公开(公告)号：FR2807208A1

公开(公告)日：2001-10-05

申请号：FR0003983

申请日：2000-03-29

Applicant: ST MICROELECTRONICS SA

Inventor： SKOTNICKI THOMAS ,  FOURNEL RICHARD ,  DUTARTRE DIDIER ,  RIBOT PASCAL ,  PAOLI MARYSE

IPC: H01L21/28 ,  H01L21/336 ,  H01L29/423 ,  H01L21/8239

Abstract: Non-volatile memory semiconductor device comprises silicon based semiconductor substrate (SB) containing a source region (S) and a drain region (D), a control gate (GC) and a floating gate (GF). The floating gate extends between the source and drain regions formed in the substrate, and the control gate is situated above the floating gate and juts out with respect to source and drain regions. An Independent claim is included for the fabrication of the non-volatile memory semiconductor device.

公开(公告)号：DE60214463D1

公开(公告)日：2006-10-19

申请号：DE60214463

申请日：2002-04-02

Applicant: ST MICROELECTRONICS SA

Inventor： SKOTNICKI THOMAS ,  DUTARTRE DIDIER ,  RIBOT PASCAL

IPC: H03H9/24 ,  H03H3/00

Abstract: A resonator formed by the steps of defining an active single-crystal silicon layer delimited by a buried insulator layer, depositing a silicon-germanium layer by a selective epitaxy method so that the silicon-germanium layer grows above the active single-crystal silicon area, depositing by a non-selective epitaxy method a silicon layer and etching it according to a desired contour, and removing the silicon-germanium by a selective etching with respect to the silicon and to the insulator.

公开(公告)号：FR2823032B1

公开(公告)日：2003-07-11

申请号：FR0104510

申请日：2001-04-03

Applicant: ST MICROELECTRONICS SA

Inventor： SKOTNICKI THOMAS ,  DUTARTRE DIDIER ,  RIBOT PASCAL

IPC: H03H3/00 ,  H03H9/24 ,  H03H9/00

Abstract: A resonator formed by the steps of defining an active single-crystal silicon layer delimited by a buried insulator layer, depositing a silicon-germanium layer by a selective epitaxy method so that the silicon-germanium layer grows above the active single-crystal silicon area, depositing by a non-selective epitaxy method a silicon layer and etching it according to a desired contour, and removing the silicon-germanium by a selective etching with respect to the silicon and to the insulator.

公开(公告)号：FR2807208B1

公开(公告)日：2003-09-05

申请号：FR0003983

申请日：2000-03-29

Applicant: ST MICROELECTRONICS SA

Inventor： SKOTNICKI THOMAS ,  FOURNEL RICHARD ,  DUTARTRE DIDIER ,  RIBOT PASCAL ,  PAOLI MARYSE

IPC: H01L21/28 ,  H01L21/336 ,  H01L29/423 ,  H01L21/8239

Abstract: A non-volatile memory includes a floating gate extending in a substrate between source and drain regions. A channel region may be confined by two insulating layers. The invention is particularly applicable to EPROM, EEPROM, Flash and single-electron memories using CMOS technology.

公开(公告)号：FR2823032A1

公开(公告)日：2002-10-04

申请号：FR0104510

申请日：2001-04-03

Applicant: ST MICROELECTRONICS SA

Inventor： SKOTNICKI THOMAS ,  DUTARTRE DIDIER ,  RIBOT PASCAL

IPC: H03H3/00 ,  H03H9/24 ,  H03H9/00

Abstract: The electromechanical resonator has an active zone (1) made of strongly doped monocrystalline silicon making a first electrode. There are isolating zones (2) carrying the monocrystalline silicon and leaving a central spaced zone.