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    MAKING AN APPARATUS WITH PLANAR-TYPE RESISTORS
    71.
    发明申请
    MAKING AN APPARATUS WITH PLANAR-TYPE RESISTORS 审中-公开
    用平面电阻制造设备

    公开(公告)号：WO98034265A1

    公开(公告)日：1998-08-06

    申请号：PCT/RU1998/000026

    申请日：1998-02-03

    IPC: H01J9/02

    CPC classification number: H01J9/025 ,  H01J2201/319

    Abstract: The present invention pertains to electronics, especially vacuum microelectronics, and can be used in the manufacture of deep-level apparatus and vacuum integrated circuits and flat cathodoluminescent displays. The inventive technology includes the formation of film resistive sites on the dielectric surface of the base, after which the conductive film of the cathodic electrode is applied onto the surface of said film resistive sites, while an inverted mask fitted with openings is provided on the surface of the cathodic electrode. Said conductive film of the cathodic electrode passes through the mask, while transmitters coinciding with above-mentioned openings in the dielectric film and the control electrode on the exposed resistive sites are formed on the exposed resistive sites according to self-combined methods. The inventive method includes the possibility for the transmitter surface to be covered with a material capable of stabilizing their emission current, as well as the formation of an oxide at the edge of the openings in the control electrode, resulting in an increased percentage of acceptable deep-level structures, as well as in the emission current from their surface being homogeneous.

    Abstract translation: 本发明涉及电子学，特别是真空微电子学，并且可用于制造深层设备和真空集成电路以及平面阴极发光显示器。 本发明的技术包括在基底的电介质表面上形成膜电阻位点，然后将阴极电极的导电膜施加到所述膜电阻位点的表面上，同时在表面上提供装有开口的倒置掩模 的阴极电极。 所述阴极电极的所述导电膜通过所述掩模，而所述电介质膜中的所述开口与所述开口重合，并且所述暴露的电阻位置上的控制电极根据自组合方法形成在所述暴露的电阻位置上。 本发明的方法包括发射机表面被能够稳定其发射电流的材料以及在控制电极的开口边缘处形成氧化物的可能性，导致可接受深度的增加百分比 水平的结构，以及其表面的发射电流是均匀的。

    A FIELD EMITTER DEVICE WITH A CURRENT LIMITER STRUCTURE
    72.
    发明申请
    A FIELD EMITTER DEVICE WITH A CURRENT LIMITER STRUCTURE 审中-公开
    具有电流限制结构的场发射器件

    公开(公告)号：WO98031044A2

    公开(公告)日：1998-07-16

    申请号：PCT/US1998/000149

    申请日：1998-01-13

    IPC: H01J1/304 ,  H01L

    CPC classification number: H01J1/3042 ,  H01J2201/319 ,  H01J2329/00

    Abstract: A field emitter device includes a column conductor, an insulator, and a resistor structure for advantageously limiting current in a field emitter array. A wide column conductor is deposited on an insulating substrate. An insulator is laid over the column conductor. A high resistance layer is placed on the insulator and is physically isolated from the column conductor. The high resistance material may be chromium oxide or 10 to 50 wt.% Cr+SiO. A group of microtip electron emitters is placed over the high resistance layer. A low resistance strap interconnects the column conductor with the high resistance layer to connect in an electrical series circuit the column conductor, the high resistance layer, and the group of electron emitters. One or more layers of insulator and a gate electrode, all with cavities for the electron emitters, are laid over the high resistance material. One or more layers of insulator and a gate electrode, all with cavities for the electron emitters, are laid over the high resistance material. One layer of insulator is selected from a group of materials including SiC, SiO, and Si3N4. An anode plate is attached with intermediate space between the anode plate and the microtip electron emitters being evacuated.

    Abstract translation: 场致发射器件包括用于有利地限制场发射器阵列中的电流的列导体，绝缘体和电阻器结构。 在绝缘基板上沉积宽的列导体。 绝缘体放置在列导体上。 高电阻层放置在绝缘体上并与柱导体物理隔离。 高电阻材料可以是氧化铬或10至50重量％的Cr + SiO。 一组微尖端电子发射体放置在高电阻层上。 低电阻带将列导体与高电阻层互连，以连接列导体，高电阻层和电子发射体组的电串联电路。 一层或多层绝缘体和栅电极，全部具有用于电子发射体的空腔，铺设在高电阻材料上。 一层或多层绝缘体和栅电极，全部具有用于电子发射体的空腔，铺设在高电阻材料上。 一层绝缘体选自包括SiC，SiO和Si 3 N 4在内的一组材料。 阳极板附接有阳极板和正在抽真空的微尖端电子发射器之间的中间空间。

    LIGHT-INSENSITIVE RESISTOR FOR CURRENT-LIMITING OF FIELD EMISSION DISPLAYS
    73.
    发明申请
    LIGHT-INSENSITIVE RESISTOR FOR CURRENT-LIMITING OF FIELD EMISSION DISPLAYS 审中-公开
    用于现场排放显示器限流的光敏电阻器

    公开(公告)号：WO1998008243A1

    公开(公告)日：1998-02-26

    申请号：PCT/US1997014693

    申请日：1997-08-20

    Applicant: MICRON DISPLAY TECHNOLOGY, INC.

    Inventor： MICRON DISPLAY TECHNOLOGY, INC. ,  CATHEY, David, A., Jr. ,  TJADEN, Kevin, W. ,  MORADI, Behnam ,  LEE, John, K. ,  ALWAN, James, J.

    IPC: H01J01/30

    CPC classification number: H01J1/3042 ,  H01J1/304 ,  H01J31/127 ,  H01J2201/319 ,  H01J2329/00

    Abstract: A semiconductor device for use in field emission displays includes a substrate (30) formed from a semiconductor material, glass, soda lime, or plastic. A first layer of a conductive material (28) is formed on the substrate. A second resistive layer of microcrystalline silicon (32) is formed on the first layer. This layer has characteristics that do not fluctuate in response to conditions that vary during the operation of the field emission display, particularly the varying light intensity from the emitted electrons or from the ambient. One or more cold-cathode emitters (34) are formed on the second layer.

    Abstract translation: 用于场发射显示器的半导体器件包括由半导体材料形成的衬底（30），玻璃，钠钙或塑料。 导电材料（28）的第一层形成在衬底上。 在第一层上形成微晶硅（32）的第二电阻层。 该层具有响应于在场发射显示器的操作期间变化的条件，特别是来自发射的电子或来自环境的变化的光强度而不波动的特性。 一个或多个冷阴极发射器（34）形成在第二层上。

    FIELD EMISSION CATHODE AND A DEVICE BASED THEREON
    77.
    发明申请
    FIELD EMISSION CATHODE AND A DEVICE BASED THEREON 审中-公开
    场发射阴极及其基于设备

    公开(公告)号：WO1996003762A1

    公开(公告)日：1996-02-08

    申请号：PCT/RU1995000154

    申请日：1995-07-18

    Applicant: GIVARGIZOV, Evgeny Invievich ,  ZHIRNOV, Viktor Vladimirovich ,  STEPANOVA, Alla Nikolaevna ,  OBOLENSKAYA, Lidia Nikolaevna

    IPC: H01J01/30

    CPC classification number: H01J1/3042 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/319 ,  H01J2329/00

    Abstract: A matrix field-emission cathode (5) comprises a monocrystalline silicon substrate (7) on which are arranged epitaxially grown pointed silicon emitters (1) which also act as a ballast resistor connected in series. In an advantageous embodiment of the proposed cathode, for a radius of curvature (r) at the emitter tip not exceeding 10 nm, the ratio of the height (h) of the emitter to the radius (r) is not less than 1000, while the ratio of (h) to the diameter (D) at the emitter base is not less than 1. The angle alpha at the emitter tip does not exceed 30 DEG . The specific resistance of the emitter material is chosen so as to ensure that the resistance of each emitter will be comparable with the resistance between the cathode and the opposing electrode. The proposed cathode is used in an electronic device for displaying information which also has an anode (3) in the form of a strip (11) of phosphorescent material (10) and a conducting layer (9) whose projection onto the cathode (5) is perpendicular to the conducting paths (6) on the cathode; the anode itself acts as the control electrode.

    Abstract translation: 矩阵场致发射阴极（5）包括单晶硅衬底（7），其上布置有外延生长的尖晶硅发射体（1），其也用作串联连接的镇流电阻器。 在所提出的阴极的有利实施例中，对于发射极尖端处的曲率半径（r）不超过10nm，发射器的高度（h）与半径（r）之比不小于1000，而 （h）与发射极基底的直径（D）之比不小于1.发射极尖端的角度α不超过30°。 选择发射极材料的电阻率，以确保每个发射极的电阻与阴极和相对电极之间的电阻相当。 所提出的阴极用于显示信息的电子设备中，该电子设备还具有磷光材料条带（11）形式的阳极（3）和在阴极（5）上投影的导电层（9） 垂直于阴极上的导电路径（6）; 阳极本身用作控制电极。

    EMITTER TIP STRUCTURE AND FIELD EMISSION DEVICE COMPRISING SAME, AND METHOD OF MAKING SAME
    78.
    发明申请
    EMITTER TIP STRUCTURE AND FIELD EMISSION DEVICE COMPRISING SAME, AND METHOD OF MAKING SAME 审中-公开
    包括其的发射体尾部结构和场发射装置及其制造方法

    公开(公告)号：WO1994020975A1

    公开(公告)日：1994-09-15

    申请号：PCT/US1994002669

    申请日：1994-03-11

    Applicant: FED CORPORATION

    Inventor： FED CORPORATION ,  JONES, Gary, W.

    IPC: H01J19/24

    CPC classification number: H01J31/127 ,  G02B27/2235 ,  G09G3/001 ,  H01J3/022 ,  H01J9/025 ,  H01J29/028 ,  H01J29/82 ,  H01J29/94 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/319 ,  H01J2209/385 ,  H01J2329/8625 ,  H01J2329/864 ,  H01J2329/8645 ,  H04N5/70 ,  H04N5/7491

    Abstract: A vertical field emitter structure (116) and field emission device such as a flat panel display (123) utilizing such structure. Self-aligned gate and emitter fabrication is described, together with virtual column field emitter structures (321), comprising an emitter or gated emitter (328) with conductive columns connecting the emitter to an underlying resistor or conductor structure (325) formed by chemical or other modification of portions of an underlying layer. The display of the invention utilizes field emission structures with low turn-on voltages and high accelerating voltages, thereby permitting high brightness, small pixel size, low manufacturing costs, uniform brightness, and high energy efficiency to be achieved.

    Abstract translation: 垂直场致发射结构（116）和利用这种结构的场致发射器件如平板显示器（123）。 描述了自对准栅极和发射极制造，以及虚拟列场发射器结构（321），其包括发射极或门控发射极（328），其中导电柱将发射极连接到由化学或电子发射器形成的下伏电阻或导体结构（325） 下层的部分的其他修改。 本发明的显示器利用具有低导通电压和高加速电压的场致发射结构，从而可以实现高亮度，小像素尺寸，低制造成本，均匀亮度和高能量效率。

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