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    Rf output coupling system using plural radio frequency (rf) output element to control plasma characteristic
    78.
    发明专利
    Rf output coupling system using plural radio frequency (rf) output element to control plasma characteristic 审中-公开
    使用无源射频（RF）输出元件控制等离子体特性的射频输出耦合系统

    公开(公告)号：JP2013105750A

    公开(公告)日：2013-05-30

    申请号：JP2012252396

    申请日：2012-11-16

    Applicant: Tokyo Electron Ltd ,  東京エレクトロン株式会社

    Inventor： BURTON LANE ,  CHEN LEE ,  PETER L G VENTZEK ,  FUNK MERRITT ,  ZHAO JIANPING ,  SUNDARARAJAN RADHA

    IPC: H05H1/46

    CPC classification number: H01J1/00 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32174 ,  H05H1/46 ,  H05H2001/4652 ,  H05H2001/4675

    Abstract: PROBLEM TO BE SOLVED: To meet the need in a radio frequency (RF) plasma processing system that there should be an improved device and method to improve the uniformity of RF energy.SOLUTION: A radio frequency (RF) output coupling system is provided. The system includes: an RF electrode which couples RF output to a plasma in a plasma processing system; a plurality of output coupling elements which electrically couple RF output at a plurality of output coupling positions on the RF electrode; and an RF output system, combined with the plurality of output coupling elements, which couples an RF output signal to each of the plurality of output coupling elements. The plurality of output coupling elements include a center element located at center of the FR electrode and peripheral elements disposed at positions off the center of the RF electrode. A first peripheral RF output signal differs in phase from a second peripheral RF output signal.

    Abstract translation: 要解决的问题：为了满足射频（RF）等离子体处理系统的需要，应该有改进的装置和方法来改善RF能量的均匀性。 解决方案：提供射频（RF）输出耦合系统。 该系统包括：在等离子体处理系统中将RF输出耦合到等离子体的RF电极; 多个输出耦合元件，其在RF电极上的多个输出耦合位置处电耦合RF输出; 以及与多个输出耦合元件组合的RF输出系统，其将RF输出信号耦合到多个输出耦合元件中的每一个。 多个输出耦合元件包括位于FR电极中心的中心元件和设置在离开RF电极中心位置的外围元件。 第一外围RF输出信号的相位与第二外围RF输出信号不同。 版权所有（C）2013，JPO＆INPIT

    Activated gas injector, film deposition apparatus, and film deposition method
    79.
    发明专利
    Activated gas injector, film deposition apparatus, and film deposition method 有权
    活性气体注射器，膜沉积装置和膜沉积方法

    公开(公告)号：JP2010239103A

    公开(公告)日：2010-10-21

    申请号：JP2009172948

    申请日：2009-07-24

    Applicant: Tokyo Electron Ltd ,  東京エレクトロン株式会社

    Inventor： KATO HISASHI ,  TAKEUCHI YASUSHI ,  USHIKUBO SHIGEHIRO ,  KIKUCHI HIROYUKI

    IPC: H01L21/31 ,  C23C16/455 ,  C23C16/50

    CPC classification number: H01J37/32559 ,  C23C16/452 ,  C23C16/45517 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/45578 ,  C23C16/4584 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  C23C16/5093 ,  H01J1/00 ,  H01J37/3244 ,  H01J37/32449

    Abstract: PROBLEM TO BE SOLVED: To provide an activated gas injector which can supply evenly-activated treatment gas, and to provide a film deposition apparatus provided with the injector. SOLUTION: The activated gas injector 32 includes: a flow passage defining member 321 partitioned into a gas activation chamber 323 and a gas introduction chamber 322 and communicating these spaces 323, 322 with each other; a gas introduction port 39 through which treatment gas is introduced into the gas introduction chamber 322; a pair of electrodes 36a, 36b to be supplied with electrical power to activate the treatment gas, wherein the electrodes extend parallel to each other in the gas activation chamber 323; and a gas discharge port provided along a longitudinal direction of the electrodes 36a, 36b in order to discharge gas activated in the gas activation chamber 323. COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种可以提供均匀活化的处理气体的活性气体喷射器，并提供一种设置有喷射器的成膜装置。 活性气体注入器32包括：分隔成气体活化室323和气体导入室322并将这些空间323,322彼此连通的流路限定构件321; 气体导入口39，其中处理气体通过该气体导入口导入气体导入室322; 一对电极36a，36b被供电以激活处理气体，其中电极在气体活化室323中彼此平行延伸; 以及沿着电极36a，36b的纵向方向设置的气体排出口，以排出在气体活化室323中活化的气体。版权所有（C）2011，JPO＆INPIT

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