Abstract:
본 발명은 반도체 기판을 건조하는 방법에 관한 것으로, 상기 방법은 마란고니 효과를 이용하여 반도체 기판을 1차적으로 건조하는 단계와 상기 반도체 기판에 부착된 탈이온수를 IPA 증기로 치환하여 반도체 기판을 2차적으로 건조하는 단계를 포함한다. 2차 건조시에 상기 챔버 내의 IPA 증기는 1차 건조시에 비해 고농도로 유지되며, 2차 건조시 챔버 내에서 IPA 증기가 응축되는 것을 방지하기 위해 챔버는 히터에 의해 가열된다.
Abstract:
PURPOSE: A method for cleaning and drying wafers is provided to remove efficiently particles on wafers and to dry efficiently deionized water between patterns having the large aspect ratio. CONSTITUTION: A first density isopropyl alcohol(IPA) is injected onto the surface of a cleaning solution with the wafers entirely dipped thereinto. The surface level of the cleaning solution within a bath is lowered by a first speed during injecting the first density IPA. The second density IPA is injected when the wafers is entirely exposed to the out side of the cleaning solution. The first density is 0.1 to 1.0 mol%. The second density is 5 to 10 mol%. The first speed is 3.5 to 6 mm/second. The cleaning solution is deionized water.
Abstract:
An apparatus for drying a substrate using an isopropyl alcohol vapor includes a container for receiving an isopropyl alcohol vapor to dry a plurality of substrates wherein an opening is vertically formed through an upper portion of the container to permit the loading and unloading of the substrates; a supporting member for supporting the plurality of substrates in the container in a vertical direction and for supporting the substrates side by side in a horizontal direction, wherein the supporting member extends through the container and through the opening; and a cover for obstructing a flow of clean air from flowing directly from an air cleaner disposed over the container into the container through the opening. In addition, the apparatus may include an inert gas supplying member to supply an inert gas onto the substrates to prevent native oxide films from forming on the substrates.
Abstract:
An etching end point detector and its related method of use detect a point of time when an etching process ends by using plasma light generated during a plasma process in a chamber of plasma etching equipment. The detector comprises an optical device receiving light generated in a chamber during the etching process and producing from the light a plurality of optical signals having different corresponding wavelengths; signal converting means receiving the plurality of optical signals and converting the plurality of optical signals into corresponding light intensity values indicating an intensity of the corresponding optical signal; and a signal processor accumulating selected ones of the light intensity values corresponding to predetermined wavelengths to produce an EPD value, and in response to the EPD value, determining an end point of the etching process.
Abstract:
PURPOSE: An apparatus for drying a semiconductor substrate by an azeotrope effect is provided to completely eliminate the moisture remaining on the front surface of a patterned semiconductor substrate by heating the semiconductor substrate that crosses an azeotrope layer and an organic solvent layer having a higher density than that of the azeotrope layer. CONSTITUTION: Liquid(5) is stored in a wet bath(1). A space is prepared over the liquid by a chamber(3) installed in the upper portion of the wet bath. A distributor(11) supplies organic solvent to the surface of the liquid in the wet bath to form the azeotrope layer(5a) on the liquid while forming the organic solvent layer(11a) on the azeotrope layer. A heater heats the organic solvent layer and the atmosphere over the organic solvent layer. A drying gas conduit(17) supplies dry gas to the inside of the chamber.
Abstract:
PURPOSE: An isopropyl alcohol bubbler is provided to prevent defective dry of a wafer when isopropyl alcohol vapor is not sufficient in a drying apparatus by maximizing vaporization of the isopropyl alcohol contained in the isopropyl alcohol bubbler. CONSTITUTION: The isopropyl alcohol of a liquid state is contained in an airtight receptacle(102). The first supply unit supplies the isopropyl alcohol of a liquid state to the inside of the airtight receptacle. The second supply unit supplies nitrogen gas to the isopropyl alcohol contained in the airtight receptacle. An exhausting unit(108) exhausts the isopropyl alcohol vapor volatilized by the supplied nitrogen gas and the nitrogen gas. A plurality of plates(110) is installed in the airtight receptacle at regular intervals so that the bottom of the airtight receptacle confronts the lower surface of the airtight receptacle. The plurality of plates include a plurality of holes(110a) penetrating through the plates from the upper surface to the lower surface to make air bubbles of the nitrogen gas supplied to the inside of the airtight receptacle.