Electron-beam generating apparatus and image forming apparatus using electron-beam generating apparatus
    71.
    发明公开
    Electron-beam generating apparatus and image forming apparatus using electron-beam generating apparatus 失效
    采用这种电子束发生装置的电子束发生装置和图象形成设备

    公开(公告)号:EP0725420A3

    公开(公告)日:1996-12-04

    申请号:EP96300688.7

    申请日:1996-01-31

    Abstract: An image forming apparatus using an electron source which has matrix-wired electron-emitting devices connected with wiring electrodes of conductive material, and a fluorescent member as an image forming member with an accelerating electrode on its inner surface side, opposite to the electron-emitting devices. The wiring electrodes includes a wiring electrode where a semiconductive support member (spacer) is provided via a conductive connection member and a wiring electrode where the semiconductive support member is not provided. The height of the upper surface of the conductive connection member on which the semiconductive support member is provided and that of the upper surface of the wiring electrode where the semiconductive support member is not provided are the same, to prevent shift of electron-beam trajectories around the semiconductive support member, due to disturbance of electric-field distribution.

    다레벨 전도성 블랙 매트릭스
    74.
    发明授权
    다레벨 전도성 블랙 매트릭스 失效
    多级导电黑矩阵

    公开(公告)号:KR100357684B1

    公开(公告)日:2002-10-25

    申请号:KR1019997008910

    申请日:1998-03-24

    Inventor: 드럼폴엠.

    CPC classification number: H01J9/242 H01J29/085 H01J2201/025 H01J2329/00

    Abstract: 평면패널디스플레이소자의페이스플레이트(104)상의서브화소의행(106,108) 및열(110-122)을분리하는다레벨전도성매트릭스구조가개시된다. 상기매트릭스구조는평행하게떨어져있고높이를갖는다수의제 1 전도성리지들을가지며, 상기다수의제 1 리지들의높이보다높은높이를가진평행하게떨어져있는다수의제 2 전도성리지를포함하고, 상기제 2 전도성리지들의높이는상기제 1 및제 2 전도성리지들의교차부에서상기제 1 전도성리지의높이로감소된다.

    다레벨 전도성 블랙 매트릭스
    78.
    发明公开
    다레벨 전도성 블랙 매트릭스 失效
    多层导电黑色矩阵

    公开(公告)号:KR1020010005836A

    公开(公告)日:2001-01-15

    申请号:KR1019997008910

    申请日:1998-03-24

    Inventor: 드럼폴엠.

    CPC classification number: H01J9/242 H01J29/085 H01J2201/025 H01J2329/00

    Abstract: 평면패널디스플레이소자의페이스플레이트(104)상의서브화소의행(106,108) 및열(110-122)을분리하는다레벨전도성매트릭스구조가개시된다. 상기매트릭스구조는평행하게떨어져있고높이를갖는다수의제 1 전도성리지들을가지며, 상기다수의제 1 리지들의높이보다높은높이를가진평행하게떨어져있는다수의제 2 전도성리지를포함하고, 상기제 2 전도성리지들의높이는상기제 1 및제 2 전도성리지들의교차부에서상기제 1 전도성리지의높이로감소된다.

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