-
公开(公告)号：KR1020140023112A
公开(公告)日：2014-02-26
申请号：KR1020120089892
申请日：2012-08-17
Applicant: 삼성전자주식회사
CPC classification number: H01L23/552 , H01L23/3128 , H01L24/73 , H01L2224/32145 , H01L2224/32225 , H01L2224/48145 , H01L2224/48227 , H01L2224/73265 , H01L2225/06506 , H01L2225/0651 , H01L2225/06537 , H01L2225/06568 , H01L2924/15311 , H01L2924/1815 , H01L2924/3025 , H01L2924/00012 , H01L2924/00
Abstract: An electronic device includes a main board including a first ground pad, a semiconductor package electrically connected to the main board and separated from the main board, an upper conductive electromagnetism shielding member covering the upper and the lateral surface of the semiconductor package, and a lower conductive electromagnetism shielding member surrounding a separation space between the main board and the semiconductor package and electrically connected to the upper conductive electromagnetism shielding member and the first ground pad. The upper and the lower conductive electromagnetism shielding member can prevent an electromagnetic wave emitted from the semiconductor package.
Abstract translation: 电子设备包括：主板，包括第一接地焊盘，与主板电连接并与主板分离的半导体封装，覆盖半导体封装的上表面和侧表面的上导电电磁屏蔽构件，以及下部 导电电磁屏蔽构件包围主板和半导体封装之间的分隔空间，并电连接到上导电电磁屏蔽构件和第一接地垫。 上下导电电磁屏蔽构件可以防止从半导体封装发射的电磁波。
-
公开(公告)号：KR1020130099645A
公开(公告)日：2013-09-06
申请号：KR1020120021312
申请日：2012-02-29
Applicant: 삼성전자주식회사
IPC: H03H9/205
CPC classification number: H03H9/542 , H03H7/38 , H03H9/0095 , H03H9/205 , H03H9/58 , H03H9/60 , H03H9/605
Abstract: PURPOSE: A filter using bulk acoustic wave resonator (BAWR) reduces noise. CONSTITUTION: A filter using BAWR combines the respective set of BAWR and comprises at least one lattice structure circuit (510). The lattice structure circuit is configured of a first BAWR set, a second BAWR set, a third BAWR set, and a fourth BAWR set. The first BAWR set and a second BAWR set are comprised in series. The third BAWR set has one end connected to the input end of the first BAWR set, and the other end connected to the output end of the second BAWR set. The fourth BAWR set has one end connected to the output end of the first BAWR set, and the other end connected to the input end of the second BAWR set. [Reference numerals] (AA,BB,CC,DD) BAWR set
Abstract translation: 目的：使用体声波谐振器（BAWR）的滤波器可以降低噪声。 构成：使用BAWR的滤波器组合相应的BAWR组，并且包括至少一个晶格结构电路（510）。 晶格结构电路由第一BAWR组，第二BAWR组，第三BAWR组和第四BAWR组构成。 第一个BAWR集合和第二个BAWR集合包含在一起。 第三个BAWR组的一端连接到第一个BAWR组的输入端，另一端连接到第二个BAWR组的输出端。 第四个BAWR组的一端连接到第一个BAWR组的输出端，另一端连接到第二个BAWR组的输入端。 （附图标记）（AA，BB，CC，DD）BAWR组
-
公开(公告)号：KR1020130061399A
公开(公告)日：2013-06-11
申请号：KR1020110127686
申请日：2011-12-01
Applicant: 삼성전자주식회사
IPC: H03H9/17
CPC classification number: H03H9/173 , H03H3/02 , H03H9/02118 , H03H2003/021 , Y10T29/42
Abstract: PURPOSE: A bulk acoustic resonator is provided to increase coupling coefficient by reducing loss due to acoustic wave in the horizontal direction. CONSTITUTION: A bulk acoustic resonator includes a bulk acoustic resonance unit(110), air edges(120,130) and an air gap(140). The bulk acoustic resonance unit includes a piezoelectric layer(113) located in a first electrode(115) and a second electrode(111) or between the first electrode and second electrode. The air edge is formed in a location. The air gap is located in a lower part of the bulk acoustic resonance unit and an upper part of a substrate, reflects acoustic wave in the vertical direction generated from the bulk acoustic resonance unit.
Abstract translation: 目的：提供一种体声波谐振器，通过减少由于水波方向的声波引起的损耗来提高耦合系数。 构成：体声波谐振器包括体声共振单元（110），空气边缘（120,130）和气隙（140）。 体声共振单元包括位于第一电极（115）和第二电极（111）中或位于第一电极和第二电极之间的压电层（113）。 空气边缘形成在一个位置。 气隙位于体声共振单元的下部和基板的上部，反射从体声共振单元产生的垂直方向的声波。
-
公开(公告)号：KR1020130044905A
公开(公告)日：2013-05-03
申请号：KR1020110109254
申请日：2011-10-25
Applicant: 삼성전자주식회사
CPC classification number: H03H9/173 , H01L41/297 , H01L41/312 , H01L41/332 , H03H3/02 , H03H9/175 , H03H2003/021
Abstract: PURPOSE: A thin film bulk acoustic resonator and a manufacturing method thereof are provided to resolve the crystal property degradation problem of a piezoelectric layer caused by the existing inclined structure. CONSTITUTION: An acoustic resonator(110) includes a first electrode(111), a second electrode, and a piezoelectric layer(113). The piezoelectric layer is located between the first electrode and the second electrode and generates acoustic waves according to the signal applied between the electrodes. An air gap(120) is located in the lower part of the acoustic resonator and reflects the acoustic waves. Anchors(131,133) are located in both sides of the air gap and is formed by the same process. Valleys(141,143) have the air gap; and a gap smaller than the air gap in the boundary surface. An engraving checking layer(160) is located in the upper side of a substrate and interrupts the etching of the substrate when generating the air gap. A membrane(170) is located in the upper part of the air gap, the anchor, and the upper part of the valley.
Abstract translation: 目的：提供一种薄膜体声波谐振器及其制造方法，以解决由现有的倾斜结构引起的压电层的晶体性质退化问题。 构成：声谐振器（110）包括第一电极（111），第二电极和压电层（113）。 压电层位于第一电极和第二电极之间，并根据施加在电极之间的信号产生声波。 气隙（120）位于声谐振器的下部并反射声波。 锚杆（131,133）位于气隙的两侧，由相同的过程形成。 山谷（141,143）有气隙; 以及比边界面中的气隙小的间隙。 雕刻检查层（160）位于基板的上侧，并且在产生气隙时中断基板的蚀刻。 膜（170）位于气隙的上部，锚固体和谷的上部。
-
公开(公告)号：KR1020130013156A
公开(公告)日：2013-02-06
申请号：KR1020110074616
申请日：2011-07-27
Applicant: 삼성전자주식회사
Abstract: PURPOSE: A bulk acoustic wave resonator having a low temperature coefficient frequency value and a duplexer using the bulk acoustic wave resonator are provided to add a compensation layer compensating a temperature coefficient on the top, the bottom or the top and bottom of a piezoelectric layer, thereby regulating the temperature coefficient of the bulk acoustic wave resonator. CONSTITUTION: A bulk acoustic wave resonation unit(210) includes a first electrode made of material diversifying a resonant frequency according to the temperature; a second electrode and a piezoelectric layer(213) placed between the first electrode and the second electrode. At least one compensation layer(220) is made of material compensating a resonant frequency, which changes according to the temperature, to the opposite direction of the change. The compensation layer is placed on the top, the bottom or the top and bottom of the piezoelectric layer. The compensation layer compensates the temperature coefficient of the bulk acoustic wave resonation unit. [Reference numerals] (211) Upper electrode; (213) Piezoelectric layer; (215) Lower electrode; (221,223) Compensation layer
Abstract translation: 目的：提供一种具有低温度系数频率值的体声波谐振器和使用体声波谐振器的双工器，以在压电层的顶部，底部或顶部和底部添加补偿温度系数的补偿层， 从而调节体声波谐振器的温度系数。 构成：体声波谐振单元（210）包括由根据温度使谐振频率多样化的材料制成的第一电极; 放置在第一电极和第二电极之间的第二电极和压电层（213）。 至少一个补偿层（220）由补偿根据温度而变化的谐振频率与改变的相反方向的材料制成。 补偿层放置在压电层的顶部，底部或顶部和底部。 补偿层补偿体声波谐振单元的温度系数。 （211）上电极; （213）压电层; （215）下电极; （221,223）补偿层
-
Patent Agency Ranking
公开(公告)号：KR101188438B1
公开(公告)日：2012-10-08
申请号：KR1020060016308
申请日：2006-02-20
Applicant: 삼성전자주식회사
IPC: H01H59/00
CPC classification number: H01H1/0036 , H01H2057/006 , H01P1/127
Abstract: 하향형 멤스 스위치의 제조방법 및 하향형 멤스 스위치가 개시된다. 제1 및 제2공동부는 기판상에 형성되며, 제1 및 제2액츄에이터는 제1 및 제2공동부의 상부에 형성되며, 제1 및 제2고정라인은 기판의 상면에 제1 및 제2공동부와 비교차되도록 형성되며, 접속패드는 제1 및 제2고정라인의 표면으로부터 일정 거리 이격된 위치에 배치되며, 제1 및 제2액츄에이터의 구동시 제1 및 제2고정라인과 접촉가능한 형태로 형성된다. 따라서, 본 발명에 의하면, 압전력에 의해 하향하는 접속패드를 RF 신호라인과 레이어를 공유하여 제조하되 RF 신호라인 이후 제조함으로써 재구성 안테나의 성능 향상에 일조할 수 있다.
MEMS 스위치, 재구성 안테나, 멀티 밴드, 커플링-
公开(公告)号：KR1020120101965A
公开(公告)日：2012-09-17
申请号：KR1020110069193
申请日：2011-07-13
Applicant: 삼성전자주식회사
Inventor： 송인상
CPC classification number: H01L2224/16145 , H01L2224/16225 , H01L2224/32145 , H01L2224/48227 , H01L2924/15311 , H01L2924/1815 , H01L2924/19107 , H01L2924/3025
Abstract: PURPOSE: A semiconductor package and a manufacturing method thereof are provided to prevent the thickness of the semiconductor package from increasing by forming a ground member on the surface of a molding member and a side of a package substrate. CONSTITUTION: A package substrate(110) includes a ground pad(114) and a signal pad(112). A semiconductor chip(120) is electrically connected to the signal pad of the package substrate. A molding member(130) is formed on the upper side of the package substrate. A ground member(140) is electrically connected to the ground pad. An external connection terminal(150) is mounted on an internal circuit(116) exposed by the lower side of the package substrate.
Abstract translation: 目的：提供半导体封装及其制造方法，以通过在模制构件的表面和封装衬底的侧面上形成接地构件来防止半导体封装的厚度增加。 构成：封装衬底（110）包括接地焊盘（114）和信号焊盘（112）。 半导体芯片（120）电连接到封装衬底的信号焊盘。 模制构件（130）形成在封装衬底的上侧。 接地部件（140）电连接到接地焊盘。 外部连接端子（150）安装在由封装基板的下侧露出的内部电路（116）上。
-
公开(公告)号：KR1020120009602A
公开(公告)日：2012-02-02
申请号：KR1020100069571
申请日：2010-07-19
Applicant: 삼성전자주식회사
Abstract: PURPOSE: A radio frequency(RF) duplexer of a balanced structure which uses a bulk acoustic wave resonator(BAWR) and an RF filter are provided to improve the performance of the duplexer by arranging a balance reception output terminal in the duplexer. CONSTITUTION: A radio frequency(RF) duplexer which uses a bulk acoustic wave resonator(BAWR) comprises a BAWR reception filter part(110), a port conversion part(120), and a BAWR transmission filter part(130). The BAWR reception filter part comprises a plurality of BAWRs which is respectively comprised in parallel and series. An input terminal of the BAWR reception filter part is comprised of two input ports for dual input. The input terminal for the dual input is connected to a dual-output port of the port conversion part. The input terminal for the dual input receives a balanced signal. The BAWR transmission filter part is connected to a transmission port through a single-input port.
Abstract translation: 目的：提供使用体声波谐振器（BAWR）和RF滤波器的平衡结构的射频（RF）双工器，以通过在双工器中布置平衡接收输出端来提高双工器的性能。 构成：使用体声波谐振器（BAWR）的射频（RF）双工器包括BAWR接收滤波器部分（110），端口转换部分（120）和BAWR发送滤波器部分（130）。 BAWR接收滤波器部分包括多个并联和串联的BAWR。 BAWR接收滤波器部分的输入端由两个用于双输入的输入端口组成。 双输入输入端连接到端口转换部分的双输出端口。 双输入输入端接收平衡信号。 BAWR传输滤波器部分通过单输入端口连接到传输端口。
-
公开(公告)号：KR1020110138663A
公开(公告)日：2011-12-28
申请号：KR1020100058682
申请日：2010-06-21
Applicant: 삼성전자주식회사
CPC classification number: H01H59/0009 , B81B7/04 , H01H2221/06
Abstract: PURPOSE: A micro switch with a compact structure is provided to perform scale down and achieve mechanical stability and superior quality by being manufactured by a low temperature process. CONSTITUTION: A micro switch(100) comprises a pause uneven electrode(110), an operation uneven electrode(120), a driving shaft(130), a contact unit(140), and a connection terminal(150). The pause uneven electrode is extended to a first direction in the upper side of a substrate. The operation uneven electrode is corresponded to the pause uneven electrode and is arranged to be parallel to the uneven electrode at a certain interval. The driving shaft is connected with the operation uneven electrode and the first direction to a vertical direction. The contact unit is formed in the one end of the driving shaft. The connection terminal is placed in the traveling direction of the contact unit and the driving shaft and performs switching with the contact unit.
Abstract translation: 目的：提供具有紧凑结构的微动开关，通过低温工艺制造，实现缩小，实现机械稳定性和优质。 构成：微型开关（100）包括暂停不均匀电极（110），操作不均匀电极（120），驱动轴（130），接触单元（140）和连接端子（150）。 暂停不均匀电极在衬底的上侧延伸到第一方向。 操作不均匀电极对应于暂停不均匀电极，并且以一定间隔布置成平行于不均匀电极。 驱动轴与操作不均匀电极连接，第一方向与垂直方向连接。 接触单元形成在驱动轴的一端。 连接端子位于接触单元和驱动轴的行进方向上，并与接触单元进行切换。
-
公开(公告)号：KR1020110124590A
公开(公告)日：2011-11-17
申请号：KR1020100044062
申请日：2010-05-11
Applicant: 삼성전자주식회사 , 연세대학교 산학협력단
CPC classification number: H03H9/2463 , B82Y30/00 , H03H2009/02322 , B82B3/0004
Abstract: PURPOSE: A resonator which uses carbon based nano materials and a manufacturing method thereof are provided to include a silicon carbide layer and a carbon based nano material layer, thereby reducing energy loss with high rigidity compared to density. CONSTITUTION: A sacrificial layer(120) is arranged on a substrate(110). A resonance structure(130) is arranged on the sacrificial layer. The sacrificial layer supports both sides of the resonance structure of a dual fixing beam type. The resonance structure comprises a carbon based nano material layer(132) and a silicon carbide layer(131). The carbon based nano material layer includes one of materials among graphene, graphite, and CNT(Carbon Nano Tube).
Abstract translation: 目的：提供一种使用碳纳米材料的谐振器及其制造方法，其包括碳化硅层和碳基纳米材料层，从而与密度相比，具有高刚性的能量损失。 构成：牺牲层（120）布置在基底（110）上。 谐振结构（130）布置在牺牲层上。 牺牲层支撑双重固定梁类型的共振结构的两侧。 谐振结构包括碳基纳米材料层（132）和碳化硅层（131）。 碳纳米材料层包括石墨烯，石墨和CNT（碳纳米管）之一的材料之一。
-
-
-
-
-
-
-
-
-
Search Results
290
records
(took 0.032 seconds)
