公开(公告)号：EP1639411A1

公开(公告)日：2006-03-29

申请号：EP04743806.4

申请日：2004-06-22

Applicant: CONSIGLIO NAZIONALE DELLE RICERCHE INFM ISTITUTO NAZIONALE PER LA FISICA DELLA MATERIA

Inventor： TORMEN, Massimo

IPC: G03F7/00 ,  B29C45/73 ,  B82B3/00

CPC classification number: G03F7/0002 ,  B29C33/02 ,  B81C99/0085 ,  B81C2201/0153 ,  B81C2201/036 ,  B82Y10/00 ,  B82Y40/00

Abstract: A lithographic process for forming a pattern in relief (20) on a mass (10) of polymeric material comprises the steps of: preparing the mass (10) of polymeric material and a die (12) having a surface region (14) facing towards the mass (10) of polymeric material and which reproduces in negative the pattern in relief (20); heating the die (12) and putting the mass (10) of polymeric material into contact with the die (12) in any temporal sequence, in such a way that the part of the mass (10) of polymeric material in contact with the surface zone (14) is subject to softening; and separating the die (12) from the mass (10) of polymeric material on the surface of which the pattern in relief (20) has been formed. The heating of at least one part of the die (12) is obtained by generation of thermal energy upon dissipation of another form of energy in at leats one region (16) of the die (12).

公开(公告)号：EP3238231A1

公开(公告)日：2017-11-01

申请号：EP15817367.4

申请日：2015-12-22

Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Inventor： LANDIS, Stéphan ,  POSSEME, Nicolas ,  BARNOLA, Sébastien ,  DAVID, Thibaut ,  NOURI, Lamia

IPC: H01L21/306 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/311 ,  H01L31/0236 ,  H01L33/00 ,  G03F7/00 ,  B81C1/00

CPC classification number: H01L21/266 ,  B81C1/00103 ,  B81C1/0046 ,  B81C1/00587 ,  B81C2201/0136 ,  B81C2201/0153 ,  B82Y10/00 ,  B82Y40/00 ,  C23C14/042 ,  C23C14/48 ,  G03F7/0002 ,  H01L21/30604 ,  H01L21/30608 ,  H01L21/3065 ,  H01L21/3086 ,  H01L21/31111 ,  H01L21/31144 ,  H01L31/02363 ,  H01L31/0392 ,  H01L31/1852 ,  H01L33/007 ,  H01L33/20 ,  H01L33/22 ,  Y02E10/50

Abstract: The invention relates, in particular, to a method for producing subsequent patterns in an underlying layer (120), the method comprising at least a step of producing previous patterns in a printable layer (110) overlying the underlying layer (120), the production of the previous patterns comprising the nanoimprinting of the printable layer (110) and leaving in place a continuous layer formed by the printable layer (110) and covering the underlying layer (120), characterised in that it comprises the following step: at least one step of modifying the underlying layer (120) by ion implantation (421) in the underlying layer (120), the implantation (421) being carried out through the printable layer (110) comprising the subsequent patterns, the implantation (421) parameters being chosen so as to form, in the underlying layer (120), implanted areas (122) and non-implanted areas, the non-implanted areas defining the subsequent patterns and having a geometry that is dependent on the previous patterns.

公开(公告)号：EP2758999A1

公开(公告)日：2014-07-30

申请号：EP12833705.2

申请日：2012-09-22

Applicant: 1366 Technologies Inc.

Inventor： SACHS, Emanuel, M

IPC: H01L31/18

CPC classification number: H01L31/18 ,  B29C33/40 ,  B29C33/42 ,  B29C33/424 ,  B29C43/021 ,  B29C2033/426 ,  B29C2043/025 ,  B29C2059/023 ,  B81C99/0085 ,  B81C2201/0153 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

Abstract: A method for imparting a pattern to a flowable resist material on a substrate entails providing a resist layer so thin that during a stamp wedging process, the resist never completely fills the space between the substrate and the bottom surface of a stamp between wedge protrusions, leaving gap everywhere therebetween. A gap remains between the resist and the extended surface of the stamp. If the resist layer as deposited is somewhat thicker than the targeted amount, it will simply result in a smaller gap between resist and tool. The presence of a continuous gap assures that no pressure builds under the stamp. Thus, the force on the protrusions i determined only by the pressure above the stamp and is well controlled, resulting in well-controlled hole sizes. The gap prevents resist from being pumped entirely out of any one region, and thus prevents any regions from being uncovered of resist. The stamp can be pulsed in its contact with the substrate, repeatedly deforming the indenting protrusions. Several pulses clears away any scum layer better than does a single press, as measured by an etch test comparison of the degree to which a normal etch for a normal duration etches away substrate material. A method for imparting a pattern to a flowable resist material on a substrate entails providing a resist layer so thin that during a stamp wedging process, the resist never completely fills the space between the substrate and the bottom surface of a stamp between wedge protrusions, leaving a gap everywhere therebetween. A gap remains between the resist and the extended surface of the stamp.

公开(公告)号：EP2360114B1

公开(公告)日：2012-12-12

申请号：EP10153537.5

申请日：2010-02-12

Applicant: Consejo Superior De Investigaciones Científicas ,  Helmholtz-Zentrum Berlin für Materialien und Energie GmbH

Inventor： Esquivel Bojorquez, Juan Pablo ,  Senn, Tobias ,  Lörgen, Marcus ,  Sabaté Vizcarra, Neus ,  Cané Ballart, Carles

IPC: B81C99/00 ,  H01M8/00 ,  B81C1/00 ,  B01J19/00

CPC classification number: B81C99/009 ,  B81B2201/051 ,  B81C1/00206 ,  B81C2201/0153 ,  B81C2201/034 ,  H01M8/0258 ,  H01M8/04164 ,  H01M2008/1095

公开(公告)号：EP1986949A1

公开(公告)日：2008-11-05

申请号：EP07700086.7

申请日：2007-01-24

Applicant: Mycrolab P/L

Inventor： ATKIN, Micah, James

IPC: B81B1/00 ,  B81C1/00

CPC classification number: B01L3/502707 ,  B01L2200/12 ,  B01L2300/0816 ,  B01L2300/0887 ,  B29C59/022 ,  B32B38/00 ,  B32B38/0008 ,  B32B38/162 ,  B32B39/00 ,  B32B2038/1891 ,  B32B2310/0831 ,  B32B2310/14 ,  B32B2425/00 ,  B32B2457/08 ,  B81C1/0046 ,  B81C2201/0153

Abstract: A method of forming a stamped feature (P) on a substrate (S) includes: applying a plurality of stamping tool segments (32, 40a, 40b, 40c, 50, 60, 70, 80, 92) to at least one surface of the substrate. An arrangement (30, 90) for forming a stamped feature (P) on a substrate (S) includes a plurality of stamping tool segments (32, 40a, 40b, 40c, 50, 60, 70, 80, 92) that actuatable individually, in concert in groups of more than one, or combinations thereof.

公开(公告)号：EP1484644A3

公开(公告)日：2006-04-12

申请号：EP04252735.8

申请日：2004-05-12

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： Kornilovich, Pavel ,  Chen, Yong ,  Stewart, Duncan ,  Williams, Stanley R. ,  Kuekes, Philip J. ,  Yanik, Mehmet Fatih

IPC: G03F7/00

CPC classification number: H01L21/76838 ,  B81C99/009 ,  B81C2201/0153 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

Abstract: A mould (110) with a protruding pattern (110a, 110b) is provided that is pressed into a thin polymer film (112, 312) via an imprinting process. Controlled connections between nanowires (118, 318) and microwires (116, 316) and other lithographically-made elements of electronic circuitry are provided. An imprint stamp is configured to form arrays of approximately parallel nanowires which have (1) micro dimensions in the X direction, (2) nano dimensions and nano spacing in the Y direction, and three or more distinct heights (12a, 12b, 12c) in the Z direction. The stamp thus formed can be used to connect specific individual nanowires (118, 318) to specific microscopic regions of microscopic wires (116, 316) or pads. The protruding pattern (110a, 110b) in the mould (110) creates recesses (112a, 112b) in the thin polymer film (112, 312), so the polymer layer acquires the reverse of the pattern on the mould (110). After the mould (110) is removed, the film is processed such that the polymer pattern can be transferred on a metal/semiconductor pattern on the substrate (114, 314).

公开(公告)号：EP1484644A2

公开(公告)日：2004-12-08

申请号：EP04252735.8

申请日：2004-05-12

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： Kornilovich, Pavel ,  Chen, Yong ,  Stewart, Duncan ,  Williams, Stanley R. ,  Kuekes, Philip J. ,  Yanik, Mehmet Fatih

IPC: G03F7/00

CPC classification number: H01L21/76838 ,  B81C99/009 ,  B81C2201/0153 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

Abstract: A mould (110) with a protruding pattern (110a, 110b) is provided that is pressed into a thin polymer film (112, 312) via an imprinting process. Controlled connections between nanowires (118, 318) and microwires (116, 316) and other lithographically-made elements of electronic circuitry are provided. An imprint stamp is configured to form arrays of approximately parallel nanowires which have (1) micro dimensions in the X direction, (2) nano dimensions and nano spacing in the Y direction, and three or more distinct heights (12a, 12b, 12c) in the Z direction. The stamp thus formed can be used to connect specific individual nanowires (118, 318) to specific microscopic regions of microscopic wires (116, 316) or pads. The protruding pattern (110a, 110b) in the mould (110) creates recesses (112a, 112b) in the thin polymer film (112, 312), so the polymer layer acquires the reverse of the pattern on the mould (110). After the mould (110) is removed, the film is processed such that the polymer pattern can be transferred on a metal/semiconductor pattern on the substrate (114, 314).

Abstract translation: 提供具有突出图案（110a，110b）的模具（110），其通过压印工艺压入薄聚合物膜（112,312）中。 提供了纳米线（118,318）和微线（116,316）之间的控制连接以及电子电路的其它光刻制造的元件。 打印印记被配置为形成大致平行的纳米线的阵列，其具有（1）在X方向上的微尺寸，（2）在Y方向上的纳米尺寸和纳米间隔，以及三个或更多个不同的高度（12a，12b，12c） 在Z方向。 如此形成的印章可用于将特定的单个纳米线（118,318）连接到微细线（116,316）或垫的特定微观区域。 模具（110）中的突出图案（110a，110b）在聚合物薄膜（112,312）中形成凹部（112a，112b），因此聚合物层获得模具（110）上图案的相反。 在除去模具（110）之后，对膜进行处理，使得聚合物图案可以转移到衬底（114,314）上的金属/半导体图案上。

公开(公告)号：EP3238232A1

公开(公告)日：2017-11-01

申请号：EP15820157.4

申请日：2015-12-22

Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Inventor： LANDIS, Stéphan ,  POSSEME, Nicolas ,  NOURI, Lamia

IPC: H01L21/306 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/311 ,  H01L31/0236 ,  H01L33/00 ,  G03F7/00 ,  B81C1/00

CPC classification number: H01L21/266 ,  B81C1/00103 ,  B81C1/0046 ,  B81C1/00587 ,  B81C2201/0136 ,  B81C2201/0153 ,  B82Y10/00 ,  B82Y40/00 ,  C23C14/042 ,  C23C14/48 ,  G03F7/0002 ,  H01L21/30604 ,  H01L21/30608 ,  H01L21/3065 ,  H01L21/3086 ,  H01L21/31111 ,  H01L21/31144 ,  H01L31/02363 ,  H01L31/0392 ,  H01L31/1852 ,  H01L33/007 ,  H01L33/20 ,  H01L33/22 ,  Y02E10/50

Abstract: The invention relates, in particular, to a method for producing subsequent patterns in an underlying layer (120), the method comprising at least a step of producing previous patterns in a printable layer (110) overlying the underlying layer (120), the production of the previous patterns comprising the nanoimprinting of the printable layer (110) and leaving in place a continuous layer formed by the printable layer (110) and covering the underlying layer (120), characterised in that it comprises the following step: at least one step of modifying the underlying layer (120) by ion implantation (421) in the underlying layer (120), the implantation (421) being carried out through the printable layer (110) comprising the subsequent patterns, the implantation (421) parameters being chosen so as to form, in the underlying layer (120), implanted areas (122) and non-implanted areas, the non-implanted areas defining the subsequent patterns and having a geometry that is dependent on the previous patterns.

Abstract translation: 本发明尤其涉及一种用于在底层（120）中产生随后的图案的方法，所述方法至少包括在覆盖下层（120）的可印刷层（110）中产生先前图案的步骤，所述产品 所述先前图案包括可印刷层（110）的纳米压印并留下由可印刷层（110）形成并覆盖下层（120）的连续层，其特征在于其包括以下步骤：至少一个 通过在所述下层（120）中的离子注入（421）来修改所述下层（120）的步骤，所述注入（421）通过包括所述后续图案的可印刷层（110）来执行，所述注入 以便在下层（120）中形成注入区域（122）和非注入区域，非注入区域限定后续图案并且具有依赖于前面的图案的几何形状 tterns。

公开(公告)号：EP3038974A4

公开(公告)日：2017-07-26

申请号：EP14839979

申请日：2014-08-26

Applicant: SILEX MICROSYSTEMS AB

Inventor： KÄLVESTEN EDVARD ,  EBEFORS THORBJÖRN ,  SVEDIN NIKLAS

IPC: B81B7/00 ,  B81C1/00 ,  H01L21/50 ,  H01L23/00 ,  H01L23/08 ,  H01L23/48

CPC classification number: B81B7/007 ,  B81B2201/01 ,  B81B2201/0264 ,  B81B2201/0271 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81B2207/095 ,  B81C1/00301 ,  B81C2201/0153 ,  B81C2201/036 ,  B81C2203/0109 ,  B81C2203/0145 ,  H01L21/50 ,  H01L23/08 ,  H01L24/94 ,  H01L2924/16235

公开(公告)号：EP2514714A1

公开(公告)日：2012-10-24

申请号：EP12176538.2

申请日：2007-01-18

Applicant: Hitachi Ltd.

Inventor： Murao, Kenji ,  Kuwabara, Kosuke ,  Ogino, Masahiko

IPC: B81C1/00

CPC classification number: B81C1/0046 ,  B29C43/021 ,  B29C2043/025 ,  B81B2201/0214 ,  B81B2203/0361 ,  B81C2201/0153 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y40/00 ,  G03F7/0002

Abstract: The invention provides a micro- and nano-structure which have indentation/protrusion structures on a surface of a substrate (1), wherein the protrusions or indentations have at least two layer structure, cross-sections of which are exposed to the outside, and the outermost layer (3; 10) of the layered structure and at least one layer below the outermost layer (3; 10) have different chemical or physical properties from each other.

Abstract translation: 本发明提供一种微米和纳米结构，其在基底（1）的表面上具有压痕/凸起结构，其中所述凸起或压痕具有至少两个层结构，其横截面暴露于外部，以及 层状结构的最外层（3; 10）和位于最外层（3; 10）下方的至少一层具有彼此不同的化学或物理性质。