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公开(公告)号：KR1020150078162A
公开(公告)日：2015-07-08
申请号：KR1020130167312
申请日：2013-12-30
Applicant: 삼성전자주식회사
IPC: H04N5/369
CPC classification number: H04N5/378 , H01L27/14609 , H01L27/14627 , H01L27/14641 , H01L27/14643 , H01L27/14665 , H04N5/37457 , H04N9/045
Abstract: 적층형이미지센서의단위픽셀은적층형광전변환부, 제1 신호발생부및 제2 신호발생부를포함한다. 적층형광전변환부는입사광의제1 내지제3 성분들에기초하여제1 내지제3 광전하들을발생하고적층되어형성되는제1 내지제3 광전변환소자들을포함한다. 제1 신호발생부는제1 광전하들및 제1 신호노드에기초하여제1 픽셀신호를발생하고, 제2 광전하들및 제1 신호노드에기초하여제2 픽셀신호를발생한다. 제2 신호발생부는제3 광전하들및 제2 신호노드에기초하여제3 픽셀신호를발생하고, 제1 신호발생부와적어도일부를공유한다.
Abstract translation: 层叠图像传感器的单位像素包括：堆叠光电转换单元; 第一信号发生单元; 和第二信号生成单元。 叠层光电转换单元包括基于入射光的第一至第三分量产生并堆叠形成为第一至第三光电荷的第一至第三光电转换元件。 第一信号生成单元基于第一光电荷产生第一像素信号和第一信号节点，并且基于第二光电荷和第一信号节点生成第二像素信号。 第二信号生成单元基于第三光电荷生成第三像素信号和第二信号节点，并且与第一信号生成单元共享至少一部分。
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公开(公告)号：KR1020140101184A
公开(公告)日：2014-08-19
申请号：KR1020130014538
申请日：2013-02-08
Applicant: 삼성전자주식회사
CPC classification number: G03B3/02 , G02B7/08 , G02B2005/1804 , G03B3/10 , H04N5/23296
Abstract: A wide viewing angle control apparatus includes an optical element part and an optical element moving part. The optical element part includes an optical element for changing a viewing angle of first light emitted from a light source. The optical element moving part moves the position of the optical element. Therefore, the present invention can control the viewing angle of the light emitted from the light source without increasing the number of light sources and also can be effectively used in electronic devices such as a camera with a zoom function and a mobile phone including the camera.
Abstract translation: 宽视角控制装置包括光学元件部分和光学元件移动部分。 光学元件部分包括用于改变从光源发射的第一光的视角的光学元件。 光学元件移动部件移动光学元件的位置。 因此，本发明可以在不增加光源数量的情况下控制从光源发出的光的视角，并且还可以有效地用于具有变焦功能的照相机等电子设备和包括该照相机的移动电话。
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公开(公告)号：KR1020140047500A
公开(公告)日：2014-04-22
申请号：KR1020130026459
申请日：2013-03-13
Applicant: 삼성전자주식회사
IPC: H04N5/374
CPC classification number: H04N5/363 , H01L27/1461 , H01L27/14612 , H01L27/14614 , H01L27/14643 , H04N5/374 , H04N5/3742 , H04N5/3745 , H04N5/378
Abstract: An image sensor chip according to an embodiment of the present invention comprises: a first wafer including an image sensor having a plurality of sub-pixels, each of which detects at least one photon and outputs a sub-pixel signal according to a result of the detection; and a second wafer including an image processor which generates image data by processing the plurality of sub-pixel signals for each sub-pixel, wherein the first wafer and the second wafer are formed in a wafer stack structure. According to the image sensor chip of the embodiment of the present invention, an image sensor and circuits included in an image processor can be fully implemented by implementing the image sensor and the image processor with the wafer stack.
Abstract translation: 根据本发明的实施例的图像传感器芯片包括：第一晶片，其包括具有多个子像素的图像传感器，每个子像素检测至少一个光子，并且根据所述多个子像素的结果输出子像素信号 检测; 以及第二晶片，其包括通过对每个子像素处理所述多个子像素信号来生成图像数据的图像处理器，其中所述第一晶片和所述第二晶片形成为晶片堆叠结构。 根据本发明的实施例的图像传感器芯片，通过利用晶片叠层实现图像传感器和图像处理器，可以完全实现包括在图像处理器中的图像传感器和电路。
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公开(公告)号：KR101370275B1
公开(公告)日：2014-03-05
申请号：KR1020070084032
申请日：2007-08-21
Applicant: 삼성전자주식회사
IPC: H01L27/115
CPC classification number: H01L27/2436 , G11C13/0004 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1616 , H01L45/1625
Abstract: 본 발명은 상변화 메모리 소자에 관한 것이다. 상변화 메모리 소자에 있어서, 하부 전극; 상기 하부 전극의 일영역 상에 형성된 하부 전극 콘택층과 상기 하부 전극 콘택층 측부에 형성된 절연층; 상기 하부 전극 콘택층 및 절연층 상에 형성된 것으로, 결정화 온도가 섭씨 100 내지 150도인 상변화 물질로 형성된 상변화층; 및 상기 상변화층 상에 형성된 상부 전극;을 포함하는 상변화 메모리 소자를 제공한다.
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公开(公告)号：KR1020120059019A
公开(公告)日：2012-06-08
申请号：KR1020100120611
申请日：2010-11-30
Applicant: 삼성전자주식회사
CPC classification number: G01J5/20 , G01J5/0225 , G01J5/024 , G01J5/046 , G11C13/0004 , H01L27/14603 , H01L27/14609 , H01L27/14669
Abstract: PURPOSE: A thermal image sensor having a chalcogenide compound composing a bolometer resistor and manufacturing method thereof are provided to enhance an infrared ray responding capacity of a thermal image sensor by utilizing a chalcogenide compound as a bolometer resistor. CONSTITUTION: A thermal image sensor comprises a first metal layer(302), a cavity, a bolometer resistor(303), and a second metal layer(304). The first metal layer is formed on a substrate. The cavity is arranged on the first metal layer, thereby resonance-absorbing infrared rays. The bolometer resistor is formed into a chalcogenide compound. The second metal layer is formed on the bolometer resistor.
Abstract translation: 目的：提供一种具有组成辐照热电阻的硫族化合物的热像传感器及其制造方法，以通过利用硫族化合物作为测辐射热电阻来增强热像传感器的红外线响应能力。 构成：热图像传感器包括第一金属层（302），腔体，测辐射热计电阻器（303）和第二金属层（304）。 第一金属层形成在基板上。 空腔布置在第一金属层上，从而共振吸收红外线。 辐照热电阻器形成硫族化合物。 第二金属层形成在测辐射热电阻上。
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Patent Agency Ranking
公开(公告)号：KR1020100009325A
公开(公告)日：2010-01-27
申请号：KR1020080070166
申请日：2008-07-18
Applicant: 삼성전자주식회사
Inventor： 이태연
IPC: H01L27/115 , H01L21/8247
CPC classification number: H01L45/00 , G11C11/56 , G11C11/5678 , G11C13/0004 , H01L45/06 , H01L45/1233 , H01L45/141
Abstract: PURPOSE: A multilevel phase change memory device is provided to save multilevel bit information using the same structure with the memory cell of an existing phase change memory device. CONSTITUTION: A memory cell(10) of a multilevel phase change memory device comprises a lower electrode(11), an upper electrode(12), a phase change material layer(13) positioned between the lower electrode and the upper electrode. The lower electrode is composed of a plug-shaped electrode formed inside the contact hole of a first interlayer dielectric layer(14). The phase change material layer is formed on the first interlayer dielectric layer. The phase change material layer is electrically connected to the lower electrode. A second interlayer dielectric layer(15) is formed on the first interlayer dielectric layer and the phase change material layer. The upper electrode is positioned inside the contact hole formed in the second interlayer dielectric layer. The upper electrode is electrically connected to the phase change material layer. The lower electrode, the phase change material layer, and the upper electrode constitute one storage node. A switching element(16) is connected to the lower electrode or the upper electrode.
Abstract translation: 目的：提供多级相变存储器件，以使用与现有相变存储器件的存储器单元相同的结构来保存多级位信息。 构成：多电平相变存储器件的存储单元（10）包括位于下电极和上电极之间的下电极（11），上电极（12），相变材料层（13）。 下电极由形成在第一层间电介质层（14）的接触孔内部的塞状电极构成。 相变材料层形成在第一层间电介质层上。 相变材料层电连接到下电极。 在第一层间介质层和相变材料层上形成第二层间介质层（15）。 上电极位于形成在第二层间电介质层中的接触孔的内部。 上电极与相变材料层电连接。 下电极，相变材料层和上电极构成一个存储节点。 开关元件（16）连接到下电极或上电极。
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公开(公告)号：KR1020090077523A
公开(公告)日：2009-07-15
申请号：KR1020080003524
申请日：2008-01-11
Applicant: 삼성전자주식회사
IPC: H01L27/115 , H01L21/8247
CPC classification number: H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/148 , H01L45/1625 , C23C16/305
Abstract: A phase change material layer and a phase change memory device comprising the same are provided to achieve low melting point and high re-crystallization temperature and obtain a reduced reset current and a favorable retention property. A phase change material layer(10) adds at least one of In or Ga into Sb. The phase change material layer is formed in a range of intermetallic composition to eutectic composition. The phase change material layer may contain at least one of Sb and In, or Ga. A phase change memory device includes a storage node having a phase change material layer and switching devices connected to the storage node.
Abstract translation: 提供相变材料层和包含该相变材料层的相变存储器件以实现低熔点和高再结晶温度，并获得降低的复位电流和良好的保留性能。 相变材料层（10）将In或Ga中的至少一种添加到Sb中。 相变材料层在金属间组合物的范围内形成为共晶组成。 相变材料层可以含有Sb和In中的至少一种，或Ga。相变存储器件包括具有相变材料层的存储节点和连接到存储节点的开关装置。
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公开(公告)号：KR100716941B1
公开(公告)日：2007-05-10
申请号：KR1019990045853
申请日：1999-10-21
Applicant: 삼성전자주식회사
IPC: G11B7/09
CPC classification number: G11B7/131 , G11B7/08505 , G11B7/0906
Abstract: 광 기록/재생 장치에 관한 것으로서 특히 레이저 스폿의 이동 방향을 판단하는 방법 및 장치에 관한 것이다.
본 발명에 따른 레이저 스폿의 이동 방향 판단 방법은 적어도 래디얼 방향으로 2분할된 광검출기에서 래디얼 방향의 수광소자들에서 발생된 수광신호들 사이의 위상차를 얻고, 얻어진 위상차들을 가산함에 의해 제1위상신호를 얻는 과정; 상기 2분할된 광검출기에서 래디얼 방향의 수광소자들에서 발생된 수광신호들 사이의 위상차를 얻고, 얻어진 위상차들을 감산함에 의해 트랙킹 에러 신호를 얻는 과정; 상기 제1위상 신호 및 상기 트랙킹 에러 신호를 이치화하는 과정; 상기 이치화된 제1위상 신호 및 상기 이치화된 트랙킹 에러 신호의 진상/지상관계에 따라 레이저 스폿의 이동 방향을 판단하는 과정을 포함하는 것을 특징으로 한다.
본 발명에 따른 레이저 스폿 이동 방향 판단 방법은 광검출기에서 래디얼 방향으로 반분된 수광소자들에서 발생된 수광신호들의 위상차를 검출하여 얻어진 제1위상신호와 트랙 에러 신호의 위상을 비교함에 의해 레이저 스폿의 이동 방향을 판단하므로 레이저 스폿의 크기에 비해 트랙 피치가 상대적으로 작은 경우에도 정확하게 이동 방향을 판단할 수 있는 효과를 가진다.-
公开(公告)号：KR1020020047861A
公开(公告)日：2002-06-22
申请号：KR1020000076490
申请日：2000-12-14
Applicant: 삼성전자주식회사
IPC: H04N5/76
Abstract: PURPOSE: A recording medium storing digital data, a method and a system for reproducing the digital data are provided to record and reproduce digital data having a data structure that is interpreted and presented by a digital TV or HDTV. CONSTITUTION: A recording medium(10) records menu data(100) and main data(400). The menu data displays at least one menu. The main data includes at least one of audio data and video data and at least one file that is reproduced when a predetermined menu is selected. A digital data reproducing system includes a data reading unit for reading menu data recorded in a markup language and a main data having at least one file linked with a selected menu and called in its file name, a markup language interpretation engine for interpreting the read menu data to display the menu data in accordance with the grammar of the markup language, and a converter for converting the menu data into a reproduced signal and converting the file into a reproduced signal.
Abstract translation: 目的：提供存储数字数据的记录介质，用于再现数字数据的方法和系统，以记录和再现具有由数字TV或HDTV解释和呈现的数据结构的数字数据。 构成：记录介质（10）记录菜单数据（100）和主数据（400）。 菜单数据至少显示一个菜单。 主要数据包括音频数据和视频数据中的至少一个以及当选择预定菜单时再现的至少一个文件。 一种数字数据再现系统，包括用于读取以标记语言记录的菜单数据的数据读取单元和具有与所选择的菜单相链接并且以其文件名称调用的至少一个文件的主数据，用于解释读取菜单的标记语言解释引擎 用于根据标记语言的语法显示菜单数据的数据，以及用于将菜单数据转换成再现信号并将文件转换成再现信号的转换器。
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公开(公告)号：KR1020010027860A
公开(公告)日：2001-04-06
申请号：KR1019990039832
申请日：1999-09-16
Applicant: 삼성전자주식회사
IPC: G11B7/09
Abstract: PURPOSE: A method for detecting a track cross signal of an optical disk recording/reproducing unit and a device thereof are provided to use a radial push-pull signal obtained by subtracting light receiving signals generated in a light collecting element divided by half in a radial direction in a light detector. CONSTITUTION: Subtraction is performed between a light receiving signal generated from a left light receiving element and a light receiving signal generated from a right light receiving element, in a radial direction of an optical detector, to obtain a radial push-pull signal(S402). The obtained radial push-pull signal is half-wave rectified or full-wave rectified(S404). The rectified radial push-pull signal becomes binary by a predetermined threshold, to obtain a track cross signal(S406).
Abstract translation: 目的：提供一种用于检测光盘记录/再现单元的轨道交叉信号的方法及其装置，以使用径向推挽信号，该径向推挽信号通过减去在径向上除以一半的聚光元件中产生的光接收信号 方向在光检测器。 构成：在光检测器的径向上，在从左光接收元件产生的光接收信号和从右光接收元件产生的光接收信号之间进行减法，以获得径向推挽信号（S402） 。 获得的径向推挽信号进行半波整流或全波整流（S404）。 经整流的径向推挽信号变为二进制预定阈值，以获得轨道交叉信号（S406）。
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