公开(公告)号：US20240093363A1

公开(公告)日：2024-03-21

申请号：US18522778

申请日：2023-11-29

Applicant: ASM IP Holding B.V.

Inventor： Charles Dezelah ,  Eric James Shero ,  Qi Xie ,  Giuseppe Alessio Verni ,  Petro Deminskyi

IPC: C23C16/455 ,  C23C16/52

CPC classification number: C23C16/45534 ,  C23C16/45553 ,  C23C16/52

Abstract: The current disclosure relates to the manufacture of semiconductor devices, specifically to methods of forming vanadium metal on a substrate. The methods comprise providing a substrate in a reaction chamber, providing a vanadium precursor to the reaction chamber in a vapor phase and providing a reducing agent to the reaction chamber in a vapor phase to form vanadium metal on the substrate. The disclosure further relates to structures and devices formed by the methods, as well as to a deposition assembly.

公开(公告)号：US11827978B2

公开(公告)日：2023-11-28

申请号：US17688258

申请日：2022-03-07

Applicant: ASM IP Holding B.V.

Inventor： Eric Christopher Stevens ,  Bhushan Zope ,  Shankar Swaminathan ,  Charles Dezelah ,  Qi Xie ,  Giuseppe Alessio Verni

IPC: C23C16/34 ,  C23C16/02 ,  C23C16/08 ,  C23C16/455 ,  H01L27/108 ,  H01L21/28 ,  H01L29/06 ,  H01L29/423 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  G11C5/06 ,  H10B12/00

CPC classification number: C23C16/34 ,  C23C16/0272 ,  C23C16/08 ,  C23C16/45527 ,  C23C16/45553 ,  G11C5/063 ,  H01L21/28088 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/4908 ,  H01L29/4966 ,  H01L29/7851 ,  H01L29/78696 ,  H10B12/053 ,  H10B12/34 ,  H10B12/488

Abstract: Methods for depositing a molybdenum nitride film on a surface of a substrate are disclosed. The methods may include: providing a substrate into a reaction chamber; and depositing a molybdenum nitride film directly on the surface of the substrate by performing one or more unit deposition cycles of cyclical deposition process, wherein a unit deposition cycle may include, contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor, and contacting the substrate with a second vapor phase reactant comprising a nitrogen precursor. Semiconductor device structures including a molybdenum nitride film are also disclosed.

公开(公告)号：US20230357924A1

公开(公告)日：2023-11-09

申请号：US18141125

申请日：2023-04-28

Applicant: ASM IP Holding B.V.

Inventor： Eric James Shero ,  Charles Dezelah ,  Ren-Jie Chang ,  Qi Xie ,  Perttu Sippola ,  Petri Raisanen

IPC: C23C16/40 ,  C23C16/04 ,  C23C16/44 ,  C23C16/455 ,  H01L21/02 ,  H01L21/768

CPC classification number: C23C16/405 ,  C23C16/045 ,  C23C16/4408 ,  C23C16/45553 ,  H01L21/02175 ,  H01L21/02205 ,  H01L21/0228 ,  H01L21/76831

Abstract: Vapor deposition methods and related systems are provided for depositing layers comprising vanadium and oxygen. In some embodiments, the methods comprise contacting a substrate in a reaction space with alternating pulses of a vapor-phase vanadium precursor and a vapor-phase oxygen reactant. The reaction space may be purged, for example, with an inert gas, between reactant pulses. The methods may be used to fill a gap on a substrate surface. Reaction conditions, including deposition temperature and reactant pulse and purge times may be selected to achieve advantageous gap fill properties. In some embodiments, the substrate on which deposition takes place is maintained at a relatively low temperature, for example between about 50° C. and about 185° C.

公开(公告)号：US20230243032A1

公开(公告)日：2023-08-03

申请号：US18103594

申请日：2023-01-31

Applicant: ASM IP Holding B.V.

Inventor： Charles Dezelah ,  Andrea Illiberi ,  Varun Sharma ,  Bart Vermeulen ,  Michael Givens

IPC: C23C16/30 ,  C23C16/455 ,  C23C16/56

CPC classification number: C23C16/30 ,  C23C16/45553 ,  C23C16/56

Abstract: A method and system for forming a copper iodide layer on a surface of a substrate are disclosed. Exemplary methods include using a cyclic deposition process that includes providing a copper precursor to a reaction chamber and providing an iodine reactant to the reaction chamber. Exemplary methods can further include providing a reducing agent and/or providing a dopant reactant to the reaction chamber. Structures formed using the method are also described. The structures can be used to form devices, such as memory devices.

公开(公告)号：US20230170221A1

公开(公告)日：2023-06-01

申请号：US18056169

申请日：2022-11-16

Applicant: ASM IP Holding, B.V.

Inventor： Charles Dezelah ,  Viljami Pore ,  Varun Sharma

IPC: H01L21/306

CPC classification number: H01L21/30621

Abstract: The current disclosure relates to a method of etching etchable material from a semiconductor substrate is disclosed. Th method comprises providing a substrate comprising the etchable material into a reaction chamber and providing a haloalkylamine into the reaction chamber in vapor phase for etching the etchable material. The disclosure further relates to a semiconductor processing assembly, and to a method of cleaning a reaction chamber.

公开(公告)号：US20230140367A1

公开(公告)日：2023-05-04

申请号：US18050114

申请日：2022-10-27

Applicant: ASM IP Holding, B.V.

Inventor： Viraj Madhiwala ,  Daniele Chiappe ,  Eva Tois ,  Marko Tuominen ,  Charles Dezelah ,  Shaoren Deng ,  Anirudhan Chandrasekaran ,  YongGyu Han ,  Michael Givens ,  Andrea llliberi ,  Vincent Vandalon

IPC: C23C16/40 ,  H01J37/32 ,  C23C16/455

Abstract: Methods and vapor deposition assemblies of selectively depositing material comprising silicon and oxygen on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process are disclosed. The methods comprise providing a substrate into a reaction chamber, providing a metal or metalloid catalyst into the reaction chamber in a vapor phase, providing a silicon precursor comprising an alkoxy silane compound into the reaction chamber in a vapor phase and providing a plasma into the reaction chamber to form a reactive species for forming a material comprising silicon and oxygen on the first surface. The methods may comprise subcycles for, for example, adjusting the proportions of material components.

公开(公告)号：US20230096838A1

公开(公告)日：2023-03-30

申请号：US17953847

申请日：2022-09-27

Applicant: ASM IP Holding B.V.

Inventor： Jan Willem Maes ,  Elina Färm ,  Charles Dezelah ,  Shinya Iwashita

IPC: H01L21/768 ,  H01L21/02 ,  C23C16/455 ,  C23C16/18

Abstract: Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method comprises filling the gap with a metal-containing material.

公开(公告)号：US20230078233A1

公开(公告)日：2023-03-16

申请号：US17989081

申请日：2022-11-17

Applicant: ASM IP Holding B.V.

Inventor： Eric James Shero ,  Michael Eugene Givens ,  Qi Xie ,  Charles Dezelah ,  Giuseppe Alessio Verni

IPC: H01L21/02 ,  H01L29/66 ,  H01L29/06 ,  H01L29/423 ,  H01L27/092

Abstract: Methods and systems for depositing vanadium and/or indium layers onto a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process, depositing a vanadium and/or indium layer onto the surface of the substrate. The cyclical deposition process can include providing a vanadium and/or indium precursor to the reaction chamber and separately providing a reactant to the reaction chamber. The cyclical deposition process may desirably be a thermal cyclical deposition process. Exemplary structures can include field effect transistor structures, such as gate all around structures. The vanadium and/or indium layers can be used, for example, as barrier layers or liners, as work function layers, as dipole shifter layers, or the like.

公开(公告)号：US20230077088A1

公开(公告)日：2023-03-09

申请号：US17900065

申请日：2022-08-31

Applicant: ASM IP Holding B.V.

Inventor： Arpita Saha ,  David de Roest ,  Michael Givens ,  Charles Dezelah ,  Monica Thukkaram ,  Daniele Piumi

IPC: G03F1/22

Abstract: Methods of forming structures including a photoresist absorber layer and structures including the absorber layer underlying an extreme ultraviolet (EUV) photoresist are disclosed. Exemplary methods include forming the photoresist absorber layer or underlayer with an oxide of a high atomic number (z) element having an EUV cross section (σα) of greater than 2×106 cm2/mol and then forming the EUV photoresist over the high-z underlayer.

公开(公告)号：US20230059464A1

公开(公告)日：2023-02-23

申请号：US17818062

申请日：2022-08-08

Applicant: ASM IP Holding, B.V.

Inventor： Yoann Tomczak ,  Ivan Zyulkov ,  David Kurt de Roest ,  Michael Eugence Givens ,  Daniele Piumi ,  Charles Dezelah

IPC: H01L21/768 ,  H01L21/027 ,  G03F7/004 ,  G03F7/20

Abstract: Methods of forming patterned features on a surface of a substrate are disclosed. Exemplary methods include gas-phase formation of a layer comprising an oxalate compound on a surface of the substrate. Portions of the layer comprising the oxalate compound can be exposed to radiation or active species that form exposed and unexposed portions. Material can be selectively deposed onto the exposed or the unexposed portions.