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公开(公告)号:USD782427S1
公开(公告)日:2017-03-28
申请号:US29552985
申请日:2016-01-27
Applicant: EPISTAR CORPORATION
Designer: Hui-Chun Yeh , Chien-Fu Shen , Tsun-Kai Ko
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公开(公告)号:USD781254S1
公开(公告)日:2017-03-14
申请号:US29553203
申请日:2016-01-29
Applicant: EPISTAR CORPORATION
Designer: Hui-Chun Yeh , Chien-Fu Shen , Tsun-Kai Ko
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公开(公告)号:US09461208B2
公开(公告)日:2016-10-04
申请号:US15050917
申请日:2016-02-23
Applicant: EPISTAR CORPORATION
Inventor: Schang-Jing Hon , Chao-Hsing Chen , Tsun-Kai Ko , Chien-Fu Shen , Jia-Kuen Wang , Hung-Che Chen
CPC classification number: H01L33/387 , H01L33/20 , H01L33/24 , H01L33/38 , H01L33/44 , H01L33/46 , H01L33/54 , H01L33/62 , H01L2224/73265
Abstract: A light-emitting element comprises a light-emitting semiconductor stack comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode comprising multiple contact areas and multiple extension areas, wherein the multiple contact areas are physically separated from one another; and a first conductive part and a second conductive part formed on the light-emitting semiconductor stack and respectively electrically connected to the first semiconductor layer and the second semiconductor layer, wherein the first conductive part and the second conductive part each comprises a concave-convex profile.
Abstract translation: 发光元件包括:发光半导体堆叠,包括第一半导体层,第一半导体层上的第二半导体层和第一半导体层与第二半导体层之间的发光层; 第一电极,其包括多个接触区域和多个延伸区域,其中所述多个接触区域彼此物理分离; 以及形成在所述发光半导体堆叠上并分别电连接到所述第一半导体层和所述第二半导体层的第一导电部分和第二导电部分,其中所述第一导电部分和所述第二导电部分各自包括凹凸轮廓 。
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公开(公告)号:US09276173B2
公开(公告)日:2016-03-01
申请号:US14474633
申请日:2014-09-02
Applicant: Epistar Corporation
Inventor: Chien-Fu Shen , Cheng-Ta Kuo , Wei-Shou Chen , Tsung-Hsien Liu , Yi-Wen Ku , Min-Hsun Hsieh
CPC classification number: H01L33/38 , H01L24/02 , H01L33/20 , H01L33/62 , H01L2224/04042 , H01L2224/48463 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
Abstract: A light-emitting device comprises: a light-emitting stack having an upper side, a first edge having an end point, and a second edge opposite to the first edge; a first bonding region arranged on the upper side, near the first edge, and far from the end point; a second bonding region separated from to the first bonding region by a first distance and being far from the end point; a third bonding region arranged on the upper side; a fourth bonding region separated from the third bonding region by a second distance longer than the first distance; a first electrode connected to the first bonding region; a second electrode connected to the second bonding region; a third electrode connected to the third bonding region; a fourth electrode connected to the fourth bonding region; and a fifth electrode connected to the first bonding region and pointing to the fourth bonding region.
Abstract translation: 发光装置包括:具有上侧的发光叠层,具有端点的第一边缘和与第一边缘相对的第二边缘; 第一接合区域,其布置在上侧,靠近第一边缘并且远离端点; 第二接合区域,与第一接合区域分离第一距离并且远离端点; 布置在上侧的第三接合区域; 第四接合区域,与所述第三接合区域隔开比所述第一距离长的第二距离; 连接到所述第一接合区域的第一电极; 连接到所述第二接合区域的第二电极; 连接到所述第三接合区域的第三电极; 连接到第四接合区域的第四电极; 以及连接到第一接合区域并指向第四接合区域的第五电极。
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75.
公开(公告)号:US09269855B2
公开(公告)日:2016-02-23
申请号:US14097150
申请日:2013-12-04
Applicant: Epistar Corporation
Inventor: Chien-Kai Chung , Ya Lan Yang , Ting-Chia Ko , Tsun-Kai Ko , Jung-Min Hwang , Schang-Jing Hon , De-Shan Kuo , Chien-Fu Shen , Ta-Cheng Hsu , Min-Hsun Hsieh
IPC: H01L21/00 , H01L33/00 , H01L21/02 , H01L21/304
CPC classification number: H01L33/005 , H01L21/02057 , H01L21/3043 , H01L33/0095
Abstract: A method of manufacturing a light-emitting device comprising the steps of cutting a substrate by a laser beam to form a cavity in the substrate and generate a by-product directly on the substrate by the cutting, and removing the by-product by a chemical solution containing an acid under a predetermined cleaning temperature.
Abstract translation: 一种制造发光器件的方法,包括以下步骤:通过激光束切割衬底以在衬底中形成空腔,并通过切割直接在衬底上产生副产物,并通过化学物质除去副产物 溶液在预定的清洁温度下含有酸。
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公开(公告)号:USD716238S1
公开(公告)日:2014-10-28
申请号:US29453527
申请日:2013-04-30
Applicant: Epistar Corporation
Designer: Hui-chun Yeh , Chien-Fu Shen , Tsun-Kai Ko
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公开(公告)号:USD709841S1
公开(公告)日:2014-07-29
申请号:US29464975
申请日:2013-08-22
Applicant: Epistar Corporation
Designer: Hui-Chun Yeh , Chien-Fu Shen , Tsun-Kai Ko
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