Abstract:
The present disclosure is directed to a voltage-to-current sensing circuit having a bias terminal configured to receive a reference voltage, an offset terminal configured to receive an offset current, and an operational amplifier configured to output a low voltage signal. The device includes a first amplifier having first and second high voltage inputs configured to receive a first voltage difference across a sense component on a high voltage line and to generate a first current, a second amplifier having first and second low voltage inputs configured to receive a second voltage difference between the bias terminal and the offset terminal and to generate a second current, a summing circuit configured to provide an intermediate voltage corresponding to a sum of the first and the second currents, and a low-voltage transistor coupled to an output of the amplifier and controlled by the intermediate voltage to generate the output current.
Abstract:
Selon un aspect, il est proposé un système (SYS) comprenant une unité de contrôle (UC) configurée pour pouvoir être connectée électriquement à une entrée (IN) d'une mémoire (MEM) via une interface de communication (COM), l'unité de contrôle (UC) présentant un premier domaine d'alimentation (VCore) configuré pour être alimenté lorsque l'unité de contrôle (UC) est dans un mode de fonctionnement et un deuxième domaine d'alimentation (VIO) configuré pour être alimenté lorsque l'unité de contrôle (UC) est dans le mode de fonctionnement et dans le mode de consommation réduite, dans lequel l'unité de contrôle (UC) comporte respectivement dans le premier domaine d'alimentation (VCore) et dans le deuxième domaine d'alimentation (VIO) des premiers moyens de configuration et des deuxièmes moyens de configuration adaptés pour configurer une valeur de polarisation de ladite entrée (IN) de la mémoire (MEM) via l'interface de communication (COM).
Abstract:
A processing system (10a) is described. The processing system (10a) comprises a transmission terminal (TX) configured to provide a transmission signal (TXD), a reception terminal (RX) configured to receive a reception signal (RXD), a microprocessor (1020) programmable via software instructions, a memory controller (100) configured to be connected to a memory (104, 104b), a serial communication interface (50), and a communication system (114). Specifically, the serial communication interface (50) supports a CAN FD Light mode of operation and a UART mode of operation. For this purpose, the serial communication interface (50) comprises a control register (CTRL), a clock management circuit (5044), a transmission shift register (5040; 5056), a transmission control circuit (5046), a reception shift register (5042; 5056) and a reception control circuit (5048). Accordingly, the microprocessor (1020) may transmit and/or receive CAN FD Light or UART frames via the same serial communication interface (50).
Abstract:
A state machine for generating signals configured for generating different signals according to the current state (SO, S1, S2, S3, IDLE) of the machine. The state machine is configured to change state both as a function of an internal timer (Cmp(n)) and as a function of signals (Edge(x); Edge (y)) representative of events external to the state machine.
Abstract:
The invention concerns a circuit comprising an output stage (PM1) and a differentiator coupled between an output (2) of the output stage and a control node of the output stage. The invention also concerns a method for controlling the slew rate of an output stage.
Abstract:
A microelectronic device includes a first circuit (21, 22, 25) and a second circuit (23), coupled to the first circuit (21, 22, 25) for selectively preventing operation of the first circuit (21, 22, 25) when a device temperature (T) is higher than a temperature threshold (T SD ). The second circuit is provided with a temperature responsive element (28), thermally coupled to the first circuit (21, 22, 25) for providing a shutdown signal (I SD ) correlated to the device temperature (T). The temperature responsive element (28; 105) includes a reverse-biased junction element (30) and the shutdown signal (I SD ) is correlated to a reverse leakage current (I R ) of the reverse-biased junction element (30).
Abstract:
An amplifier (1) with an output protection having an input stage (2) defining a feedback node (8), an output stage (40) connected to the feedback node (8) and defining an output node supplying an output voltage, and a feedback stage connected between the output nodes (4a,3a) and the feedback node. A mirror stage (4) is connected to the feedback node (3a) and has a same structure as the output stage (3), the mirror stage defining a reference node (4a) connected to the feedback stage (5) for generating a reference voltage to be compared to the output voltage by the feedback stage. The feedback stage (5) generates a current limitation signal fed to the feedback node when a difference between the output and the reference voltages is higher than a threshold.
Abstract:
A compressor control device includes a driving circuit (7a), for controllably supplying a coil (4a) of an electric motor (4) of a compressor (2). A temperature sensor (11) is thermally coupled to the driving circuit (7a) and provides a temperature sensing signal (V T ) correlated to a temperature (T) in the driving circuit (7a). A control stage (8, 9, 10), coupled to the driving circuit (7a) and to the temperature sensor (11), selectively prevents the driving circuit (7a) from supplying the coil (4a), in response to a minimum temperature increment (ΔT) being detected by the temperature sensor (11) within a pre-determined control time window (Δτ).
Abstract:
A microelectronic device includes a first circuit (21, 22, 25) and a second circuit (23), coupled to the first circuit (21, 22, 25) for selectively preventing operation of the first circuit (21, 22, 25) when a device temperature (T) is higher than a temperature threshold (T SD ). The second circuit is provided with a temperature responsive element (28), thermally coupled to the first circuit (21, 22, 25) for providing a shutdown signal (I SD ) correlated to the device temperature (T). The temperature responsive element (28; 105) includes a reverse-biased junction element (30) and the shutdown signal (I SD ) is correlated to a reverse leakage current (I R ) of the reverse-biased junction element (30).