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公开(公告)号：KR1019940010596B1
公开(公告)日：1994-10-24
申请号：KR1019910018987
申请日：1991-10-28
IPC: G03F7/26
Abstract: The wet etching method improves the step coverage of various thin films by using BHF solution with a little amount of ethyl alcohol. The method comprises (A) priming hexamethyldisilazane for five minutes on the thermal oxide (2); (B) spreading the positive photoresist (5) and soft baking and, then hard baking; (C) etching the thermal oxide (2) by using BHF solution with ethanol.
Abstract translation: 湿式蚀刻方法通过使用BHF溶液与少量乙醇来提高各种薄膜的台阶覆盖率。 该方法包括（A）在热氧化物（2）上引发六甲基二硅氮烷五分钟; （B）铺展正性光致抗蚀剂（5）和软烘烤，然后硬烘烤; （C）用BHF溶液用乙醇蚀刻热氧化物（2）。
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公开(公告)号：KR1020160025679A
公开(公告)日：2016-03-09
申请号：KR1020140112397
申请日：2014-08-27
Applicant: 한국전자통신연구원
Abstract: 본발명은센서패키지를제공한다. 센서패키지는하우징, 상기하우징내에위치하는회로부및 센서부, 상기하우징상에위치하고상기회로부및 상기센서부와연결되는전극및 상기하우징과결합하여상기센서부를상기하우징내에실장하는공간인탄성부를제공하는덮개를포함하되, 상기센서부를덮도록상기탄성부내에비전도성탄성물질제공된다.
Abstract translation: 提供传感器封装。 传感器封装包括：壳体; 电路部分和位于壳体内部的传感器部分; 以及盖，其位于所述壳体上并且联接到所述壳体，以及连接到所述电路部分和所述传感器部分的电极，以提供弹性部分，所述弹性部分是将所述传感器部分嵌入所述壳体中的空间，其中， 导电弹性材料覆盖传感器部分。 因此，本发明增加了传递到传感器部分的信号的灵敏度。
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公开(公告)号：KR101090697B1
公开(公告)日：2011-12-08
申请号：KR1020090037239
申请日：2009-04-28
Abstract: 본발명에따른정전용량형마이크로경사계는, 정전용량을검출하는이동전극과고정전극이형상결함이없는평탄하고수직한측면을가지면서경사진빗살형상으로형성되어종래의정전용량형마이크로경사계에비하여정전용량의변화를민감하게검출할수 있다. 또한, 이동전극에대한고정전극의상하간격이서로다르기때문에, 전체경사각도범위에서정전용량의변화를고감도로검출할수 있다.
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公开(公告)号：KR101080914B1
公开(公告)日：2011-11-08
申请号：KR1020080129649
申请日：2008-12-18
Applicant: 한국전자통신연구원
IPC: G01J5/20 , H01L31/101 , G01J1/02
Abstract: 이를위하여, 본발명의일실시예에따른적외선감지용픽셀은, 내부에신호취득회로(Read-Out Integrated Circuit; ROIC)가포함되어있으며, 신호의보정에이용되는보정저항체및 적외선반사를위한반사층이적층된기판; 상기기판으로부터간격을두고형성되며, 온도감응형저항체의저항변화를이용하여입사되는적외선에대응하는신호를출력하는볼로미터구조체; 및상기보정저항체및 상기볼로미터구조체로부터입력되는신호를상기신호취득회로로각각출력하는제 1 금속패드및 제 2 금속패드를포함하되, 상기신호취득회로는, 상기보정저항체로부터입력되는신호및 상기볼로미터구조체로부터입력되는신호를이용하여보정된신호를생성한다.
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公开(公告)号：KR101063298B1
公开(公告)日：2011-09-07
申请号：KR1020080127292
申请日：2008-12-15
Applicant: 한국전자통신연구원
Abstract: 본 발명은 기-액 상변화 냉각장치 및 이의 제작방법에 관한 것으로, 특히 압인공정을 통해 구현할 수 있는 냉각장치 및 이의 제작방법을 제공한다.
이를 위해 본 발명은 각각이 2개의 박판과 상기 박판 사이에 형성된 소결체를 포함하는 2개의 플레이트와, 상기 2개의 플레이트중 적어도 하나의 플레이트상에 압인 공정에 의해 형성된 냉각소자 구조물을 포함하고, 상기 냉각소자 구조물을 밀폐시키도록 상기 2개의 플레이트를 용접물질을 이용하여 결합함으로써 형성되는 냉각장치를 특징으로 한다.
소결체, 플레이트, 압인공정, 박판-
Patent Agency Ranking
公开(公告)号：KR1020100073073A
公开(公告)日：2010-07-01
申请号：KR1020080131658
申请日：2008-12-22
Applicant: 한국전자통신연구원
IPC: H01L31/101
CPC classification number: G01J5/20 , G01J5/02 , G01J5/023 , G01J5/10 , H01L31/022408 , H01L31/108
Abstract: PURPOSE: An infrared ray sensor and a manufacturing method thereof are provided to effectively reduce noises by removing a current which non-uniformly flows by using a sensing electrode classified into a rectangle block. CONSTITUTION: A substrate including a readout circuit and a reflecting layer(13) is formed. A sacrificial layer with an anchor region in a pad region on the substrate is formed. A bottom protection layer(20) is formed on the sacrificial layer. An inter-digitated sensing electrode(30) is formed by being extended from the pad region on the bottom protection layer. A sensing layer(40) and a top protection layer(50) are sequentially formed on the bottom protection layer and the sensing electrode. An opening(60), which exposes an inter-digitated region of the sensing electrode from one pad region and a part where the sensing electrode from the other pad region is separated by patterning the outcome, is formed.
Abstract translation: 目的：提供红外线传感器及其制造方法，通过使用分类为矩形块的感测电极去除不均匀流动的电流来有效地降低噪声。 构成：形成包括读出电路和反射层（13）的基板。 形成在衬底上的衬垫区域中具有锚定区域的牺牲层。 在牺牲层上形成底部保护层（20）。 通过从底部保护层上的焊盘区域延伸而形成数字化的感测电极（30）。 感测层（40）和顶部保护层（50）依次形成在底部保护层和感测电极上。 形成了通过图案化结果而将感测电极的数字化区域从一个焊盘区域暴露出来并且来自另一个焊盘区域的感测电极被分离的部分的开口（60）。
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公开(公告)号：KR1020100070907A
公开(公告)日：2010-06-28
申请号：KR1020080129649
申请日：2008-12-18
Applicant: 한국전자통신연구원
IPC: G01J5/20 , H01L31/101 , G01J1/02
Abstract: PURPOSE: A pixel for sensing infrared rays with resistance for correcting a signal, and a manufacturing method thereof are provided to effectively eliminate DC offset current by forming a correction resistor inside the pixel. CONSTITUTION: A pixel for sensing infrared rays with resistance for correcting a signal comprises a substrate(501), a bolometer assembly(510), a first metal pad(503), and a second metal pad. A signal obtaining circuit is formed inside the substrate. A correction resistor(505) and a reflective layer(507) are loaded on the substrate. The bolometer assembly is separated from the substrate and outputs a signal corresponding to infrared rays. The first and second metal pads output the signal input from the bolometer assembly to the signal obtaining circuit.
Abstract translation: 目的：提供用于感测具有用于校正信号的电阻的红外线的像素及其制造方法，以通过在像素内形成校正电阻器来有效地消除DC偏移电流。 构成：用于感测具有用于校正信号的电阻的红外线的像素包括基底（501），测辐射热计组件（510），第一金属垫（503）和第二金属垫。 在基板内形成信号获取电路。 校正电阻器（505）和反射层（507）被加载到基板上。 测辐射热计组件与基板分离并输出对应于红外线的信号。 第一和第二金属焊盘将从测辐射热计组件输入的信号输出到信号获取电路。
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公开(公告)号：KR100906152B1
公开(公告)日：2009-07-03
申请号：KR1020070126847
申请日：2007-12-07
Applicant: 한국전자통신연구원
IPC: C04B35/16 , C04B111/90
CPC classification number: G01J5/20 , C22C1/04 , C23C14/14 , C23C14/3464
Abstract: 본 발명은 마이크로 볼로미터용 저항재료, 이의 제조방법 및 이를 포함한 마이크로 볼로미터에 관한 것이다. 본 발명에 따른 마이크로 볼로미터용 저항재료는 실리콘에 안티몬 또는 안티몬과 게르마늄을 혼합함으로 얻은 합금이며, 이런 저항재료는 높은 TCR을 가지며, 낮은 저항값을 나타낸다.
마이크로 볼로미터, 실리콘, 안티몬-
公开(公告)号：KR1020090059799A
公开(公告)日：2009-06-11
申请号：KR1020070126847
申请日：2007-12-07
Applicant: 한국전자통신연구원
IPC: C04B35/16 , C04B111/90
CPC classification number: G01J5/20 , C22C1/04 , C23C14/14 , C23C14/3464
Abstract: A resistant material for a microbolometer and the manufacturing method thereof are provided to secure high TCR and low resistance value by adding either antimony or antimony with germanium to silicone. A method for manufacturing a resistant material for a microbolometer comprises: the first step of preparing chambers for the purpose of applying RF or DC power independently; the second step of independently introducing silicone and antimony to each chamber to manufacture an alloy; and the third step of independently applying the power to each chamber and controlling the composition of the alloy. The applied power to the chamber with silicone is 200W-300W. The applied power to the chamber with antimony is 50W-125W.
Abstract translation: 提供微电热计的耐电材料及其制造方法，以通过将锑或锑与锗加入到硅酮中来确保高TCR和低电阻值。 一种用于制造微电热计的电阻材料的方法包括：为了独立地施加RF或DC电力的目的而制备室的第一步骤; 独立地将硅和锑引入每个室以制造合金的第二步骤; 以及独立地将功率施加到每个室并控制合金的组成的第三步骤。 使用硅胶对腔室施加的功率为200W-300W。 锑室的施加功率为50W-125W。
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公开(公告)号：KR1020090058731A
公开(公告)日：2009-06-10
申请号：KR1020070125467
申请日：2007-12-05
Applicant: 한국전자통신연구원
IPC: H01L29/84
CPC classification number: G01L9/0042 , Y10T29/42 , Y10T29/49
Abstract: A micro piezoresistive pressure sensor and a manufacturing method thereof are provided to simplify a manufacturing process by forming a semiconductor integrated circuit for processing a sensing signal and a pressure sensor structure in one silicon board. A micro piezoresistive pressure sensor includes a silicon board(100), a cavity(110), a membrane layer(120) and a sensing layer(130). The cavity is buried in the silicon board. The membrane layer has a laminate structure of a multi layer and seals the cavity. The sensing layer is formed in the upper part of the membrane layer. One or more semiconductor integrated circuits are positioned in the part except for the cavity of the silicon board.
Abstract translation: 提供一种微压阻式压力传感器及其制造方法，以通过形成用于处理一个硅板中的感测信号的半导体集成电路和压力传感器结构来简化制造过程。 微压阻压力传感器包括硅板（100），空腔（110），膜层（120）和感测层（130）。 空腔埋在硅板上。 膜层具有多层的层叠结构并且密封空腔。 传感层形成在膜层的上部。 一个或多个半导体集成电路位于除了硅板的空腔之外的部分中。
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