公开(公告)号：US11830732B2

公开(公告)日：2023-11-28

申请号：US17470177

申请日：2021-09-09

Applicant: ASM IP HOLDING B.V.

Inventor： Jan Willem Hub Maes ,  Michael Eugene Givens ,  Suvi P. Haukka ,  Vamsi Paruchuri ,  Ivo Johannes Raaijmakers ,  Shaoren Deng ,  Andrea Illiberi ,  Eva E. Tois ,  Delphine Longrie ,  Viljami Pore

IPC: H01L21/02 ,  H01L21/324 ,  H01L21/67

CPC classification number: H01L21/0228 ,  H01L21/02068 ,  H01L21/02118 ,  H01L21/02178 ,  H01L21/02315 ,  H01L21/02669 ,  H01L21/324 ,  H01L21/67213

Abstract: Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.

公开(公告)号：US11798834B2

公开(公告)日：2023-10-24

申请号：US17741562

申请日：2022-05-11

Applicant: ASM IP Holding B.V.

Inventor： Zecheng Liu ,  Viljami Pore

IPC: H01L21/762 ,  C23C16/04 ,  H01L21/02 ,  C23C16/455

CPC classification number: H01L21/76224 ,  C23C16/04 ,  C23C16/45536 ,  C23C16/45544 ,  H01L21/0228 ,  H01L21/02274

Abstract: There is provided a method of filling one or more recesses by providing the substrate in a reaction chamber; introducing a first reactant, to form first active species, for a first pulse time to the substrate; introducing a second reactant for a second pulse time to the substrate; and introducing a third reactant, to form second active species, for a third pulse time to the substrate. An apparatus for filling a recess is also disclosed and a structure formed using the method and/or apparatus is disclosed.

公开(公告)号：US11728164B2

公开(公告)日：2023-08-15

申请号：US17450538

申请日：2021-10-11

Applicant: ASM IP HOLDING B.V.

Inventor： Eva Tois ,  Viljami Pore ,  Suvi Haukka ,  Toshiya Suzuki ,  Lingyun Jia ,  Sun Ja Kim ,  Oreste Madia

IPC: C23C16/40 ,  C23C16/455 ,  H01L21/02

CPC classification number: H01L21/02274 ,  C23C16/401 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/0228 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02186 ,  H01L21/02216

Abstract: Methods for selectively depositing oxide thin films on a dielectric surface of a substrate relative to a metal surface are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a first precursor comprising oxygen and a species to be included in the oxide, such as a metal or silicon, and a second plasma reactant. In some embodiments the second plasma reactant comprises a plasma formed in a reactant gas that does not comprise oxygen. In some embodiments the second plasma reactant comprises plasma generated in a gas comprising hydrogen.

公开(公告)号：US20230243036A1

公开(公告)日：2023-08-03

申请号：US18132593

申请日：2023-04-10

Applicant: ASM IP Holding B.V.

Inventor： Marko Tuominen ,  Viljami Pore

IPC: C23C16/458 ,  C23C16/509 ,  C23C16/517 ,  C23C16/56 ,  C23C16/52 ,  C23C16/455

CPC classification number: C23C16/4586 ,  C23C16/509 ,  C23C16/517 ,  C23C16/56 ,  C23C16/52 ,  C23C16/45536 ,  C23C16/45565

Abstract: Systems for depositing materials and related methods are described. The systems allow condensing or depositing a precursor on a substrate, and then curing condensed or deposited precursor to form a layer.

公开(公告)号：US20230095086A1

公开(公告)日：2023-03-30

申请号：US17953803

申请日：2022-09-27

Applicant: ASM IP Holding B.V.

Inventor： Timothee Blanquart ,  René Henricus Jozef Vervuurt ,  Giuseppe Alessio Verni ,  Ren-Jie Chang ,  Charles Dezelah ,  Qi Xie ,  Viljami Pore

IPC: H01L21/285

Abstract: Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises forming a gap filling process by means of a plasma-enhanced deposition process. The gap filling fluid at least partially fills the gap. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

公开(公告)号：US11587783B2

公开(公告)日：2023-02-21

申请号：US17101428

申请日：2020-11-23

Applicant: ASM IP HOLDING B.V.

Inventor： Antti J. Niskanen ,  Shang Chen ,  Viljami Pore ,  Atsuki Fukazawa ,  Hideaki Fukuda ,  Suvi P. Haukka

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/8234

Abstract: Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%).

公开(公告)号：US20220293463A1

公开(公告)日：2022-09-15

申请号：US17680607

申请日：2022-02-25

Applicant: ASM IP Holding B.V.

Inventor： René Henricus Jozef Vervuurt ,  Timothee Blanquart ,  Viljami Pore ,  Giuseppe Alessio Verni ,  Qi Xie ,  Ren-Jie Chang ,  Eric James Shero

IPC: H01L21/768 ,  H01L21/02

Abstract: Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises at least partially filling the gap with a gap filling fluid. The method then comprises subjecting the gap filling fluid to a transformation treatment, thus forming a transformed material in the gap. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

公开(公告)号：US20220181148A1

公开(公告)日：2022-06-09

申请号：US17457858

申请日：2021-12-06

Applicant: ASM IP HOLDING B.V.

Inventor： Charles Dezelah ,  Hideaki Fukuda ,  Viljami Pore

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/34 ,  C23C16/455 ,  C23C16/52

Abstract: The current disclosure relates to a vapor deposition assembly for depositing silicon nitride on a substrate by a plasma-enhanced cyclic deposition process. The disclosure also relates to a method for depositing silicon nitride on a substrate by a plasma-enhanced cyclic deposition process. The method comprises providing a substrate in a reaction chamber, providing a vapor-phase silicon precursor according to the formula SiH3X, wherein X is iodine or bromine, into the reaction chamber, removing excess silicon precursor and possible reaction byproducts from the reaction chamber and providing a reactive species generated from a nitrogen-containing plasma into the reaction chamber to form silicon nitride on the substrate. The disclosure further relates to structure and devices formed by the method.

公开(公告)号：US20220165569A1

公开(公告)日：2022-05-26

申请号：US17530983

申请日：2021-11-19

Applicant: ASM IP Holding B.V.

Inventor： Zecheng Liu ,  Sunja Kim ,  Viljami Pore ,  Jia Li Yao ,  Ranjit Borude ,  Bablu Mukherjee ,  René Henricus Jozef Vervuurt ,  Takayoshi Tsutsumi ,  Nobuyoshi Kobayashi ,  Masaru Hori

IPC: H01L21/02 ,  H01L21/762 ,  H01J37/32 ,  C23C16/40 ,  C23C16/02 ,  C23C16/455

Abstract: Methods and related systems for filling a gap feature comprised in a substrate are disclosed. The methods comprise a step of providing a substrate comprising one or more gap features into a reaction chamber. The one or more gap features comprise an upper part comprising an upper surface and a lower part comprising a lower surface. The methods further comprise a step of subjecting the substrate to a plasma treatment. Thus, the upper surface is inhibited while leaving the lower surface substantially unaffected. Then, the methods comprise a step of selectively depositing a silicon-containing material on the lower surface.

公开(公告)号：US11342216B2

公开(公告)日：2022-05-24

申请号：US16792544

申请日：2020-02-17

Applicant: ASM IP Holding B.V.

Inventor： Zecheng Liu ,  Viljami Pore

IPC: H01L21/762 ,  H01L21/02 ,  C23C16/04 ,  C23C16/455

Abstract: There is provided a method of filling one or more recesses by providing the substrate in a reaction chamber; introducing a first reactant, to form first active species, for a first pulse time to the substrate; introducing a second reactant for a second pulse time to the substrate; and introducing a third reactant, to form second active species, for a third pulse time to the substrate. An apparatus for filling a recess is also disclosed and a structure formed using the method and/or apparatus is disclosed.