Abstract:
Disclosed is an electrostatic chuck with a temperature sensing unit, exposure equipment having the electrostatic chuck, and a method of detecting temperature on photomask surfaces. The temperature sensing unit and method of detecting temperature may include obtaining reflectance of a photomask using a multi-wavelength interferometer and determining a temperature on the photomask based on the reflectance.
Abstract:
PURPOSE: A multilayer mirror for extreme ultraviolet rays having an improved reflectance is provided to protect the mirror from pollution of environment and to allow a protection capping layer to enhance characteristic of reflection rate. CONSTITUTION: The multilayer mirror for extreme ultraviolet rays having an improved reflectance has a reflection material for radiation reflection in a desired wavelength range such as a laminated body comprising a first material and a second material alternately laminated. The first material has a real refractive index smaller than the second material in the desired wavelength range. In the mirror, at least one layer of a third material is sandwiched in the laminated body, while tire third material is selected from a group including Rb, RbCl, RbBr, Sr, Y, Zr, Ru, Rh, Tc, Pd, Nb and Be, and alloys and compounds of the materials. Preferably, one layer of the third material is sandwiched between each the pair of the layers of the first and second material, while at least one layer of a forth material is sandwiched in the laminated body. The forth material is selected from the group including Rb, RbCl, RbBr, Sr, Y, Zr, Ru, Rh, Tc, Pd, Nb and Be, and alloys and compounds of the materials.
Abstract:
A multilayer mirror (1) for use in device lithography. The multilayer mirror configured to reflect and/or pattern radiation having a wavelength in the range of about 6.4nm to about 7.2nm. The multilayer mirror has a plurality of alternating layers (4, 6) of materials. The plurality of alternating layers of materials include first layers of materials and second layers of materials. The second layers have a higher refractive index for the radiation than the first layers. The materials of the first layers and the materials of the second layers are mutually chemically unreactive at an interface (7) therebetween at temperatures less than 300 °C. This may allow the mirrors to have a narrow boundary region of intermingled materials from alternating layers between the layers, for example of 0.5 nm or less in width, which may improve sharpness of the boundary region and improve reflectivity.
Abstract:
The invention relates to a mirror (la; la'; lb; lb'; lc; lc') comprising a substrate (S) and a layer arrangement, wherein the layer arrangement is designed in such a way that light (32) having a wavelength of less than 250 nm that is incident on the mirror (la; la'; lb; lb'; lc; lc') at at least an angle of incidence of between 0° and 30° is reflected with more than 20% of its intensity, and the layer arrangement comprises at least one surface layer system (Ρ"') consisting of a periodic sequence of at least two periods (P3) of individual layers, wherein the periods (P3) comprise two individual layers composed of different materials for a high refractive index layer (Η"') and a low refractive index layer (L'"), wherein the layer arrangement comprises at least one layer (G, SPL, B) composed of graphene. Furthermore, the invention relates to the use of graphene (G, SPL, B) on optical elements for reducing the surface roughness to less than 0.1 nm rms HSFR and/or for protecting the optical element in the EUV wavelength range against a radiation-induced irreversible change in volume of more than 1% and/or as a barrier layer for preventing interdiffusion between layers of so-called multilayer layer mirrors in the EUV wavelength range.
Abstract:
Spectral filter for splitting the primary radiation from a generated beam with primary electromagnetic radiation having a wavelength in the extreme ultraviolet (EUV radiation) or soft X-ray (soft X) wavelength range and parasitic radiation having a wavelength in the infrared wavelength range (IR radiation) in an optical device, comprising a surface for reflecting electromagnetic radiation with a wavelength in the extreme ultraviolet wavelength range {EUV radiation), the surface being formed by an EUV radiation-reflecting multilayer structure, which multilayer structure has a pattern of at least one system of concentric grooves mutually separated by concentric rings, wherein the width and depth of the grooves and the width of the rings are selected such that the concentric grooves and rings form Fresnel zones for reflecting radiation with a wavelength in the infrared wavelength range (IR radiation) incident on these grooves and rings, and method for the manufacture thereof.
Abstract:
본 발명은 모노크로매틱 엑스선 발생기용 다층박막거울 정렬장치 및 이를 이용한 엑스선 영상획득방법에 관한 것으로서, 정렬장치는 엑스선발생부(4)와 디텍터부(6) 사이에 배치되되, 다층박막거울(5)에 최적의 입사각을 부여하기 위해 이들을 정렬시키며 엑스선의 조사방향을 제한하는 콜리메이터부(8)를 포함하고, 또한 다층박막거울(5)이 직립 배치되도록 하는 베이스지그(10)와; 베이스지그(10)에 직립되어 있는 다층박막거울(5)의 일면을 탄성 지지하기 위한 탄성지지부(20); 및 탄성지지부(20)에 의해 일면이 탄성 지지되어 있는 다층박막거울(5)의 배면을 밀어 엑스선의 입사각을 조절할 수 있도록 하는 입사각조절부(30)를 포함하여 구성된다. 따라서, 기본적으로 사용자가 자유자재로 원하는 특정 에너지 대역의 에너지만을 선별적으로 결정할 수 있게 되어 이에 따라 측정하고자 하는 물질에 상응하는 최적의 모노크로매틱의 엑스선 영상을 얻을 수 있다.
Abstract:
The invention relates to an electrode comprising a substrate (1) and a layered structure comprising an electrically conductive film (2) in contact with at least one ultra thin metal film (3), wherein the two films (2,3) are of different materials and - said electrically conductive film (2) is selected from Cu, Au, Ag, Al - said ultra thin metal film (3) is selected from Ni, Cr, Ti, Pt, Ag, Au, Al and their mixtures. The electrode is particularly useful for optoelectronic devices and shows good conductivity, transparency and stability.
Abstract:
The invention relates to an improved EUV reflecting element comprising a) a first layer essentially made out of a highly reflective material b) a second layer having a thickness of ≤5 nm and essentially made out of a material with a sputter resistance of ≤10nm per 10 8 shots and whereby the second layer is provided in the path of the incident and/or reflected EUV light.
Abstract:
A collector optical system for extreme ultraviolet (EUV) or X-ray applications, including lithography and imaging, for example at 13 5 nm, comprising a grazing incidence collector in combination with a laser produced plasma (LPP) source In one embodiment, one or more further optical elements act upon one or more laser beams used to generate the EUV or X-ray plasma source, whereby said laser beam(s) ?mpact(s) on the fuel target from a side thereof on which an intermediate focus is disposed Also disclosed is a collector for EUV and X-ray applications, in which radiation from a laser produced plasma source is reflected by the collector to an intermediate focus, the line joining the source and intermediate focus defining an optical axis, a first direction on the optical axis being defined from the source to the intermediate focus, characterised by the collector comprising one or more grazing incidence mirrors, and by the collector comprising one or more further optical elements for redirecting a received laser beam so as to be incident upon the source (a) in a second direction, opposite to said first direction, or (b) at an acute angle to said second direction The further optical elements may comprise plane or spherical mirrors and/or lenses, for example disposed on the optical axis Also disclosed is a collector for application at about 13 5 nm with Laser Produced Plasma sources, the collector comprising between 5 and 16 concentrically aligned mirrors, and preferably between 6 and 12 mirrors, that operate at grazing incidence such that the maximum grazing angle between the incident radiation and the reflective surface of the mirrors is about 30°, and more preferably about 25°, in order to allow a maximum collection angle from the source of about 40° to about 85°, and preferably about 45° to about 75° Also disclosed is an EUV lithography system comprising a radiation source, for example a LPP source, the collector, an optical condenser, and a reflective mask