Abstract:
PURPOSE: A flash memory device and a method for generating a word line voltage thereof are provided to efficiently read and verify data distributed in a negative voltage domain by converting a negative word line voltage level at high speed. CONSTITUTION: It is discriminated whether a negative voltage is continuously generated(S1000). It is determined whether a negative charge pumping result is equal to or lower than a target negative voltage(S1100). If the negative voltage is not continuously generated, a negative charge is pumped. If the target negative voltage is higher than a prior target negative voltage, the output of a negative voltage generator is discharged(S1200). The target negative voltage is generated by pumping the negative charge if the discharge result is higher than the target negative voltage(S1300).
Abstract:
PURPOSE: A multi-wavelength image restoration processing method and apparatus, and a medical image system adopting the same are provided to restore a tomography image of an object to a final image by using a two dimension projected image of the object. CONSTITUTION: An initial value of a tomography image of an object is calculated(101). A weighted value and an error value are calculated based on a measured value(102). An image signal which is measured is transformed(103). An auxiliary variable which is initialized by using a conversion factor which is necessary for changing the image signal is updated(104). The measured value is updated by using the updated auxiliary variable, the calculated weighted value, and the error value(105).
Abstract:
PURPOSE: An apparatus and method for photographing a breast are provided to accurately photograph minute lime and breast masses in a breast with low-level irradiation by irradiating X-rays having different energy spectrums on different areas of the breast. CONSTITUTION: An X-ray irradiation part(120) irradiates X-rays of a first energy spectrum and a second energy spectrum to a breast test material. The X-ray irradiation part irradiates the X-rays of a third energy spectrum to a second area which is different from the first area. An X-ray detection part(130) generates a plurality of video frames about a breast by detecting irradiated X-rays which pass through the breast. A video generating part(140) generates video data about the breast by editing the plurality of the video frames. The X-ray irradiation part irradiates the X-rays of a fourth energy spectrum and a fifth energy spectrum to a third area of the breast which is different from a first area.
Abstract:
An image acquisition apparatus and method and an image processing apparatus and method are provided to recover a clear color image by using a hand-shaking function, thereby being usefully applied to night watch photographing, night monitoring photographing, and indoor performance photographing. A sensing unit(110) senses a pixel array value by using a color filter. The color filter comprises a color pixel and a reference pixel. The color pixel is to obtain a color image. The reference pixel is to obtain a reference frame used for hand-shaking function estimation. An exposure controller(120) controls an exposure time for the reference pixel and the color pixel. A video generator(130) generates a long-exposure color video signal and a short-exposure reference video signal which are mutually arranged from the sensed pixel array value.
Abstract:
A semiconductor memory system and its accessing method are provided, which improve the reliability of the semiconductor memory system by performing the access considering the change of the cell characteristic. A semiconductor memory system(100) comprises the nonvolatile memory(110) and memory controller(120). The nonvolatile memory stores monitoring data among a plurality of memory cells in one or more memory cells. The memory controller controls the nonvolatile memory. The memory controller detects monitoring data. The memory controller controls the bias voltage provided to a plurality of memory cells according to the detected result.
Abstract:
A multi-bit flash memory device and a program and read methods thereof is provided to perform reading operation accurately by controlling the reading operation according to the programming state of multi-bit data. A memory cell array(110) stores the N- bit data, and a control circuit(150) controls all operations related to program, reading, and erasing of a flash memory(100). Data to be programmed is loaded the control circuit through a buffer in a reading circuit(130). The control circuit applies a program voltage, a pass voltage, and 0V to a selected word line, non-selected word line, and a bulk by controlling a decoding circuit(120), voltage generation circuit(160), and writing/reading circuit.
Abstract:
A flash memory system and an error correction method thereof are provided to reduce the load of an error correction circuit and improve the performance of the error correction circuit. An error correction circuit(230) generates an error correction code for correcting a bit error from the data transmitted to a paper buffer circuit(130) through a row selection circuit(140) when operating a software. The generated error correction code is transferred to the paper buffer circuit through the row selection circuit, and the paper buffer circuit includes a main region and a spare region. The main region stores the data to be programmed and the spare region stores an error correction code. The error correction circuit receives data and an error correction code from the paper buffer circuit during reading operation, and detects whether or not the transmitted data have an error by using the error correction code.
Abstract:
A multi-bit programming device and method for a non-volatile memory are provided. In one example embodiment, a multi-bit programming device may include a multi-bit programming unit configured to multi-bit program original multi-bit data to a target memory cell in a memory cell array, and a backup programming unit configured to select backup memory cells in the memory cell array with respect to each bit of the original multi-bit data, and program each bit of the original multi-bit data to a respective one of the selected backup memory cells.
Abstract:
A multi-bit programming apparatus and method are provided to reduce errors considerably in a process for grasping programming characteristics of a memory, and shorten the time taken for multi-bit programming. A programming characteristic detection unit(210) detects each programming characteristic of memory cells in a target memory page during a process of multi-bit programming original data within the target memory page. A backup programming part(220) selects a backup memory page within a memory cell array and backup-programs information about the detected programming characteristics in the backup memory page. A multi-bit programming control part(230) controls a multi-bit programming process by using information about the programming characteristics backup-programmed.
Abstract:
A memory cell programming method and a semiconductor memory device are provided to reduce memory cell programming time by programming data in a memory cell without initial read operation. At least one memory cell stores data of n bits. A first or an n-th latch(LAT1-LATn) receives the data and then latches the data. The k-th latch receives and latches k-th bit of the data, and programs the k-th bit latched in the k-th latch into the memory cell, by referring to the first or the (k-1)th bit latched in the first or the (k-1)th latch. The latch is included in a page buffer of a semiconductor memory device(500).