MICROELECTROMECHANICAL POSITIONING APPARATUS
    71.
    发明申请
    MICROELECTROMECHANICAL POSITIONING APPARATUS 审中-公开
    微电子机械定位器

    公开(公告)号:WO99024783A1

    公开(公告)日:1999-05-20

    申请号:PCT/US1998/023588

    申请日:1998-11-05

    Abstract: A microelectromechanical (MEMS) positioning apparatus is provided that can precisely microposition an object in each of the X, Y and Z directions. The MEMS positioning apparatus includes a reference surface, a support disposed in a fixed position to the reference surface, and a stage defining a XY plane that is suspended adjacent to the support and over at least a portion of the reference surface. The MEMS positioning apparatus also includes at least one and, more typically, several actuators for precisely positioning the stage and, in turn, objects carried by the stage. For example, the MEMS positioning apparatus can include first and second MEMS actuators for moving the stage in the XY plane upon actuation. In addition, the MEMS positioning apparatus can include a Z actuator, such as a thermal bimorph structure, for moving the stage in the Z direction.

    Abstract translation: 本发明涉及微机电定位器(MEMS),其能够根据轴线X精确地定位的物体,Y和Z.该定位器包括一个基准表面,布置在相对于所述基准表面的固定位置的支撑件,和 限定沿着X和Y的平面的板,悬置在支撑件上并且在参考表面的至少一部分上方。 该微机电定位器还包括至少一个致动器,但更一般地包括多个用于精确定位板的致动器,并因此包括由板承载的物体。 因此,微机电定位器可包括第一和第二致动器确保板的翻译根据X和Y此外,微机电定位器可以根据Z,如用于移动板的热生物形态的结构包括致动器 沿着Z轴。

    ARRAY OF THIN FILM ACTUATED MIRRORS AND METHOD FOR THE MANUFACTURE THEREOF
    72.
    发明申请
    ARRAY OF THIN FILM ACTUATED MIRRORS AND METHOD FOR THE MANUFACTURE THEREOF 审中-公开
    薄膜致动镜的阵列及其制造方法

    公开(公告)号:WO1996015630A1

    公开(公告)日:1996-05-23

    申请号:PCT/KR1995000133

    申请日:1995-10-17

    Abstract: An array (100) of M x N thin film actuated mirrors (101) includes an active matrix (120) having a substrate with an array of M x N connecting terminals (124) and an array of M x N transistors, and an array of M x N actuating structures (111), wherein each of the actuating structures (111) being a bimorph structure, includes a second thin film electrode (165), a lower electrodisplacive member (185), an intermediate thin film electrode (135), an upper electrodisplacive member (175) and a first thin film electrode (155). Furthermore, there is disclosed a method for the manufacture thereof, the method comprising the steps of: providing an active matrix; forming a thin film sacrificial layer on top of the active matrix; removing selectively the thin film sacrificial layer; forming a second thin film electrode layer thereon; removing selectively the second thin film electrode layer; depositing a lower electrodisplacive layer; forming an intermediate electrode layer; depositing an upper electrodisplacive layer; forming a first thin film electrode layer; thereby forming a multiple layered structure; patterning the multiple layered structure into an array of M x N semifinished actuating structures; and removing the thin film sacrificial layer.

    Abstract translation: M×N薄膜致动反射镜(101)的阵列(100)包括有源矩阵(120),该有源矩阵(120)具有带有M×N个连接端子(124)和M×N个晶体管阵列的阵列的基板,以及阵列 的多个M x N致动结构(111),其中每个致动结构(111)是双压电晶片结构,包括第二薄膜电极(165),下部电致位移元件(185),中间薄膜电极(135) ,上部电致位移元件(175)和第一薄膜电极(155)。 此外,公开了一种制造方法,该方法包括以下步骤:提供有源矩阵; 在有源矩阵的顶部形成薄膜牺牲层; 选择性地去除薄膜牺牲层; 在其上形成第二薄膜电极层; 选择性地去除第二薄膜电极层; 沉积较低的电致位移层; 形成中间电极层; 沉积上部电致位移层; 形成第一薄膜电极层; 从而形成多层结构; 将多层结构图案化成M×N半成品致动结构的阵列; 并去除薄膜牺牲层。

    마이크로기계 장치
    76.
    发明公开
    마이크로기계 장치 无效
    微生物装置

    公开(公告)号:KR1020010050327A

    公开(公告)日:2001-06-15

    申请号:KR1020000051999

    申请日:2000-09-04

    Abstract: PURPOSE: A micromechanical device is provided to reduce the assembly-related strains, stress and associated temperature-induced variations of the overall device, thus simplifying the evaluation electronics of the device. CONSTITUTION: A pedestal structure and its fabrication method provide a stress release assembly of micromechanical sensors, in particular acceleration sensors, angular rate sensors, inclination sensors or angular acceleration sensors. At least one silicon seismic mass(32) is used as sensing element. The at least one silicon seismic mass(32) is joined to the silicon frame via at least one elongate assembly pedestal, the surface of which is bonded to a covering wafer, either glass or silicon. Signals may be transmitted via buried conductors in the pedestal. The bonding area is reduced by shallow transversal recesses in the surface of the pedestal.

    Abstract translation: 目的:提供一种微机械装置,以减少与装置有关的应变,应力和相关温度引起的整个装置的变化,从而简化了装置的评估电子装置。 构造:基座结构及其制造方法提供微机械传感器的应力释放组件,特别是加速度传感器,角速度传感器,倾斜传感器或角加速度传感器。 至少有一个硅质量块(32)用作传感元件。 所述至少一个硅抗震块(32)经由至少一个细长的组件基座接合到所述硅框架,所述细长组件基座的表面与玻璃或硅的覆盖晶片结合。 信号可以通过基座中的埋地导体传输。 接合区域由底座表面的浅横向凹槽减少。

    Polymer Linear Actuator for Micro Electric Mechanical System and Micro Manipulator for Measurement Device of Brain Signal using The same
    79.
    发明授权
    Polymer Linear Actuator for Micro Electric Mechanical System and Micro Manipulator for Measurement Device of Brain Signal using The same 无效
    用于微机电系统的聚合物线性致动器和用于使用其的脑信号测量装置的微机械手

    公开(公告)号:KR100767723B1

    公开(公告)日:2007-10-18

    申请号:KR20060028250

    申请日:2006-03-29

    CPC classification number: B81B3/0024 B81B2201/032 B81B2203/051 Y10S310/80

    Abstract: 본 발명은 MEMS용 폴리머 선형 엑츄에이터 및 이를 이용한 뇌 신경신호 측정장치의 마이크로 매니퓰레이터에 관한 것이다. 본 발명에 따른 폴리머 선형 엑츄에이터는 소정간격 이격되어 위치하는 제1 및 제2 몸체부와, 상기 제1 및 제2 몸체부를 서로 연결하는 한 쌍 이상의 V자형의 구동 유닛을 포함하고, 상기 한 쌍을 형성하는 각 구동 유닛은 서로 대향하도록 배치되어, 각 구동 유닛의 회전 운동을 선형운동으로 변화시켜 상기 제1 및 제2 몸체부가 선형 운동하는 것을 특징으로 한다.
    MEMS, 폴리머, 선형 엑츄에이터, 엑츄에이터

    광로 조절 장치의 제조 방법
    80.
    发明公开
    광로 조절 장치의 제조 방법 无效
    光路控制装置的制造方法

    公开(公告)号:KR1019960018646A

    公开(公告)日:1996-06-17

    申请号:KR1019940029763

    申请日:1994-11-14

    Inventor: 민용기

    Abstract: 본발명은광로조절장치의제조방법에관한것으로, 액티브매트릭스기판(50)상에희생층(62)을형성하고, 그희생층에서상기액티브매트릭스기판상의신호전극패드(42) 부분에대응하는상기희생층의부분을제거한다음전체면상에하부전극(52)을적층하며, 상기전체면상에변형재료로서의압전재료를사용하는제1변형부(54)를적층하고, 상기신호전극패드(42) 부분상에서상기압전재료와하부전극및 상기매트릭스기판(50)을제거하여상기신호전극패드를노츨시키며, 상기노출된신호전극패드(42)와전기적으로접속되도록금속제의중간전극(56)을형성하고, 그중간전극상에상기제1변형부와동일한재료의제2변형부(58)를형성하며, 그제2변형부(58)상에상기하부전극과전기적으로접속되면서반사막으로작용하는상부전극(60)을형성하고, 화소간분리를위한화소패더닝공정을행하여상기희생층(62)을제거하는단계에의해상기제1변형부와제2변형부는 ZnO로형성됨과더블어상기중간전국(56)은상기신호전극패드(42)와접속된신호전극으로작용하는광로조절장치를제조함으로써고온의열처리공정을배제한것이다.

    Abstract translation: 涉及在本发明的银矿制造的控制装置,在有源矩阵基板50上,以形成牺牲层62,在所述牺牲层的有源矩阵基板上的相应信号电极垫42部分的方法, 和下部电极52层压到下一个整表面,以去除在整个表面上使用压电材料作为可变形材料的牺牲层,信号电极垫42被层压到第一修正部54,及部分的部分 上sikimyeo去除压电材料和下部电极和矩阵基板50 nocheul信号电极垫,以及形成在信号电极垫42露出的误传术语中间电极56,以进行连接到金属的, 形成第一修改单元的与中间电极相同的材料,并且,前天第二变形部58与上部电极(60用作反射膜的第二变形部58连接到下电极和所述电相位 )它被形成,并进行像素大号deoning处理像素之间的间隔 这通过去除62 deobeuleo充当连接到该组牺牲层中间的国家56 eunsanggi信号电极垫42的信号电极和所述第一变换单元的ZnO和第二变换单元的形成光路控制 通过使该装置以排除高温的热处理。

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