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公开(公告)号：KR1020100063598A
公开(公告)日：2010-06-11
申请号：KR1020090021592
申请日：2009-03-13
Applicant: 한국전자통신연구원
IPC: H01L29/786 , B82Y10/00 , B82Y15/00
CPC classification number: G01N27/4145 , G01N27/4146 , G01N33/53 , B82Y10/00 , B82Y15/00 , H01L29/786
Abstract: PURPOSE: A biosensor of transistor structure and a manufacturing method thereof are provided to increase reactivity and a hydrophilic property between an antigen and antibody by forming a channel area of the transistor into a hydrophilic nanoparticle and an active Polymer sensing the antigen-antibody reaction. CONSTITUTION: A gate electrode(102) is formed on a substrate. A gate insulating layer(103) is formed on the gate electrode. A source and a drain electrode(104) are formed on the gate insulating layer. A channel area is formed between the source and the drain electrode. The channel area includes an active layer(105) and an active poly sensing an antigen-antibody reaction. The active layer is formed by using a hydrophilic nanoparticle.
Abstract translation: 目的：提供晶体管结构的生物传感器及其制造方法，以通过将晶体管的沟道面形成亲水性纳米粒子和检测抗原 - 抗体反应的活性聚合物来提高抗原与抗体之间的反应性和亲水性。 构成：在基板上形成栅电极（102）。 在栅电极上形成栅极绝缘层（103）。 源极和漏极（104）形成在栅极绝缘层上。 在源极和漏极之间形成沟道区。 通道区域包括活性层（105）和活性聚感测抗原 - 抗体反应。 活性层通过使用亲水性纳米颗粒形成。
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公开(公告)号：KR1020090065254A
公开(公告)日：2009-06-22
申请号：KR1020070132734
申请日：2007-12-17
Applicant: 한국전자통신연구원 , 인하대학교 산학협력단
IPC: H01L51/00 , H01L29/786
CPC classification number: H01L51/052 , H01L51/0545
Abstract: A composition for photo-reactive organic polymer gate insulating layer and an organic thin film transistor using the same are provided to minimize an influence upon a pre-process by forming a fine pattern with a low-temperature photolithography process. A composition for photo-reactive organic polymer gate insulating layer includes an insulating organic polymer, a photocrosslinking monomer, and a photo initiator. The insulating organic polymer is made of one or more elements selected from a group including polymethyl methacrylate polyvinyl alcohol, polyvinylpyrrolidone, and polyvinylphenol and a copolymer of the polymethyl methacrylate polyvinyl alcohol, polyvinylpyrrolidone, and polyvinylphenol. The photocrosslinking monomer has two or more double bonds.
Abstract translation: 提供光反应性有机聚合物栅极绝缘层的组合物和使用其的有机薄膜晶体管，以通过用低温光刻工艺形成精细图案来最小化对预处理的影响。 用于光反应性有机聚合物栅极绝缘层的组合物包括绝缘有机聚合物，光致交联单体和光引发剂。 绝缘有机聚合物由选自包括聚甲基丙烯酸甲酯聚乙烯醇，聚乙烯吡咯烷酮和聚乙烯基苯酚在内的一种或多种元素和聚甲基丙烯酸甲酯聚乙烯醇，聚乙烯吡咯烷酮和聚乙烯基苯酚的共聚物制成。 光交联单体具有两个以上的双键。
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公开(公告)号：KR1020090058792A
公开(公告)日：2009-06-10
申请号：KR1020070125549
申请日：2007-12-05
Applicant: 한국전자통신연구원
CPC classification number: G01N27/414
Abstract: A detection element is provided to improve the accuracy of detection and reduce the producing cost by using transistor structure. A detection element comprises a first substrate and a second substrate. The first substrate comprises a first frame substrate(1), a third electrode(2), dielectric layer(3), first electrode(4) and second electrode(5). The dielectric layer surrounds the circumference and upper side of the third electrode. The first and second electrodes are formed separately on the upper side of the dielectric layer. The second substrate contains the second frame substrate(6) and reactant layer(7).
Abstract translation: 提供检测元件以提高检测的精度，并且通过使用晶体管结构来降低生产成本。 检测元件包括第一基板和第二基板。 第一基板包括第一框架基板（1），第三电极（2），电介质层（3），第一电极（4）和第二电极（5）。 电介质层围绕第三电极的周边和上侧。 第一和第二电极分别形成在电介质层的上侧。 第二基板包含第二框架基板（6）和反应物层（7）。
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公开(公告)号：KR1020090058787A
公开(公告)日：2009-06-10
申请号：KR1020070125544
申请日：2007-12-05
Applicant: 한국전자통신연구원
CPC classification number: H01L51/0024 , H01L51/0545
Abstract: A detection device and a fabrication method of the detection device are provided to effectively protect an electrode with inexpensive manufacture costs, to guide the fluid to be detected, and to improve detection accuracy. A detection device comprises a base part; a first electrode and a second electrode which is separated from each other on the base part; a reaction material layer which is formed between the first electrode and the second electrode on the base part and reacts with a specific functional group within the fluid; and a protection medium layer which forms a reaction space so that a part of the reactant layer is exposed, while surrounding the first electrode and the second electrode.
Abstract translation: 提供检测装置和检测装置的制造方法，以便以便宜的制造成本有效地保护电极，引导待检测的流体，并提高检测精度。 检测装置包括基部; 第一电极和第二电极，其在基部上彼此分离; 反应材料层，其形成在所述第一电极和所述第二电极之间，并且与所述流体中的特定官能团反应; 以及保护介质层，其形成反应空间，使得反应物层的一部分暴露，同时围绕第一电极和第二电极。
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公开(公告)号：KR1020070059879A
公开(公告)日：2007-06-12
申请号：KR1020060058094
申请日：2006-06-27
Applicant: 한국전자통신연구원
IPC: H01L29/786
CPC classification number: H01L51/0004 , H01L51/0022 , H01L51/0516
Abstract: A method for fabricating an organic TFT is provided to enable formation of a fine pattern and eliminate the necessity for an additional dry process by selectively dispersing toner to only a part of a substrate to which a laser beam is irradiated to form a layer. Toner is dispersed to a predetermined part of a substrate to form a material layer by a laser printer(200) that includes an exposure part(210), a photosensitive drum(220), a developing unit(230), a transfer roller(240) and a fixing roller(250). The exposure part irradiates a laser beam according to print data received from the outside. An electrostatic latent image is formed on the photosensitive drum by the light irradiated to the exposure part. The developing unit injects the toner to make the electrostatic latent image have a visible scratch. The transfer roller transfers the toner injected to the photosensitive drum to the substrate. The transferred image is thermally compressed to the substrate by the fixing roller.
Abstract translation: 提供一种用于制造有机TFT的方法，以便能够形成精细图案，并且通过选择性地将调色剂分散到激光束照射的基板的一部分以形成层而消除额外干法的必要性。 调色剂通过包括曝光部分（210），感光鼓（220），显影单元（230），转印辊（240）的激光打印机（200）分散到基板的预定部分以形成材料层 ）和定影辊（250）。 曝光部根据从外部接收的打印数据照射激光束。 通过照射到曝光部分的光，在感光鼓上形成静电潜像。 显影单元注入调色剂以使静电潜像具有可见的划痕。 转印辊将注入感光鼓的调色剂转印到基材上。 转印图像通过定影辊被热压到基底上。
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Patent Agency Ranking
公开(公告)号：KR100668408B1
公开(公告)日：2007-01-16
申请号：KR1020040103695
申请日：2004-12-09
Applicant: 한국전자통신연구원
IPC: H01L51/40
CPC classification number: H01L51/0021 , H01L51/0024 , H01L51/0097 , H01L51/0512
Abstract: 본 발명은 유기 전계효과 트랜지스터의 제조방법에 관한 것으로, 보다 상세하게는 기판 상에 게이트 전극, 유전층, 소오스/드레인 전극 및 유기 반도체가 포함된 유기 전계효과 트랜지스터 패턴을 형성하는 단계와, 상기 소오스/드레인 전극 및 상기 유기 반도체의 전체 상부면에 소정의 접착제가 형성된 접합층을 부착시킨 후 상기 기판에서 상기 유기 전계효과 트랜지스터 패턴을 분리시키는 단계와, 분리된 상기 유기 전계효과 트랜지스터 패턴을 미리 마련된 플라스틱 기판 상에 전사시키는 단계를 포함함으로써, 온도에 영향을 받지 않고 증착할 수 있으므로 유전층의 종류에 제약을 받지 않을 뿐만 아니라 전사시키는 방법 중에서도 그 공정 자체가 매우 간단하며, 전사방법 자체가 외부 공기나 수분으로부터 유기물을 보호하는 보호층 역할까지 하여 그 특성을 오래 유지시킬 수 있는 효과가 있다.
유기 전계효과 트랜지스터(OFET), 전사효과, 소오스 전극, 드레인 전극, 유전층, 기판, 테이프-
公开(公告)号：KR100609699B1
公开(公告)日：2006-08-08
申请号：KR1020040055096
申请日：2004-07-15
Applicant: 한국전자통신연구원
IPC: H01L27/115
CPC classification number: H01L45/04 , H01L45/1226 , H01L45/1233 , H01L45/14 , H01L45/146 , H01L45/147 , H01L45/148 , H01L45/1625
Abstract: 본 발명의 급격한 금속-절연체 전이 반도체물질을 이용한 2단자 반도체 소자는, 제1 전극막과, 제1 전극막 위에 배치되는 2eV 이하의 에너지 갭과 정공 준위내의 정공을 갖는 급격한 금속-절연체 전이 반도체 물질막과, 그리고 급격한 금속-절연체 전이 반도체 물질막 위에 배치되는 제2 전극막을 구비한다. 이에 따르면 제1 전극막 및 제2 전극막 사이에 인가되는 전계에 의해 상기 급격한 금속-절연체 전이 반도체 물질막에서는 구조적 상전이가 아닌 정공 도핑에 의한 급격한 금속-절연체 전이가 발생한다.
금속-절연체 전이, 반도체 소자, 온도센서, 광전센서, 메모리 소자-
公开(公告)号：KR1020040053436A
公开(公告)日：2004-06-24
申请号：KR1020020079990
申请日：2002-12-14
Applicant: 한국전자통신연구원
IPC: H01L29/786
CPC classification number: H01L51/057 , H01L29/41733 , H01L29/78642 , H01L29/78696 , H01L51/0036 , H01L51/0041 , H01L51/0052 , H01L51/0516
Abstract: PURPOSE: A vertical structure semiconductor TFT(Thin Film Transistor) is provided to be capable of maximizing the surface area for flowing current and improving the driving speed of a device. CONSTITUTION: A vertical structure semiconductor TFT is completed by sequentially depositing the first electrode(220), a dielectric thin film(230), the second electrode(240), an organic semiconductor thin film(260), and the third electrode(250) on a substrate(210). At this time, predetermined current vertically flows between the second and third electrode. The predetermined current is controlled by the electric field generated from the first electrode, wherein the electric field parallels the predetermined current. Preferably, the substrate is one selected from a group consisting of a silicon mono-crystal, glass, or plastic substrate.
Abstract translation: 目的：提供垂直结构半导体TFT（薄膜晶体管），以使流过电流的表面积最大化并提高器件的驱动速度。 构成：通过依次沉积第一电极（220），电介质薄膜（230），第二电极（240），有机半导体薄膜（260）和第三电极（250）来完成垂直结构半导体TFT， 在衬底（210）上。 此时，预定电流在第二和第三电极之间垂直流动。 预定电流由从第一电极产生的电场控制，其中电场平行于预定电流。 优选地，所述衬底是选自由单晶硅，玻璃或塑料衬底组成的组中的一种。
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公开(公告)号：KR1020030008993A
公开(公告)日：2003-01-29
申请号：KR1020010044057
申请日：2001-07-21
Applicant: 한국전자통신연구원
IPC: C07F7/30
CPC classification number: C09K11/06 , C08G61/02 , C08G61/10 , H01L51/0039 , H01L51/50 , Y10S428/917
Abstract: PURPOSE: A spirobifluorene compound, an electro luminescence polymer, and an electro luminescence device containing the same are provided, thereby producing the high quality electro luminescence polymer. CONSTITUTION: The spirobifluorene compound is represented by the formula, wherein R1 and R2 are the same or different each other, and independently linear or branched C1-C22 alkyl or aryl substituted with C1-C22 alkyl, in which at least one of R1 and R2 is selected from the group consisting of O, N, S, Si and Ge; and X is halogen, boron or boron ester. The electro luminescence device comprises a glass board(10), a transparent electrode(12), a buffer layer(14), a luminescence polymer layer(16), an insulating layer(18) and a metal electrode layer(20).
Abstract translation: 目的：提供螺二芴化合物，电致发光聚合物和含有它们的电致发光器件，从而产生高质量的电致发光聚合物。 构成：螺二芴化合物由下式表示，其中R 1和R 2彼此相同或不同，并且独立地为C 1 -C 22烷基取代的直链或支链C 1 -C 22烷基或芳基，其中R 1和R 2中的至少一个 选自O，N，S，Si和Ge; 且X为卤素，硼或硼酸酯。 电致发光器件包括玻璃板（10），透明电极（12），缓冲层（14），发光聚合物层（16），绝缘层（18）和金属电极层（20）。
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公开(公告)号：KR1020020051289A
公开(公告)日：2002-06-28
申请号：KR1020000080894
申请日：2000-12-22
Applicant: 한국전자통신연구원
IPC: G02F1/136
Abstract: PURPOSE: A method of patterning an indium tin oxide layer on a plastic thin film and a rotary coater used for the method are provided to coat photoresist in uniform thickness and prevent undercut generated in the event of wet etching. CONSTITUTION: An ITO layer(11) is formed on a plastic substrate(10), and photoresist is coated on the ITO layer. Heat treatment is performed in order to remove a solvent contained in the coated photoresist. Ultraviolet rays are irradiated on a portion of the ITO layer, which is etched, using a patterned mask. The exposed portion of the photoresist is developed. Heat treatment is carried out to eliminate moisture and solvent left in the photoresist. The ITO layer is dipped in an ITO etchant using the patterned photoresist as a mask to wet-etch the ITO layer. The photoresist used as the mask is stripped.
Abstract translation: 目的：提供在塑料薄膜上形成铟锡氧化物层的方法和用于该方法的旋转涂布机，以均匀的厚度涂覆光致抗蚀剂，并防止在湿蚀刻情况下产生的底切。 构成：在塑料基板（10）上形成ITO层（11），在ITO层上涂布光致抗蚀剂。 进行热处理以除去涂覆的光致抗蚀剂中所含的溶剂。 使用图案化掩模将紫外线照射在蚀刻的ITO层的一部分上。 光刻胶的曝光部分显影。 进行热处理以消除残留在光致抗蚀剂中的水分和溶剂。 使用图案化的光致抗蚀剂作为掩模将ITO层浸入ITO蚀刻剂中以湿蚀刻ITO层。 剥离用作掩模的光致抗蚀剂。
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