Abstract:
Provided are a method for manufacturing a flexible nanogenerator and a flexible nanogenerator manufactured thereby. The method for manufacturing the flexible nanogenerator of the present invention includes the steps of: laminating a piezoelectric element layer having a piezoelectric material layer on a sacrificial substrate; crystallizing the piezoelectric element layer by thermally processing the piezoelectric element layer at a high temperature; separating unit piezoelectric elements from the sacrificial substrate by removing the sacrificial substrate; and transferring the separated unit piezoelectric elements onto a flexible substrate. The method for manufacturing the flexible nanogenerator and the flexible nanogenerator manufactured thereby of the present invention can continuously produce electric power from the movement of a human body and the like by producing electric power according to the bending of the substrate.
Abstract:
The disclosure is generally directed to fabrication steps, and operation principles for microelectromechanical (MEMS) transducers. In one embodiment, the disclosure relates to a texture morphing device. The texture morphing device includes: a plurality of supports arranged on a substrate to support a deformable mirror, an ITO layer; and a Distributed Bragg Reflector (DBR ) layer. A pair of adjacent supports form a cavity with the ITO layer and the deformable mirror. When the height of the cavity changes responsive to an external pressure, the internal reflection within the cavity is changed. The change in the height of the cavity causes the exterior texture to morph. Similar principles are disclosed for constructing sensor and actuators.
Abstract:
A method for the production of a fibrous network- substrate component. The method comprises the steps of providing a network of fibrous material (1) on a preliminary substrate (2) by filtering high aspect ratio molecular structures (HARM-structures) from gas flow, placing the network of fibrous material (1) on the preliminary substrate (2) in proximity to a secondary substrate (3), applying a force to the network of fibrous material (1) to preferably attract the network of fibrous material (1) from the preliminary substrate (2) to the secondary substrate (3) in order to transfer the network of fibrous material (1) from the preliminary substrate (2) to the secondary substrate (3), and removing the preliminary substrate (2) from the network of fibrous material (1).
Abstract:
본 발명은 기판과, 상기 기판 상에 형성된 하나 이상의 금속 배선 소재와, 상기 기판과 상기 금속 배선 소재 사이에 형성된 하지 금속막(underlying metal film)으로 이루어지며, 상기 금속 배선 소재를 피전사물에 전사시키기 위한 전사용 기판으로서, 상기 금속 배선 소재는, 순도 99.9 중량% 이상, 평균 입자경 0.01 ㎛~1.0 ㎛인 금 분말 등을 소결하여 이루어지는 성형체이며, 상기 하지 금속막은, 금 등의 금속 또는 합금 등으로 이루어지는 전사용 기판이다. 이 전사용 기판은, 피전사물의 가열온도를 80~300℃로 하더라도 금속 배선 소재를 피전사물에 전사할 수 있다.
Abstract:
The present invention provides a transfer substrate for transferring a metal wiring material to a transfer-receiving object, the transfer substrate comprising a substrate, at least one metal wiring material formed on the substrate and an underlying metal film formed between the substrate and the metal wiring material, wherein the metal wiring material is a molded article prepared by sintering, e.g., gold powder having a purity of 99.9% by weight or more and an average particle size of 0.01 µm to 1.0 µm and the underlying metal film is composed of a metal such as gold or an alloy. The transfer substrate is capable of transferring a metal wiring material to the transfer-receiving object even at a temperature for heating the transfer-receiving object of 80 to 300°C.
Abstract:
방법 및 시스템은 레이저 조사를 이용하여 두꺼운 도너 웨이퍼에서, 광학, 광전, 전자, 마이크로 전자 기계 시스템 (MEMS)을 포함하는 결정질 반도체 물질, 또는 광전자 장치의 원하는 두께의 층을 분할 및 분리를 위해 제공된다(Methods and systems are provided for the split and separation of a layer of desired thickness of crystalline semiconductor material containing optical, photovoltaic, electronic, micro-electro-mechanical system (MEMS), or optoelectronic devices, from a thicker donor wafer using laser irradiation).
Abstract:
A method for preparing a flexible electrode is provided. The method comprises sequentially forming a flexible base layer and an intermediate conductive layer on a carrier plate; treating an elastomeric template having an electrode pattern with an acid, followed by transferring and printing the electrode pattern onto the intermediate conductive layer to form an electrode inducing layer; forming a titanium dioxide-polydopamine composite layer in a gap of the electrode inducing layer; forming a platinum electrode layer on the titanium dioxide-polydopamine composite layer; removing the carrier plate. The invention solves the problems of slow formation of a polydopamine film and slow formation of a platinum electrode layer. A flexible electrode is further provided.
Abstract:
A complementary metal oxide semiconductor (CMOS) device integrated with micro-electro-mechanical system (MEMS) components in a MEMS region is disclosed. The MEMS components, for example, are infrared (IR) thermosensors. The MEMS sensors are integrated on the CMOS device heterogeneously. For example, a CMOS wafer with CMOS devices and interconnections as well as partially processed MEMS modules is bonded with a MEMS wafer with MEMS structures, post CMOS compatibility issues are alleviated. Post integration process to complete the devices includes forming contacts for interconnecting the sensors to the CMOS components as well as encapsulating the devices with a cap wafer using wafer-level vacuum packaging.
Abstract:
A method of manufacturing a panel transducer scale package includes securing acoustic components at predetermined locations on a first carrier substrate with a first surface of the acoustic components positioned adjacent to the first carrier substrate. ASIC components are also secured at predetermined locations on the first carrier substrate with a first surface of the ASIC components positioned adjacent to the first carrier substrate. Photoresist resin is applied over the acoustic components and the ASIC components such that a second surface of the acoustic components is left exposed from the photoresist resin. The first carrier substrate is removed to expose the first surface of the acoustic components and the first surface of the ASIC components. A buildup layer is formed including electrical pathways between each of the acoustic components and the ASIC components, and the photoresist resin is removed.