Abstract:
A nonvolatile memory element (130) constituting a flash memory is constructed such that a gate oxide film (GO2) and a gate electrode (GT2) of a transitor of another circuit formed over the same semiconductor substrate are a tunnel oxide film (GO3) and a floating gate electrode (FGT), respectively. One memory cell has a two-element one-bit construction composed of a pair of nonvolatile memory elements connected with paired complementary data lines. For the paired nonvolatile memory elements, threshold voltage states which are different from each other are set up so that they are differentially read. A word line voltage in reading operation is substantially equal to a threshold voltage (initial threshold voltage) in a thermal by equilibrium state of the non-volatile memory elements, desirably to an average of the low threshold voltage and the high threshold voltage of the memory elements. No matter whether the paired nonvolatile memory elements may be in the high threshold voltage state or in the low threshold voltage state, their threshold voltage are liable to approach the initial threshold voltage asymptotically to deteriorate in their characteristics. At this time, a word line selecting voltage is substantially equal to the initial threshold voltage, so that the read failure hardly occurs even if the characteristic deterioration of one memory element progresses relatively.
Abstract:
The present invention provides a memory card equipped with an interface controller connected to external connecting terminals, a memory connected to the interface controller, and a security controller connected to the interface controller. A second external connecting terminal capable of supplying an operating power supply to the security controller is provided aside from a first external connecting terminal which supplies an operating power supply to the interface controller and the memory. An interface unit of the interface controller connected to the security controller receives the operating power supply from the second external connecting terminal and thereby enables a stop of the supply of the operating power supply from the first external connecting terminal. Even if the supply of the operating power supply to the interface controller is cut off, the output of the interface unit is not brought to an indefinite state.
Abstract:
Shared contact holes SC1 and SC2 reach both gate electrode layers GE1 and GE2 and a drain region PIR. In a planar view, a sidewall E2 of gate electrode layers GE1 and GE2 is shifted toward a side of a sidewall E4 from a virtual extended line E1a of the sidewall E1. In a planar view, a center line (C2-C2) of a line width D1 in a portion that shared contact holes SC1 and SC2 of gate electrode layers GE1 and GE2 reach is located while shifted with respect to a center line (C1-C1) of a line width D2 in a portion located on channel formation regions CHN1 and CHN2 of gate electrode layers GE1 and GE2. Therefore, a semiconductor device such as an SRAM or TCAM and a photomask that can suppress an opening defect of the shared contact hole are obtained.
Abstract:
A technique for an IC capable of achieving the large expandability of the memory capacity, a memory capacity and cost burden in accordance with the requirements of users is provided. The IC card of the present invention is a flash memory card 306 mounted with a flash memory, characterized in that the flash memory card 306 can be inserted into a Plug-in SIM adaptor 305a and/or a mini UICC adaptor 305b each mounted with a secure IC, the flash memory card 306 is inserted into the Plug-in SIM adaptor 305a or the mini UICC adaptor 305b, thereby operating as a SIM attached with an expansion memory or a mini UICC attached with an expansion memory, and the flash memory card 306 can be physically removed from the Plug-in SIM adaptor 305a or the mini UICC adaptor 305b.
Abstract:
A CODEC compresses and encodes a motion picture captured at a high speed of 240 fps frame rate in MPEG format. The CODEC divides pictures in each frame into I pictures and the main frame P pictures and the other sub frame P pictures. In encoding P pictures of the main frame, the CODEC uses I pictures that are adjacent on the time axis or P pictures of other main frames as a reference picture. With a playback device, etc., of its motion picture playback performance of 60 fps, to perform an actual speed playback with the playback time being equal to the picture-capturing time, only the main frame alone is to be subjected to playback, in that case the decoding process of P pictures of the sub frames is not required.
Abstract:
A semiconductor device has operation modes selectable through the control by a second microcomputer (113). In a first mode, an operation of a memory controller (105) responding to a memory card command from a memory card interface terminal and an operation of a first microcomputer (106) responding to an IC card command from an IC card interface terminal are separately performed. In a second mode, the first microcomputer operates in response to the IC card command from the IC card interface terminal. In a third mode, the memory controller and the first microcomputer operate in response to an undefined IC card command from the IC card interface terminal. In a fourth mode, the memory controller and the first microcomputer operate in response to the memory card command from the memory card interface terminal. Convenience of the semiconductor device having an IC card function and a memory card function is improved.
Abstract:
An authenticating system according to the present invention has a characteristic structure of which an authenticating section 32 of a note type PC 10 and an authenticating section 42 of a battery 20 are directly connected through I/O ports 51 and 61, respectively. Thus, the authenticating system according to the present invention can be relatively easily accomplished using a conventional system. The present invention can be applied to a system that is composed of a plurality of electronic devices that perform an authenticating process.
Abstract:
A gas for use in cleaning a chamber and etching a silicon-containing film, characterized in that it comprises a perfluoro cyclic ether having two to four oxygen atoms bonded to carbon atoms in an ether linkage. The gas for use in cleaning a chamber and etching a silicon-containing film is a non-toxic gas or volatile liquid, is environmentally friendly since it is less prone to formation of CF4 which is considered to have global warming effect and thus harmful to the environment, is easy to handle, and is excellent with respect to the easiness in the treatment of an exhaust gas derived therefrom, and further exhibits an excellent cleaning speed.
Abstract:
A method of forming a resist pattern through liquid immersion exposure in which exposure is performed such that a liquid film is formed between a substrate for a semiconductor device on which a processed film is formed and an objective lens arranged above the substrate is provided, and the substrate treated with a water-repellent agent solution composed of at least a water-repellent agent and a solvent is exposed to light.