Quantum inclusion effect lateral field emitter
    81.
    发明授权
    Quantum inclusion effect lateral field emitter 失效
    量子夹杂效应横向场发射器

    公开(公告)号:US5721467A

    公开(公告)日:1998-02-24

    申请号:US707454

    申请日:1996-09-04

    CPC classification number: H01J1/3042 H01J2201/30423

    Abstract: A field emission cold cathode is disclosed which comprises a first thin film formed of an emitting material and second thin films differing in composition from the first thin film, wherein the second thin films are superposed one each on the main surfaces of the first thin film to form a laminated structure, the lateral sides of the laminated structure expose the lateral end parts of the first thin film and the second thin films, and the exposed end parts of the first thin film emit electrons under an electric field. A method for the production of the cold cathode is also disclosed.

    Abstract translation: 公开了一种场致发射冷阴极,其包括由发光材料形成的第一薄膜和与第一薄膜不同的第二薄膜,其中第二薄膜各自叠置在第一薄膜的主表面上, 形成层叠结构,层叠结构的侧面暴露第一薄膜和第二薄膜的侧端部,并且第一薄膜的暴露端部在电场下发射电子。 还公开了制造冷阴极的方法。

    Edge electron emitters for an array of FEDS
    82.
    发明授权
    Edge electron emitters for an array of FEDS 失效
    用于FEDS阵列的边缘电子发射器

    公开(公告)号:US5691600A

    公开(公告)日:1997-11-25

    申请号:US489017

    申请日:1995-06-08

    Abstract: A plurality of edge emitters in a FED array include a plate shaped substrate having parallel, laterally spaced apart grooves formed in a first surface and parallel, laterally spaced apart grooves formed in the opposite surface so that each second groove crosses each first groove at an angle. The combined depths of the grooves is greater than the thickness of the plate substrate so that an opening is formed through the substrate at each point where a second groove crosses a first groove. Gate metal is deposited on the surfaces in the openings and emitter material is deposited on the lands of the first surface to form FED emitters in each opening.

    Abstract translation: FED阵列中的多个边缘发射器包括板形基板,该板状基板具有形成在第一表面中的平行的横向间隔开的槽,并且在相对表面中形成平行的横向间隔开的槽,使得每个第二槽以一定角度与每个第一槽交叉 。 槽的组合深度大于板基板的厚度,使得在第二槽与第一槽交叉的每个点处通过基板形成开口。 栅极金属沉积在开口的表面上,发射体材料沉积在第一表面的焊盘上,以在每个开口中形成FED发射体。

    Direct electron injection field-emission display device
    83.
    发明授权
    Direct electron injection field-emission display device 失效
    直接电子注入场发射显示装置

    公开(公告)号:US5644190A

    公开(公告)日:1997-07-01

    申请号:US498505

    申请日:1995-07-05

    CPC classification number: H01J9/025 H01J31/127 H01J2201/30423 H01J2329/00

    Abstract: A lateral-emitter electron field-emission display device structure incorporates a thin-film emitter having an emitting edge in direct contact with and extending into a non-conducting or very high resistivity phosphor, thereby eliminating the gap between the emitter and the phosphor. Such a gap has been a part of all field-emission display devices in the prior art. The ultra-thin-film lateral emitter of the new structure is deposited in a plane parallel to the device's substrate and has an inherently small radius of curvature at its emitting edge. A fabrication process specially adapted to make the new structure includes a directional trench etch, which both defines the emitting edge and provides an opening to receive a non-conducting phosphor. This phosphor covers an anode and is automatically aligned in contact with the emitter edge. When an electrical bias voltage is applied between the emitter and anode, electrons are injected directly into the phosphor material from the emitter edge, exciting cathodoluminescence in the phosphor to emit light which is visible in a wide range of viewing angles. With minor variations in the fabrication process, a lateral-emitter electron field emission display device may be made with an extremely small emitter-phosphor gap, having a width less than 100 times the thickness of the ultra-thin emitter. Embodiments in which the gap width is zero are characterized as edge-contact light-emitting diodes (or triodes or tetrodes if they include control electrodes).

    Abstract translation: 横向发射极电子场发射显示器件结构包括具有与非导电或非常高电阻率的磷光体直接接触并延伸到非导电或非常高电阻率的磷光体中的发射边缘的薄膜发射器,从而消除了发射极和磷光体之间的间隙。 这样的间隙已经是现有技术中的所有场致发射显示装置的一部分。 新结构的超薄膜横向发射体沉积在平行于器件的衬底的平面中,并且在其发射边缘处具有固有的小的曲率半径。 专门用于制造新结构的制造工艺包括定向沟槽蚀刻,其定义了发射边缘并且提供用于接收非导电磷光体的开口。 该荧光体覆盖阳极并自动对准与发射极边缘接触。 当在发射极和阳极之间施加电偏压时,电子从发射极边缘直接注入到荧光体材料中,激发荧光体中的阴极发光,发射在宽视角范围内可见的光。 在制造工艺中有微小变化的情况下,横向发射极电子场发射显示装置可以制造成具有极小的发射 - 磷光体间隙,其宽度小于超薄发射极的厚度的100倍。 间隙宽度为零的实施例的特征在于边缘接触式发光二极管(或三极管或四极管,如果它们包括控制电极)。

    Thin-film edge field emitter device and method of manufacture therefor
    84.
    发明授权
    Thin-film edge field emitter device and method of manufacture therefor 失效
    薄膜边缘场发射器件及其制造方法

    公开(公告)号:US5382185A

    公开(公告)日:1995-01-17

    申请号:US40944

    申请日:1993-03-31

    CPC classification number: H01J9/025 H01J1/3042 H01J2201/30423 H01J2201/319

    Abstract: Thin-film edge field emitter devices are provided which are capable of low voltage operation. The method of manufacture of the devices takes advantage of chemical beam deposition and other thin-film fabrication techniques. Both gated and ungated devices are provided and all of the devices include a plurality of thin-films deposited on the side-wall of a non-flat substrate. The gated emitter devices include alternating conductive and electrically insulating layers, and upper parts of the latter are removed to expose the upper edges of the conductive layers, with a central one of these conductive layers comprising an emitter for emitting electrons. The emitter devices can be inexpensively produced with a high degree of precision and reproducibility without the need for expensive lithographic machines. The devices can be used in field emitter arrays employed as vacuum transistors, vacuum microelectronic analog and digital devices, and modulated or cold electron sources.

    Abstract translation: 提供能够进行低电压操作的薄膜边缘场发射极器件。 该装置的制造方法利用化学束沉积和其它薄膜制造技术。 提供了门控和非门装置,并且所有装置都包括沉积在非平板基板的侧壁上的多个薄膜。 门控发射极器件包括交替的导电和电绝缘层,并且去除其上部,以暴露导电层的上边缘,这些导电层中的一个包括用于发射电子的发射极。 发射极器件可以以高精度和重现性廉价地生产,而不需要昂贵的光刻机。 这些器件可用于作为真空晶体管的真空发射极阵列,真空微电子模拟和数字器件以及调制或冷电子源。

    FIELD-EMISSION MATRIX DISPLAY BASED ON ELECTRON REFLECTIONS
    86.
    发明申请
    FIELD-EMISSION MATRIX DISPLAY BASED ON ELECTRON REFLECTIONS 审中-公开
    基于电子反射的场发射矩阵显示

    公开(公告)号:WO2002086934A1

    公开(公告)日:2002-10-31

    申请号:PCT/US2002/011028

    申请日:2002-04-10

    CPC classification number: H01J9/025 H01J1/3046 H01J31/127 H01J2201/30423

    Abstract: A Reflective Field Emission Display (FED) system using reflective field emission pixel elements (100) is disclosed. In the FED system disclosed, each pixel elements (100) is composed of at least one edge emitter (140) that is operable to emit electrons and at least one reflector (110) that is operable to first attract and then reflect the emitted electrons. The transparent anode layer (180) is oppositely positioned with respect to the cathode or emitter edge (140). In a one aspect of the invention , a phosphor layer (195) interposed between the transparent layer (180) and the pixel element (100) produces a light photon as reflected electrons are attracted to the transparent layer (180). In another aspect of the invention, a plurality of phosphor layers (196, 197, 198) are applied to the transparent layer (180) to produce a color display when reflected electrons are attached to the transparent layer (180).

    Abstract translation: 公开了使用反射场发射像素元件(100)的反射场发射显示(FED)系统。 在所公开的FED系统中,每个像素元件(100)由可操作以发射电子的至少一个边缘发射器(140)和至少一个可操作以首先吸引然后反射所发射的电子的反射器(110)组成。 透明阳极层(180)相对于阴极或发射极边缘(140)相对定位。 在本发明的一个方面中,当透明层(180)和像素元件(100)之间插入的荧光体层(195)产生光子,因为反射的电子被吸引到透明层(180)。 在本发明的另一方面,当透明层(180)附着反射电子时,将多个荧光体层(196,197,198)施加到透明层(180)上以产生彩色显示。

    FIELD-EMISSION MATRIX DISPLAY BASED ON LATERAL ELECTRON REFLECTIONS
    87.
    发明申请
    FIELD-EMISSION MATRIX DISPLAY BASED ON LATERAL ELECTRON REFLECTIONS 审中-公开
    基于横向电子反射的场发射矩阵显示

    公开(公告)号:WO2002086931A1

    公开(公告)日:2002-10-31

    申请号:PCT/US2002/011190

    申请日:2002-04-10

    CPC classification number: H01J1/3046 H01J9/025 H01J31/127 H01J2201/30423

    Abstract: A Reflective Field Emission Display system, components and methods for fabricating the components is disclosed. In the FED system disclosed, a plurality of reflective edge emission pixed elements (10) are arranged in a matrix of N rows and M columns, the pixel elements contain an edge emitter (140) that is operable to emit electrons and a reflector (110) that is operable to extract and laterally reflect emitted electrons. A collector layer (310), laterally disposed from said reflector layer (110) is operable to attract the reflected electrons. Deposited on the collector layer (310) is a phosphor layer (195) that emits a photon of a known wavelength when activated by an attracted electron. A transparent layer (185) that is oppositely positioned with respect to the pixel elements (100) is operable to attract reflected electrons and prevent reflected electrons from striking the phosphor layer (195). Color displays are further contemplated by incorporating individually controlled sub-pixel elements in each of the pixel elements (100). The phosphor layers (195) emit photons having wavelenghts in the red, green or blue color spectrum.

    Abstract translation: 公开了一种反射场发射显示系统,用于制造组件的部件和方法。 在公开的FED系统中,多个反射边缘发射像素元件(10)以N行M列排列成矩阵,像素元件包含可发射电子的边缘发射器(140)和反射器(110) ),其可操作以提取并横向反射发射的电子。 从所述反射器层(110)横向设置的集电极层(310)可操作以吸引反射的电子。 沉积在集电极层(310)上的是被吸引的电子激发时发射已知波长的光子的磷光体层(195)。 相对于像素元件(100)相对定位的透明层(185)可操作以吸引反射的电子并防止反射的电子撞击荧光体层(195)。 通过在每个像素元件(100)中并入独立控制的子像素元件,进一步考虑了彩色显示器。 荧光体层(195)发射具有红色,绿色或蓝色色谱波长的光子。

    FIELD EMITTER CELL AND ARRAY WITH VERTICAL THIN-FILM-EDGE EMITTER
    88.
    发明申请
    FIELD EMITTER CELL AND ARRAY WITH VERTICAL THIN-FILM-EDGE EMITTER 审中-公开
    现场发射单元和阵列与垂直薄膜边缘发射器

    公开(公告)号:WO00060630A1

    公开(公告)日:2000-10-12

    申请号:PCT/US1999/009282

    申请日:1999-04-01

    CPC classification number: H01J3/022 H01J2201/30423 H01J2201/30446

    Abstract: A field emitter cell (10) includes a thin film edge emitter (22) normal to a gate layer (18). The field emitter is a multilayer structure including a low work function material sandwiched between two protective layers. The field emitter may be fabricated from a composite starting structure including a conductive substrate layer (12), an insulation layer (16), a standoff layer (24) and a gate layer (18), with a perforation (20) extending from the gate layer into the substrate layer. The emitter material is conformally deposited by chemical beam deposition along the sidewalls of the perforation. Alternatively, the starting material may be a conductive substrate having a protrusion thereon. The emitter layer, standoff layer, insulation layer, and gate layer are sequentially deposited, and the unwanted portions of each are preferentially removed to provide the desired structure.

    Abstract translation: 场发射极单元(10)包括垂直于栅极层(18)的薄膜边缘发射极(22)。 场致发射体是包含夹在两个保护层之间的低功函数材料的多层结构。 场发射器可以由包括导电基底层(12),绝缘层(16),隔离层(24)和栅极层(18)的复合起始结构制成,其中穿孔(20)从 栅极层进入衬底层。 发射体材料通过化学束沉积沿着穿孔的侧壁共形沉积。 或者,起始材料可以是其上具有突起的导电基底。 顺序地沉积发射极层,隔离层,绝缘层和栅极层,并且优先除去其中不需要的部分以提供所需的结构。

    FABRICATION PROCESS FOR HERMETICALLY SEALED CHAMBER IN SUBSTRATE
    89.
    发明申请
    FABRICATION PROCESS FOR HERMETICALLY SEALED CHAMBER IN SUBSTRATE 审中-公开
    衬底中密封室的制造工艺

    公开(公告)号:WO1996038855A1

    公开(公告)日:1996-12-05

    申请号:PCT/US1996008237

    申请日:1996-05-31

    CPC classification number: H01J9/025 H01J3/022 H01J2201/30423 H01J2209/385

    Abstract: A process for fabricating, in a planar substrate, a hermetically sealed chamber for a field-emission cell or the like, allows operating the device in a vacuum or a low pressure inert gas. The process includes methods of covering an opening (160), enclosing the vacuum or gas, and methods of including an optional quantity of gettering material. An example of a device using such a hermetically sealed chamber is a lateral-emitter field-emission device (10) having a lateral emitter (100) parallel to a substrate (20) and having a simplified anode structure (70). In one simple embodiment, a control electrode (140) is positioned in a plane above the emitter edge (110) and automatically aligned to that edge. The simplified devices are specially adapted for field emission display arrays. An overall fabrication process uses steps (S1-S18) to produce the devices and arrays. Various embodiments of the fabrication process allow the use of conductive or insulating substrates (20), allow fabrication of devices having various functions and complexity, and allow covering a trench opening (160) etched through the emitter and insulator, thus enclosing the hermetically sealed chamber.

    Abstract translation: 在平面基板中制造用于场致发射电池等的气密密封室的方法允许在真空或低压惰性气体中操作该装置。 该方法包括覆盖封闭真空或气体的开口(160)的方法以及包括任选数量的吸气材料的方法。 使用这种密封室的装置的实例是具有平行于基板(20)并且具有简化的阳极结构(70)的横向发射器(100)的横向发射极场发射装置(10)。 在一个简单的实施例中,控制电极(140)被定位在发射器边缘(110)上方的平面中并且自动对准该边缘。 简化的设备专门用于场发射显示阵列。 整个制造过程使用步骤(S1-S18)来产生器件和阵列。 制造工艺的各种实施例允许使用导电或绝缘衬底(20),允许制造具有各种功能和复杂性的器件,并且允许覆盖通过发射器和绝缘体蚀刻的沟槽开口(160),从而封闭密封的腔室 。

    전자방출원, 어레이형 전자방출원, 전자방출소자 및 그 제조방법
    90.
    发明公开
    전자방출원, 어레이형 전자방출원, 전자방출소자 및 그 제조방법 有权
    电子发射源,阵列电子发射源,电子发射装置及其制造方法

    公开(公告)号:KR1020160098724A

    公开(公告)日:2016-08-19

    申请号:KR1020150020670

    申请日:2015-02-11

    Abstract: 본발명에서는나노소재박막의에지(Edge) 면을이용하는전자방출원, 전자방출소자, 어레이형전자방출원, 전자방출소자의제조방법, 및어레이형전자방출원의제조방법이제안된다. 본발명의일 실시예에따른전자방출소자는제 1 금속부재, 제 1 금속부재와소정의간격을두고나란하게배치된제 2 금속부재, 및제 1 금속부재에의해둘러싸여고정되고제 2 금속부재를향하여노출된에지(Edge) 면을가지는나노소재박막을포함한다.

    Abstract translation: 本发明提供一种使用具有纳米材料的具有高电场发射效率的薄膜的边缘表面的电子发射源,电子发射器件,阵列电子发射源,用于制造电子发射器件的方法和方法 用于制造阵列电子发射源。 根据本发明的实施例,电子发射装置包括:第一金属构件; 第二金属构件,其布置成与所述第一金属构件具有预定距离的平行; 以及具有通过被第一构件包围而固定的纳米材料的薄膜,并且具有朝向第二金属构件露出的边缘表面。

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