公开(公告)号：JPS6255650A

公开(公告)日：1987-03-11

申请号：JP19633485

申请日：1985-09-05

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： TODOKORO YOSHIHIRO

IPC: G03C5/08 ,  G03F7/00 ,  G03F7/20 ,  G03F7/26 ,  H01L21/027

Abstract: PURPOSE:To obtain a resin pattern for optical parts having excellent heat and chemical resistance by forming a mask pattern of a prescribed shape consisting of a resin which absorbs exposing wavelength on a substrate and forming a thin photosensitive resin film layer having curability with the exposing wavelength onto the substrate and resin mask pattern, then exposing the same from the substrate side. CONSTITUTION:A resist pattern 12 is formed by using resist having high absorption to far-UV light onto the quartz substrate 11. A photoresist is coated to 0.5mum thickness on the substrate and is subjected to 30min of prebaking at 85 deg.C. The resist is exposed at 100mJ by using far-UV light of 430nm wavelength and is developed for 1min by using a developing soln., by which the desired resin pattern is completed. A photosensitive Si resin 13 such as, for example, phenyl Si resin, which does not have a thermosetting property is coated on the formed resist pattern 12 to 2mum thickness. The resin is further subjected to far-UV light exposing from the substrate 11 side by using a mask aligner PLA521FA.

公开(公告)号：JPS6237932A

公开(公告)日：1987-02-18

申请号：JP17796185

申请日：1985-08-13

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： TODOKORO YOSHIHIRO ,  WATANABE HISASHI

IPC: H01L21/30 ,  G03F7/20 ,  G03F7/38 ,  H01L21/027

Abstract: PURPOSE:To form a very minute resist pattern, by forming a specified resist pattern having a specified shape on a substrate, projecting plasma including F or Cl, etching the resist with O2 gas in an anisotropic method, and thereafter immersing the pattern in an organic solution. CONSTITUTION:A resist pattern 2 is formed on a semiconductor substrate 1. Plasma is projected on the resist pattern 2 by using a cylindrical plasma etching device and a gas comprising C2HCl3/5% O2 at 0.4Torr for 1min at plasma generating power of 15W. Then, by using a reactive ion etching device, etching is performed with O2 gas, and the surface of the resist pattern 2 is removed by 0.1mum or more in an anisotropic mode. During this period, the etching is performed for 1min under the conditions of pressure of 15mTorr, RF power of 175W and O2 gas flow rate of 40secM. Finally the pattern is immersed (5) in isoamyl acetate for 10sec, and a very minute resist pattern 4, whose pattern width is 0.1mum, is formed.

公开(公告)号：JPS6237931A

公开(公告)日：1987-02-18

申请号：JP17716885

申请日：1985-08-12

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： YAMASHITA HIROSHI ,  TODOKORO YOSHIHIRO

IPC: H01L21/30 ,  H01L21/027

Abstract: PURPOSE:To improve the roundness of the end part of a pattern, by exposing polyhexafluorobutyl methacrylate resist to an electron beam, and developing the resist with a developing liquid, in which three liquids of isopropyl alcohol, ethanol and isobutyl alcohol are mixed. CONSTITUTION:Polyhexafluorobutyl methacrylate resist is applied on an Si wafer to a thickness of 4,000Angstrom by spin coating (1). Prebaking is performed at 140 deg.C for 20min (2). Then a pattern is scribed with electron beam exposure at the amount of exposure of 1.6-2.4muC/cm . Then development is performed for 3min with a developing liquid, in which isopropyl alcohol, ethanol and isobutyl alcohol are mixed at a rate of 4:1:1. Thus a specified resist pattern is obtained. As a result, a gamma value becomes as low as 10 or less, and the roundness at the end of the pattern is improved.

公开(公告)号：JPS6197832A

公开(公告)日：1986-05-16

申请号：JP22001384

申请日：1984-10-18

Applicant: Matsushita Electronics Corp

Inventor： TAKASU YASUHIRO ,  TODOKORO YOSHIHIRO

IPC: G03F7/20 ,  H01L21/027 ,  H01L21/30

CPC classification number: H01L21/30

Abstract: PURPOSE:To enable repetition transcription of high throughput and small shift and small obscurity by a method wherein an X-ray reflector which determines the exposure area is installed at an angle whereby X-ray beams are totally reflected, in an X-ray beam radiated from the target. CONSTITUTION:A target 11 is irradiated with electron beams 9 emitted from an electron gun 8, and soft X rays 12 of wavelength 8.34Angstrom generate. Part of this X-ray is made incident into the plane of a total reflection plate 16, and the other is adsorbed by a disc-shaped absorption plate 17. The total reflection plate 16 is installed 30cm below the target so as to be a total reflection plate 18 for the soft X-ray emitted from the right end 14 of an electron beam spot. For example, totally reflected soft X ray comes into a mask 22 with an angle 21 of 3.18 deg. to the vertical direction. With respect to the reflected light at each position on the total reflection plate 16, the total reflected light at the lower end 23 of the total reflection plate 16 spreads by an angle 24 of 3.53 deg. to the vertical direction. Since soft X rays due to total reflection thus spread only outward, obscurity caused by the soft X ray irradiating the mask does not generate, but only the shift at the mask ends generates.

Abstract translation: 目的：为了能够通过以下方法实现高通量和小偏移和小的不透明度的重复转录，其中确定曝光区域的X射线反射器以X射线束被全反射的角度安装在辐射的X射线束中 从目标。 构成：用电子枪8发射的电子束9照射目标物11，产生波长8.34埃的软X射线12。 该X射线的一部分入射到全反射板16的平面中，另一部分被盘形吸收板17吸附。全反射板16安装在靶下方30cm处，总计 用于从电子束点的右端14发射的软X射线的反射板18。 例如，全反射的软X射线进入具有3.18度的角度21的掩模22。 到垂直方向。 对于全反射板16上的每个位置处的反射光，全反射板16的下端23处的总反射光扩展了3.53度的角度24。 到垂直方向。 由于由于全反射而产生的软X射线仅向外扩散，所以不产生由照射掩模的软X射线引起的晦暗，而仅产生掩模端的偏移。

公开(公告)号：JPS6116521A

公开(公告)日：1986-01-24

申请号：JP13831184

申请日：1984-07-03

Applicant: Matsushita Electronics Corp

Inventor： YAMAO TATSUHIKO ,  TAKASU YASUHIRO ,  TODOKORO YOSHIHIRO

IPC: H01L21/30 ,  B05D3/06 ,  G03F7/30 ,  H01L21/027

CPC classification number: H01L21/0271

Abstract: PURPOSE:To remove a resist after exposure easily at room temperature without utilizing a plasma ashing device by a method wherein, after irradiating a negative resist pattern on a substrate by rays with specific wavelength, the substrate is immersed in an acid or organic solvent. CONSTITUTION:A masking substrate 1 is coated with a chrome film 2 and negative resist 3 while the negative resist 3 is exposed to electric beams and developed to form a resist pattern 5. Then a chrome pattern 6 is formed utilizing the pattern 5 as a mask. Next the resist pattern 5 is removed by means of irradiating it with far ultraviolet rays 7 with central wavelength not exceeding 300nm for 10min and then immersing it in concentrated sulfuric acid at room temperature for 3min. The irradiation time with far ultraviolet rays required for removing resist may be shortened by means of raising the substrate temperature in case of irradiating the substrate with far ultraviolet rays. In other words, the irradiation time with far ultraviolet rays takes 10min when the substrate temperature is at room temperature but if it is raised up to 200 deg.C, 1min will suffice for the irradiation.

Abstract translation: 目的：在室温下容易地除去抗蚀剂后，不用等离子体灰化装置，其中通过具有特定波长的射线照射基片上的负光刻胶图案后，将基片浸入酸或有机溶剂中。 构成：掩蔽基板1涂覆有铬膜2和负性抗蚀剂3，同时将负性抗蚀剂3暴露于电子束并显影以形成抗蚀剂图案5.然后，使用图案5作为掩模形成铬图案6 。 接下来，通过用中心波长不超过300nm的远紫外线7照射10分钟，然后在室温下将其浸入浓硫酸中3分钟，去除抗蚀图案5。 在用紫外线照射基板的情况下，通过提高基板温度，可以缩短去除抗蚀剂所需的远紫外线的照射时间。 换句话说，当基板温度为室温时，远紫外线的照射时间为10分钟，但如果升高到200摄氏度，则1分钟就足以照射。

公开(公告)号：JPS60207339A

公开(公告)日：1985-10-18

申请号：JP6407484

申请日：1984-03-30

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： TODOKORO YOSHIHIRO

IPC: H01L21/302 ,  H01L21/3065

Abstract: PURPOSE:To form an ultramicroscopic pattern by performing a light exposure and a simple process by a method wherein an inorganic material thin film is formed on the prescribed pattern of the organic resin thin film located on a substrate, and after the second organic resin thin film has been formed, the inorganic material thin film contacting the side wall part of the pattern is removed. CONSTITUTION:A photoresist of 1mum in thickness is coated on a semiconductor substrate 1, and after the above has been prebaked at the temperature of 80 deg.C for 20min, a prescribed pattern 2 is formed by performing a light exposing method and a developing process, and a post baking is performed at the temperature of 150 deg.C for 20min. Then, an Si3N4 film 3 of 1,000Angstrom in thickness is formed using a prasma CVD device, a resist 4 of 3mum in thickness is coated thereon, a part of the resist 4 is removed, the surface of the film 3 located on a protruded part is exposed, and a residual film 5 of the resist is formed on the recessed part located on the other part. Then, the film 3 on the upper surface and the side wall part of the pattern 2 is removed using the buffer etchant of HF/ NH4F=1/5, and an ultramicroscopic resist aperture part 6 is formed.

公开(公告)号：JPS60110124A

公开(公告)日：1985-06-15

申请号：JP21826783

申请日：1983-11-18

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： YAMAO TATSUHIKO ,  OOKUMA TOORU ,  TODOKORO YOSHIHIRO

IPC: G03F7/40 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065

Abstract: PURPOSE:To easily realize high precision dry etching by executing the dry etching after irradiating a resist pattern formed on a substrate with the far ultraviolet ray of particular wavelength for the heat treatment. CONSTITUTION:The resist pattern of predetermined shape formed on a substrate is irradiated with the far ultraviolet ray with wavelength of 300nm for the heat processing up to 200 deg.C or higher. Thereafter, the substrate is dry etched with the resist pattern used as the mask. For example, after an SiO2 film 2 is formed on an Si substrate 1, a resist pattern 3 is formed. The resist pattern is then irradiated with the far ultraviolet ray 4 with peak wavelength of 300nm or less using the Xe-Hg lamp. Moreover, after the heat treatment for 30min at 270 deg.C under the N2 ambient, the reactive ion etching is carried out using the C3F8 gas for the patterning of SiO2 film 2.

公开(公告)号：JPS6086828A

公开(公告)日：1985-05-16

申请号：JP19568583

申请日：1983-10-19

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： YAMASHITA HIROSHI ,  TODOKORO YOSHIHIRO

IPC: G03F7/20 ,  G03F7/16 ,  H01L21/027

Abstract: PURPOSE:To enlarge the range of the adequate quantity of exposure by applying a diazo type photo-resist on a substrate, pre-baking the resist and drawing and forming a pattern through the exposure of electron beams. CONSTITUTION:A positive type photo-resist is applied on a wafer or a mask in thickness of 1.2mum by the number of revolution of 5,000rpm, and pre-baked for 20min at 65 deg.C. A predetermined pattern is exposed by the quantity of exposure of 38muc/cm , and developed at room temperature. A mixed liquid acquired by diluting an inorganic alkali developer up to sextuple with water is used as a developer. Accordingly, the range of the adequate quantity of exposure is enlarged and the repetitive patterns of line patterns and space patterns having excellent sectional shapes can be obtained when the temperature of pre-baking is 70 deg.C or lower.

公开(公告)号：JPS6057926A

公开(公告)日：1985-04-03

申请号：JP16699883

申请日：1983-09-09

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： TODOKORO YOSHIHIRO

IPC: G03F7/20 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To draw a pattern, which hardly displays a proximity effect and has high accuracy, in a short drawing time by drawing the pattern while varying acceleration voltage in response to the pattern. CONSTITUTION:A pattern is drawn while varying acceleration voltage in response to the size of the pattern. The pattern such as a pattern 1 (20mumX20mum) having size of not less than 1mum width is drawn is drawn by acceleration voltage of 10kv, and the pattern such as a pattern 2 (0.5mumX30mum) having size of less than 1mum width is drawn by using acceleration voltage of 80kv. Accordingly, exposure time may be reduced to one fourth times or less as long both the pattern 1 and the pattern 2 are exposed by 80kv, and the fine pattern in 0.5mum width can be formed by sufficient resolution because it is drawn by acceleration voltage of 80kv.

公开(公告)号：JPS6020512A

公开(公告)日：1985-02-01

申请号：JP12836983

申请日：1983-07-13

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： TODOKORO YOSHIHIRO

IPC: G03F7/20 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To shorten exposure time required for protecting a register mark for positioning by forming a negative type resist on a positive type resist, exposing a predetermined section containing the register mark for positioning to electron beams and exposing the whole to electron beams so that the peripheral section of the predetermined section is reversely rotated to a frame shape and the positive type resist to a negative shape. CONSTITUTION:PMMA8 is applied on a semiconductor substrate 7 as a positive type electron beam resist, a pre-baking is executed, and polystyrene 9 is applied on the PMMA as a negative type resist, and pre-baking is executed. A stepped mark 2 is detected, predetermined patterns 6 for formation are exposed to electron beams while being positioned, and a prescribed pattern 4 containing the mark is exposed while a peripheral section 5 is exposed to electron beams, thus forming the negative contrarotating section 11 of the positive type resist. A negative type pattern 10 is obtained by developing polystyrene as the negative type resist 9. The desired patterns 12 of the PMMA8 are acquired by developing a PMMA resist.