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公开(公告)号：JP2000215788A
公开(公告)日：2000-08-04
申请号：JP34795599
申请日：1999-10-31
Applicant: NEC CORP
Inventor： TAKEMURA HISASHI , YAMAMOTO HIROCHIKA , BABA KAZUHIRO , YOSHIKI MASAYUKI
Abstract: PROBLEM TO BE SOLVED: To provide a device capable of realizing a high emission current characteristic by forming a sharp-shaped emitter and by forming precisely plural emitters, in a field emission type cold cathode having emitters comprising a carbon film, and its manufacturing method. SOLUTION: This field emission type cold cathode, having an emitter formed from carbon material, has plural projections of a needle-shaped carbon film 2 on a substrate electrode 1. Hereby the field emission type cold cathode having a high current characteristic can be obtained. The field emission type cold cathode having the emitter comprising the needle-shaped and densely formed carbon can be formed easily by executing an ECR plasma treatment in hydrogen gas on the carbon film 2 formed on the substrate electrode 1.
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公开(公告)号：JP2000123712A
公开(公告)日：2000-04-28
申请号：JP28970998
申请日：1998-10-12
Applicant: NEC CORP
Inventor： BABA KAZUHIRO , YAMAMOTO HIROCHIKA
Abstract: PROBLEM TO BE SOLVED: To provide an inexpensive large plane field emission cold cathode without need for particular processing such as acumination of an electron emission part etc. SOLUTION: In this field emission cold cathode composed of an electron emission part 2a and an electrode for impressing voltage on the electron emission part 2a, the electron emission part 2a is made of a mixture of a carbon material and a carbon material easily emitting electrons. The carbon material and the carbon material easily emitting electrons (e.g. low work function material) are stirred in a solvent and dispersed to be formed into paste. Thereafter, it is applied on a substrate 20 of metal, a semiconductor or an insulator, and baked in a vacuum or in an inert gas atmosphere, to form a film 21 which is used as the electron emission part 2a. Thus, the cold cathode enabling electron emission at low-voltage can be formed.
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公开(公告)号：JP2000090423A
公开(公告)日：2000-03-31
申请号：JP25736698
申请日：1998-09-11
Applicant: NEC CORP
Inventor： SHIMURA KENICHI , BABA KAZUHIRO
Abstract: PROBLEM TO BE SOLVED: To form a protective film consisting of hard amorphous carbon on the surface part of a slider facing to a magnetic recording medium by forming a hard amorphous carbon film on the surface of a slider main body facing the magnetic recording medium and removing the surface area having low wear resistance of the hard amorphous carbon film to form a protective film. SOLUTION: A base layer 2 is formed on the surface of a slider main body 1 made of Al2O3-TiC (AlTiC) or the like. The material of the slider main body 1 may be another material except for AlTiC and for example, ZrO or the like. The compsn. of the base layer 2 is not limited as far as the layer acts as an adhesion layer. Or, formation of the base layer 2 is not necessarily required if the base layer can achieve adhesion strength required for the protective layer. Then, a hard amorphous carbon film 3 is formed on the base layer. At this time, the surface of the hard amorphous carbon film 3 has a surface region having lower wear resistance than that in an inner region 3a. Generally the hard amorphous carbon film consists of a graphite component and a diamond component.
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公开(公告)号：JPH11120529A
公开(公告)日：1999-04-30
申请号：JP27894897
申请日：1997-10-13
Applicant: NEC CORP
Inventor： SHIMURA KENICHI , BABA KAZUHIRO
Abstract: PROBLEM TO BE SOLVED: To form a thin protective film with good adhesion property without forming an intermediate layer, to improve friction and wear characteristics and to realize an extremely thin film by forming a protective film on the floating face of a slider base body and changing the surface of the slider base body to be in contact with the protective film into an amorphous state. SOLUTION: The surface of a slider base body comprising Al2 O3 -TiC or the like is irradiated with neutral particles of 0.5 to 2 keV energy in a vacuum chamber by using a high frequency plasma device. The crystal structure of the surface of the slider body is broken and an amorphous layer is formed to 1 to 10 nm depth. In the same vacuum chamber without exposing the amorphous layer to air, the source material gas for a protective film is introduced to form a protective film on the amorphous layer. The protective film is formed by sputtering, CVD, ion beam vapor deposition or laser vapor deposition to form a hard amorphous carbon film. Thus, the obtd. protective film has >=10 Ω.cm resistivity and >=1 MV/cm dielectric breakdown voltage. The obtd. floating face is also effective to prevent arc discharge.
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公开(公告)号：JPH09245332A
公开(公告)日：1997-09-19
申请号：JP4877596
申请日：1996-03-06
Applicant: NEC CORP
Inventor： SHIMURA KENICHI , BABA KAZUHIRO
Abstract: PROBLEM TO BE SOLVED: To provide a magnetic head which exhibits excellent wear resistance and sliding resistance when used for recording and reproducing of a magnetic recording medium with a high-density magnetic storage device. SOLUTION: The surface of a magnetic head spider 1 is provided with protective films consisting of an intermediate layer 2 consisting essentially of silicon and contg. carbon, nitrogen, etc., and a head amorphous carbon film 3. The contents of the carbon, nitrogen, etc., of this intermediate layer 2 is confined to >=5 to =2 to
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Patent Agency Ranking
公开(公告)号：JPH05890A
公开(公告)日：1993-01-08
申请号：JP17592891
申请日：1991-06-21
Applicant: NEC CORP
Inventor： AIKAWA YUMI , BABA KAZUHIRO
Abstract: PURPOSE:To synthesize a high-quality diamond film of a sufficient thickness in a vapor phase at a high rate of film formation. CONSTITUTION:When a thin diamond film is synthesized in a vapor phase by conventional CVD with hot filaments, hot capillaries 23 heated to >=2,000 deg.C are used in place of the filaments and hydrogen is introduced through the capillaries 23. Since hydrogen is passed through the capillaries, atomic hydrogen taking an important part in feeding active seeds such as hydrocarbon radicals to a substrate 25 at high density can efficiently be generated.
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公开(公告)号：JPH0361375A
公开(公告)日：1991-03-18
申请号：JP19762889
申请日：1989-07-28
Applicant: NEC CORP
Inventor： HOTTA KAZUAKI , SHOHATA NOBUAKI , ARAI MOTOHIRO , BABA KAZUHIRO
IPC: C30B29/04 , C23C16/27 , C23C16/50 , C23C16/515 , H01L21/205 , H01L21/31
Abstract: PURPOSE:To uniformly excite a raw gas and to improve the uniformity in the depositing rate, thickness and quality of a thin film by preionizing the raw gas with a corona discharge, etc., generated in a preionizer to generate a uniform pulse discharge. CONSTITUTION:The raw gas introduced into a discharge space 5 is preionized by the X-ray preionizer 1. A voltage is then impressed between a conductive substrate 2 also used as one of the counter electrodes and the other electrode 3 (group electrode) from a high voltage pulse power source 4. Consequently, the raw gas in the space 5 is excited to generate a pulse discharge, and a thin film is formed on the substrate 2.
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公开(公告)号：JPH01183466A
公开(公告)日：1989-07-21
申请号：JP523588
申请日：1988-01-12
Applicant: NEC CORP
Inventor： BABA KAZUHIRO
IPC: C04B35/626 , C04B35/581
Abstract: PURPOSE:To enable the production of the title sintered product of high density and thermal conductivity even at the same level of the sintering temperature for alumina by sintering a powder composition comprising ultrafine particles of AlN containing less than a specific amount of oxygen impurity and a sufficient amount of YF3 sufficient to cover all over the ultrafine particles. CONSTITUTION:Ultrafine particles of AlN which are obtained by high-frequency thermal plasma, having less than 0.1 micron average particle size and less than 10wt.% oxygen content as an impurity are combined with less than 20wt.% of YF3 as a sintering aid to prepare an AlN powder composition. Then, the powder composition is kept at a constant temperature ranging from 1150 deg.C to 1250 deg.C so that the YF3 melts to cover all over the ultrafine particles. Then, sintering is conducted over 1,400 deg.C to give the title sintered product of a high density and 100W/m.K or more thermal conductivity.
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公开(公告)号：JPS62278171A
公开(公告)日：1987-12-03
申请号：JP12268286
申请日：1986-05-27
Applicant: NEC CORP
Inventor： BABA KAZUHIRO , SHOHATA NOBUAKI
IPC: C04B35/581 , C01B21/072
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公开(公告)号：JPS62171902A
公开(公告)日：1987-07-28
申请号：JP1413386
申请日：1986-01-24
Applicant: NEC CORP
Inventor： BABA KAZUHIRO
IPC: C01B21/072
Abstract: PURPOSE:To synthesize fine AlN powder containing uniformly mixed fine Al4C3 powder having the same particle diameter, by using Ar as a gas for generating plasma and further N, H, NH3 and CH4 as reaction gases and introducing Al powder into high-frequency induction hot plasma. CONSTITUTION:A quartz plasma generation tube 2 and reaction vessel 9 are evacuated with a gas discharging device 12 and Ar gas is introduced from a gas feed inlet 4. High frequency is passed through a high-frequency coil 1 to carry out electrodeless discharge of the Ar gas and generate a plasma flame 5. When the plasma is generated, N, H, NH3 and CH4 mixed in a gas mixer 13 are introduced from a mixed gas inlet 8 into the reaction vessel 9 and metallic Al powder is simultaneously charged from a raw material feed inlet 14. The Al powder charged into the plasma is evaporated, mostly nitrided in the reaction vessel 9 and partially reacted with CH4 and converted into a carbide. The formed AlN and Al4C3 are mixed in a vapor phase state, condensed and finely powdered during transfer to a powder collecting device 10 with a gas discharging device 11. At this time, the content of the Al4C3 in the mixed fine powder is preferably adjusted to about 1.0-10wt%.
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