公开(公告)号：FR2823032A1

公开(公告)日：2002-10-04

申请号：FR0104510

申请日：2001-04-03

Applicant: ST MICROELECTRONICS SA

Inventor： SKOTNICKI THOMAS ,  DUTARTRE DIDIER ,  RIBOT PASCAL

IPC: H03H3/00 ,  H03H9/24 ,  H03H9/00

Abstract: The electromechanical resonator has an active zone (1) made of strongly doped monocrystalline silicon making a first electrode. There are isolating zones (2) carrying the monocrystalline silicon and leaving a central spaced zone.

公开(公告)号：FR2802705B1

公开(公告)日：2002-08-09

申请号：FR9915902

申请日：1999-12-16

Applicant: ST MICROELECTRONICS SA

Inventor： SKOTNICKI THOMAS ,  JURCZAK MALGORZATA ,  DUTARTRE DIDIER

IPC: H01L21/20 ,  H01L21/762 ,  H01L29/06 ,  H01L21/3213 ,  B82B1/00 ,  B82B3/00

Abstract: The process for fabricating a network of nanometric lines made of single-crystal silicon on an isolating substrate includes the production of a substrate comprising a silicon body having a lateral isolation defining a central part in the body. A recess is formed in the central part having a bottom wall made of dielectric material, a first pair of opposed parallel sidewalls made of dielectric material, and a second pair of opposed parallel sidewalls. At least one of the opposed parallel sidewalls of the second pair being formed from single-crystal silicon. The method further includes the epitaxial growth in the recess, from the sidewall made of single-crystal silicon of the recess, of an alternating network of parallel lines made of single-crystal SiGe alloy and of single-crystal silicon. Also, the lines made of single-crystal SiGe alloy are etched to form in the recess a network of parallel lines made of single-crystal silicon insulated from each other.