公开(公告)号：WO2013090532A1

公开(公告)日：2013-06-20

申请号：PCT/US2012/069435

申请日：2012-12-13

Applicant: APPLIED MATERIALS, INC.

Inventor： RITCHIE, Alan ,  YOUNG, Donny ,  MILLER, Keith A. ,  RASHEED, Muhammad ,  SANSONI, Steve ,  PAI, Uday

IPC: C23C14/34

CPC classification number: C23C14/34 ,  H01J37/3417 ,  H01J37/3423 ,  H01J37/3435 ,  H01J37/3441

Abstract: In some embodiments, substrate processing apparatus may include a chamber body; a lid disposed atop the chamber body; a target assembly coupled to the lid, the target assembly including a target of material to be deposited on a substrate; an annular dark space shield having an inner wall disposed about an outer edge of the target; a seal ring disposed adjacent to an outer edge of the dark space shield; and a support member coupled to the lid proximate an outer end of the support member and extending radially inward such that the support member supports the seal ring and the annular dark space shield, wherein the support member provides sufficient compression when coupled to the lid such that a seal is formed between the support member and the seal ring and the seal ring and the target assembly.

Abstract translation: 在一些实施例中，衬底处理装置可以包括腔体; 设置在所述室主体顶部的盖子; 耦合到所述盖的目标组件，所述目标组件包括待沉积在衬底上的材料的靶; 环形暗空间屏蔽，其具有围绕靶的外边缘设置的内壁; 邻近所述暗室屏蔽的外边缘设置的密封环; 以及支撑构件，其紧邻所述支撑构件的外端并且径向向内延伸，使得所述支撑构件支撑所述密封环和所述环形暗空间屏蔽，其中所述支撑构件在联接到所述盖时提供足够的压缩，使得 在支撑构件和密封环以及密封环和目标组件之间形成密封件。

公开(公告)号：WO2012109104A3

公开(公告)日：2013-01-03

申请号：PCT/US2012023762

申请日：2012-02-03

Applicant: APPLIED MATERIALS INC ,  RASHEED MUHAMMAD M ,  WANG RONGJUN ,  NGUYEN THANH X ,  RITCHIE ALAN A

Inventor： RASHEED MUHAMMAD M ,  WANG RONGJUN ,  NGUYEN THANH X ,  RITCHIE ALAN A

IPC: H01L21/203

CPC classification number: H01J37/34 ,  H01J37/32082 ,  H01J37/3441

Abstract: Embodiments of the invention generally relate to a grounding kit for a semiconductor processing chamber, and a semiconductor processing chamber having a grounding kit. More specifically, embodiments described herein relate to a grounding kit which creates an asymmetric grounding path selected to significantly reduce the asymmetries caused by an off center RF power delivery.

Abstract translation: 本发明的实施例一般涉及用于半导体处理室的接地套件和具有接地套件的半导体处理室。 更具体地说，本文描述的实施例涉及一种接地套件，该接地套件产生一个非对称接地路径，该非接地套件被选择以显着地减少由偏心的RF功率输送引起的

公开(公告)号：WO2012100971A1

公开(公告)日：2012-08-02

申请号：PCT/EP2012/050105

申请日：2012-01-04

Applicant: APPLIED MATERIALS, INC. ,  SCHNAPPENBERGER, Frank ,  MULTERER, Jürgen

Inventor： SCHNAPPENBERGER, Frank ,  MULTERER, Jürgen

IPC: H01J37/34

CPC classification number: H01J37/3405 ,  H01J37/3435 ,  H01J37/3441

Abstract: It is provided a device for supporting a rotatable target (1) of a deposition apparatus for sputtering material onto a substrate (20), wherein the device includes a drive unit (2) for rotating the rotatable target (1); a ring-shaped part (3) connected to the drive unit (2) for attaching the drive unit to the rotatable target (1); and, a shield (4) for covering the ring- shaped part (3). The shield (4) is adapted for rotating together with the ring-shaped part (3) and includes a plurality of parts assembled together. Furthermore, a sputtering apparatus and a method for supporting a rotatable target are provided.

Abstract translation: 提供了一种用于将用于溅射材料的沉积设备的可旋转靶材（1）支撑在基底（20）上的装置，其中该装置包括用于旋转可旋转靶材（1）的驱动单元（2）。 连接到所述驱动单元（2）的用于将所述驱动单元附接到所述可旋转靶（1）的环形部分（3）; 以及用于覆盖环形部分（3）的屏蔽（4）。 护罩（4）适于与环形部件（3）一起旋转并且包括组装在一起的多个部件。 此外，提供了一种用于支撑可旋转靶的溅射装置和方法。

公开(公告)号：WO2010115128A3

公开(公告)日：2011-01-13

申请号：PCT/US2010029815

申请日：2010-04-02

Applicant: APPLIED MATERIALS INC ,  ALLEN ADOLPH MILLER ,  HAWRYLCHAK LARA ,  XIE ZHIGANG ,  RASHEED MUHAMMAND M ,  WANG RONGJUN ,  TANG XIANMIN ,  LIU ZHENDONG ,  GUNG TZA-JING ,  GANDIKOTA SRINIVAS ,  CHANG MEI ,  COX MICHAEL S ,  YOUNG DONNY ,  SAVANDAIAH KIRANKUMAR ,  GE ZHENBIN

Inventor： ALLEN ADOLPH MILLER ,  HAWRYLCHAK LARA ,  XIE ZHIGANG ,  RASHEED MUHAMMAND M ,  WANG RONGJUN ,  TANG XIANMIN ,  LIU ZHENDONG ,  GUNG TZA-JING ,  GANDIKOTA SRINIVAS ,  CHANG MEI ,  COX MICHAEL S ,  YOUNG DONNY ,  SAVANDAIAH KIRANKUMAR ,  GE ZHENBIN

IPC: H01L21/203 ,  C23C14/34

CPC classification number: C23C14/564 ,  C23C14/345 ,  C23C14/3492 ,  C23C14/35 ,  C23C14/548 ,  H01J37/32642 ,  H01J37/3405 ,  H01J37/3408 ,  H01J37/3441 ,  H01J37/3455

Abstract: Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.

Abstract translation: 本发明的实施例通常提供用于执行物理气相沉积（PVD）工艺的处理室和沉积多组分膜的方法。 处理室可以包括：改进的RF馈送配置以减少任何驻波效应; 改进的磁控管设计，以增强RF等离子体均匀性，沉积膜组成和厚度均匀性; 改进的衬底偏置结构以改善工艺控制; 以及改进的工艺组件设计，以改善衬底临界表面附近的RF场均匀性。 该方法包括使用耦合到多组分靶的RF电源在室的处理区域中形成等离子体，相对于多组分靶物平移磁控管，其中磁控管相对于中心点位于第一位置 的多组分靶，同时磁控管正在平移并且形成等离子体，并且在腔室中的基底上沉积多组分膜。

公开(公告)号：WO2005004189A3

公开(公告)日：2006-01-19

申请号：PCT/US2004020186

申请日：2004-06-22

Applicant: APPLIED MATERIALS INC ,  GUNG TZA-JING ,  TANG XIANMIN ,  FORSTER JOHN ,  DING PEIJUN ,  SCHWEITZER MARC ,  MILLER KEITH A ,  LAVITSKY ILYA

Inventor： GUNG TZA-JING ,  TANG XIANMIN ,  FORSTER JOHN ,  DING PEIJUN ,  SCHWEITZER MARC ,  MILLER KEITH A ,  LAVITSKY ILYA

IPC: H05H1/46 ,  C23C14/04 ,  C23C14/34 ,  C23C14/35 ,  H01J37/32 ,  H01J37/34 ,  H01L21/285 ,  H01L21/768

CPC classification number: H01J37/3402 ,  C23C14/046 ,  C23C14/345 ,  C23C14/3457 ,  C23C14/358 ,  H01J37/321 ,  H01J37/32623 ,  H01J37/3408 ,  H01J37/3411 ,  H01J37/3441 ,  H01J2237/3327 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76877

Abstract: One aspect of the invention includes an auxiliary magnet ring positioned outside of the chamber wall of a plasma sputter reactor and being disposed at least partially radially outwardly of an RF coil used to inductively generate a plasma, particularly for sputter etching the substrate being sputter deposited. Thereby, a magnetic barrier prevents the plasma from leaking outwardly to the coil and improves the uniformity of sputter etching. The magnetic field also acts as a magnetron when the coil, when made aspect of the same material as the primary target, is being used as a secondary target. Another aspect of the invention includes a one-piece inner shield extending from the target to the pedestal with a smooth inner surface and supported by an annular flange in a middle portion of the shield. The shield may be used to support the RF coil.

Abstract translation: 本发明的一个方面包括位于等离子体溅射反应器的室壁外部的辅助磁环，并且至少部分地设置在用于感应地产生等离子体的RF线圈的径向外侧，特别是用于溅射蚀刻被溅射沉积的衬底。 因此，磁屏障防止等离子体向外泄漏到线圈并提高溅射蚀刻的均匀性。 当线圈当与主要目标相同的材料制成的方面被用作次要靶时，磁场也用作磁控管。 本发明的另一方面包括从目标件延伸到具有光滑的内表面并由屏蔽件的中间部分中的环形凸缘支撑的一体式内屏蔽件。 屏蔽可用于支持RF线圈。

公开(公告)号：WO2006001975A1

公开(公告)日：2006-01-05

申请号：PCT/US2005/019194

申请日：2005-06-01

Applicant: TOSOH SMD, INC. ,  IVANOV, Eugene, Y.

Inventor： IVANOV, Eugene, Y.

IPC: C23C14/34

CPC classification number: H01J37/3441 ,  C23C14/564 ,  H01J37/32495 ,  H01J37/32633 ,  H01J37/3408

Abstract: A shield (22) for protecting chamber walls (14) of a sputter reactor (10) comprising foam metal shaped into a desired shield shape. The foam metal inserts (24) are easily configured for mounting within the sputter reactor chamber. The foam metal shield material provides more surface area and better adhesion of the sputter coated particles, thereby reducing particulate emission and allowing longer use before replacement. The shields are also relatively inexpensive to fabricate. Once the shield is coated with sputter particles, the foam metal shield can be removed from the sputter chamber and heated in a thermite reaction, thereby reducing the particles collected on the foam metal shield to an elemental metal and thus facilitating recovery of the deposited sputter material. The apparatus has a target (12), vacuum pump (21), pedestal (18), substrate (16), gas supply system (20), clips (25), insulating ring (26), DC power supply (24), and metal layer (28).

Abstract translation: 一种用于保护溅射反应器（10）的室壁（14）的屏蔽（22），其包括形成所需屏蔽形状的泡沫金属。 泡沫金属插入件（24）容易配置成安装在溅射反应器室内。 泡沫金属屏蔽材料提供更多的表面积和更好的喷涂涂层颗粒的附着力，从而减少颗粒物排放并允许在更换之前更长时间使用。 盾牌的制造也相对便宜。 一旦屏蔽层被溅射颗粒涂覆，泡沫金属屏蔽层可以从溅射室移除并在铝热反应中加热，从而将收集在泡沫金属屏蔽上的颗粒减少到元素金属，从而有助于回收沉积的溅射材料 。 该设备具有目标（12），真空泵（21），基座（18），基板（16），气体供应系统（20），夹子（25），绝缘环（26），直流电源（24） 和金属层（28）。

公开(公告)号：WO9614653A3

公开(公告)日：1996-08-29

申请号：PCT/US9515324

申请日：1995-11-03

Applicant: MATERIALS RESEARCH CORP

Inventor： VANNUTT CHARLES N ,  DE BHOLA N ,  ISHII JONATHAN

IPC: H05H1/46 ,  C23C14/34 ,  H01J37/34

CPC classification number: H01J37/3441 ,  H01J37/34 ,  H01J37/3423 ,  H01J2237/0206

Abstract: Arcing in a plasma process is reduced by shaping the target (40) and dark space shield (13) so that their peripheral regions curve away from each other, reducing electric fields and the propensity for arcing between the target and dark space shield. Also disclosed is an improved system for detecting arcing and presenting data related to detected arcs for analysis; the system generates a graph of the number of arcs, or rate of arcing, as a function of total power consumed, or alternatively a histogram of bars (120) each indicating the number of arcs having an associated magnitude.

公开(公告)号：WO1994016118A1

公开(公告)日：1994-07-21

申请号：PCT/US1994000290

申请日：1994-01-07

Applicant: THE BOC GROUP, INC.

Inventor： THE BOC GROUP, INC. ,  SIECK, Peter, A. ,  PORTER, John, R.

IPC: C23C14/34

CPC classification number: H01J37/3441 ,  C23C14/35 ,  H01J37/3405 ,  H01J37/3426

Abstract: A rotating cylindrical sputtering target surface (29) as part of a magnetron has cylindrical shields (70) adjacent each end of the target (29) that are shaped at their respective inner edges (70) to maximize etching and to prevent condensation and subsequent arcing that undesirably occurs when certain materials, particularly dielectrics, are being sputtered. If two or more rotating targets (29) are employed in a single magnetron system, each is similarly shielded. In an alternative form, the target (29) is provided with a single cylindrical shield (69) that is cut away for a significant portion of the distance around the cylinder to provide an opening through which a sputtering region of the target is accessible, while maintaining shielding of the target end regions. This alternative single shield (69) is similarly shaped at portions of its inner edges adjacent to the opening to maximize etching and to prevent undesired condensation and subsequent arcing. The preferred shield structure (69) is rotatable in order to allow the position of the sputtering activity to be selected.

Abstract translation: 作为磁控管的一部分的旋转的圆柱形溅射靶表面（29）具有与目标（29）的每个端部相邻的圆柱形屏蔽（70），其在其相应的内边缘（70）处成形，以最大化蚀刻并防止冷凝和随后的电弧 当某些材料，特别是电介质被溅射时，这是不期望的。 如果在单个磁控管系统中使用两个或更多个旋转靶（29），则每个都类似地被屏蔽。 在替代形式中，目标（29）设置有单个圆柱形屏蔽（69），该单个圆柱形屏蔽（69）在围绕圆柱体的距离的很大部分被切除以提供目标的溅射区域可通过的开口，同时 保持目标端区域的屏蔽。 该替代的单个屏蔽（69）在其与边缘相邻的内边缘的部分处类似地成形，以最大化蚀刻并防止不期望的冷凝和随后的电弧放电。 优选的屏蔽结构（69）可旋转，以便选择溅射活性的位置。

公开(公告)号：WO2017035008A1

公开(公告)日：2017-03-02

申请号：PCT/US2016/047849

申请日：2016-08-19

Applicant: APPLIED MATERIALS, INC.

Inventor： SUBRAMANI, Anantha K. ,  WU, Hanbing ,  WANG, Wei W. ,  GOEL, Ashish ,  GUGGILLA, Srinivas ,  NISTOR, Lavinia

IPC: C23C14/34 ,  C23C14/50 ,  C23C14/56

CPC classification number: C23C14/564 ,  C23C14/3464 ,  H01J37/3417 ,  H01J37/3441

Abstract: Embodiments of methods and apparatus for co-sputtering multiple target materials are provided herein. In some embodiments, a process chamber includes: a substrate support to support a substrate; a plurality of cathodes coupled to a carrier and having a corresponding plurality of targets to be sputtered onto the substrate; and a process shield coupled to the carrier and extending between adjacent pairs of the plurality of targets.

Abstract translation: 本文提供了用于共溅射多种靶材料的方法和设备的实施例。 在一些实施例中，处理室包括：用于支撑衬底的衬底支撑件; 耦合到载体并且具有相应的多个靶以溅射到所述衬底上的多个阴极; 以及耦合到所述载体并在所述多个靶的相邻对之间延伸的过程屏蔽。

公开(公告)号：WO2015172549A1

公开(公告)日：2015-11-19

申请号：PCT/CN2014/092368

申请日：2014-11-27

Applicant: 北京北方微电子基地设备工艺研究中心有限责任公司

Inventor： 张彦召 ,  佘清 ,  陈鹏

IPC: H01J37/32 ,  H01L21/00 ,  C23C14/34

CPC classification number: H01J37/3441 ,  C23C14/14 ,  C23C14/35 ,  C23C14/564 ,  H01J37/32651 ,  H01J37/3405 ,  H01L21/00 ,  H01L21/2855

Abstract: 一种反应腔室及半导体加工设备，包括采用不导磁的材料制成的法拉第屏蔽环（21）和采用绝缘材料制成的绝缘环（22），在法拉第屏蔽环（21）上开设有沿轴向贯穿其环面的开缝，法拉第屏蔽环（21）和绝缘环（22）均环绕反应腔室的内周壁而设置在反应腔室内，且法拉第屏蔽环（21）沿竖直方向叠置在绝缘环（22）上。其中，环绕绝缘环（22）的内周壁设置有遮蔽环（211），该遮蔽环（211）与法拉第屏蔽环（21）下表面上的靠近反应腔室中心的区域连接，该遮蔽环（211）采用不导磁的材料制成且在其上开设有沿轴向贯穿其环面的开缝。反应腔室及半导体加工设备不仅可以避免降低打火风险，而且可以降低金属粒子剥落对反应腔室造成的污染；另外，可以增大反应腔室的内径和可利用空间。