公开(公告)号：JP2005346954A

公开(公告)日：2005-12-15

申请号：JP2004162102

申请日：2004-05-31

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： SAKAI TADASHI ,  ONO TOMIO ,  SAKUMA HISASHI ,  YOSHIDA HIROAKI ,  SUZUKI MARIKO

IPC: H01J61/06 ,  H01J1/00 ,  H01J1/05 ,  H01J1/14 ,  H01J1/308 ,  H01J61/067 ,  H01J61/073

CPC classification number: H01J1/308 ,  H01J61/0677 ,  H01J61/0737

Abstract: PROBLEM TO BE SOLVED: To provide a first discharge electrode achieving both high-efficiency secondary electron emission and long life, as well as a discharge lamp using the same.
SOLUTION: The first discharge electrode is equipped with an electron emission layer made of a wide forbidden band-width semiconductor substrate 1. The first discharge electrode defines a convex part (a rectangular parallelepiped column) R
i, j-2 , R
i, j-1 , R
i, j with an upper end face opposing a second discharge electrode and side walls to be faces not seen from a vertical direction of the upper end face, and is equipped with the electron emission layer, in which dangling bonds on the surface of the wide forbidden band-width semiconductor substrate 1 exposed to the side walls of the rectangular parallelepiped column R
i, j-2 , R
i, j-1 , R
i, j are terminated with hydrogen 3.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 解决的问题：提供实现高效二次电子发射和长寿命的第一放电电极以及使用该放电电极的放电灯。 解决方案：第一放电电极配备有由宽禁带宽半导体衬底1制成的电子发射层。第一放电电极限定凸部（矩形平行六面体柱）R i，j- 2 ，R i，j-1 ，R SB，i，j ，上端面与第二放电电极相对， 上端面的垂直方向，并且配备有电子发射层，其中暴露于长方体柱R SB的侧壁上的宽禁带宽半导体衬底1的表面上的悬挂键 ，j-2，R i，j-1，R i，j-1，R SB，i，j，...用氢3终止。（C） JPO＆NCIPI

公开(公告)号：JP2005294005A

公开(公告)日：2005-10-20

申请号：JP2004106710

申请日：2004-03-31

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： ONO TOMIO ,  SAKAI TADASHI ,  SAKUMA HISASHI ,  SUZUKI MARIKO ,  YOSHIDA HIROAKI

IPC: H01J1/15 ,  H01J1/14 ,  H01J61/06

Abstract: PROBLEM TO BE SOLVED: To obtain a thermionic cathode and its manufacturing method with a long life and low power consumption capable of stably performing thermionic emission from an n-type diamond in a low temperature action. SOLUTION: The thermionic cathode is equipped with an n-type diamond layer as an electron emission substance on a surface of a substrate, and the n-type diamond layer includes a layer containing a transition metal element on its surface layer part. Further, a process forming the n-type diamond layer on the surface of the substrate and a process containing a transition metal element from a surface layer side of the n-type diamond layer to the surface layer part of the n-type diamond layer are included. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：为了获得能够在低温作用下从n型金刚石稳定地进行热电子发射的长寿命和低功耗的热离子阴极及其制造方法。 解决方案：热离子阴极在衬底的表面上配备作为电子发射物质的n型金刚石层，n型金刚石层在其表面层部分包含含有过渡金属元素的层。 此外，在衬底表面上形成n型金刚石层的工艺以及从n型金刚石层的表层侧到n型金刚石层的表面层的含有过渡金属元素的工艺， 包括在内。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2005260208A

公开(公告)日：2005-09-22

申请号：JP2005003370

申请日：2005-01-11

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： KAWAKUBO TAKASHI ,  OHARA RYOICHI ,  ONO TOMIO ,  NAGANO TOSHIHIKO ,  ABE KAZUHIDE ,  NISHIGAKI MICHIHIKO ,  SANO KENYA ,  YASUMOTO YASUAKI

IPC: H01L41/09 ,  H01G7/06 ,  H01L41/053 ,  H01L41/08 ,  H01L41/18 ,  H01L41/187 ,  H01L41/22 ,  H01L41/29 ,  H01L41/316

CPC classification number: H01G7/06 ,  H01H2057/006 ,  H01L41/0933 ,  H01L41/094

Abstract: PROBLEM TO BE SOLVED: To provide a thin film piezoelectric actuator having a stable structure which can be easily controlled, has a wide driving range and a low driving voltage. SOLUTION: In a thin film piezoelectric actuator of a double-clamped beam structure having a plurality of driving parts connected in a manner of reversed polarities, two or more via holes are formed perpendicularly to the driving shaft of the actuator in the piezoelectric film, and in each area of the via holes, a first upper electrode and a second lower electrode, or the second upper electrode and the first lower electrode, are overlapped and connected. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：为了提供具有可以容易地控制的稳定结构的薄膜压电致动器，具有宽的驱动范围和低的驱动电压。 解决方案：在具有以反极性连接的多个驱动部分的双夹持梁结构的薄膜压电致动器中，两个或更多个通孔垂直于致动器的驱动轴形成在压电 膜，并且在通孔的每个区域中，第一上电极和第二下电极，或第二上电极和第一下电极重叠并连接。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2004221853A

公开(公告)日：2004-08-05

申请号：JP2003005735

申请日：2003-01-14

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： ONO TOMIO ,  SAKAI TADASHI ,  SAKUMA HISASHI ,  SUZUKI MARIKO

IPC: B81B3/00 ,  H03H9/24

Abstract: PROBLEM TO BE SOLVED: To solve the problem that termination resistance becomes large by making a frequency to be high without reducing a size of a micro mechanical filter and avoiding degradation of electromechanical conversion efficiency.
SOLUTION: The filter is provided with an input resonator 71, input driving electrodes (51, 52 and 91) arranged near the input resonator 71 so that they oscillate the input resonator 71 at a high-order resonance mode, a connector 10 connected to the input resonator 71, an output resonator 72 which is connected to the connector 10 and is excited by the oscillation of the input resonator 71 and detection electrodes (53, 54 and 92) detecting the oscillation of the output resonator 72 by a change of electrostatic capacity. A microwave signal of a specified frequency is made to pass by using only the specified high-order mode of the input resonator 71.
COPYRIGHT: (C)2004,JPO&NCIPI

公开(公告)号：JP2004127605A

公开(公告)日：2004-04-22

申请号：JP2002287443

申请日：2002-09-30

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： ONO TOMIO ,  SAKAI TADASHI ,  SAKUMA HISASHI ,  SUZUKI MARIKO

IPC: B81B3/00 ,  B81C1/00 ,  C23C28/02 ,  H01H1/06 ,  H01H59/00

Abstract: PROBLEM TO BE SOLVED: To provide a microswitch with excellent reliability, operating at a low switching voltage, of which the contact is made of a material other than Au.
SOLUTION: The microswitch comprises a base board 10; a drain electrode 18 fitted on the surface of the base board 10, a gate electrode 17 and a source electrode 16 which are formed on the surface of base board 10; a first contact 15 formed on and in contact with the drain electrode 18 composed of a microbrush which is an aggregate of conductive pillars with a diameter of 10 to 100 nm aggregated with an area density of 10
9 to 10
11 /cm2; and a beam 23 of a cantilever structure having a fulcrum electrically connected to the source electrode 16 driven by an electrostatic force imposed on the gate electrode 17, having a second contact 24 facing the first contact 15 at the movable tip thereof. The first contact 15 is made of a gold-nickel alloy (Au-Ni alloy) having excellent reliability and durability, and the second contact 24 is made of tungsten (W) having excellent reliability and durability.
COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2003068592A

公开(公告)日：2003-03-07

申请号：JP2001251585

申请日：2001-08-22

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： SAKAI TADASHI ,  ONO TOMIO ,  SAKUMA HISASHI ,  SUZUKI MARIKO

IPC: H01L21/205 ,  H01L21/02 ,  H01L21/265

Abstract: PROBLEM TO BE SOLVED: To provide a high quality semiconductor epitaxial substrate while up scaling a semiconductor material producing only a small size crystal to practical size.
SOLUTION: The method for producing an epitaxial substrate comprises a step for preparing a supporting substrate 300, a step for preparing a plurality of planar crystal substrates 201-204, a step for implanting ions from one major surface of the crystal substrates 201-204 to form ion implantation layers 201c-204c, a step for pasting the plurality of crystal substrates 201-204 and the supporting substrate 300 one another, a step for separating the plurality of crystal substrates 201-204 into a plurality of thin film tiles 201a-204a bonded to the first major surface and a plurality of parent material side crystal substrates 201b-204b by heat treatment, and a step for growing a single crystal layer 301 epitaxially on the sauce of the thin film tiles 201a-204a.
COPYRIGHT: (C)2003,JPO

Abstract translation: 要解决的问题：为了提供高质量的半导体外延基板，同时将仅生产小尺寸晶体的半导体材料缩放至实际尺寸。 解决方案：用于制造外延衬底的方法包括制备支撑衬底300的步骤，制备多个平面晶体衬底201-204的步骤，将离子从晶体衬底201-204的一个主表面注入到 形成离子注入层201c-204c，将多个晶体基板201〜204以及支撑基板300粘贴的工序，将多个晶体基板201〜204分离成多个薄膜瓦201a〜204a 通过热处理结合到第一主表面和多个母材侧晶体基板201b-204b，以及在薄膜瓦片201a-204a的酱汁上外延生长单晶层301的步骤。

公开(公告)号：JP2002150921A

公开(公告)日：2002-05-24

申请号：JP2000339481

申请日：2000-11-07

Applicant: TOSHIBA CORP

Inventor： SAKAI TADASHI ,  ONO TOMIO ,  CHO TOSHI ,  SAKUMA HISASHI

IPC: H01J29/04 ,  H01J1/304 ,  H01J19/24 ,  H01J21/10 ,  H01J31/12

Abstract: PROBLEM TO BE SOLVED: To provide a field emission type cold cathode that will function, even if defective elements exist partially. SOLUTION: In the field emission type cathode that is comprised of an emitter array in which emitters 3 are arranged on the two dimensional face, a laminate 4 that covers the above emitter array be exposing the top end of the emitters 3, and a gate electrode layer 7 that is formed on the laminated 4, so as to surround each top end part of the emitters 3, the gate electrode layers 7 are connected to each other by a fuse electrode layer 8 that is blown out by the heat of short-circuit current.

公开(公告)号：JP2001185018A

公开(公告)日：2001-07-06

申请号：JP36707399

申请日：1999-12-24

Applicant: TOSHIBA CORP

Inventor： ONO TOMIO ,  SAKAI TADASHI ,  SAKUMA HISASHI ,  CHO TOSHI

IPC: H01J9/02 ,  H01J1/304

Abstract: PROBLEM TO BE SOLVED: To provide an electron emission element having a small potential drop and electron emission of a lower threshold value and a method of manufacturing the same. SOLUTION: At outer periphery of an emitter of which a sharpened tip consists of carbonaceous electron emission substance such as diamond 16 or the like of convex shape 19, a thin conductive layer 15 is installed to expose the tip of the emitter.

公开(公告)号：JP2001176377A

公开(公告)日：2001-06-29

申请号：JP36159799

申请日：1999-12-20

Applicant: TOSHIBA CORP

Inventor： SAKUMA HISASHI ,  ONO TOMIO ,  SAKAI TADASHI ,  CHO TOSHI

IPC: H01J9/02 ,  H01J1/304

Abstract: PROBLEM TO BE SOLVED: To facilitate impurity diffusion or doping into diamond and to increase a doping effect. SOLUTION: Into a supporting substrate, for example Si substrate 101 to make up diamond, a high-concentration boron is diffused by using an ion- implanting technology. Or, phosphorus is diffused into another area. By forming diamond 106 by the supporting substrate into which impurities have been diffused, diffusion of the impurities from the supporting substrate occurs in the initial process of the formation. This technology facilitates the diffusion of impurities into diamond 106, and enables to make up diffusion areas of many kinds of diffusion areas of impurities on the same surface.

公开(公告)号：JP2000277000A

公开(公告)日：2000-10-06

申请号：JP8189399

申请日：1999-03-25

Applicant: TOSHIBA CORP

Inventor： ONO TOMIO ,  SAKAI TADASHI ,  NAKAYAMA KAZUYA ,  CHO TOSHI

IPC: H01J1/304 ,  H01J9/02

Abstract: PROBLEM TO BE SOLVED: To easily emit electrons and resolve a problem of a high operating voltage by forming a projection, which is sharpened at the tip and is made of a carbonic electron emitting material, on top of a lug formed on a conductive structural substrate. SOLUTION: A thermal oxidation SiO2 layer 24 is formed on an n-type Si substrate 21 by dry oxidation, resist 28 is applied on it by spin coating, patterning such as exposure and development is applied, and the thermal oxidation SiO2 layer 24 is etched by an NH4/HF mixed aqueous solution to form a mask 22. The thermal oxidation SiO2 layer 24 is removed by etching, and a projection 25 of a carbonic electron emitting material is selectively grown only on top of a lug 23 by a hot filament CVD method. A SiO2 layer 26 as an insulating layer and a Mo layer 27 as a gate layer are formed, the resist 28 is applied, and the tip of an emitter is exposed by ashing. The projection 25 is exposed, the resist 28 is removed, and the gated emitter coated with the carbonic electron emitting material is obtained.