公开(公告)号：US20150140686A1

公开(公告)日：2015-05-21

申请号：US14608817

申请日：2015-01-29

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： William J. Gallagher ,  Eugene J. O'Sullivan ,  Naigang Wang

IPC: B81C1/00 ,  H01L43/12 ,  H01L43/10

CPC classification number: B81C1/00373 ,  B81B3/0021 ,  B81B2201/038 ,  B81B2203/0118 ,  B81C1/00142 ,  B81C1/00706 ,  B81C2201/0188 ,  H01F41/046 ,  H01L28/10 ,  H01L43/10 ,  H01L43/12 ,  H01L43/14

Abstract: A micro-electromechanical device and method of manufacture are disclosed. A sacrificial layer is formed on a silicon substrate. A metal layer is formed on a top surface of the sacrificial layer. Soft magnetic material is electrolessly deposited on the metal layer to manufacture the micro-electromechanical device. The sacrificial layer is removed to produce a metal beam separated from the silicon substrate by a space.

公开(公告)号：US08912088B2

公开(公告)日：2014-12-16

申请号：US13879803

申请日：2011-11-18

Applicant: Toshinori Ogashiwa ,  Masaaki Kurita ,  Takashi Nishimori ,  Yukio Kanehira

Inventor： Toshinori Ogashiwa ,  Masaaki Kurita ,  Takashi Nishimori ,  Yukio Kanehira

IPC: H01L21/44 ,  H01L21/48 ,  H01L23/00 ,  B23K35/30 ,  B23K35/32 ,  B23K35/02 ,  B81C1/00 ,  B22F7/08 ,  B23K1/00

CPC classification number: H01L21/4885 ,  B22F7/08 ,  B23K1/0016 ,  B23K35/0244 ,  B23K35/3006 ,  B23K35/3013 ,  B23K35/322 ,  B23K2101/40 ,  B81C1/00095 ,  B81C1/00373 ,  B81C2201/0188 ,  B81C2201/0194 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/94 ,  H01L2224/03003 ,  H01L2224/031 ,  H01L2224/0312 ,  H01L2224/03334 ,  H01L2224/0401 ,  H01L2224/0508 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/0567 ,  H01L2224/05671 ,  H01L2224/05673 ,  H01L2224/05676 ,  H01L2224/05678 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/11003 ,  H01L2224/111 ,  H01L2224/1112 ,  H01L2224/11334 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/13169 ,  H01L2224/1317 ,  H01L2224/13171 ,  H01L2224/13173 ,  H01L2224/13176 ,  H01L2224/13178 ,  H01L2224/13181 ,  H01L2224/13184 ,  H01L2224/94 ,  H01L2924/01006 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/11

Abstract: The present invention provides a transfer substrate for transferring a metal wiring material to a transfer-receiving object, the transfer substrate comprising a substrate, at least one metal wiring material formed on the substrate and an underlying metal film formed between the substrate and the metal wiring material, wherein the metal wiring material is a molded article prepared by sintering, e.g., gold powder having a purity of 99.9% by weight or more and an average particle size of 0.01 μm to 1.0 μm and the underlying metal film is composed of a metal such as gold or an alloy. The transfer substrate is capable of transferring a metal wiring material to the transfer-receiving object even at a temperature for heating the transfer-receiving object of 80 to 300° C.

Abstract translation: 本发明提供一种用于将金属布线材料转印到转印接收对象的转印基板，所述转印基板包括基板，形成在所述基板上的至少一种金属布线材料和形成在所述基板和所述金属布线之间的下面的金属膜 材料，其中金属布线材料是通过烧结制备的模制品，例如纯度为99.9重量％以上，平均粒径为0.01μm〜1.0μm的金粉，下面的金属膜由金属 如金或合金。 转印基板即使在80〜300℃的转印接收对象的加热温度下也能够将金属配线材料转印到转印接收体。

公开(公告)号：US20140273283A1

公开(公告)日：2014-09-18

申请号：US13971308

申请日：2013-08-20

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： William J. Gallagher ,  Eugene J. O'Sullivan ,  Naigang Wang

IPC: H01L43/14

CPC classification number: B81C1/00373 ,  B81B3/0021 ,  B81B2201/038 ,  B81B2203/0118 ,  B81C1/00142 ,  B81C1/00706 ,  B81C2201/0188 ,  H01F41/046 ,  H01L28/10 ,  H01L43/10 ,  H01L43/12 ,  H01L43/14

Abstract: A micro-electromechanical device and method of manufacture are disclosed. A sacrificial layer is formed on a silicon substrate. A metal layer is formed on a top surface of the sacrificial layer. Soft magnetic material is electrolessly deposited on the metal layer to manufacture the micro-electromechanical device. The sacrificial layer is removed to produce a metal beam separated from the silicon substrate by a space.

公开(公告)号：US20130136924A1

公开(公告)日：2013-05-30

申请号：US13806558

申请日：2011-06-07

Applicant: Koji Ikuta ,  Masashi Ikeuchi

Inventor： Koji Ikuta ,  Masashi Ikeuchi

IPC: B29C67/00

CPC classification number: B29C64/135 ,  A61M2037/0023 ,  A61M2037/0053 ,  B29L2031/7544 ,  B33Y10/00 ,  B33Y70/00 ,  B81B2201/055 ,  B81C1/00373 ,  B81C2201/0188 ,  Y10T428/2933 ,  Y10T428/31678

Abstract: Disclosed is a method for producing a three-dimensional polymer-metal complex microstructure including forming a polymer structure by stereolithography using a photocurable resin having a reactive group X and dipping it in a liquid of a metal-containing nanoparticle having a reactive group X′ which is bound to the reactive group X, thereby forming a metal-containing layer on the polymer structure through binding the reactive group X and the reactive group X′.According to this method, it is possible to produce a polymer-metal complex structure having a steric structure and to produce a three-dimensional polymer-metal complex microstructure which does not denature biomolecules in a metal complexation process.

Abstract translation: 公开了一种三维聚合物 - 金属络合物显微组织的制造方法，包括通过使用具有反应性基团X的光固化树脂通过立体光刻法形成聚合物结构并将其浸渍在具有反应性基团X'的含金属纳米颗粒的液体中， 与反应性基团X结合，从而通过结合反应性基团X和反应性基团X'在聚合物结构上形成含金属层。 根据该方法，可以制造具有立体结构的聚合物 - 金属络合物结构体，并且能够生成在金属络合过程中不使生物分子变性的三维聚合物 - 金属络合物微结构。

公开(公告)号：US20110311737A1

公开(公告)日：2011-12-22

申请号：US13148640

申请日：2010-02-04

Applicant: Yukichi Shigeta ,  Kunihiko Aoyagi ,  Hiroyuki Nose

Inventor： Yukichi Shigeta ,  Kunihiko Aoyagi ,  Hiroyuki Nose

IPC: C23C16/50 ,  B82Y40/00 ,  B82Y30/00

CPC classification number: C23C14/0605 ,  B81C1/00031 ,  B81C2201/0188 ,  C23C14/04 ,  C23C14/14 ,  C23C14/22 ,  C23C14/24

Abstract: A vapor deposition apparatus for a minute-structure includes a surface acoustic wave device 10 that has at least a pair of electrodes 12 and 13 arranged at an interval on a surface of a piezoelectric body 11, a vacuum vapor deposition device 20 that vacuum-deposits at least two substances A and B on a surface of the surface acoustic wave device, and a high-frequency application device 30 that applies a high-frequency voltage between the electrodes of the surface acoustic wave device. In the state where a standing wave of surface acoustic waves is generated on the surface of the surface acoustic wave device by applying the high-frequency voltage, a plurality of thin film layers are formed, and a minute-structure is vapor-deposited at a specific position of the standing wave.

Abstract translation: 微结构的气相沉积装置包括表面声波装置10，其具有在压电体11的表面上间隔布置的至少一对电极12和13，真空沉积装置20，其将真空沉积 表面声波装置的表面上的至少两种物质A和B，以及在声表面波装置的电极之间施加高频电压的高频施加装置30。 在通过施加高频电压在表面声波装置的表面上产生表面声波的驻波的状态下，形成多个薄膜层，并且在a部分中气相沉积微小结构 驻波的具体位置。

公开(公告)号：US08034719B1

公开(公告)日：2011-10-11

申请号：US11311584

申请日：2005-12-08

Applicant: Daniel L. Jean ,  Michael Deeds ,  Allen Keeney

Inventor： Daniel L. Jean ,  Michael Deeds ,  Allen Keeney

IPC: H01L21/302

CPC classification number: B81C1/00619 ,  B81B2203/0361 ,  B81B2207/056 ,  B81C2201/0188 ,  H01L21/76885

Abstract: To fabricate high aspect ratio metal structures, a two-layer structure is provided on a conductive layer. The two-layer structure includes a first layer adjacent the conductive layer and a second layer adjacent the first layer where the second layer is etchable by a Deep Reactive Ion Etching (DRIE) process. Using the DRIE process, at least one selected region of the second layer is completely etched away with the selected region being at least partially aligned with a region of the conductive layer such that the first layer is then exposed thereover. The first layer so-exposed is then removed to expose the region of the conductive layer thereunder. Metal is electroplated onto the exposed conductive layer and any remaining portions of the two-layer structure are then removed.

Abstract translation: 为了制造高纵横比金属结构，在导电层上提供两层结构。 两层结构包括邻近导电层的第一层和邻近第一层的第二层，其中第二层可通过深度反应离子蚀刻（DRIE）工艺进行蚀刻。 使用DRIE工艺，第二层的至少一个选定区域被完全蚀刻掉，所选择的区域至少部分地与导电层的区域对准，使得第一层然后暴露在其中。 然后去除暴露的第一层以暴露其下面的导电层的区域。 将金属电镀在暴露的导电层上，然后除去两层结构的任何剩余部分。

公开(公告)号：US20110212308A1

公开(公告)日：2011-09-01

申请号：US12999829

申请日：2009-06-23

Applicant: David P Brown ,  Andrei Ollikainen ,  Esko I. Kauppinen ,  Albert G. Nasibulin ,  Jussi Heikkonen

Inventor： David P Brown ,  Andrei Ollikainen ,  Esko I. Kauppinen ,  Albert G. Nasibulin ,  Jussi Heikkonen

IPC: B32B3/10 ,  B32B37/20 ,  C08J5/18

CPC classification number: B81C1/00357 ,  B81C1/00373 ,  B81C1/00476 ,  B81C1/00492 ,  B81C2201/0187 ,  B81C2201/0188 ,  B81C2201/0194 ,  C01B32/15 ,  C01B32/168 ,  C01P2004/13 ,  C01P2004/16 ,  C04B14/026 ,  C04B30/02 ,  C04B2111/00844 ,  C04B2111/00853 ,  Y10T428/24802

Abstract: A method for the production of a fibrous network-substrate component includes the steps of providing a network of fibrous material (1) on a preliminary substrate (2) by filtering high aspect ratio molecular structures (HARM-structures) from gas flow, placing the network of fibrous material (1) on the preliminary substrate (2) in proximity to a secondary substrate (3), applying a force to the network of fibrous material (1) to preferably attract the network of fibrous material (1) from the preliminary substrate (2) to the secondary substrate (3) in order to transfer the network of fibrous material (1) from the preliminary substrate (2) to the secondary substrate (3), and removing the preliminary substrate (2) from the network of fibrous material (1).

Abstract translation: 制造纤维网状基材成分的方法包括以下步骤：通过从气流中过滤高纵横比分子结构（HARM-结构），在预备基材（2）上提供纤维材料网（1），将 在初级衬底（2）上靠近次级衬底（3）的纤维材料（1）的网络，向纤维材料（1）的网络施加力以优选地将纤维材料（1）的网络从初步 为了将纤维材料（1）的网络从预备衬底（2）传送到第二衬底（3），将衬底（2）连接到第二衬底（3），并从初始衬底（2）的网络 纤维材料（1）。

公开(公告)号：US20100055352A1

公开(公告)日：2010-03-04

申请号：US12099556

申请日：2008-04-08

Applicant: James L. MAXWELL

Inventor： James L. MAXWELL

IPC: C23C16/48

CPC classification number: C23C16/4418 ,  B81C99/0095 ,  B81C2201/0188 ,  C23C16/4415 ,  C23C16/455 ,  C23C16/4551 ,  C23C16/483

Abstract: A method of growing a plurality of free-standing structures comprises providing a plurality of free-standing structures, each free-standing structure having a first end coupled to a substrate, and a terminal end; providing at least one laser beam, the laser beam having a beam waste at a point proximate to the terminal end of the free-standing structure; and moving one of the plurality of freestanding structures or the beam waste to provide a growth zone proximate to the terminal end of each of the free-standing structures such that the free-standing structures grow into the growth zones by addition of decomposing precursor components. The growth rates of each of the free-standing structures are substantially the same.

Abstract translation: 生长多个独立结构的方法包括提供多个独立结构，每个独立结构具有耦合到衬底的第一端和终端; 提供至少一个激光束，所述激光束在靠近所述独立结构的终端的点处具有光束废料; 并且移动所述多个独立结构或束废料中的一个以提供靠近每个独立结构的末端的生长区，使得通过添加分解的前体组分而使自立结构生长到生长区中。 每个独立结构的增长率基本相同。

公开(公告)号：US11807523B2

公开(公告)日：2023-11-07

申请号：US17482309

申请日：2021-09-22

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： Chien-Hua Chen ,  Devin A. Mourey ,  Michael G. Groh

IPC: B41J2/155 ,  B41J2/16 ,  B81C99/00 ,  B81C1/00 ,  B01L3/02

CPC classification number: B81C99/008 ,  B01L3/0268 ,  B41J2/155 ,  B41J2/1603 ,  B41J2/1637 ,  B81C1/00309 ,  B41J2202/19 ,  B41J2202/20 ,  B41J2202/21 ,  B81B2201/052 ,  B81B2201/058 ,  B81B2203/0315 ,  B81B2203/0338 ,  B81C2201/0188 ,  B81C2203/0154

Abstract: Examples include a device comprising integrated circuit dies molded into a molded panel. The molded panel has three-dimensional features formed therein, where the three-dimensional features are associated with the integrated circuit dies. To form the three-dimensional features, a feature formation material is deposited, the molded panel is formed, and the feature formation material is removed.

公开(公告)号：US11681141B2

公开(公告)日：2023-06-20

申请号：US16705677

申请日：2019-12-06

Applicant: STMicroelectronics S.r.l.

Inventor： Roberto Carminati ,  Sonia Costantini ,  Riccardo Gianola ,  Linda Montagna ,  Francesca Maria Carla Carpignano

IPC: G02B26/08 ,  B81B3/00 ,  B81C1/00 ,  G02B26/10

CPC classification number: G02B26/085 ,  B81B3/0045 ,  B81C1/00166 ,  G02B26/101 ,  B81B2201/042 ,  B81B2203/0127 ,  B81B2203/0154 ,  B81B2203/0163 ,  B81B2203/04 ,  B81C2201/016 ,  B81C2201/0188

Abstract: A MEMS device is obtained by forming a temporary biasing structure on a semiconductor body, and forming an actuation coil on the semiconductor body, the actuation coil having at least one first end turn, one second end turn and an intermediate turn arranged between the first and the second end turns and electrically coupled to the first end turn through the temporary biasing structure. In this way, the intermediate turn is biased at approximately the same potential as the first end turn during galvanic growth, and, at the end of growth, the actuation coil has an approximately uniform thickness. At the end of galvanic growth, portions of the temporary biasing structure are selectively removed to electrically separate the first end turn from the intermediate turn and from a dummy biasing region adjacent to the first end turn.