公开(公告)号：JP2001156137A

公开(公告)日：2001-06-08

申请号：JP33594099

申请日：1999-11-26

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： YAMASHITA HIROSHI

IPC: G01B15/02 ,  G01N1/28 ,  G01N1/32 ,  G01N23/04 ,  G01N33/00 ,  H01L21/66

Abstract: PROBLEM TO BE SOLVED: To solve the difficulty where since the conventional analysis method does not have a special resolution required for a two-dimensional or three- dimensional element analysis, it is difficult to measure impurity amount in a semiconductor in a fine part. SOLUTION: A silicon semiconductor substrate 13 is cut down as a first thin film, to a degree that its thickness can be observed by a transmission electronic microscope, and the first thin film is etched by the use of a mixture liquid composed of a hydrofluoric acid and a nitric acid, and a film thickness of a second thin film changes in correspondence to an impurity concentration distribution of a diffusion layer 19 in the silicon semiconductor substrate, and is measured by an equal thickness interference fringe observing method (c) by use of the transmission electronic microscope, and from the film thickness of the second thin film acquired by the equal thickness interference fringe observing method (c), the impurity concentration distribution of the diffusion layer 19 in the silicon semiconductor substrate is acquired.

公开(公告)号：JPH05121504A

公开(公告)日：1993-05-18

申请号：JP27813991

申请日：1991-10-25

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： YAMASHITA HIROSHI

IPC: H01L21/66

Abstract: PURPOSE:To easily identify the defective point of a semiconductor device by observing the defective point under an optical microscope and displaying the coordinate position of alignment formed of laser beam. CONSTITUTION:After the defect address of a semiconductor device 8 is observed under an optical microscope 1, the device 8 is moved to certain location by means of an X-Y axis scanning and driving device 9. Then the relative positional coordinates of the defect point are found from the position of alignment formed by irradiating the defect point with pulse beam from a laser light source 2 and the found cordinates are stored. The stored coordinates are transferred to a personal computer 12 through a signal transmission cable 11 and further transferred to an X-Y axis scan and drive controller 15 through a cable 13. Then the secondary electron image of the faulty point is observed under a scanning electron microscope 14 by calling the relative positional coordinates of the fault point. Since the detailed observation and composition analysis of the faulty point can be performed and the cause of the fault can be quickly fed back to the manufacturing process or each development process, the yield of the semiconductor device 8 can be stabilized or the development period of the device can be reduced.

公开(公告)号：JPH0471331B2

公开(公告)日：1992-11-13

申请号：JP22636184

申请日：1984-10-26

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： YAMASHITA HIROSHI ,  TODOKORO YOSHIHIRO

IPC: H01L21/027 ,  G03F7/20 ,  H01L21/30

公开(公告)号：JPS62234327A

公开(公告)日：1987-10-14

申请号：JP7857486

申请日：1986-04-04

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： YAMASHITA HIROSHI

IPC: G03F7/26 ,  G03C5/00 ,  G03F7/00 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To form a pattern having a sawtooth-shaped cross section by irradiating collimated far ultraviolet beams in the direction that the parallel plane of a semiconductor substrate crosses at right angles with the side surface of the pattern and from an oblique upper section and sensitizing and developing the section of a far ultraviolet beam resist not shielded by light. CONSTITUTION:A novolak group positive type photo-resist 2 is applied onto an Si substrate l, and pre-baked. The repetitive patterns of lines and spaces are drawn through electron-beam exposure, and developed by an alkali group developer, thus forming a pattern. A resist for far ultraviolet beam exposure is applied, a cylindrical type plasma etching device is used, PMMA is removed through plasma ashing, and collimated far ultraviolet beams are irradiated in the direction that the parallel plane of the substrate 1 crosses at right angles with the side surfaces of the repetitive patterns and from an oblique upper section. Far ultraviolet beams are shielded by the resist 2, only sections not exposed are left, pattern sections are removed through development, and only oblique patterns are shaped. Accordingly, A resist pattern with a sawtooth- shaped cross section can he formed.

公开(公告)号：JPS6276724A

公开(公告)日：1987-04-08

申请号：JP21706685

申请日：1985-09-30

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： NIKAWA HIDEO ,  YAMASHITA HIROSHI ,  TODOKORO YOSHIHIRO

IPC: G03F7/20 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To extend the dissolving range of an organic thin film by forming the film sensitively depending upon temperature by absorbing light on a substrate, and heat treating from low to high temperature in a plurality of stages. CONSTITUTION:A substrate 1 is coated with polyimide or polyimide silane resin thin film 2, treated at 140 deg.C for 20min, at 170 deg.C for 20min, coated with PMMA 3, and baked at 170 deg.C for 20min. A resist pattern 4 is formed by exposing and developing, the film 2 of the hole is treated with developer to form a pattern. Thus, the temperature dependency of the dissolving rate of polyimide or polyimide silane resin is alleviated by the heat treatments of several stages to be readily controlled, the available dissolving rate is extended, and a fine pattern is formed by a resist required to be prebaked at relatively high temperature like PMMA.

公开(公告)号：JPS6229134A

公开(公告)日：1987-02-07

申请号：JP16794385

申请日：1985-07-30

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： YAMASHITA HIROSHI ,  TODOKORO YOSHIHIRO

IPC: H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To enable fine patterns and large patterns to be drawn with high precision while cutting down the image drawing time by a method wherein patterns exceeding 1mum thick are exposed at specified exposure dosage and after they are developed, fine patterns are exposed at exposure dosage exceeding two times of specified dosage to be developed by a developer at resist resolving speed less than a specified value. CONSTITUTION:A silicon Si substrate 1 is coated with positive type electron beam resist PMMA2 0.5mum thick to be prebaked at 170 deg.C for 20min and then patterns 3 exceeding 1mum thick are exposed. Later the patterns exceeding 1mum thick are formed by developing methylisobutylketone (MIBK) at room temperature. Next the fine patterns are exposed by exposure dosage of 6.4X10muc/cm and then developed at room temperature for two minutes to form fine patterns with linear width of 0.1mum and vertical sectional profile. Through these procedures, patterns exceeding 1mum thick and fine patterns around 0.1mum thick can be formed with high precision within a short image drawing time.

公开(公告)号：JPH11183339A

公开(公告)日：1999-07-09

申请号：JP34896697

申请日：1997-12-18

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： YAMASHITA HIROSHI

IPC: G01N1/28

Abstract: PROBLEM TO BE SOLVED: To easily prepare a sample for a transmission electron microscope at a specific position. SOLUTION: A sample 1 is sliced by dicing saw machining. An electron beam is radiated near a specific observation position of the sample 1, and a reaction product 3 is deposited. The sample 1 is covered with a plasma polymerization film 4. A focused ion beam is scanned on the sample 1, and the specific observation position is spatter-etched to the thickness of 0.1 μm.

公开(公告)号：JPH0927527A

公开(公告)日：1997-01-28

申请号：JP17349695

申请日：1995-07-10

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： YAMASHITA HIROSHI

IPC: H01L21/66 ,  G01Q30/02 ,  G01Q60/10 ,  G01Q60/24 ,  G01Q60/46

Abstract: PROBLEM TO BE SOLVED: To easily detect a local defect by storing a semiconductor substrate in which an Al wiring is formed in the atmosphere of steam and immersing it in an alkaline solution and after that, electrically measuring the Al wiring. SOLUTION: After etching the Al wiring 2 of a test device 1 to form a wiring pattern, when it is stored in the atmosphere of steam and if residual chlorine exists in the surface of the Al wiring 2, it reacts to moisture to produce an aluminum hydroxide 4. When the test device 1 is immersed in an alkaline solution, the aluminum hydroxide 4 is dissolved in the alkaline solution because it is an amphoteric electrolyte, so that a defect 5 locally appears when after- corrosion is generated in the Al wiring. Accordingly, a degree of after-corrosion can be quantitatively evaluated by connecting the test device 1 to a measuring pad 3, making electrical measurement and evaluating the yield of the wiring, the change of the rise of the electric resistance of the Al wiring and an electromigration life.

公开(公告)号：JPH06267949A

公开(公告)日：1994-09-22

申请号：JP5379493

申请日：1993-03-15

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： YAMASHITA HIROSHI

IPC: H01L23/52 ,  H01L21/3205

Abstract: PURPOSE:To enhance the electromigration resistance of Al wiring in a semicon ductor device. CONSTITUTION:After the formation of an interlayer insulating film 2 directly on a silicon substrate 1 or through the intermediary of an insulating film, a conductive film is deposited on the interlayer insulating film 2 to be etched away for the formation of a wiring 3. Next, after heat-treating the wiring 3, a passivation film 4 is deposited on the wiring 3 to be heat-treated later. In such a constitution, the conductive film is formed by depositing an Al alloy film by argon sputtering process while keeping the silicon substrate 1 at the temperature of 250-350 deg.C thereby enabling the crystalline particle diameter of the Al alloy film to be enlarged while minimizing the Si nodule density.

公开(公告)号：JPH0621181A

公开(公告)日：1994-01-28

申请号：JP17805092

申请日：1992-07-06

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： YAMASHITA HIROSHI

IPC: H01L21/66

Abstract: PURPOSE:To simplify the observation of defects, i.e., pin-holes, of an insulating film on a polycrystalline silicon film such as a silicon dioxide film, a silicon oxide-nitride film or an aluminum oxide film. CONSTITUTION:A cell plate electrode 8 is composed of an impurity-doped polycrystalline silicon film formed by a depressurized CVD method. In order to remove the cell plate electrode 8 by etching, pottasium hydroxide solution is employed as alkali solution and a DRAM is dipped into it. If pin-holes exist in an insulating film 7 at that time, the polycrystalline silicon is etched by etchant penetrating through the defects.