-
公开(公告)号：KR1020090008010A
公开(公告)日：2009-01-21
申请号：KR1020070071286
申请日：2007-07-16
Applicant: 삼성전자주식회사
IPC: G11B5/127
CPC classification number: G11B9/02 , G11B5/6082 , H01L29/78
Abstract: An electric field reproduction/record head and a manufacturing method thereof, and an information storage apparatus including the electric field reproduction/record head are provided to improve operation stability and recording density of reproduction/record head by applying the electric field recording method to the drive system of HDD. An electric field reproduction/record head comprises a resistance region(20) which is formed within a substrate, having an end surface facing a recording medium, a source(30a) and a drain(30b) which are formed in either side of the resistance region of the substrate, and an insulating layer(40) and a write electrode(50) which are successively provided in the resistance region. The length(‘±) and width(w) of the resistance region satisfy the following equation, (‘±/w)>=0.2 or (‘±/w)>=1.
Abstract translation: 提供电场再现/记录头及其制造方法以及包括电场再现/记录头的信息存储装置，以通过将电场记录方法应用于驱动器来提高再现/记录头的操作稳定性和记录密度 硬盘系统 电场再现/记录头包括形成在基板内的电阻区域（20），具有面向记录介质的端面，形成在电阻的两侧的源极（30a）和漏极（30b） 区域，以及连续地设置在电阻区域中的绝缘层（40）和写入电极（50）。 电阻区域的长度（'±）和宽度（w）满足下列等式，（'±/ w）= 0.2或（'±/ w）= 1。
-
公开(公告)号：KR1020080100083A
公开(公告)日：2008-11-14
申请号：KR1020070046201
申请日：2007-05-11
Applicant: 삼성전자주식회사
IPC: G11B5/02
CPC classification number: G11B9/02
Abstract: An electric field effect record/playback apparatus and a driving method thereof are provided to compensate the playback sensitivity degradation by a problem in manufacturing and achieve optimum playback sensitivity by applying a predetermined voltage is authorized in a write electrode of an electric field effect record/playback head in the reproduction operation. A driving method of an electric field effect record/playback apparatus employing electric field effect record/playback head(100) including a resistance zone(R) located between a source area(S) and a drain region(D) and a write electrode(W) located in the resistance zone includes a step for applying adjustment voltage lower than critical voltage inducing polarization in a recording medium to the write electrode, and reproducing the information recorded in the recording medium according to the polarization direction of the electric domain on the recording medium based on the change in current amount flowing through the resistance zone.
Abstract translation: 提供电场效应记录/重放装置及其驱动方法以通过制造中的问题来补偿重放灵敏度劣化，并通过在电场效应记录/重放的写入电极中施加预定电压来实现最佳重放灵敏度 在复制操作中。 一种采用电场效应记录/重放头（100）的电场效果记录/重放装置的驱动方法，包括位于源区（S）和漏区（D）之间的电阻区（R）和写电极（ W）包括将低于记录介质中的临界电压诱导极化的调节电压施加到写入电极的步骤，并且根据记录介质上的电畴极化方向再现记录在记录介质中的信息 基于流过电阻区的电流量的变化的介质。
-
公开(公告)号：KR1020080082133A
公开(公告)日：2008-09-11
申请号：KR1020070022553
申请日：2007-03-07
Applicant: 삼성전자주식회사
IPC: G11B9/02
CPC classification number: G11B9/02 , Y10T428/26 , Y10T428/31504
Abstract: A ferroelectric recording media, a method for manufacturing the same, and an information storage device using the same are provided to prevent breakdown at high voltage by forming an insulator layer between a bottom electrode layer and a ferroelectric layer. A method for manufacturing a ferroelectric recording media comprises the steps of: forming a bottom electrode layer(110) on a substrate(100); forming an insulator layer(120) on the bottom electrode layer; and forming a ferroelectric layer(130) for recording data on the insulator layer. The insulator layer of 0.5 to 50nm is made of any one of insulating materials including ZrO2, TiO2, MgO, SrTiO3, Al2O3, HfO2, NbO, SiO2, and Si3N4.
Abstract translation: 提供铁电记录介质，其制造方法和使用其的信息存储装置，以通过在底部电极层和铁电体层之间形成绝缘体层来防止高压下的击穿。 制造铁电记录介质的方法包括以下步骤：在基板（100）上形成底电极层（110）; 在所述底部电极层上形成绝缘体层（120）; 以及形成用于在绝缘体层上记录数据的铁电层（130）。 0.5至50nm的绝缘体层由包括ZrO 2，TiO 2，MgO，SrTiO 3，Al 2 O 3，HfO 2，NbO，SiO 2和Si 3 N 4的绝缘材料中的任一种制成。
-
公开(公告)号：KR100858093B1
公开(公告)日：2008-09-10
申请号：KR1020070134455
申请日：2007-12-20
Applicant: 삼성전자주식회사
IPC: H01L27/105 , G11B9/02
Abstract: 결정성 및 표면거칠기(surface roughness) 특성이 우수하면서도 고기록 밀도의 데이터 저장성능을 가지는 강유전체 박막 및 상기 강유전체 박막을 포함한 강유전체 기록매체의 제조방법이 개시된다. 본 발명에 따른 강유전체 박막의 제조방법은, 기판 상에 비정질의 TiO
2 층을 형성하는 단계, 상기 TiO
2 층 상에 PbO 가스 분위기를 형성하는 단계 및 상기 TiO
2 층과 PbO 가스를 400℃ 내지 650℃의 온도범위에서 반응시켜 상기 기판 상에 1㎚ 내지 20㎚ 크기의 미세 결정립(grain) 구조를 갖는 PbTiO
3 강유전체 박막을 형성하는 단계를 포함한다.-
公开(公告)号：KR100813517B1
公开(公告)日：2008-03-17
申请号：KR1020060105269
申请日：2006-10-27
Applicant: 삼성전자주식회사
IPC: H01L27/105
Abstract: A method for fabricating a ferroelectric recording medium is provided to improve the data storage capabilities of a recording medium by forming a ferroelectric thin film having a grain structure that is no more than 5 nm and has a uniform size. An electrode layer of a conductive material is formed on a substrate(10). An amorphous TiO2 layer(12) is formed on the electrode layer. A PbO gas atmosphere(200) is formed on the TiO2 layer. The TiO2 layer is reacted with PbO gas in a temperature range of 400-800 ‹C to form a PbTiO3 ferroelectric thin film having a fine grain structure with a size of 1-20 nm. At least one of the reaction temperature and reaction time of the TiO2 layer and the PbO gas or the flux of the PbO gas is controlled to adjust the grain size or stoichiometry of the PbTiO3 ferroelectric thin film.
Abstract translation: 提供一种用于制造铁电记录介质的方法，通过形成具有不超过5nm的晶粒结构并具有均匀尺寸的铁电薄膜来提高记录介质的数据存储能力。 在基板（10）上形成导电材料的电极层。 在电极层上形成无定形TiO 2层（12）。 在TiO 2层上形成PbO气氛（200）。 在400-800℃的温度范围内，使TiO 2层与PbO气体反应，形成具有1-20nm的细晶粒结构的PbTiO 3铁电薄膜。 控制TiO 2层和PbO气体的反应温度和反应时间中的至少一个或PbO气体的流量以调节PbTiO 3铁电薄膜的晶粒尺寸或化学计量。
-
Patent Agency Ranking
公开(公告)号：KR1020080018434A
公开(公告)日：2008-02-28
申请号：KR1020060080530
申请日：2006-08-24
Applicant: 삼성전자주식회사
IPC: G11B9/14
CPC classification number: G11B9/04 , B82Y10/00 , G11B9/1409 , G11B9/149
Abstract: A device for storing high density data and a recording/reproducing method thereof are provided to safely record/reproduce the data in a recording medium by separating the tip of a probe from the recording medium. A device for storing high density data uses a recording medium(200) and a probe(100). The recording medium is a thin film made of a phase change material or an oxide resistance variable material. A tip(140), having a channel structure of a field-effect transistor, is formed at the lower part of the probe and separated from the top of the recording medium.
Abstract translation: 提供一种用于存储高密度数据的装置及其记录/再现方法，用于通过将探针的尖端与记录介质分离来将数据安全地记录/再现在记录介质中。 用于存储高密度数据的装置使用记录介质（200）和探针（100）。 记录介质是由相变材料或氧化物电阻变化材料制成的薄膜。 具有场效应晶体管的沟道结构的尖端（140）形成在探针的下部并与记录介质的顶部分离。
-
公开(公告)号：KR100790895B1
公开(公告)日：2008-01-03
申请号：KR1020060113388
申请日：2006-11-16
Applicant: 삼성전자주식회사
IPC: H01L21/66
CPC classification number: G01Q60/30 , G01Q80/00 , H01C13/00 , Y10T29/49082
Abstract: A semiconductor probe having a resistive tip and a method for fabricating the same are provided to prevent abrasion of a resistive region by forming a plane with a dielectric layer of the resistive region, an electric field shield, and a dielectric layer. A resistive tip is doped with a first impurity. A stage of the resistive tip is doped with a second impurity of low density. The second impurity has polarity different from the polarity of the first impurity. A first and second semiconductor electrode regions are formed on an inclined surface of the resistive tip. The first and second semiconductor electrode regions are doped with the second impurity of high density. A dielectric layer(160) is formed on the resistive tip. An electric field shield(162) is formed on a dielectric layer. The electric field shield and the dielectric layer are formed as a plane on the end of the resistive tip. A cantilever(170) is positioned at an end of the resistive tip.
Abstract translation: 提供具有电阻端头的半导体探针及其制造方法，以通过形成具有电阻区域，电场屏蔽层和电介质层的介电层的平面来防止电阻区域的磨损。 电阻尖端掺杂有第一杂质。 电阻尖端的阶段掺杂有低密度的第二杂质。 第二杂质的极性与第一杂质的极性不同。 第一和第二半导体电极区域形成在电阻尖端的倾斜表面上。 第一和第二半导体电极区域掺杂有高密度的第二杂质。 在电阻尖端上形成介电层（160）。 在电介质层上形成电场屏蔽（162）。 电场屏蔽层和电介质层形成为电阻端头端的平面。 悬臂（170）位于电阻尖端的端部。
-
公开(公告)号：KR100773545B1
公开(公告)日：2007-11-06
申请号：KR1020060014696
申请日：2006-02-15
Applicant: 삼성전자주식회사
IPC: H02K41/02
CPC classification number: G11B9/1436 , G01Q10/04 , G01Q80/00
Abstract: 로킹장치를 구비한 Ｘ-Ｙ스테이지 구동장치와, 이를 채용한 정보저장기기에 관하여 개시된다. 개시된 로킹장치를 구비한 XY스테이지 구동장치는: XY스테이지; 상기 XY스테이지를 탄성 지지하며, 상기 XY 스테이지의 코너를 지지하는 탄성빔을 구비하는 지지부; 상기 XY 스테이지를 제1방향과, 상기 제1방향과 직교하는 제2방향으로 구동하는 구동부; 상기 XY스테이지의 회전을 저지하는 스티프너; 및 상기 스티프너를 정전기력으로 고정하는 로킹장치;를 구비하는 것을 특징으로 한다.
-
公开(公告)号：KR100745755B1
公开(公告)日：2007-08-02
申请号：KR1020060000886
申请日：2006-01-04
Applicant: 삼성전자주식회사
Abstract: A method for manufacturing a carbon nanotube probe tip is provided to record/reproduce information at high density and have a simple and easy manufacturing process by miniaturizing the carbon nanotube probe tip. A substrate(10) is prepared. A catalyst metal layer(12) and an aluminum oxide layer are successively formed on the substrate(10). The aluminum oxide layer is anodized to be changed to a porous aluminum oxide layer having fine holes which expose the catalyst metal layer(12). A carbon nanotube(20) is grown on the exposed catalyst metal layer(12). A photoresist is coated on the aluminum oxide layer, and the carbon nanotube(20) to be used as a probe tip is selectively masked. The dry etching of certain depth is performed from an upper surface of the aluminum oxide layer which is not coated by the photoresist to expose the substrate(10). The isotropic undercut etching of the substrate surface exposed by the dry etching is performed to form a front end part for supporting the carbon nanotube(20). The catalyst metal layer(12) exposed by the isotropic undercut etching is etched to expose a lower surface of the aluminum oxide layer which surrounds the carbon nanotube(20). The wet etching of the aluminum oxide layer is performed from a lower surface side of the aluminum oxide layer, and the aluminum oxide layer and the photoresist formed on the aluminum oxide layer are removed. The catalyst metal layer(12) is formed by at least one metal selected from a group containing Ni, an invar, Fe, Co, and Au.
Abstract translation: 提供一种用于制造碳纳米管探针尖端的方法，以通过使碳纳米管探针尖端小型化来以高密度记录/再现信息并且具有简单且容易的制造过程。 准备基板（10）。 催化剂金属层（12）和氧化铝层依次形成在基板（10）上。 氧化铝层被阳极化以变成具有暴露催化剂金属层（12）的细孔的多孔氧化铝层。 碳纳米管（20）在暴露的催化剂金属层（12）上生长。 在氧化铝层上涂覆光致抗蚀剂，并且选择性地掩蔽用作探针尖端的碳纳米管（20）。 从没有被光致抗蚀剂涂覆的氧化铝层的上表面执行特定深度的干蚀刻以暴露衬底（10）。 对通过干法蚀刻而暴露的基板表面进行各向同性底切蚀刻以形成用于支撑碳纳米管（20）的前端部分。 通过各向同性底切蚀刻而暴露的催化剂金属层（12）被蚀刻以暴露围绕碳纳米管（20）的氧化铝层的下表面。 从氧化铝层的下表面侧进行氧化铝层的湿法蚀刻，并去除氧化铝层上形成的氧化铝层和光致抗蚀剂。 催化剂金属层（12）由选自包含Ni，殷钢，Fe，Co和Au的组中的至少一种金属形成。
-
公开(公告)号：KR100723413B1
公开(公告)日：2007-05-30
申请号：KR1020050113571
申请日：2005-11-25
Applicant: 삼성전자주식회사
IPC: G11B9/14
Abstract: 데이터 기록 및 읽기용 멀티 프로브(multi-probe)와 그 동작 방법에 관해 개시되어 있다. 여기서 본 발명은 기록매체에 대한 데이터 기록 및 읽기에 사용되는 멀티 프로브에 있어서, 상기 멀티 프로브에 포함된 모든 프로브는 상기 기록매체에 데이터를 기록하고 상기 기록매체로부터 데이터를 읽을 수 있는 동작 프로브(working probe)인 것을 특징으로 하는 멀티 프로브 및 그 동작 방법을 제공한다.
Abstract translation: 公开了一种用于数据记录和读取的多探针及其操作方法。 本发明涉及一种多探针被用于数据记录和读出的记录介质上时，包含在记录介质上的多探头记录数据和所有探针操作探针（工作数据可以从记录介质中读取 探针及其操作方法。
-
-
-
-
-
-
-
-
-
Search Results
113
records
(took 0.038 seconds)
