公开(公告)号：JPH1127222A

公开(公告)日：1999-01-29

申请号：JP17819697

申请日：1997-07-03

Applicant: CANON KK

Inventor： SUGATA MASAO ,  NAGASAWA KENICHI ,  FUKUMOTO TORU ,  UCHIYAMA HARUO ,  ROTSUPONGI NOBUKUNI

IPC: H04N7/08 ,  H04B1/16 ,  H04H20/00 ,  H04H20/28 ,  H04H20/95 ,  H04H60/13 ,  H04N7/081 ,  H04H1/00

Abstract: PROBLEM TO BE SOLVED: To perform multiple transmission of data that is easily handled by a general processor to a broadcasting signal with high reliability by configuring error detection or a correction code to a part of a header in distributed information with higher redundancy in comparison with an entity. SOLUTION: Image memory 4, an error correction code(ECC) encoding circuit 9, etc., are connected to a bus B, and a personal computer(PC) 3 can receive the exchange of data from the bus B. Digital data is converted into a binary analog signal through a D/A converter 14 via the bus B. Further, the analog signal is inputted to a balanced modulator 15 and distributed into higher frequency in comparison with each audio signal and a pilot signal by performing frequency conversion with 76 kHz carrier, and a multiplexing circuit 17 performs frequency-multiplexing with them. The multiple signal is standardized for data for a well-known character broadcasting, and data of an HTML format that is used in WWW is transmitted as a broadcast wave by using the multiple signal.

公开(公告)号：JP2518833B2

公开(公告)日：1996-07-31

申请号：JP1614887

申请日：1987-01-28

Applicant: CANON KK

Inventor： TSUKAMOTO TAKEO ,  SHIMIZU AKIRA ,  SUZUKI AKIRA ,  SUGATA MASAO ,  SHIMODA ISAMU ,  OKUNUKI MASAHIKO

IPC: H01J37/073 ,  H01J1/30 ,  H01J1/308 ,  H01J3/34 ,  H01J37/06 ,  H01J37/147 ,  H01L21/027 ,  H01L21/30

公开(公告)号：JPH06163591A

公开(公告)日：1994-06-10

申请号：JP18504393

申请日：1993-07-27

Applicant: CANON KK

Inventor： OSADA YOSHIYUKI ,  SUGATA MASAO ,  HATANAKA KATSUNORI ,  OKUBO YUKITOSHI ,  NAKAGIRI TAKASHI

IPC: H01L21/205 ,  H01L21/336 ,  H01L29/78 ,  H01L29/786 ,  H01L29/784

Abstract: PURPOSE:To achieve an improved ohmic contact between an electrode and an amorphous semiconductor layer by introducing a specific gas into a deposition chamber and then forming an n layer by inducing glow discharge. CONSTITUTION:A gate electrode 101, an insulation layer 104, and a semiconductor layer 105 consisting of hydrogenation or fluorine amorphous silicon are formed on a substrate 106 by successively laminating them. Glow discharge is induced on a surface 108 of the semiconductor layer 105 without exposing a surface 108 to atmosphere or oxygen and then introducing a gas containing hydrogen atom and phosphor atom or arsenic atom and a gas containing silicon atom which is dilluted by hydrogen gas into a deposition chamber, thus forming a first n layer 107-1 and a second n layer 107-2. Since an n layer 107 is formed in a clean state immediately after formation of a layer in the semiconductor surface 108 in this manner, an improved ohmic contact is formed at the interface between the semiconductor layer 105 and the n layer 107, thus obtaining improved transistor characteristics.

公开(公告)号：JPH0546932B2

公开(公告)日：1993-07-15

申请号：JP12293784

申请日：1984-06-16

Applicant: CANON KK

Inventor： OOKUBO YUKITOSHI ,  OSADA YOSHUKI ,  KOMATA TOMOJI ,  SUGATA MASAO

IPC: H01L29/78 ,  G02F1/1335 ,  G02F1/136 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/786 ,  H01L29/784

公开(公告)号：JPH0570939A

公开(公告)日：1993-03-23

申请号：JP23178791

申请日：1991-09-11

Applicant: CANON KK

Inventor： SUGATA MASAO

IPC: C23C14/34 ,  C23C16/20

Abstract: PURPOSE:To produce a target for sputtering capable of efficiently radiating the heat of the target material heated to a high temp. and releasing no impurities from the target material. CONSTITUTION:A target layer 7 is directly laminated on one side of a backing plate 6 to produce a target 5 for sputtering. The target layer 7 is made of at least one kind of metal selected among Al, W and Au. The backing plate 6 is made of oxygen-free copper. An underlayer may be formed on one side of the backing plate 6 before laminating the target layer 7.

公开(公告)号：JPH03182758A

公开(公告)日：1991-08-08

申请号：JP32137289

申请日：1989-12-13

Applicant: CANON KK

Inventor： SUGATA MASAO ,  KATO HIDEO ,  IKEDA TSUTOMU

IPC: G03F7/38 ,  C08J7/00 ,  H01L21/027

Abstract: PURPOSE:To form high-sensitivity rugged patterns by separating a stage for irradiating a film consisting of a high-molecular material with an energy beam and a stage for heating the film so as to avert the abrasion of the high- molecular film. CONSTITUTION:The high-molecular material consisting of particularly halogenated hydrocarbon chains is used in terms of the easy dissociation of chemical bonds by the energy beam and the durability, etc., of the formed rugged patterns. The film 3 consisting of the high-molecular material is irradiated with the energy beam 4 and is heated in an inert atmosphere. The energy quantity of this energy beam 4 is then suppressed to the extent of not causing the abrasion of the high-molecular film 3 and of preventing the arrival of the energy beam at the substrate surface at the time of irradiating the high- molecular film 3 with the energy beam 4. The reflection of the energy beam on a substrate 1 and the release of secondary electrons are thereby suppressed and the degradation in pattern resolution and the damage of the substrate itself are averted. The rugged patterns of the high sensitivity and high resolution are stably obtd. with good reproducibility.

公开(公告)号：JPH03182757A

公开(公告)日：1991-08-08

申请号：JP32137189

申请日：1989-12-13

Applicant: CANON KK

Inventor： SUGATA MASAO ,  KATO HIDEO ,  IKEDA TSUTOMU

IPC: G03F7/38 ,  H01L21/027

Abstract: PURPOSE:To form high-sensitivity rugged patterns by separating a stage for irradiating a film consisting of a high-molecular material with an energy beam and a stage for heating the film so as to avert the abrasion of the high- molecular film. CONSTITUTION:The high-molecular material consisting of particularly halogenated hydrocarbon chains is used in terms of the easy dissociation of chemical bonds by the energy beam and the durability, etc., of the formed rugged patterns. The film 3 consisting of the high-molecular material is irradiated with the energy beam 4 and is heated in an oxidative atmosphere. The energy quantity of this energy beam 4 is then suppressed to the extent of not causing the abrasion of the high-molecular film 3 at the time of irradiating the high-molecular film 3 with the energy beam 4. The reflection of the energy beam on a substrate 1 and the release of secondary electrons are thereby suppressed and the degradation in pattern resolution and the damage of the substrate itself are averted. The rugged patterns of the high sensitivity and high resolution are stably obtd. with good reproducibility.

公开(公告)号：JPH03105912A

公开(公告)日：1991-05-02

申请号：JP24192889

申请日：1989-09-20

Applicant: CANON KK

Inventor： SUGATA MASAO ,  KATO HIDEO ,  IKEDA TSUTOMU

IPC: G03F1/22 ,  G03F1/60 ,  G03F7/20 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To prevent shifting of a resist pattern by using a material composed mainly of aluminum nitride containing silicon as the material for forming an X-ray transmissive film. CONSTITUTION:The X-ray transmissive film of an X-ray mask blank or X-ray mask structure body is formed mainly of aluminum nitride containing silicon. The structure body is a laminated body of a ring frame 6, silicon wafer 1, and an aluminum nitride film 3 containing silicon. When the aluminum nitride 3 containing silicon is used in such way, the short-wavelength component of X rays which passes through the X-ray transmissive film and generates secondary electrons when the component reaches the silicon wafer can be reduced sharply and the shifting of a resist pattern due to discharged secondary electrons from the silicon wafer can be suppressed. Therefore, high-resolution lithography becomes possible.

公开(公告)号：JPH0212808A

公开(公告)日：1990-01-17

申请号：JP16071388

申请日：1988-06-30

Applicant: CANON KK

Inventor： IKEDA TSUTOMU ,  SUGATA MASAO ,  KATO HIDEO

IPC: G03F1/68 ,  G03F1/80 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To easily and quickly separate a flat plate from a mask film body when the mask film body formed on the flat plate is transferred to a holder, by providing a metal layer between the mask film body and the flat plate. CONSTITUTION:After a mask film body 6 composed of X-ray transmitting layers 3, 5 and an X-ray absorber 4 is formed on a flat plate 1, the mask film body 6 is fixed on a retaining body 7, the flat plate 1 is separated from the mask body 6, and the mask film body 6 is transferred to the retaining body 7 to form a mask for X-ray lithography. At this time, a metal layer 2 is arranged between the mask film body 6 and the flat plate 1, thereby facilitating the separation of the mask body 6 and the flat plate 1. For example, the above metal layer 2 contains one or more kinds of gold, silver, tin, platinum, palladium and rhodium, and is formed by using vacuum heating deposition method, sputtering method, etc. After the metal layer 2 is dipped in solvent, and the flat plate 1 and the metal layer 2 are separated, the metal layer 2 is eliminated by a method such as dissolving elimination and plasma etching.

公开(公告)号：JPH01163750A

公开(公告)日：1989-06-28

申请号：JP23750187

申请日：1987-09-24

Applicant: CANON KK

Inventor： SUGATA MASAO ,  DEN TORU ,  TAKEUCHI TATSUO ,  ITO SUSUMU ,  SATOMURA HIROSHI ,  HIRABAYASHI KEIJI ,  OGUCHI YOSHIHIRO ,  IKOMA KEIKO ,  MARUYAMA AKIO ,  KURIHARA NORIKO ,  SAITO KEISHI ,  OSABE KUNIJI

IPC: G03G5/08 ,  G03G5/082

Abstract: PURPOSE:To increase the chargeability of a photosensitive body and permitting formation of a picture image with less exposure energy by forming a photoconducting layer with a specified carbonaceous film. CONSTITUTION:A photoconductive layer is formed with a carbonaceous film (A) comprising C atom in the main body of the matrix. The film A is preferred to contain at least 1atom. among elements of the IIIA group (e.g., B), and the group VA (e.g. N) of the periodic table. The distribution of concn. of the atom is preferred that it is higher at a substrate side than at other parts. It is desir able that =1.5eV, the electroconductivity is pref. /OMEGA .cm , and the relative intensity of the Raman spectrum at 1,333cm is pref. in a specified range. The film A may be obtd. by the CVD process using electric discharge to raw material gas (e.g. C2H2).