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公开(公告)号：JP2009206533A
公开(公告)日：2009-09-10
申请号：JP2009146321
申请日：2009-06-19
Inventor： HASHIMOTO SHIGEKI , YANASHIMA KATSUNORI , IKEDA MASAO , NAKAJIMA HIROSHI
IPC: H01S5/343
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element using a nitride-based Group III-V compound semiconductor, which reduces the threshold current density without increasing the operation voltage practically.
SOLUTION: A p-type clad layer of a GaN-based semiconductor laser is configured by two or more semiconductor layers having different band gaps from one another, and a part of an active layer side of the p-type clad layer is configured by a semiconductor layer having a band gap greater than that of the other parts. Specifically, in the GaN-based semiconductor laser with an AlGaN/GaN/GaInN SCH structure, a p-type AlGaN clad layer 10 is configured of: a p-type Al
x1 Ga
1-x1 N layer 10a in contact with a p-type GaN optical waveguide layer 9; and a p-type Al
x2 Ga
1-x2 N layer 10b on the p-type Al
x1 Ga
1-x1 N layer 10a (here, 0≤x2Abstract translation: 要解决的问题：提供一种使用氮化物基III-V族化合物半导体的半导体发光元件，其在实际上不增加操作电压的情况下降低阈值电流密度。 解决方案：GaN基半导体激光器的p型覆盖层由具有彼此不同带隙的两个或更多个半导体层构成，并且p型覆层的有源层侧的一部分为 由具有比其它部分的带隙大的带隙的半导体层构成。 具体地，在具有AlGaN / GaN / GaInN SCH结构的GaN基半导体激光器中，p型AlGaN覆盖层10由p型AlGaN / 与p型GaN光波导层9接触的x1 / N层10a; 和p型Al
x1 1-x1 上的p型Al x2 Ga 1-x2 < / SB> N层10a（这里，0≤x2 -
82.发明专利Oxy-chalcogenide based thin film, method for growing the same, oxide semiconductor thin film method for growing the same, process for fabricating semiconductor device and semiconductor device 审中-公开基于氧化硅的薄膜，其生长方法，其氧化物半导体薄膜的制造方法，制造半导体器件和半导体器件的方法
公开(公告)号：JP2007201032A
公开(公告)日：2007-08-09
申请号：JP2006015868
申请日：2006-01-25
Inventor： YOKOZEKI MIKIHIRO , SHIOMI HARUNORI , YANASHIMA KATSUNORI
IPC: H01L21/205 , H01L33/28 , H01L33/32
Abstract: PROBLEM TO BE SOLVED: To provide a method for growing oxy-chalcogenide based thin film excellent in mass productivity in which a p-type layer can be obtained and an oxy-chalcogenide based thin film can be grown uniformly over a large area. SOLUTION: Solution vaporization CVD is employed for growing an oxy-chalcogenide based thin film. For example, a Cu thin film 102 is formed on a substrate 101 such as a YSZ substrate or an MgO substrate and then an amorphous LaCuOS thin film 103 is grown by solution vaporization CVD. For example, La(EDMDD) 3 is employed as an La material, and Cu(EDMDD) 2 is employed as a Cu material. Growth temperature is set at 400°C or less. Thereafter, the amorphous LaCuOS thin film 103 is crystallized by reactive solid phase epitaxial growth method thus obtaining a crystalline LaCuOS thin film 104. COPYRIGHT: (C)2007,JPO&INPIT
Abstract translation: 待解决的问题：提供一种用于生长氧化硫属元素化的基于薄膜的方法，所述薄膜的质量生产率优异，其中可以获得p型层，并且可以在大面积上均匀地生长氧硫属化物基薄膜 。 解决方案：溶液蒸发CVD用于生长基于氧硫族化物的薄膜。 例如，在诸如YSZ基板或MgO基板的基板101上形成Cu薄膜102，然后通过溶液蒸发CVD生长非晶LaCuOS薄膜103。 例如，La（EDMDD）
3 用作La材料，Cu（EDMDD） 2 用作Cu材料。 生长温度设定在400℃以下。 此后，通过反应性固相外延生长方法使无定形LaCuOS薄膜103结晶，从而获得结晶LaCuOS薄膜104.权利要求：（C）2007，JPO＆INPIT -
公开(公告)号：JP2006352084A
公开(公告)日：2006-12-28
申请号：JP2006105647
申请日：2006-04-06
Applicant: SONY CORP
Inventor： OMAE AKIRA , TOMITANI SHIGETAKA , MAEDA YUUKI , SHIOMI HARUNORI , AMI TAKAAKI , MIYAJIMA TAKAO , YANASHIMA KATSUNORI , TANGE TAKASHI , YASUDA ATSUSHI
Abstract: PROBLEM TO BE SOLVED: To provide a light emitting diode of significantly high light emitting efficiency that can be manufactured by one-time epitaxial growth at a low cost, and a manufacturing method thereof. SOLUTION: In a recess 11a formed on one main surface of a sapphire substrate 11, growth in a lateral direction is performed from a GaN layer 12, after burying the recess 11a by making the GaN layer 12 grow after passing through a state of a triangular cross section shape with its bottom face as a base. A light emitting diode structure is formed on the GaN layer 12 by growing a GaN based semiconductor layer including an active layer on the GaN layer 12. By using the GaN based light emitting diode, a light emitting diode backlight, etc. is manufactured. COPYRIGHT: (C)2007,JPO&INPIT
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公开(公告)号：JP2006228916A
公开(公告)日：2006-08-31
申请号：JP2005039969
申请日：2005-02-17
Inventor： OMAE AKIRA , YASUDA TOSHIKAZU , KAZETAGAWA MUNEYUKI , HATADA IZUHO , YANASHIMA KATSUNORI
IPC: H01L33/34
Abstract: PROBLEM TO BE SOLVED: To make it possible to obtain such a light emitting device that is high in light emitting efficiency by forming a silicon-based light emitting layer having a quantum confined structure utilizing quantum effect. SOLUTION: The light emitting device 1 is provided with a silicon-based light emitting layer which is formed on a substrate and utilizes quantum effect. The silicon-based light emitting layer utilizing the quantum effect has a quantum confined structure. For example, the light emitting layer uses a silicon oxide thin film (oxide silicon layer 12) which contains silicon-based semiconductor particulate 11 having similar size to the de Broglie wavelength of electrons. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract translation: 解决的问题：为了通过利用量子效应形成具有量子限制结构的硅基发光层，可以获得这样的发光效率高的发光元件。 解决方案：发光器件1设置有形成在衬底上并利用量子效应的硅基发光层。 利用量子效应的硅基发光层具有量子限制结构。 例如，发光层使用含有与电子的德布罗意波长相似的硅基半导体颗粒11的氧化硅薄膜（氧化硅层12）。 版权所有（C）2006，JPO＆NCIPI
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85.发明专利
公开(公告)号：JP2006164938A
公开(公告)日：2006-06-22
申请号：JP2005131055
申请日：2005-04-28
Inventor： YASUDA TOSHIKAZU , OMAE AKIRA , KAZETAGAWA MUNEYUKI , HATADA IZUHO , MEMESAWA SATOHIKO , YANASHIMA KATSUNORI , NARUI HIRONOBU
IPC: H05B33/14 , B82Y20/00 , B82Y99/00 , C09K11/00 , C09K11/08 , C09K11/59 , H01J1/63 , H01J29/20 , H01L33/00 , H05B33/10
Abstract: PROBLEM TO BE SOLVED: To provide a light-emitting element with large light emission strength, capable of obtaining emission light having a wavelength with a narrow half width at half maximum. SOLUTION: The light emitting element 10 has a light emission layer 20 formed on a substrate 11. The light emission layer has a structure formed by laminating a first material layer 21, a quantum well layer 24, and a second material layer 22. At least one layer out of the first material layer 21 and the second material layer 22 contains rare-earth element 23. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract translation: 解决的问题：为了提供具有大的发光强度的发光元件，能够获得半波长窄的半波长的发光。 解决方案：发光元件10具有形成在基板11上的发光层20.发光层具有通过层叠第一材料层21，量子阱层24和第二材料层22而形成的结构 第一材料层21和第二材料层22中的至少一个层包含稀土元素23.版权所有（C）2006，JPO＆NCIPI
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Patent Agency Ranking
公开(公告)号：JP2006039255A
公开(公告)日：2006-02-09
申请号：JP2004219865
申请日：2004-07-28
Inventor： ARAKIDA TAKAHIRO , NAKADA HIDEHIKO , NARUSE AKIKAZU , OKUBO YOSHIKAZU , EGUCHI MOMOKO , YANASHIMA KATSUNORI
Abstract: PROBLEM TO BE SOLVED: To provide an optical coupling device optical coupling device capable of facilitating coupling of an optical waveguide, an optical fiber and an optical element and formed inexpensively with high productivity and high yield and also with high accuracy, and to provide its manufacturing method. SOLUTION: After the optical waveguide 2, in which an end face 5 is made an inclined reflecting face, is bonded and fixed to the base material of a support body 1, an abutting face 6 against a package substrate 11 is formed at a position away from the end face 5 by a prescribed distance 21. In the package substrate 11, an optical waveguide support face 12, a recessed part 13 and an abutting face 15 against the support body 1 are provided, the optical element 14 is fixed at a position away from the abutting face 15 by a prescribed distance 22. The optical coupling between the optical waveguide 2 and the optical element 14 is formed by making the principal face of the optical waveguide 2 in contact with the optical waveguide support face 12 to perform the positioning of the height direction, and then allowing to abut the abutting faces 6, 15 against each other to perform the positioning in the left-and-right direction. An abutting face of a depth direction is provided to facilitate all the positionings of three-dimensional directions by an abutting process by providing . COPYRIGHT: (C)2006,JPO&NCIPI
Abstract translation: 解决的问题：提供一种能够促进光波导，光纤和光学元件的耦合的光耦合装置的光耦合装置，并且以高生产率和高产量以及高精度成本廉价地形成，并且 提供其制造方法。 解决方案：在将端面5形成倾斜反射面的光波导2接合并固定到支撑体1的基底材料上之后，抵靠着封装基板11的抵接面6形成在 从端面5离开规定距离21的位置。在封装基板11中，设置有光波导支撑面12，凹部13以及抵靠支撑体1的抵接面15，光学元件14固定 在远离接触面15的位置处设置规定的距离22.光波导2和光学元件14之间的光耦合是通过使光波导2的主面与光波导支撑面12接触而形成的 执行高度方向的定位，然后允许邻接面6,15彼此抵靠以在左右方向上进行定位。 设置深度方向的抵接面以通过提供邻接处理来促进三维方向的所有定位。 版权所有（C）2006，JPO＆NCIPI
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公开(公告)号：JP2005330519A
公开(公告)日：2005-12-02
申请号：JP2004148584
申请日：2004-05-19
Inventor： YASUDA TOSHIKAZU , OMAE AKIRA , KAZETAGAWA MUNEYUKI , MEMESAWA SATOHIKO , YANASHIMA KATSUNORI
Abstract: PROBLEM TO BE SOLVED: To feed high temperature gas heated at desired temperature to the direction of the substrate to be vapor-deposited together with an evaporated vapor deposition material without providing a means for heating gas separately from a vapor deposition system. SOLUTION: Regarding the vapor deposition system 1, a vapor deposition source 12 and the substrate 51 to be vapor-deposited are oppositely provided inside a chamber 11. The vapor deposition source 12 is provided with: a crucible 13 for evaporating a vapor deposition material; a gas flow passage 14 for feeding gas 61 to the direction of the substrate to be vapor-deposited along the outer circumferential side of the crucible 13; and a heating source 15 for heating the gas flow passage 14. The gas flow passage 14 is composed of layered flow passages 141 as a plurality of layers where gas is made to flow from the lowest layer to the direction of the outermost layer, and an opening part 145 is formed on each layered flow passage 141 in such a manner that the gas flow goes to the direction of the substrate 51 to be vapor-deposited. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract translation: 要解决的问题：将不需要提供与气相沉积系统分开加热气体的装置，将蒸发的气相沉积材料与希望温度加热的高温气体一起进行蒸发沉积在基材上。
解决方案：关于气相沉积系统1，气相沉积源12和要蒸汽沉积的基底51相对地设置在腔室11的内部。气相沉积源12设置有：用于蒸发蒸气的坩埚13 沉积材料; 用于沿着坩埚13的外周侧向气相沉积基板的方向供给气体61的气体流路14; 以及用于加热气体流路14的加热源15.气体流路14由多层的层状流路141构成，气体从最下层向最外层的方向流动， 开口部145形成在各分层流路141上，使得气流朝向基板51的方向蒸镀。 版权所有（C）2006，JPO＆NCIPI
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公开(公告)号：JP2005133122A
公开(公告)日：2005-05-26
申请号：JP2003368220
申请日：2003-10-29
Inventor： OMAE AKIRA , TOJO TAKESHI , MEMESAWA SATOHIKO , YANASHIMA KATSUNORI
Abstract: PROBLEM TO BE SOLVED: To provide a film deposition system and a film deposition method where a film deposition rate and the thickness of a deposited film can be extremely satisfactorily controlled while holding the film deposition rate by vapor deposition.
SOLUTION: The film deposition system 1 for depositing a vapor deposition film on a substrate W is provided with: a vapor deposition source 5 of generating raw material vapor Mg; substrate holding means 7 of holding the substrate W in a state where the substrate W can be oppositely arranged to the vapor deposition source 5; and a gas wall forming means 9 forming gas walls 11 in a state of surrounding the space (a) between the substrate holding means 7 and the vapor deposition source 5. The gas wall forming means 9 is composed of gas feed edges 9a arranged at the positions surrounding the vapor deposition source 5 and jetting gas G from the side of the vapor deposition source 5 toward the sides of the substrate holding means 7, and forms the gas walls 11 so as to freely make an inside diameter in accordance with the jetting angle of the gas G from the gas feed edges 9a.
COPYRIGHT: (C)2005,JPO&NCIPIAbstract translation: 要解决的问题：提供一种成膜速度和沉积膜的厚度可以通过气相沉积保持成膜速度而非常令人满意地控制的成膜沉积系统和成膜方法。 ＆lt; P＆gt;解决方案：用于在基板W上沉积蒸镀膜的成膜系统1具备：生成原料蒸气Mg的蒸镀源5; 将基板W保持在能够与气相沉积源5相对配置的状态的基板保持单元7; 以及形成气体壁11的气体壁形成装置9，其处于围绕基板保持装置7和气相沉积源5之间的空间（a）的状态。气体壁形成装置9由设置在 位于气相沉积源5周围的位置和从气相沉积源5侧朝向基板保持装置7的侧面喷射气体G，并形成气壁11，以便根据喷射角自由地形成内径 的气体G。 版权所有（C）2005，JPO＆NCIPI
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89.发明专利P-type group iii nitride compound semiconductor, light-emitting diode, and semiconductor laser 审中-公开P型III族氮化物半导体，发光二极管和半导体激光器
公开(公告)号：JP2004343137A
公开(公告)日：2004-12-02
申请号：JP2004208283
申请日：2004-07-15
Inventor： ASAZUMA YASUNORI , YANASHIMA KATSUNORI , MIYAJIMA TAKAO
IPC: H01L21/205 , H01L33/06 , H01L33/32 , H01S5/343 , H01L33/00
Abstract: PROBLEM TO BE SOLVED: To improve crystallinity and electrical conductivity, and to average the composition ratio or p-type impurity concentration within the crystal growth side. SOLUTION: A first layer 11, consisting of AlGaN mixed crystal with a thickness of about 1 to 100 nm, and a second layer 12, consisting of p-type GaN doped with Mg to a thickness of about 1 to 100 nm are alternately laminated in a plurality of laminations, respectively. Since the first layer 11 and the second layer 12, which have independent contents of aluminum and p-type impurity concentrations and are different from each other, are formed in separate processes, respectively, a proper p-type group III nitride compound semiconductor having the properties as p-type AlGaN mixed crystal, as whole, is obtained. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract translation: 要解决的问题：提高结晶度和导电性，并平均晶体生长侧内的组成比或p型杂质浓度。 解决方案：由厚度约1至100nm的AlGaN混合晶体构成的第一层11和由掺杂有Mg的厚度约1至100nm的p型GaN组成的第二层12是 交替层叠在多个叠片中。 由于具有独立含量的铝和p型杂质浓度彼此不同的第一层11和第二层12分别在分开的工艺中分别形成适当的p型III族氮化物半导体，其具有 获得了作为p型AlGaN混晶的性能。 版权所有（C）2005，JPO＆NCIPI
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公开(公告)号：JP2004199032A
公开(公告)日：2004-07-15
申请号：JP2003304822
申请日：2003-08-28
Inventor： SUZUKI KENJI , YANASHIMA KATSUNORI
Abstract: PROBLEM TO BE SOLVED: To provide a polymeric optical waveguide which has a simple constitution and has a satisfactory clad mode suppression effect. SOLUTION: A polymeric optical waveguide 10 is a planar polymeric optical waveguide of which the wavelength of guided light is set to about 850 nm, and is provided with a lower clad layer 12, a band-shaped core layer 14 formed on the lower clad layer 12, and an upper clad layer 16 formed around the core layer 14 and on the lower clad layer 12. The lower clad layer 12 and the upper clad layer 16 are made of oxetane resin, wherein a specific block coloring matter is added and uniformly dispersed so as to be 1.0 wt%. The core layer 14 is made of oxetane resin of which the refractive index is 0.2 to 2.0% higher than those of the lower clad layer 12 and the upper clad layer 16. COPYRIGHT: (C)2004,JPO&NCIPI
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