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公开(公告)号：KR1020100021393A
公开(公告)日：2010-02-24
申请号：KR1020090107252
申请日：2009-11-07
Applicant: 삼성전자주식회사
Abstract: PURPOSE: A tilt type mobile phone sliding module is provided to perform tilt motion at each step and variously determine tilt slope angle based on user's convenience. CONSTITUTION: A frame(30) generates planar sliding operation and tilt operation of a mobile phone. A slider(10) performs planar sliding operation through guide by the frame. An elastic device(80) is connected to the frame and slider and generates planar sliding movement in a semi-automatic way. A tilt rotating part(38) generates rotation operation of the frame.
Abstract translation: 目的：提供倾斜式手机滑动模块，用于在每个步骤执行倾斜运动，并根据用户的便利不同地确定倾斜角度。 构成：框架（30）产生移动电话的平面滑动操作和倾斜操作。 滑块（10）通过框架的引导进行平面滑动操作。 弹性装置（80）连接到框架和滑块，并以半自动方式产生平面滑动运动。 倾斜旋转部件（38）产生框架的旋转操作。
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公开(公告)号：KR1020100021391A
公开(公告)日：2010-02-24
申请号：KR1020090101489
申请日：2009-10-24
Applicant: 주식회사 제이알테크 , 삼성전자주식회사
Abstract: PURPOSE: A tilt type mobile phone sliding module is provided to ensure optimal convenience according to user's purpose. CONSTITUTION: A control bracket(40) guides stable tilt operation of a tilt rotating part(38). A spring ball(70) generates stop motion of each step during rotation of tilt rotating part and stable tilt state. A plural spring ball holding holes(46a,46b) is formed at the side of the control bracker for generating separation by insertion motion and outer force. A stopper shaft(60) restricts maximum tilt rotation angle of the tilt rotating part.
Abstract translation: 目的：提供倾斜式手机滑动模块，以确保根据用户目的的最佳方便。 构成：控制支架（40）引导倾斜旋转部件（38）的稳定倾斜操作。 弹簧球（70）在倾斜旋转部分旋转期间产生每个步骤的停止运动和稳定的倾斜状态。 多个弹簧保持孔（46a，46b）形成在控制旋转器的侧面，用于通过插入运动和外力产生分离。 止动轴（60）限制倾斜旋转部件的最大倾斜旋转角度。
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公开(公告)号：KR1020080054951A
公开(公告)日：2008-06-19
申请号：KR1020060127696
申请日：2006-12-14
Applicant: 삼성전자주식회사
IPC: H01Q1/24
Abstract: An antenna microstrip line for a portable terminal is provided to prevent loss or distortion of signals passing through signal lines by protecting the signal lines from external noise through shield lines. An antenna microstrip line(100) for a portable terminal includes first films(101) and a second film(102). The first films have shield lines(111) in a longitudinal direction. The second film is arranged between the first films and has at least one pair of signal lines(121) in a longitudinal direction. The antenna microstrip line is a flexible printed circuit board in which the first and second films are stacked in a state that the signal lines are shielded by the shield lines.
Abstract translation: 提供用于便携式终端的天线微带线，以通过屏蔽线路来保护信号线免受外部噪声的影响，以防止通过信号线的信号的损失或失真。 用于便携式终端的天线微带线（100）包括第一薄膜（101）和第二薄膜（102）。 第一膜在纵向具有屏蔽线（111）。 第二膜布置在第一膜之间并且在纵向上具有至少一对信号线（121）。 天线微带线是柔性印刷电路板，其中第一和第二膜以信号线被屏蔽线屏蔽的状态堆叠。
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公开(公告)号：KR100827437B1
公开(公告)日：2008-05-06
申请号：KR1020060045712
申请日：2006-05-22
Applicant: 삼성전자주식회사
IPC: H01L27/108
CPC classification number: H01L27/0629 , H01L28/60
Abstract: MIM 커패시터를 포함하는 반도체 집적 회로 장치가 제공된다. 반도체 집적 회로 장치는 기판, 기판 상의 층간 절연막 및 층간 절연막 내에 형성된 개구부를 매립하며 하부 금속 전극, 유전막 및 상부 금속 전극으로 이루어진 MIM 커패시터로, 층간 절연막에 의해 노출되는 MIM 커패시터의 상면은 유전막과 상부 금속 전극으로만 구성되는 MIM 커패시터를 포함한다.
MIM 커패시터, 커패시턴스 전압 계수, 유전율-
公开(公告)号：KR100781543B1
公开(公告)日：2007-12-03
申请号：KR1020060070341
申请日：2006-07-26
Applicant: 삼성전자주식회사
IPC: H01L21/205
CPC classification number: H01L21/3162 , C23C16/45531 , C23C16/4554 , C23C16/515 , C23C16/52 , H01L21/02178 , H01L21/02181 , H01L21/02205 , H01L21/02274 , H01L21/0228 , H01L21/3141 , H01L21/31637 , H01L21/31641 , H01L21/31645
Abstract: A method for forming a metal oxide layer using an atomic layer deposition is provided to easily control plasma power by reducing reflected power and uniformly generating the reflected power. First metal source gas excluding the amino group and the alkoxyl group is supplied in a chemical reactor where a substrate is formed(S120). Second metal source gas containing the amino group or the alkoxyl group is supplied in the chemical reactor(S130). Plasma of reactive gas including oxygen is formed in the chemical reactor to reduce or make uniform the reflected gas generated from the chemical reactor(S140). The metal element of the second metal source gas is excluded in a metal oxide layer. The first metal source gas is TMA(Tri Methyl Aluminum), DMAH(DiMethyl Aluminum Hydride), DMAH-EPP(DiMethyl Aluminum Hydride-Ethyl PiPeridine), and DMAP(DiMethyl Aluminum Peridine). The second metal source gas is TEMAH(Tetrakis EthylMethyAmino Hafnium), TDEAH(Tetrakis DiEthylAmino Hafnium), TDMAH(Tetrakis DiMethylAmino Hafnium), TEMAZ(Tetrakis EthylMethylAmino Zirconium), TDEAZ(Tetrakis DiRthylAmino Zirconium), TDMAZ(Tetrakis DiMethylAmino Zirconium), TDMAT(Tetrakis DiMethylAmino Titanium), TDEAT(Tetrakis DiEthylAmino Titanium), TEMAT(Tetrakis EthylMethylAmino Titanium), PEMAT(Pentakis EthylAmino Tantalum), PDMAT(Petakis DiMethylAmino Tantalum), PDEAT(Pentakis DiEthylAmino Tantalum), and TBTDET(Tert-Butylimido-Tris-Dithylamino tantalum).
Abstract translation: 提供了使用原子层沉积形成金属氧化物层的方法，以通过降低反射功率并均匀地产生反射功率来容易地控制等离子体功率。 除了氨基和烷氧基以外的第一金属源气体被供给到形成基板的化学反应器中（S120）。 含有氨基或烷氧基的第二金属源气体在化学反应器中供给（S130）。 在化学反应器中形成包括氧的反应气体的等离子体，以减少或使化学反应器产生的反射气体均匀（S140）。 在金属氧化物层中排除第二金属源气体的金属元素。 第一金属源气体是TMA（三甲基铝），DMAH（二甲基铝氢化物），DMAH-EPP（DiMethyl Aluminum Hydride-Ethyl PiPeridine）和DMAP（DiMethyl Aluminum Peridine）。 第二金属源气体是TEMAH（四乙基甲基铪铪），TDEAH（四烷基二铪铪），TDMAH（四烷基二甲基铪），TEMAZ（四乙基乙基氨基锆），TDEAZ（四烷基二氨基锆），TDMAZ（四烷基二甲基氨基锆），TDMAT 四甲基二氨基钛），TDEAT（四乙基氨基钛），TEMAT（四乙基甲基氨基钛），PEMAT（Pentakis乙基氨基钽），PDMAT（Petakis DiMethylAmino钽），PDEAT（Pentakis DiEethylAmino钽）和TBTDET（T-Butylimido-Tris-Dithylamino 钽）。
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Patent Agency Ranking
公开(公告)号：KR1020070060290A
公开(公告)日：2007-06-13
申请号：KR1020050119542
申请日：2005-12-08
Applicant: 삼성전자주식회사
IPC: G02F1/136
CPC classification number: G02F1/136 , G02F2001/13625 , H01L21/0337 , H01L21/306
Abstract: A method for manufacturing a display substrate, and a method for manufacturing an LCD(Liquid Crystal Display) by using the same are provided to form a photoresist layer pattern having a uniform thickness along an inclined portion of an etched layer pattern by applying reflow to the photoresist layer pattern when the photoresist pattern is formed on the etched layer pattern having an inclined edge portion. A first etched-layer pattern(2) having an inclined edge portion is formed on a substrate(1). A second etched layer covering the first etched layer pattern is formed. A first photoresist layer pattern(4) is formed on the second etched layer, and has a first thickness(t1) in a first region including a portion where the first etched-layer pattern is formed, and a second thickness(t2) in a second region spaced apart form the first region. The first photoresist layer pattern is inclined uniformly along the edge portion of the first etched-layer pattern. The second etched layer is patterned to form a second etched-layer pattern(3).
Abstract translation: 提供一种制造显示基板的方法，以及通过使用该方法制造LCD（液晶显示器）的方法，以通过将回流焊接到该蚀刻层图案的倾斜部分上形成具有均匀厚度的光致抗蚀剂层图案 当在具有倾斜边缘部分的蚀刻层图案上形成光致抗蚀剂图案时的光致抗蚀剂层图案。 在基板（1）上形成具有倾斜边缘部分的第一蚀刻层图案（2）。 形成覆盖第一蚀刻层图案的第二蚀刻层。 在第二蚀刻层上形成第一光致抗蚀剂层图案（4），并且在包括形成有第一蚀刻层图案的部分的第一区域中具有第一厚度（t1）和第二厚度 第二区域形成第一区域。 第一光致抗蚀剂层图案沿着第一蚀刻层图案的边缘部分均匀地倾斜。 图案化第二蚀刻层以形成第二蚀刻层图案（3）。
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公开(公告)号：KR1020060025964A
公开(公告)日：2006-03-22
申请号：KR1020040074869
申请日：2004-09-18
Applicant: 삼성전자주식회사
IPC: H04B1/40
CPC classification number: H04M1/60 , H04M2201/34 , H04M2201/36 , H04R3/04
Abstract: 본 발명은 이동 단말 장치에 있어서, 음성 또는 음향 신호를 출력하는 스피커부와, 음향 컨텐츠 데이터를 저장하는 메모리부와, 안테나를 통해 수신되는 음성 신호 또는 상기 메모리부에 저장된 음향 데이터를 변조하여 출력하는 제어부와, 상기 제어부로부터 출력되는 음성 또는 음향 신호의 왜곡을 미리 보정하여 상기 스피커부로 출력하는 음질 보정부로 구성됨을 특징으로 한다.
음향 보정, 왜곡, 등화-
公开(公告)号：KR100251644B1
公开(公告)日：2000-04-15
申请号：KR1019970009294
申请日：1997-03-19
Applicant: 삼성전자주식회사
IPC: H01L21/66
Abstract: PURPOSE: A method for analyzing a defect formed on the bare wafer for semiconductor is provided to prevent an operating error from occurring in the succeeding process by performing the manufacturing process of the semiconductor in the bare wafer that is selected on the basis of the specification made by considering D-effect, the number of crystal originated particles(COP) and the break down voltage of an oxide film. CONSTITUTION: A bare wafer cut in the specific part of a silicon ingot is selected. The distribution of D-defects in the bare wafer is obtained. The distribution of COP is obtained. After an oxide film is formed on the bare wafer, the break down voltage of the oxide film is obtained. The relation of the distributions of the D-defects and the COP and the break down voltage of the oxide film is obtained.
Abstract translation: 目的：提供一种用于分析在半导体裸晶片上形成的缺陷的方法，以通过执行基于规格所选择的裸晶片中的半导体的制造工艺来防止在后续处理中发生操作错误 通过考虑D效应，晶体起始粒子（COP）的数量和氧化膜的分解电压。 规定：选择在硅锭的特定部分切割的裸晶片。 获得裸晶片中D缺陷的分布。 获得COP的分布。 在裸晶片上形成氧化膜之后，获得氧化膜的击穿电压。 获得D缺陷和COP的分布与氧化膜的击穿电压的关系。
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公开(公告)号：KR1019990070082A
公开(公告)日：1999-09-06
申请号：KR1019980004729
申请日：1998-02-17
Applicant: 삼성전자주식회사
IPC: H01L21/66
Abstract: 본 발명은 COP 및 반도체 디바이스 일드 사이의 상관관계 시뮬레이팅 방법에 관한 것으로, 본 발명에서는 일정한 연산식을 통해 COP 및 디바이스 일드 사이의 상관관계를 연산한 후 이를 이용하여 COP 및 디바이스 일드 사이의 상관관계가 시뮬레이팅 되도록 함으로써, 작업자가 복잡한 실험과정을 거치지 않고도 디바이스의 일드를 미리 예측하여, COP의 수를 적절히 억제시킬 수 있도록 한다.
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