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公开(公告)号：KR1020170099454A
公开(公告)日：2017-09-01
申请号：KR1020160021344
申请日：2016-02-23
Applicant: 한국전자통신연구원
IPC: G01L1/18 , G01L1/22 , H01L21/768 , H01L21/56 , H01L21/3213
CPC classification number: G01L9/0054 , G01L9/0045
Abstract: 그의내부에캐비티를갖는기판, 상기기판내에배치되고, 상기캐비티를둘러싸는격벽, 상기기판의상기상면상에배치되고, 상기캐비티의상단을덮는기판절연층, 상기기판절연층상에배치되는감지부, 및상기기판절연층상에배치되어상기감지부를덮는봉지층을포함하는압력센서를제공하되, 상기캐비티는상기기판의상면으로부터하면을향하여형성되고, 상기격벽은상기캐비티에의해노출되는내측벽을갖고, 상기감지부의적어도일부는평면적으로상기캐비티와중첩될수 있다.
Abstract translation: 具有在其内部的腔室的基板，布置在基板上，围绕空腔，所述分隔壁设置在基板服装蒸汽的一侧，覆盖空腔层的顶部的绝缘基板，感测被布置在所述衬底绝缘层部分上， 和设置在基底绝缘层上，但提供了一个压力传感器，其包括覆盖所述检测的密封层，该空腔朝向如果从衬底的上表面，所述分隔壁具有由空腔露出的内壁上形成 在平面图中，感测部分的至少一部分可以与空腔重叠。
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公开(公告)号：KR1020110067241A
公开(公告)日：2011-06-22
申请号：KR1020090123750
申请日：2009-12-14
Applicant: 한국전자통신연구원
Inventor： 제창한
IPC: G01P15/125 , G01P15/08
CPC classification number: G01P15/125
Abstract: PURPOSE: A vertical accelerometer is provided to enhance sensitivity of a vertical capacitance type acceleration sensor by improving a structure thereof. CONSTITUTION: A vertical accelerometer includes a substrate, a sensing mass(202), and a plurality of unit vertical accelerometers. The sensing mass is arranged on the substrate to be rotated by the acceleration. The unit vertical accelerometers have sensing electrodes formed at the sensing mass. The unit vertical accelerometers come in contact with the sensing electrodes. The unit vertical accelerometers detect the acceleration through a change of capacitance according to a change of an overlapped area between the sensing electrodes. The sensing mass is connected to the substrate by using a supporting spring.
Abstract translation: 目的：提供垂直加速度计，以通过改进其结构来提高垂直电容式加速度传感器的灵敏度。 构成：垂直加速度计包括基板，传感块（202）和多个单元垂直加速度计。 感测质量被布置在基板上以通过加速度旋转。 单元垂直加速度计具有形成在感测质量处的感测电极。 单元垂直加速度计与感测电极接触。 单位垂直加速度计根据感测电极之间的重叠区域的变化通过电容变化来检测加速度。 感测质量通过使用支撑弹簧连接到基底。
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公开(公告)号：KR100964970B1
公开(公告)日：2010-06-21
申请号：KR1020070082558
申请日：2007-08-17
Applicant: 한국전자통신연구원
IPC: B81B7/00 , H01L21/304 , B81C1/00
CPC classification number: B81B3/001 , B81C2201/115
Abstract: 본 발명은 3 차원 멤즈 미세구조체를 구비하는 멤즈 소자가 구조체 기판 또는 건조판에 고착되는 것을 방지하는 장치에 관한 것으로, 더욱 상세하게는 미세구조체와 구조체 기판 사이에 존재하는 세척액을 제거하면서 발생하는 표면장력으로 미세구조체가 기판에 고착되는 현상을 방지하기 위해 건조판; 및 세척액 제거를 위해 상부에 위치하는 미세구조체로부터 흘러나오는 세척액이 배출되도록 상기 건조판 상부 면에 소정의 높이로 복수 개 형성되는 미세돌기를 포함하는 3 차원 멤즈 미세구조체의 고착방지를 위한 부양 장치에 관한 것이다.
멤즈(MEMS), 미세구조체, 세척액, 고착방지-
公开(公告)号：KR1020090022152A
公开(公告)日：2009-03-04
申请号：KR1020070087256
申请日：2007-08-29
Applicant: 한국전자통신연구원
Abstract: A 3D angle of inclination computing circuit is provided to measure 3D angle of inclination by using X, Y, Z vibration sensors, X, Y, Z place value acquisition units and an angle of inclination operation unit. A 3D angle of inclination computing circuit comprises the X, Y, Z vibration sensors(110,120,130) diversifying the electrostatic capacity corresponding to the X, Y, Z according to three dimensional position of a measured plane about the reference surface; X, Y, Z position value acquisition units(210,220,230) obtaining the X, Y, Z position value corresponded to the X, Y, Z electrostatic capacity; and an angle of inclination operation unit(300) computing the angle of inclination of the measured plate about the reference surface.
Abstract translation: 提供三维倾角计算电路，通过使用X，Y，Z振动传感器，X，Y，Z位置值采集单元和倾角操作单元来测量三维倾斜角。 3D倾角计算电路包括X，Y，Z振动传感器（110,120,130），根据测量平面围绕参考表面的三维位置使对应于X，Y，Z的静电电容多样化; X，Y，Z位置值获取单元（210,220,230）获得对应于X，Y，Z静电容量的X，Y，Z位置值; 并且倾斜角度操作单元（300）计算测量板围绕参考表面的倾斜角度。
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Patent Agency Ranking
公开(公告)号：KR1020080052183A
公开(公告)日：2008-06-11
申请号：KR1020070043804
申请日：2007-05-04
Applicant: 한국전자통신연구원
IPC: G01P3/483 , G01P15/125
CPC classification number: G01P15/125 , G01P15/0802
Abstract: A capacitive accelerometer is provided to eliminate or reduce largely performance difference in a manufacturing process by keeping the gap between sensing electrodes very narrow. A sensing mass(210) is positioned apart from an upper surface of a substrate(200). The sensing mass includes a main body, a supporting spring, and a sensing electrode. A supporting plate(220) is formed to couple the sensing mass with the substrate. A reference electrode(232) is adjacent to the sensing electrode and is moved in a direction getting near to or a direction getting away from the sensing electrode. A driving unit(240) caused a movement of the reference electrode. A stopper(236) is formed to stop the movement of the reference electrode.
Abstract translation: 提供电容加速度计以通过保持感测电极之间的间隙非常窄而消除或降低制造过程中的很大程度的性能差异。 感测质量块（210）定位成离开衬底（200）的上表面。 感测质量包括主体，支撑弹簧和感测电极。 形成支撑板（220）以将传感块与衬底相耦合。 参考电极（232）与感测电极相邻，并且在接近或远离感测电极的方向上移动。 驱动单元（240）引起参考电极的移动。 形成止动件（236）以停止参考电极的移动。
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公开(公告)号：KR1020160025679A
公开(公告)日：2016-03-09
申请号：KR1020140112397
申请日：2014-08-27
Applicant: 한국전자통신연구원
Abstract: 본발명은센서패키지를제공한다. 센서패키지는하우징, 상기하우징내에위치하는회로부및 센서부, 상기하우징상에위치하고상기회로부및 상기센서부와연결되는전극및 상기하우징과결합하여상기센서부를상기하우징내에실장하는공간인탄성부를제공하는덮개를포함하되, 상기센서부를덮도록상기탄성부내에비전도성탄성물질제공된다.
Abstract translation: 提供传感器封装。 传感器封装包括：壳体; 电路部分和位于壳体内部的传感器部分; 以及盖，其位于所述壳体上并且联接到所述壳体，以及连接到所述电路部分和所述传感器部分的电极，以提供弹性部分，所述弹性部分是将所述传感器部分嵌入所述壳体中的空间，其中， 导电弹性材料覆盖传感器部分。 因此，本发明增加了传递到传感器部分的信号的灵敏度。
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公开(公告)号：KR101283683B1
公开(公告)日：2013-07-08
申请号：KR1020090123750
申请日：2009-12-14
Applicant: 한국전자통신연구원
Inventor： 제창한
IPC: G01P15/125 , G01P15/08
CPC classification number: G01P15/125
Abstract: 본 발명은 기판에 수직방향으로 작용하는 가속도를 측정하기 위한 미세가공 수직방향가속도계의 감도를 향상시키기 위한 구조에 관한 것이다. 본 발명의 실시예에 따른 수직축 방향 가속도계는 기판, 및 기판에 수직방향으로 작용하는 가속도에 의해 회전운동 가능하도록 기판에 배치되는 감지 질량체와 감지 질량체에 형성된 감지 전극을 가지는 복수개의 단위 수직축 가속도계를 포함하고, 복수개의 단위 수직축 가속도계를 감지 전극이 맞닿도록 마련하여 맞닿는 감지 전극간의 중첩되는 면적이 변함에 따른 정전용량의 변화를 통해서 가속도를 검출한다.
멤즈(MEMS), 미세구조체, 가속도계, 수직방향, Z축, 비대칭-
公开(公告)号：KR1020120061422A
公开(公告)日：2012-06-13
申请号：KR1020100122738
申请日：2010-12-03
Applicant: 한국전자통신연구원
IPC: H04R19/04
CPC classification number: H04R19/005 , H04R1/222 , H04R19/04 , H04R31/00
Abstract: PURPOSE: A MEMS(Micro-Electro-Mechanical Systems) microphone is provided to improve frequency response characteristics by eliminating attenuation due to air focused on a central portion of a vibration plate through a center exhaust hole formed on the vibration plate of a capacitance type MEMS microphone. CONSTITUTION: A capacitance type MEMS(Micro-Electro-Mechanical Systems) microphone includes a substrate(211) and an acoustic chamber(212) formed through the processing of the substrate. The capacitance type MEMS microphone includes a bottom electrode(221) formed on the acoustic chamber and an exhaust hole(222) formed in the bottom electrode into a predetermined constant pattern. The capacitance type MEMS microphone includes an bottom electrode support supporting the bottom electrode and a vibration plate(231) forming an air layer while being spaced from the bottom electrode at a constant interval. The capacitance type MEMS microphone includes a vibration plate support stand(233) attaching the vibration plate to the substrate and a vibration plate exhaust hole(232) formed in the center of the vibration plate.
Abstract translation: 目的：提供一种MEMS（微机电系统）麦克风，以通过消除通过形成在电容式MEMS的振动板上的中心排气孔将聚焦在振动板的中心部分上的空气消除的衰减消除频率响应特性 麦克风。 构成：电容型MEMS（微电子机械系统）麦克风包括通过基板的处理形成的基板（211）和声室（212）。 电容型MEMS麦克风包括形成在声学室上的底部电极（221）和形成在底部电极中的预定恒定图案的排气孔（222）。 电容型MEMS麦克风包括支撑底部电极的底部电极支撑件和形成空气层的振动板（231），同时以一定间隔与底部电极间隔开。 电容型MEMS麦克风包括将振动板附接到基板的振动板支撑台（233）和形成在振动板的中心的振动板排出孔（232）。
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公开(公告)号：KR1020090058731A
公开(公告)日：2009-06-10
申请号：KR1020070125467
申请日：2007-12-05
Applicant: 한국전자통신연구원
IPC: H01L29/84
CPC classification number: G01L9/0042 , Y10T29/42 , Y10T29/49
Abstract: A micro piezoresistive pressure sensor and a manufacturing method thereof are provided to simplify a manufacturing process by forming a semiconductor integrated circuit for processing a sensing signal and a pressure sensor structure in one silicon board. A micro piezoresistive pressure sensor includes a silicon board(100), a cavity(110), a membrane layer(120) and a sensing layer(130). The cavity is buried in the silicon board. The membrane layer has a laminate structure of a multi layer and seals the cavity. The sensing layer is formed in the upper part of the membrane layer. One or more semiconductor integrated circuits are positioned in the part except for the cavity of the silicon board.
Abstract translation: 提供一种微压阻式压力传感器及其制造方法，以通过形成用于处理一个硅板中的感测信号的半导体集成电路和压力传感器结构来简化制造过程。 微压阻压力传感器包括硅板（100），空腔（110），膜层（120）和感测层（130）。 空腔埋在硅板上。 膜层具有多层的层叠结构并且密封空腔。 传感层形成在膜层的上部。 一个或多个半导体集成电路位于除了硅板的空腔之外的部分中。
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