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公开(公告)号：KR101750827B1
公开(公告)日：2017-06-27
申请号：KR1020110018457
申请日：2011-03-02
Applicant: 삼성전자주식회사
Abstract: 본발명은통신시스템에서소셜네트워크를이용한미디어공유방법및 장치에관한것으로서, 송신단말의미디어공유방법은, 관계를맺은적어도하나의상대단말에대한식별정보를미디어서버로전송하는과정과, 위치정보를포함하는미디어를생성하는과정과, 생성된미디어를상기미디어서버에등록하는과정을포함하며, 수신단말의미디어공유방법은, 관계를맺은적어도하나의상대단말에대한식별정보를미디어서버로전송하는과정과, 상기수신단말의위치정보를상기미디어서버로전송하는과정과, 상기적어도하나의상대단말이등록한미디어들중에서상기위치정보에대응하는미디어를상기미디어서버로부터수신하는과정을포함하여, 기존의웹 사이트위주의공유에서벗어나공간적인제약을받지않고사용자가활동하는모든지역에서생활과연결되는미디어공유서비스를제공할수 있다.
Abstract translation: 一种在通信系统中使用社交网络共享媒体的方法，所述方法包括：将关于至少一个伙伴终端的识别信息发送到媒体服务器; 并将创建的媒体注册到媒体服务器;接收方终端的媒体分享方法包括将媒体服务器的标识信息发送给媒体服务器 将所述接收终端的位置信息发送给所述媒体服务器;以及从所述媒体服务器接收所述至少一个即将到达的条目被登记到的媒体中与所述位置信息相对应的媒体， ，这与用户活跃的所有地方的生活有关，而不受空间限制。 它可以是一个球。
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Patent Agency Ranking
公开(公告)号：KR1020100048073A
公开(公告)日：2010-05-11
申请号：KR1020080107072
申请日：2008-10-30
Applicant: 삼성전자주식회사
CPC classification number: G06F15/161
Abstract: PURPOSE: A method and a device for recommending content are provided to recommend at least one of contents to the first user through the searched second users. CONSTITUTION: A temporary contents preference information is generated by using a inputted keyword from the first user and content preference information of the first user(110). The second user is searched at a P2P network. The second users have similar contents preference with content preference of the first user. At least one of content is recommended to the first user through the searched second user(120).
Abstract translation: 目的：提供一种用于推荐内容的方法和装置，以通过搜索到的第二用户向第一用户推荐至少一个内容。 构成：通过使用来自第一用户的输入关键字和第一用户（110）的内容偏好信息来生成临时内容偏好信息。 在P2P网络中搜索第二用户。 第二用户具有与第一用户的内容偏好相似的内容偏好。 通过搜索到的第二用户（120）向第一用户推荐至少一个内容。
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公开(公告)号：KR1020090039584A
公开(公告)日：2009-04-22
申请号：KR1020080032663
申请日：2008-04-08
Applicant: 삼성전자주식회사 , 인터내셔널 비즈니스 머신즈 코오퍼레이션 , 인피니언 테크놀로지스 아게 , 글로벌파운드리즈 싱가포르 피티이 엘티디
IPC: H01L21/336 , H01L29/78
CPC classification number: H01L29/7833 , H01L29/665 , H01L29/6653 , H01L29/7843
Abstract: A method for manufacturing a semiconductor integrated circuit device and the semiconductor integrated circuit device are provided to apply the stress to a channel region in a stress film by making a distance between the stress film and the channel region close. A transistor is formed on a semiconductor substrate(100). The transistor includes a gate electrode(120), a first spacer(130), and a source/drain region. A silicide layer(162,164) is formed on an upper part of the gate electrode and the source/drain region by performing a silicide process on the semiconductor substrate. A mask layer exposing a part of an upper part of a first spacer is formed on the semiconductor substrate. The first spacer and the mask are removed. The gate electrode and the semiconductor substrate are covered with a stress film.
Abstract translation: 提供一种制造半导体集成电路器件和半导体集成电路器件的方法，通过使应力膜和通道区域之间的距离接近来将应力施加到应力膜中的沟道区域。 晶体管形成在半导体衬底（100）上。 晶体管包括栅电极（120），第一间隔物（130）和源极/漏极区域。 通过在半导体衬底上进行硅化处理，在栅电极和源极/漏极区的上部形成硅化物层（162,164）。 在半导体基板上形成露出第一间隔物的上部的一部分的掩模层。 第一个间隔物和掩模被去除。 栅电极和半导体衬底被应力膜覆盖。
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公开(公告)号：KR1020090005873A
公开(公告)日：2009-01-14
申请号：KR1020070069257
申请日：2007-07-10
Applicant: 삼성전자주식회사
IPC: H01L23/12
CPC classification number: H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/8592 , H01L2924/15311 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
Abstract: The semiconductor package and manufacturing method thereof are provided to reduce the thickness in the mounting of the semiconductor package by rewiring the center pad chip as the edge pad chip. The semiconductor chip(120) comprises the bonding pad(130) and is arranged on the top of the substrate(110). The bonding pad is arranged in the top surface center of the substrate and serves as the input-output terminal of the electric signal. The semiconductor chip comprises a plurality of bonding pads. The protective film(140) is made of the insulating material like the silicon oxide film or the silicon nitride film and is formed in the top surface of the bonding pad and semiconductor chip. The first insulation layer(150) is formed on the protective film. The metal bottom layer(160) is formed on the upper side and the first insulation layer of the exposed bonding pad.
Abstract translation: 半导体封装及其制造方法被设置为通过重新布线作为边缘焊盘芯片的中心焊盘芯片来减小半导体封装的安装厚度。 半导体芯片（120）包括焊盘（130）并且布置在基板（110）的顶部上。 焊盘设置在基板的顶面中心，作为电信号的输入输出端子。 半导体芯片包括多个接合焊盘。 保护膜（140）由氧化硅膜或氮化硅膜等绝缘材料构成，形成在焊盘和半导体芯片的顶面。 第一绝缘层（150）形成在保护膜上。 金属底层（160）形成在暴露的焊盘的上侧和第一绝缘层上。
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公开(公告)号：KR1020080099627A
公开(公告)日：2008-11-13
申请号：KR1020070045421
申请日：2007-05-10
Applicant: 삼성전자주식회사
Inventor： 이민호
CPC classification number: H04B7/155
Abstract: A communication method of a mobile terminal and an apparatus thereof are provided to enable the mobile terminal to the state of an external network between a repeater and a base station. The method which a repeater uses for relaying communication between a base station and a terminal includes following step of: determining whether the communication environment between the repeater and the base station is changed(210); generating information which shows the communication environment selectively changed according to the determined result(220); and controlling the communication environment between the repeater and the terminal based on the generated information(230).
Abstract translation: 提供移动终端的通信方法及其装置，以使移动终端能够处于中继器和基站之间的外部网络的状态。 中继器用于中继基站和终端之间的通信的方法包括以下步骤：确定中继器和基站之间的通信环境是否改变（210）; 生成显示根据确定结果选择性地改变的通信环境的信息（220）; 以及基于所生成的信息来控制中继器和终端之间的通信环境（230）。
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公开(公告)号：KR1020080015378A
公开(公告)日：2008-02-19
申请号：KR1020070081965
申请日：2007-08-14
Applicant: 삼성전자주식회사
IPC: H01L21/027
CPC classification number: G03F7/40 , H01L21/0273
Abstract: A method for manufacturing a semiconductor integrated circuit device are provided to prevent an unnecessary pattern from being formed on an etching target layer by reducing the generation of a side robe on a photoresist pattern. A mask layer is formed on an etching target layer(110). A photolithography process using an exposing mask is performed to pattern the mask layer. A sacrificial mask layer(130) is formed on the first mask pattern and the etching target layer. A bake process is performed on the first mask pattern and the sacrificial mask layer. Parts of the sacrificial mask layer and the first mask pattern are removed to form a second mask pattern(122). A separation distance between respective patterns of the second mask pattern is more extended than the first mask pattern. The mask layer is a hydrophobic photoresist. The sacrificial mask layer is a hydrophilic photoresist.
Abstract translation: 提供一种制造半导体集成电路器件的方法，以通过减少光致抗蚀剂图案上的侧蓬的产生来防止在蚀刻目标层上形成不需要的图案。 掩模层形成在蚀刻目标层（110）上。 执行使用曝光掩模的光刻工艺以对掩模层进行图案化。 牺牲掩模层（130）形成在第一掩模图案和蚀刻目标层上。 对第一掩模图案和牺牲掩模层进行烘烤处理。 除去牺牲掩模层和第一掩模图案的部分以形成第二掩模图案（122）。 第二掩模图案的各个图案之间的间隔距离比第一掩模图案更加延伸。 掩模层是疏水性光致抗蚀剂。 牺牲掩模层是亲水性光致抗蚀剂。
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