公开(公告)号：KR101403323B1

公开(公告)日：2014-06-05

申请号：KR1020130001124

申请日：2013-01-04

Applicant: 한국과학기술원

Inventor： 장홍영 ,  배인식 ,  나병근

IPC: H01S3/10 ,  H01S5/00

CPC classification number: H01S3/1022 ,  H01L31/0288 ,  H01S1/06 ,  H01S5/0615

Abstract: The present invention provides an oscillator and a method of manufacturing the same. The oscillator includes a first electrode, an insulating layer which is arranged on the first electrode and includes a through hole, and an antenna pattern which is arranged on the insulating layer and is made of a conductive material which covers the upper surface of the through hole. The through hole is filled with a gas. The charge particles of the gas vibrate by a DC voltage applied between the first electrode and the antenna pattern.

Abstract translation: 本发明提供一种振荡器及其制造方法。 所述振荡器包括第一电极，布置在所述第一电极上并包括通孔的绝缘层，以及布置在所述绝缘层上并且由覆盖所述通孔的上表面的导电材料制成的天线图案 。 通孔填充有气体。 气体的电荷颗粒通过施加在第一电极和天线图案之间的直流电压振动。

公开(公告)号：KR1020130065677A

公开(公告)日：2013-06-19

申请号：KR1020130056156

申请日：2013-05-20

Applicant: 한국과학기술원

Inventor： 장홍영 ,  서상훈 ,  이윤성

IPC: H05H1/46 ,  H01L21/205

CPC classification number: H01J37/32174 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32559 ,  H05H1/46 ,  H05H2001/4675 ,  H05H2001/4682

Abstract: PURPOSE: A coupled plasma generator with capacity and a substrate processing apparatus are provided to uniformly process a large area semiconductor substrate. CONSTITUTION: A first electrode (112) is configured to a circular shape and receives a first RF power of a first frequency in the center of one surface. A second electrode (114) is configured in a washer shape, receives a second RF power of a second frequency from a plurality of locations in the circumference of a circle having a specific radius in the center of one surface and arranges around the first electrode. An insulation spacer (116) is configured in a washer shape and is arranged between the first electrode and second electrode. A first RF power supply (122) supplies power to the first electrode. A second RF power supply (132) supplies power to the second electrode. A first RF power supply unit (170) is configured to a coaxial cable structure and supplies power to the first electrode. A second power distribution unit distributes the second RF power to a plurality of locations of the second electrode.

Abstract translation: 目的：提供具有容量的耦合等离子体发生器和基板处理装置以均匀地处理大面积半导体基板。 构成：第一电极（112）被配置为圆形并且在一个表面的中心接收第一频率的第一RF功率。 第二电极（114）被配置为垫圈形状，从一个表面的中心具有特定半径的圆的圆周中的多个位置接收第二频率的第二RF功率，并且围绕第一电极布置。 绝缘间隔件（116）构造成垫圈形状并且布置在第一电极和第二电极之间。 第一RF电源（122）向第一电极供电。 第二RF电源（132）向第二电极供电。 第一RF电源单元（170）被配置为同轴电缆结构并且向第一电极供电。 第二配电单元将第二RF功率分配到第二电极的多个位置。

公开(公告)号：KR1020130040168A

公开(公告)日：2013-04-23

申请号：KR1020120145015

申请日：2012-12-13

Applicant: 한국과학기술원 ,  주식회사 윈텔

Inventor： 장홍영 ,  이진원

IPC: H05H1/46 ,  H05H1/36

CPC classification number: H01J37/32825 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32183 ,  H01J37/32669 ,  H01Q1/366 ,  H05H1/46 ,  H05H2001/4667 ,  H05H2001/4682

Abstract: PURPOSE: A plasma generation apparatus is provided to form uniform helicon or inductively coupled plasma. CONSTITUTION: A plasma generation apparatus(100) includes a plurality of dielectric tubes(112a-112f,122) respectively installed in a plurality of penetration holes(111a-111f,121) formed in a vacuum container, antennae respectively mounted on the outer side of the dielectric tubes after being classified into a first group and a second group according to symmetry of being installed in the vacuum container, a first RF power supply(162) supplying power to antennae of the first group, a second RF power supply(164) supplying power to antennae of the second group and a first power distribution unit(122) distributing the power of the first RF power supply to the antennae of the first group while being arranged between the antennae of the first group and the first RF power supply.

Abstract translation: 目的：提供等离子体产生装置以形成均匀的螺旋形或电感耦合等离子体。 等离子体产生装置（100）包括分别安装在形成在真空容器中的多个贯通孔（111a-111f，121）中的多个电介质管（112a-112f，122），分别安装在外侧的天线 根据安装在真空容器中的对称性将第一组和第二组分为第一组和第二组，向第一组的天线供电的第一RF电源（162），第二组RF电源（164） ）向所述第二组的天线供电;以及第一配电单元（122），其将所述第一RF电源的功率分配给所述第一组的天线，同时布置在所述第一组的天线与所述第一RF电源 。

公开(公告)号：KR101246191B1

公开(公告)日：2013-03-21

申请号：KR1020110104792

申请日：2011-10-13

Applicant: 한국과학기술원 ,  주식회사 윈텔

Inventor： 장홍영 ,  이진원

IPC: H05H1/46 ,  H05H1/36

CPC classification number: H01J37/3211 ,  H01J37/32165 ,  H01J2237/327 ,  H05H1/46 ,  H05H2001/4667

Abstract: PURPOSE: A plasma device and a substrate processing device are provided to uniformly form helicon plasma. CONSTITUTION: Antennas are classified into a first group(116) and a second group(216) according to symmetry in a vacuum bottle. A first RF(Radio Frequency) power source(162) supplies power to an antenna of the first group. A second RF power source(164) supplies power to an antenna of the second group. A first power distribution unit(122) is arranged between the antenna of the first group and the first RF power source. The first power distribution unit distributes the power of the first RF power source to the antenna of the first group.

Abstract translation: 目的：提供等离子体装置和基板处理装置以均匀地形成螺旋形等离子体。 规定：天线根据真空瓶中的对称性分为第一组（116）和第二组（216）。 第一RF（射频）电源（162）向第一组的天线供电。 第二RF电源（164）向第二组的天线供电。 第一配电单元（122）布置在第一组的天线和第一RF电源之间。 第一配电单元将第一RF电源的功率分配给第一组的天线。

公开(公告)号：KR1020120006658A

公开(公告)日：2012-01-19

申请号：KR1020100067239

申请日：2010-07-13

Applicant: 한국과학기술원

Inventor： 장홍영 ,  이헌수

IPC: H05H1/46 ,  H05H1/34

CPC classification number: H01J37/32541 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32669 ,  H05H1/46 ,  H05H2001/4675

Abstract: PURPOSE: A capacitive coupled plasma generator is provided to prevent the degradation of the degree of uniformity by including holes which induce halo cathode discharge in a first electrode and to offer stable capacitive coupled plasma. CONSTITUTION: A first electrode(122) is connected to an RF(Radio Frequency) power source(142). The first electrode comprises a halo cathode domain. The halo cathode domain is divided into a plurality of sub halo cathode domains. The sub halo cathode domain has the form of a different hole. A second electrode(132) is arranged to be faced with the first electrode. Holes of the sub halo cathode domains are connected each other by a trench. The plasma intensity distribution of the sub halo cathode domains is controlled by the duty ratio of a pulse of the RF power source.

Abstract translation: 目的：提供电容耦合等离子体发生器，以通过包括在第一电极中引起卤素阴极放电的空穴并提供稳定的电容耦合等离子体来防止均匀度的劣化。 构成：第一电极（122）连接到RF（射频）电源（142）。 第一电极包括卤素阴极畴。 卤素阴极畴分为多个子卤素阴极畴。 子卤素阴极畴具有不同孔的形式。 第二电极（132）布置成面对第一电极。 子卤素阴极畴的孔通过沟槽彼此连接。 子卤素阴极畴的等离子体强度分布由RF电源的脉冲的占空比来控制。

公开(公告)号：KR101071092B1

公开(公告)日：2011-10-10

申请号：KR1020090069764

申请日：2009-07-30

Applicant: 한국과학기술원

Inventor： 장홍영 ,  이헌수

IPC: H05H1/34 ,  H05H1/46 ,  H05H1/24

Abstract: 본발명은내부안테나구조체를제공한다. 상기내부안테나구조체는 RF 전원에연결되고플라즈마챔버에삽입되는안테나, 및안테나의둘레에배치되는절연자켓을포함하고, 안테나는상기플라즈마챔버의내부에플라즈마를형성하고, 안테나와플라즈마는축전기를형성하고, 축전기의단위길이당 정전용량은상기안테나의길이방향에따라변한다.

公开(公告)号：KR101045598B1

公开(公告)日：2011-07-01

申请号：KR1020090043113

申请日：2009-05-18

Applicant: 한국과학기술원

Inventor： 장홍영 ,  이헌수

IPC: H01L21/205 ,  H01L21/3065 ,  H01L21/02

Abstract: 본 발명은 유체 분배 장치 및 유체 분배 방법을 제공한다. 이 방법은 예비 단위 영역들을 포함하는 예비 유체 분배부를 이용하여 기판의 최적 공정 위치를 선택하고, 및 기판의 최적 공정 위치에 대응하는 예비 유체 분배부의 구조를 전사하여 유체 분배부를 제공하는 것을 포함한다. 예비 단위 영역들 각각은 위치에 따라 서로 다른 유량을 공급하는 스플릿 영역들을 포함한다.
샤워 헤드, 유체 분배 장치, 분리 결합성, 국부적 유량 조절

Abstract translation: 本发明提供一种流体分配装置和流体分配方法。 该方法包括使用包括初步单元区域的初步流体分配区段来选择基板的最佳工艺位置，并且转移与基板的最佳工艺位置相对应的初步流体分配区段的结构以提供流体分配区段。 每个备用单元区域包括根据位置提供不同流量的分离区域。

公开(公告)号：KR1020110031303A

公开(公告)日：2011-03-25

申请号：KR1020110020169

申请日：2011-03-08

Applicant: 한국과학기술원

Inventor： 장홍영 ,  이헌수

IPC: H01L21/205 ,  H01L21/3065 ,  H01L21/02

CPC classification number: C23C16/45565 ,  H01J37/32449 ,  H01L21/67028 ,  H01L21/67069

Abstract: PURPOSE: A fluid distributing apparatus and a fluid distributing method are provided to uniformly process a substrate at high speed by reducing pressure difference between a peripheral part and a center of a large substrate. CONSTITUTION: The optimal process position of a substrate is selected by using a preliminary fluid distributing unit(S100). A fluid distributing unit is provided by transferring the structure of the preliminary fluid distributing unit corresponding to the optimal process position of the substrate(S210). Preliminary unit areas include split areas to supply a different flow rate according to each position. The substrate is tested(S220). The process uniformity is checked in a preset range of the substrate(S230). The flow rate of the fluid distributing unit corresponding to the area which does not satisfy the process uniformity is controlled(S240). The substrate is processed by using the fluid distributing unit(S250).

Abstract translation: 目的：提供流体分配装置和流体分配方法，以通过减小大基板的周边部分和中心之间的压力差来高速均匀地处理基板。 构成：通过使用预备流体分配单元选择基板的最佳工艺位置（S100）。 流体分配单元通过传送与基板的最佳处理位置对应的初步流体分配单元的结构来提供（S210）。 初步单位区域包括分割区域，以根据每个位置提供不同的流量。 测试底物（S220）。 在基板的预设范围内检查工艺均匀性（S230）。 控制对应于不满足工艺均匀性的区域的流体分配单元的流量（S240）。 通过使用流体分配单元处理基板（S250）。

公开(公告)号：KR1020110027900A

公开(公告)日：2011-03-17

申请号：KR1020090085700

申请日：2009-09-11

Applicant: 한국과학기술원

Inventor： 장홍영 ,  서상훈 ,  이헌수 ,  이윤성

IPC: H01L21/3065

CPC classification number: H01J37/32596

Abstract: PURPOSE: A plasma generating device and a substrate processing device are provided to increase a hollow cathode effect and an electron emitting effect by a hollow cathode and a needle arranged in an inner groove of the hollow cathode, thereby providing plasma of high density. CONSTITUTION: A substrate support member(130) is arranged in a processing chamber to support a substrate(W). A plurality of inner grooves from which plasma is generated is formed on one side of a hollow cathode(140). A plurality of needles(150) is fixed to the inner grooves. A power supply source(162) is electrically connected to the hollow cathode. An insertion hole penetrates the needles and the hollow cathode.

Abstract translation: 目的：提供一种等离子体发生装置和基板处理装置，以通过中空阴极和布置在中空阴极的内槽中的针增加空心阴极效应和电子发射效应，从而提供高密度的等离子体。 构成：衬底支撑构件（130）布置在处理室中以支撑衬底（W）。 在空心阴极（140）的一侧形成有从其产生等离子体的多个内槽。 多个针（150）固定在内槽上。 电源（162）电连接到空心阴极。 插入孔穿透针和空心阴极。

公开(公告)号：KR1020100111054A

公开(公告)日：2010-10-14

申请号：KR1020090029424

申请日：2009-04-06

Applicant: 한국과학기술원

Inventor： 장홍영 ,  이헌수

IPC: H01L21/687 ,  H01L21/205 ,  H01L21/3065

CPC classification number: H01J37/32541

Abstract: PURPOSE: A substrate processing device, a substrate processing method, a preliminary electrode structure, a measuring electrode structure, and a process electrode structure are provided to quickly obtain an optimal process condition by using a hollow cathode discharge electrode. CONSTITUTION: The shape of a hole is selected by checking at least one of plasma characteristic and process result according to the shape of the hole(S100). An optimal process position is selected by processing the substrate using a measuring electrode structure with the density of a hole according to a position(S200). A process electrode structure is provided by transferring the density of the hole of the measuring electrode structure corresponding to the optimal process position(S300). The process non-uniformity is compensated by using the process electrode structure(S400).

Abstract translation: 目的：提供基板处理装置，基板处理方法，预备电极结构，测量电极结构和处理电极结构，以通过使用中空阴极放电电极来快速获得最佳工艺条件。 构成：通过根据孔的形状检查等离子体特性和处理结果中的至少一个来选择孔的形状（S100）。 通过使用具有孔的密度的测量电极结构根据位置处理基板来选择最佳处理位置（S200）。 通过传递与最佳处理位置对应的测量电极结构的孔的密度来提供处理电极结构（S300）。 通过使用工艺电极结构来补偿工艺不均匀性（S400）。