本发明的目标（62）通常是盘形的，具有围绕周边边缘的倾斜或截头圆锥形侧壁表面（64）。

    Target for a physical vapor deposition system
    66.
    发明公开
    Target for a physical vapor deposition system 失效
    目标物理学（Dampfabscheidungssystem）

    公开(公告)号：EP0794554A2

    公开(公告)日：1997-09-10

    申请号：EP97301501.9

    申请日：1997-03-06

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Van Gogh, James ,  Dorleans, Fernand ,  Hagerty, Christopher ,  Lloyd, Mark ,  Tang, Howard ,  Yang, Siyaun ,  West, R. Steve

    IPC: H01J37/34

    CPC classification number: H01J37/3441 ,  C23C14/3407 ,  H01J37/3408 ,  H01J37/3423 ,  H01J37/3447

    Abstract: The disclosure relates to a target (200) for a physical deposition (PVD) system. The target (202) has a portion (234) of the target that overhangs and shadows the side wall (218) of the target thus preventing material from depositing on the edge. To further reduce contaminant generation, the target is combined with an improved dark space shield (200) having a first end (224) and a second end (226), where the second end conventionally supports a collimator (110) and the first end has an inner surface (232) that is substantially vertical.

    Abstract translation: 本公开涉及用于物理沉积（PVD）系统的靶（200）。 目标（202）具有目标的一部分（234），其突出并遮蔽目标的侧壁（218），从而防止材料沉积在边缘上。 为了进一步减少污染物产生，目标与具有第一端（224）和第二端（226）的改进的暗空间屏蔽（200）组合，其中第二端通常支撑准直器（110），并且第一端具有 基本垂直的内表面（232）。

    High vacuum magnetron sputter source
    67.
    发明公开
    High vacuum magnetron sputter source 失效
    高真空磁控溅射源

    公开(公告)号：EP0482891A3

    公开(公告)日：1992-06-17

    申请号：EP91309760.6

    申请日：1991-10-22

    Applicant: VARIAN ASSOCIATES, INC.

    Inventor： Demaray, Richard E. ,  Hoffman, Vance E.

    IPC: H01J37/34

    CPC classification number: H01J37/3441 ,  H01J37/3408 ,  H01J37/3494

    Abstract: A vacuum sputter apparatus capable of performing sputter operations at reduced operating pressure. Magnetic means (14) is supported behind the cathode (6) for producing magnetic flux lines (16) generally parallel to a first, primary surface (8) to be sputtered which is held at a high electrical potential, thus giving rise to a magnetron plasma adjacent the primary surface. The magnetic means confines the plasma to produce a closed loop erosion path on the first surface. A dark space shield (20) extends from the wall (4) of the vacuum chamber toward the first surface, but terminates a distance from the primary surface so as to expose a portion of the second surface (10). The dark space shield is recessed a sufficient distance from the first target surface to minimize the density of the fringing field lines intersecting the dark space shield. In this manner, the plasma generated adjacent the first surface is enriched both by electrons originating from a secondary plasma at the second surface and by electrons reflected back to the first surface moving along the magnetic flux lines. Sputtering action can thus take place efficiently at reduced operating pressure. Reduced operating pressure furthermore provides more uniform film deposition, while eliminating differential segregation of the sputter compound material.

    High vacuum magnetron sputter source
    68.
    发明公开
    High vacuum magnetron sputter source 失效
    Hochvakuum-Magnetronzerstäubungsquelle。

    公开(公告)号：EP0482891A2

    公开(公告)日：1992-04-29

    申请号：EP91309760.6

    申请日：1991-10-22

    Applicant: VARIAN ASSOCIATES, INC.

    Inventor： Demaray, Richard E. ,  Hoffman, Vance E.

    IPC: H01J37/34

    CPC classification number: H01J37/3441 ,  H01J37/3408 ,  H01J37/3494

    Abstract: A vacuum sputter apparatus capable of performing sputter operations at reduced operating pressure. Magnetic means (14) is supported behind the cathode (6) for producing magnetic flux lines (16) generally parallel to a first, primary surface (8) to be sputtered which is held at a high electrical potential, thus giving rise to a magnetron plasma adjacent the primary surface. The magnetic means confines the plasma to produce a closed loop erosion path on the first surface. A dark space shield (20) extends from the wall (4) of the vacuum chamber toward the first surface, but terminates a distance from the primary surface so as to expose a portion of the second surface (10). The dark space shield is recessed a sufficient distance from the first target surface to minimize the density of the fringing field lines intersecting the dark space shield. In this manner, the plasma generated adjacent the first surface is enriched both by electrons originating from a secondary plasma at the second surface and by electrons reflected back to the first surface moving along the magnetic flux lines. Sputtering action can thus take place efficiently at reduced operating pressure. Reduced operating pressure furthermore provides more uniform film deposition, while eliminating differential segregation of the sputter compound material.

    Abstract translation: 一种能够在降低的操作压力下进行溅射操作的真空溅射装置。 磁性装置（14）被支撑在阴极（6）的后面，用于产生大体平行于第一主表面（8）的磁通线（16），以便被保持在高电位，从而产生磁控管 等离子体邻近主表面。 磁性装置将等离子体限制在第一表面上产生闭环侵蚀路径。 暗空间屏蔽（20）从真空室的壁（4）朝向第一表面延伸，但是终止与主表面的距离，以暴露第二表面（10）的一部分。 暗空间屏蔽物与第一目标表面凹入足够的距离，以使与暗空间屏蔽相交的边缘场线的密度最小化。 以这种方式，与第一表面相邻产生的等离子体由来自第二表面的次级等离子体的电子以及反射回沿着磁通线移动的第一表面的电子富集。 因此，溅射作用可以在降低的操作压力下有效地发生。 降低的操作压力进一步提供更均匀的膜沉积，同时消除溅射复合材料的不均匀偏析。

    RE-DEPOSITION FREE SPUTTERING SYSTEM
    70.
    发明申请
    RE-DEPOSITION FREE SPUTTERING SYSTEM 审中-公开

    公开(公告)号：WO2018208504A1

    公开(公告)日：2018-11-15

    申请号：PCT/US2018/029341

    申请日：2018-04-25

    Applicant: APPLIED MATERIALS, INC.

    Inventor： HOSOKAWA, Aki

    IPC: C23C14/34 ,  C23C14/35 ,  H01J37/34

    CPC classification number: C23C14/35 ,  H01J37/32779 ,  H01J37/3405 ,  H01J37/342 ,  H01J37/3423 ,  H01J37/3441

    Abstract: A cylindrical target assembly for use in a physical vapor deposition (PVD) processing chamber for magnetically enhanced sputtering applications. In embodiments disclosed herein, a cylindrical target, disposed around a rotatable backing tube, has one or more contoured ends that conform to a magnetic sputtering line located outside of a uniform magnetic field. The contoured ends prevent or substantially reduce the accumulation of redeposition material at either end of the cylindrical target assembly desirably reducing particle contamination in the process chamber and on the surfaces of substrates processed therein.

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