公开(公告)号：JPS5517461A

公开(公告)日：1980-02-06

申请号：JP9066578

申请日：1978-07-24

Applicant: SHARP KK

Inventor： YOSHIKAWA TOSHIBUMI ,  TANI YOSHIHEI ,  ASOU AKIRA ,  KAHANABE HITOSHI

IPC: G01J3/50 ,  G01J1/44 ,  G01J3/427 ,  G01J9/00 ,  G01N21/31 ,  H01L31/10

Abstract: PURPOSE:To increase the performance by using the photo semiconductor device forming a plurality of PN junctions different in the depth for a single semiconductor substrate. CONSTITUTION:The epitaxial layer 3 showing the N type conduction is provided on the P type silicon substrate 2, the P type region 4 is provided comparatively shallower in the epitaxial layer 3, the first PN junction 5 deeply located between the N type epitaxial layer 3 and the P type substrate 2 and the second PN junction 6 shallowly located between the N type epitaxial layer 3 and the P type region 4 are formed and they are taken as the first and second photo diodes PD1 and PD2, and the photo semiconductor device providing the electrodes 8 to 10, insulation film 11 and non-transparent thin film 12 is assembled with the wave length detection circuit. Further, the photo output currents IPD1 and IPD2 of the first and second photo diodes PD1 AND PD2 are introduced and inputted to the operational amplifying circuits 21 and 22, and the favorable corresponding relation between the wave length of the emitted light and the output signal can be obtained from the ratio.

公开(公告)号：JPS53127066A

公开(公告)日：1978-11-06

申请号：JP4238377

申请日：1977-04-12

Applicant: SHARP KK

Inventor： TANI YOSHIHEI ,  EBINA KIYOSHI

IPC: F23Q7/22 ,  F23Q7/10

Abstract: PURPOSE:To provide a gas ignition apparatus, wherein a large current in a pulse form is passed through a heating wire to perform instantaneous resistance heating so that gas is ignited by its pulse-like heat aurface ignition.

公开(公告)号：JPS52140736A

公开(公告)日：1977-11-24

申请号：JP5818176

申请日：1976-05-19

Applicant: SHARP KK

Inventor： NAKAMURA ISAO ,  SHIGEMASA JIYUNICHIROU ,  TANI YOSHIHEI

IPC: F02P15/10 ,  F23Q3/00 ,  H03K3/57

Abstract: PURPOSE:To generate high voltage for ignition on an ignition device of gas lighters etc., by utilizing blocking oscillation as well as to make possible confirming of oscillating state of the oscillating circuit by employing semi-conductive light emitting element.

公开(公告)号：JPS5169993A

公开(公告)日：1976-06-17

申请号：JP14391174

申请日：1974-12-13

Applicant: Sharp Kk

Inventor： TANI YOSHIHEI ,  MURATA KAZUHISA ,  SAKURAI TAKESHI

IPC: H04N3/14 ,  G09F9/33 ,  G09G3/14 ,  H01L27/146 ,  H01L33/08 ,  H01L33/20

公开(公告)号：JPS5147383A

公开(公告)日：1976-04-22

申请号：JP12169574

申请日：1974-10-21

Applicant: SHARP KK

Inventor： MURATA KAZUHISA ,  TANI YOSHIHEI ,  SAKURAI TAKESHI

IPC: H01S5/00 ,  H01S5/042

公开(公告)号：JPS5115925A

公开(公告)日：1976-02-07

申请号：JP8857274

申请日：1974-07-30

Applicant: SHARP KK

Inventor： MURATA KAZUHISA ,  TANI YOSHIHEI

IPC: H01L33/00 ,  H01L33/08 ,  H01L33/14 ,  H01L33/30 ,  H01L33/40 ,  H04N3/14 ,  H04N5/257 ,  H04N5/70

公开(公告)号：JP2002118280A

公开(公告)日：2002-04-19

申请号：JP2000305768

申请日：2000-10-05

Applicant: SHARP KK

Inventor： KASHU KAZUHIRO ,  KUBO MASARU ,  FUKUSHIMA TOSHIHIKO ,  FUKUNAGA NAOKI ,  TANI YOSHIHEI

IPC: H01L31/10

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light receiving device which has high sensitivity and high-speed responsiveness against signal light having a short wavelength. SOLUTION: This semiconductor light receiving device contains light receiving regions 7 and 8 in each of which a second conductivity type layer 5 is laminated upon first conductivity type layers 2 and 4. The portion of the layer 5 from the surface to a prescribed depth is constituted of SiGe mixed crystal layers 5 and 4. The layers 5 and 4 have thicknesses which are smaller than the thicknesses at which the quotients obtained when the light intensities at the bottom faces of the SiGe layers are divided by the light intensities at the surfaces of the SiGe layers become 0.1 and larger than the thicknesses at which the upper surfaces of depletion layers become the same levels as those of the bottom faces of the SiGe layers or higher, but do not become the same levels as those of the surfaces of the SiGe layers under the presence of a reverse bias voltage which is impressed upon the light receiving regions 7 and 8 when the light receiving device is operated.

公开(公告)号：JP2002083947A

公开(公告)日：2002-03-22

申请号：JP2000274086

申请日：2000-09-08

Applicant: SHARP KK

Inventor： TAKIMOTO TAKAHIRO ,  OKUBO ISAMU ,  KASAMATSU TOSHIMITSU ,  KUBO MASARU ,  TANI YOSHIHEI

IPC: H01L27/14 ,  H01L21/331 ,  H01L21/8222 ,  H01L27/06 ,  H01L27/144 ,  H01L29/165 ,  H01L29/73 ,  H01L29/737 ,  H01L31/10

Abstract: PROBLEM TO BE SOLVED: To provide a photodetector having a built-in circuit wherein an IC increased in operation speed by using an HBT wherein an SiGe layer is employed, and a divided photodiode can be formed on the same substrate, and also provide a method of manufacturing the same. SOLUTION: The photodetector having a built-in circuit comprises a semiconductor substrate, an IC formed on the semiconductor substrate, and a photodiode formed in the semiconductor substrate. The IC includes an SiGe layer formed at least in part of it.

公开(公告)号：JP2001192293A

公开(公告)日：2001-07-17

申请号：JP2000101104

申请日：2000-04-03

Applicant: SHARP KK

Inventor： NAKABAYASHI KEIYA ,  TANI KENTARO ,  KAWASAKI TAKASHI ,  MAKINO OSAYUKI ,  SUGA YASUO ,  TANI YOSHIHEI

IPC: C30B23/08 ,  H01L21/203

Abstract: PROBLEM TO BE SOLVED: To sufficiently secure a filling amount of a molecular beam material even when a crucible is allowed to incline and to obtain stable strength of the molecular beam even when the amount of the molecular beam material is reduced. SOLUTION: In a molecular beam source cell 101, a crucible 102 having an inlet opening part 111 and a heater 103 which is attached to the crucible 102 and heats a molecular beam material filled in the crucible 102 to generate the molecular beam by evaporation and sublimation from the inlet opening part 111 are provided. The crucible 102 mentioned above is bent between a part 108 to be filled with the molecular beam material and the inlet opening part 111 so that the molecular beam material filled in the part 108 can be seen from the inlet opening part 11, and each sectional area in the horizontal direction of the part 108 to be filled with the molecular beam material is made nearly uniform.

公开(公告)号：JPH06326365A

公开(公告)日：1994-11-25

申请号：JP11277493

申请日：1993-05-14

Applicant: SHARP KK

Inventor： OKAZAKI ATSUSHI ,  TANI YOSHIHEI ,  ABE SHIYUUZOU

IPC: H01L33/44 ,  H01L33/62 ,  H05K1/18 ,  H05K3/30 ,  H05K3/34 ,  H01L33/00

Abstract: PURPOSE:To provide the miniaturized thin type and low cost chip part type light emitting diode capable of directly packaging on the surface of wiring substrate not through the intermediary of a bonding wire. CONSTITUTION:Within the chip part type light emitting diode, the P and N type electrode 3, 4 provided on both ends of opposing chips in parallel with the P-N junction surface of a P type layer 1 and an N type layer 2 are respectively provided with solder coating layers 5, 6 on the surfaces thereof while the sides excluding both ends of the chips are provided with insulating resin coating layers on the surfaces thereof.