公开(公告)号：WO2006107523A1

公开(公告)日：2006-10-12

申请号：PCT/US2006/009019

申请日：2006-03-13

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  KAUSHAL, Sanjeev ,  SUGISHIMA, Kenji ,  PANDEY, Pradeep

Inventor： KAUSHAL, Sanjeev ,  SUGISHIMA, Kenji ,  PANDEY, Pradeep

IPC: H01L21/00 ,  H01L21/66

CPC classification number: H01L21/67248 ,  H01L21/67288 ,  H01L22/12

Abstract: A method (2100) of determining wafer curvature in real-time is presented; The method (2100) includes establishing a first temperature profile for a hotplate (58, 620) surface, where the hotplate (58, 620) surface is divided into a plurality of temperature control zones. The method (2100) further includes positioning a wafer (14, 690) at a first height above the hotplate (58, 620) surface and determining a second temperature profile for the hotplate (58, 620) surface. The wafer curvature is then determined by using the second temperature profile. Also, a dynamic model (904) of a processing system (900) is presented and wafer curvature can be incorporated into the dynamic model (904).

Abstract translation: 提出了一种实时确定晶片曲率的方法（2100）。 方法（2100）包括建立用于加热板（58,620）表面的第一温度分布，其中加热板（58,620）表面被分成多个温度控制区。 方法（2100）还包括将晶片（14,690）定位在加热板（58,620）表面上方的第一高度处，并确定用于加热板（58,620）表面的第二温度曲线。 然后通过使用第二温度分布来确定晶片曲率。 此外，呈现处理系统（900）的动态模型（904），并且可以将晶片曲率并入到动态模型（904）中。

公开(公告)号：WO2006088561A2

公开(公告)日：2006-08-24

申请号：PCT/US2005/047409

申请日：2005-12-29

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  KEVWITCH, Robert ,  GOSHI, Gentaro ,  HILLMAN, Joseph, T. ,  LOWE, Marie ,  HANSEN, Brandon

Inventor： KEVWITCH, Robert ,  GOSHI, Gentaro ,  HILLMAN, Joseph, T. ,  LOWE, Marie ,  HANSEN, Brandon

IPC: G03F7/42 ,  B08B7/00

CPC classification number: C11D3/3947 ,  B08B7/0021 ,  C11D11/0047 ,  C23G5/00 ,  G03F7/427 ,  H01L21/02063 ,  H01L21/02101 ,  H01L21/31133 ,  H01L21/67057 ,  H05K3/26

Abstract: A method and system (100, 200) is described for treating a substrate (105, 205) with a high pressure fluid, such as carbon dioxide in a supercritical state. A process chemistry is introduced to the high pressure fluid for treating the substrate surface. The process chemistry includes a peroxide-based chemistry.

Abstract translation: 描述了用高压流体（例如超临界状态的二氧化碳）处理衬底（105,205）的方法和系统（100,200）。 将工艺化学物质引入用于处理基材表面的高压流体中。 工艺化学包括基于过氧化物的化学。

公开(公告)号：WO2006039029A3

公开(公告)日：2006-07-27

申请号：PCT/US2005030841

申请日：2005-08-31

Applicant: TOKYO ELECTRON LTD ,  TOKYO ELECTRON AMERICA INC ,  WAJDA CORY

Inventor： WAJDA CORY

IPC: H01L21/311 ,  H01L21/316

CPC classification number: H01L21/28194 ,  C23C16/40 ,  C23C16/401 ,  C23C16/405 ,  C23C16/5096 ,  C23C16/52 ,  H01L21/28185 ,  H01L21/3141 ,  H01L21/31645 ,  H01L21/823857 ,  H01L29/513 ,  H01L29/517

Abstract: A method for forming a thin complete high-k layer (106, 207) for semiconductor applications. The method includes providing a substrate (25, 102, 202, 406) in a process chamber (10, 402), depositing a thick complete high-k layer (206) on the substrate (25, 102, 202, 406), and thinning the deposited high-k layer (206) to form a thin complete high-k layer (106, 207) on the substrate (25, 102, 202, 406). Alternately, the substrate (25, 102, 202, 406) can contain an interface layer (104, 204) between the substrate (25, 102, 202, 406) and the high-k layer (106, 207). The thinning can be performed by exposing the thick high-k layer (206) to a reactive plasma etch process or, alternately, a plasma process capable of modifying a portion of the thick high-­k layer (206) and subsequently removing the modified portion (206a) of the thick high-k layer (206) using wet processing.

Abstract translation: 一种用于形成用于半导体应用的薄的完整高k层（106,207）的方法。 该方法包括在处理室（10,402）中提供衬底（25,102,202,406），在衬底（25,102,202,406）上沉积厚的完整高k层（206），以及 使沉积的高k层（206）变薄以在衬底（25,102,202,406）上形成薄的完整高k层（106,207）。 可选地，衬底（25,102,202,406）可以在衬底（25,102,202,406）和高k层（106,207）之间包含界面层（104,204）。 可以通过将厚的高k层（206）暴露于反应性等离子体蚀刻工艺或者可选地等离子体工艺来执行该稀化，该等离子体工艺能够修改厚的高k层（206）的一部分并随后除去该修改的部分 （206）的厚度（206a）。

公开(公告)号：WO2006058310A1

公开(公告)日：2006-06-01

申请号：PCT/US2005/043018

申请日：2005-11-29

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  SUZUKI, Kenji ,  GUIDOTTI, Emmanuel, P. ,  LEUSINK, Gerrit, J. ,  HARA, Masamichi ,  KUROIWA, Daisuke

Inventor： SUZUKI, Kenji ,  GUIDOTTI, Emmanuel, P. ,  LEUSINK, Gerrit, J. ,  HARA, Masamichi ,  KUROIWA, Daisuke

CPC classification number: C23C16/4481 ,  C23C16/16

Abstract: A high conductance, multi-tray solid precursor evaporation system (50, 150, 300, 300') coupled with a high conductance vapor delivery system (40, 140) is described for increasing deposition rate by increasing exposed surface area of solid precursor (350). The multi-tray solid precursor evaporation system (50, 150, 300, 300') includes a base tray (330) with one or more upper trays (340). Each tray (330, 340) is configured to support and retain film precursor (350) in, for example, solid powder form or solid tablet form. Additionally, each tray (330, 340) is configured to provide for a high conductance flow of carrier gas over the film precursor (350) while the film precursor (350) is heated. For example, the carrier gas flows inward over the film precursor (350), and vertically upward through a flow channel (318) within the stackable trays (340) and through an outlet (322) in the solid precursor evaporation system (50, 150, 300, 300').

Abstract translation: 描述了与高电导蒸气输送系统（40,140）耦合的高电导多托盘固体前体蒸发系统（50,150,300,300'），以通过增加固体前体（350）的暴露表面积来提高沉积速率 ）。 多托盘固体前体蒸发系统（50,150,300,300'）包括具有一个或多个上托盘（340）的基托（330）。 每个托盘（330,340）被配置为以例如固体粉末形式或固体片剂形式支撑并保持膜前体（350）。 另外，每个托盘（330,340）构造成在膜前体（350）被加热的同时提供载气在膜前体（350）上的高电导流。 例如，载气在膜前体（350）上向内流动，并且垂直向上流过可堆叠托盘（340）内的流动通道（318）并通过固体前体蒸发系统（50,150）中的出口（322） ，300,300'）。

公开(公告)号：WO2006039314A1

公开(公告)日：2006-04-13

申请号：PCT/US2005/034749

申请日：2005-09-27

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  BABIC, Darko ,  GOSHI, Gentaro

Inventor： BABIC, Darko ,  GOSHI, Gentaro

IPC: H01L21/00

CPC classification number: H01L21/67034 ,  B08B7/0021 ,  H01L21/67017

Abstract: A method and system (100) for providing a homogeneous processing environment in a high pressure processing system is described. A high pressure fluid and a process chemistry are mixed in a pre-mixing system (160) prior to exposure with the fluid in a supercritical state of a substrate in the high pressure processing system (110). For example, the pre-mixing system can include a fluid circulation system (120) configured to bypass the high pressure processing system until the high pressure fluid and the process chemistry are mixed. Alternatively, the pre-mixing system can include a mixing chamber, and optionally include means for agitating the high pressure fluid and process chemistry in the mixing chamber.

Abstract translation: 描述了用于在高压处理系统中提供均匀处理环境的方法和系统（100）。 在与高压处理系统（110）中的基板的超临界状态的流体接触之前，将高压流体和工艺化学物质混合在预混合系统（160）中。 例如，预混合系统可以包括流体循环系统（120），其构造成绕过高压处理系统直到高压流体和工艺化学品混合。 或者，预混合系统可以包括混合室，并且任选地包括用于搅拌高压流体和在混合室中处理化学物质的装置。

公开(公告)号：WO2006009667A3

公开(公告)日：2006-01-26

申请号：PCT/US2005/020808

申请日：2005-06-14

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  BRCKA, Jozef

Inventor： BRCKA, Jozef

IPC: C23C14/35 ,  C23C14/02 ,  C23C14/54 ,  H01J37/34 ,  H01J37/32

Abstract: This invention relates to ionized PVD processing of semiconductor wafers and provides conditions for highly uniform deposition-etch process sequence and coverage capabilities of high aspect ratio (HAR) features within a single processing chamber. A plasma is generated and maintained by an inductively coupled plasma (ICP) source (15). A deposition process step is performed in which metal vapor is produced from a target (25) of a PVD source (20). Location and sputter efficiency at the target surface is enhanced by moving a magnet (34) pack to create a traveling or sweeping magnetic field envelope. The target is energized from a DC power supply and pressures effective for an efficient thermalization of the sputtered atoms (30

公开(公告)号：WO2006006991A1

公开(公告)日：2006-01-19

申请号：PCT/US2005/012804

申请日：2005-04-14

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  GUIDOTTI, Emmanuel

Inventor： GUIDOTTI, Emmanuel

IPC: C23C16/44

CPC classification number: C23C16/4405 ,  C23C16/52 ,  H01J37/32862

Abstract: A method (700, 800) and system (1) for controlling an exothermic chamber cleaning process in a process chamber (10). The method (700, 800) includes exposing a system component (20) to a cleaning gas (15) in the chamber cleaning process to remove a material deposit (45) from the system component (20), monitoring at least one temperature-related system component parameter in the chamber cleaning process, determining the cleaning status of the system component (20) from the monitoring, and based upon the status from the determining, performing one of the following: (a) continuing the exposing and monitoring, or (b) stopping the process.

Abstract translation: 一种用于控制处理室（10）中的放热室清洁过程的方法（700,800）和系统（1）。 方法（700,800）包括在室清洁过程中将系统部件（20）暴露于清洁气体（15）以从系统部件（20）移除材料沉积物（45），监测至少一个温度相关 系统组件参数，从监控中确定系统组件（20）的清洁状态，并根据确定的状态，执行以下操作之一：（a）继续暴露和监视，或（ b）停止该过程。

公开(公告)号：WO2005093116A2

公开(公告)日：2005-10-06

申请号：PCT/US2005/005374

申请日：2005-02-22

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  MOSDEN, Aelan

Inventor： MOSDEN, Aelan

IPC: C23C14/00

CPC classification number: H01L21/67748 ,  H01L21/67069

Abstract: An apparatus (100) and method are provided for replacing parts in a vacuum chamber (131) without venting the vacuum. A transfer system (140) is used to transfer a removably mounted component (170) from a processing module (130) that is attached to a transfer system and replacing the component with another component from a maintenance system (110) that is connected through an isolation assembly to a transfer module. The maintenance system may include a supply of replacement parts and receive expended or otherwise serviceable items that are to be replaced. These serviceable items may include chamber component that has a tendency to degrade during processes being performed in the processing module. Typically, such items are etched or eroded away or accumulate coatings, requiring occasional removal and replacement. Focus rings (136), chamber shields, dark space shields, insulators, deposition baffles (146) and adaptors are some of the items requiring periodic replacement. Such items are installed in the process module in a way that permits their removal and replacement by a transfer arm or other transfer mechanism of the transfer system or otherwise by robotic mechanisms. The processing module may be an etching, deposition ALD, patterning, developing, metrology, thermal processing, cleaning or other module used in a vacuum process, particularly for processing of semiconductor wafers.

Abstract translation: 提供了一种用于更换真空室（131）中的部件而不排出真空的装置（100）和方法。 传送系统（140）用于从附接到传送系统的处理模块（130）传送可拆卸地安装的组件（170），并且从维护系统（110）将维护系统（110）替换为组件，维护系统（110）通过 隔离组件到传输模块。 维护系统可以包括替换部件的供应并且接收待更换的消耗或其他可维修的物品。 这些可使用的物品可以包括在处理过程中在处理模块中执行时倾向于降级的腔室部件。 通常，这些物品被蚀刻或腐蚀掉或积聚涂层，需要偶尔的去除和更换。 聚焦环（136），室罩，暗室屏蔽，绝缘体，沉积挡板（146）和适配器是需要定期更换的一些项目。 这些物品以允许通过传送系统的传送臂或其它传送机构或其他机器人机构的移除和更换的方式安装在处理模块中。 处理模块可以是在真空工艺中使用的蚀刻，沉积ALD，图案化，显影，计量，热处理，清洁或其他模块，特别是用于半导体晶片的处理。

公开(公告)号：WO2005034211A3

公开(公告)日：2005-08-04

申请号：PCT/US2004032171

申请日：2004-09-30

Applicant: TOKYO ELECTRON LTD ,  TOKYO ELECTRON AMERICA INC ,  KULP JOHN M

Inventor： KULP JOHN M

IPC: G03F7/30 ,  G03F7/32

CPC classification number: G03F7/322

Abstract: A method and apparatus for developing a resist on a substrate in which a sacrificial surfactant-containing liquid is first applied to a resist as a pretreatment to reduce developing process defects and to improve the development process time and the uniformity of the resist. The pretreatment is followed by supplying a developing solution to the resist and thereafter developing the resist.

Abstract translation: 一种在基板上显影抗蚀剂的方法和设备，其中首先将含有牺牲性表面活性剂的液体施加到抗蚀剂上作为预处理，以减少显影工艺缺陷并改善显影工艺时间和抗蚀剂的均匀性。 在预处理之后，向抗蚀剂供应显影液，然后显影抗蚀剂。

公开(公告)号：WO2005066615A1

公开(公告)日：2005-07-21

申请号：PCT/US2004/041552

申请日：2004-12-09

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  DIXON, David ,  LEE, Lloyd

Inventor： DIXON, David ,  LEE, Lloyd

IPC: G01N21/956

CPC classification number: G01N21/95607 ,  G01N21/278 ,  G01N21/93 ,  G01N21/9501 ,  G01N2021/8416 ,  G01N2201/0695 ,  G01N2201/12753

Abstract: An after develop inspection tool (108, 400) considers tool-to-tool variability when determining confidence score for wafers under inspection. A golden wafer is used to calculate a RGB signature (Figs. 2A-2B) as well as the slope of the individual RGB curves (202, 204, 206) for different lamp intensities. These slopes are normalized in order to generate a compensation factor for red values and blue values within a signature. When a wafer (402) is subsequently inspected at an ADI station (400) using a different lamp (406), the test wafer RGB signature is likely captured at a different lamp intensity. Consequently, when comparing the signatures, the golden wafer RGB signature is adjusted by the compensation factors, based on the different lamp’s intensity setting, and this adjusted RGB signature is then used to determine whether a defect exists on the test wafer.

Abstract translation: 开发检查工具（108,400）在确定检查中的晶片的置信度时，会考虑刀具对刀具的变异性。 使用金色晶片来计算RGB特征（图2A-2B）以及用于不同灯强度的各个RGB曲线（202,204,206）的斜率。 这些斜率被归一化以便在签名中产生红色值和蓝色值的补偿因子。 当使用不同的灯（406）随后在ADI站（400）检查晶片（402）时，可能以不同的灯强度捕获测试晶片RGB特征。 因此，当比较签名时，基于不同的灯的强度设置，通过补偿因子来调整金色晶片RGB签名，然后使用该调整的RGB签名来确定在测试晶片上是否存在缺陷。