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    Light-emitting device
    4.
    发明授权
    Light-emitting device 有权

    公开(公告)号：US09601674B2

    公开(公告)日：2017-03-21

    申请号：US14825787

    申请日：2015-08-13

    Applicant: EPISTAR CORPORATION

    Inventor： Hui-Chun Yeh ,  Chien-Fu Shen ,  Tsun-Kai Ko

    IPC: H01L33/62 ,  H01L33/24 ,  H01L27/15

    CPC classification number: H01L27/156 ,  H01L33/145 ,  H01L33/38

    Abstract: A light-emitting device, including a substrate; a plurality of light-emitting units formed on the substrate, wherein the plurality of light-emitting units include a first light-emitting unit; a second light-emitting unit; and a group of light-emitting units formed between the first light-emitting unit and the second light-emitting unit, wherein each of the plurality of light-emitting unit includes a first-type semiconductor layer, a second-type semiconductor layer and an active layer formed between the first-type semiconductor layer and the second-type semiconductor layer; a plurality of electrical connections formed on the plurality of light-emitting units, electrically connecting each two of the light-emitting units adjacent; a first pad formed on the first light-emitting unit; a second pad and a third pad formed on the second light-emitting unit; wherein one of the plurality of electrical connection connects and extends from the second pad.

    Optoelectronic semiconductor device
    6.
    发明授权
    Optoelectronic semiconductor device 有权

    公开(公告)号：US09876146B2

    公开(公告)日：2018-01-23

    申请号：US15256263

    申请日：2016-09-02

    Applicant: EPISTAR CORPORATION

    Inventor： Tsun-Kai Ko ,  Schang-Jing Hon ,  Chien-Kai Chung ,  Hui-Chun Yeh ,  An-Ju Lin ,  Chien-Fu Shen ,  Chen Ou

    IPC: H01L33/06 ,  H01L33/14 ,  H01L33/22 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44

    CPC classification number: H01L33/387 ,  H01L33/06 ,  H01L33/14 ,  H01L33/22 ,  H01L33/382 ,  H01L33/42 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: An optoelectronic semiconductor device comprises a substrate; a semiconductor system including a first conductivity layer, a second conductivity layer, and a conversion unit between the first conductivity layer and the second conductivity layer, wherein the first conductivity layer is closer to the substrate than the second conductivity layer is to the substrate, and the second conductivity layer comprises a top surface perpendicular to a thickness direction of the semiconductor system, and in a top view of the semiconductor system, an outline of the first conductivity layer surrounds an outline of the second conductivity layer; a first electrical connector on the first conductivity layer of the semiconductor system; a second electrical connector comprising a shape formed on the second conductivity layer of the semiconductor system; and a contact layer formed on the top surface of the second conductivity layer and having an outer perimeter at an inner side of the outline of the second conductivity layer in the top view of the semiconductor system, wherein the contact layer comprises a discontinuous region exposing the top surface of the second conductivity layer, the discontinuous region is formed along the shape of the second electrical connector.

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