Abstract:
A field emission cold cathode is disclosed which comprises a first thin film formed of an emitting material and second thin films differing in composition from the first thin film, wherein the second thin films are superposed one each on the main surfaces of the first thin film to form a laminated structure, the lateral sides of the laminated structure expose the lateral end parts of the first thin film and the second thin films, and the exposed end parts of the first thin film emit electrons under an electric field. A method for the production of the cold cathode is also disclosed.
Abstract:
A plurality of edge emitters in a FED array include a plate shaped substrate having parallel, laterally spaced apart grooves formed in a first surface and parallel, laterally spaced apart grooves formed in the opposite surface so that each second groove crosses each first groove at an angle. The combined depths of the grooves is greater than the thickness of the plate substrate so that an opening is formed through the substrate at each point where a second groove crosses a first groove. Gate metal is deposited on the surfaces in the openings and emitter material is deposited on the lands of the first surface to form FED emitters in each opening.
Abstract:
A lateral-emitter electron field-emission display device structure incorporates a thin-film emitter having an emitting edge in direct contact with and extending into a non-conducting or very high resistivity phosphor, thereby eliminating the gap between the emitter and the phosphor. Such a gap has been a part of all field-emission display devices in the prior art. The ultra-thin-film lateral emitter of the new structure is deposited in a plane parallel to the device's substrate and has an inherently small radius of curvature at its emitting edge. A fabrication process specially adapted to make the new structure includes a directional trench etch, which both defines the emitting edge and provides an opening to receive a non-conducting phosphor. This phosphor covers an anode and is automatically aligned in contact with the emitter edge. When an electrical bias voltage is applied between the emitter and anode, electrons are injected directly into the phosphor material from the emitter edge, exciting cathodoluminescence in the phosphor to emit light which is visible in a wide range of viewing angles. With minor variations in the fabrication process, a lateral-emitter electron field emission display device may be made with an extremely small emitter-phosphor gap, having a width less than 100 times the thickness of the ultra-thin emitter. Embodiments in which the gap width is zero are characterized as edge-contact light-emitting diodes (or triodes or tetrodes if they include control electrodes).
Abstract:
Thin-film edge field emitter devices are provided which are capable of low voltage operation. The method of manufacture of the devices takes advantage of chemical beam deposition and other thin-film fabrication techniques. Both gated and ungated devices are provided and all of the devices include a plurality of thin-films deposited on the side-wall of a non-flat substrate. The gated emitter devices include alternating conductive and electrically insulating layers, and upper parts of the latter are removed to expose the upper edges of the conductive layers, with a central one of these conductive layers comprising an emitter for emitting electrons. The emitter devices can be inexpensively produced with a high degree of precision and reproducibility without the need for expensive lithographic machines. The devices can be used in field emitter arrays employed as vacuum transistors, vacuum microelectronic analog and digital devices, and modulated or cold electron sources.
Abstract:
A Reflective Field Emission Display (FED) system using reflective field emission pixel elements (100) is disclosed. In the FED system disclosed, each pixel elements (100) is composed of at least one edge emitter (140) that is operable to emit electrons and at least one reflector (110) that is operable to first attract and then reflect the emitted electrons. The transparent anode layer (180) is oppositely positioned with respect to the cathode or emitter edge (140). In a one aspect of the invention , a phosphor layer (195) interposed between the transparent layer (180) and the pixel element (100) produces a light photon as reflected electrons are attracted to the transparent layer (180). In another aspect of the invention, a plurality of phosphor layers (196, 197, 198) are applied to the transparent layer (180) to produce a color display when reflected electrons are attached to the transparent layer (180).
Abstract:
A Reflective Field Emission Display system, components and methods for fabricating the components is disclosed. In the FED system disclosed, a plurality of reflective edge emission pixed elements (10) are arranged in a matrix of N rows and M columns, the pixel elements contain an edge emitter (140) that is operable to emit electrons and a reflector (110) that is operable to extract and laterally reflect emitted electrons. A collector layer (310), laterally disposed from said reflector layer (110) is operable to attract the reflected electrons. Deposited on the collector layer (310) is a phosphor layer (195) that emits a photon of a known wavelength when activated by an attracted electron. A transparent layer (185) that is oppositely positioned with respect to the pixel elements (100) is operable to attract reflected electrons and prevent reflected electrons from striking the phosphor layer (195). Color displays are further contemplated by incorporating individually controlled sub-pixel elements in each of the pixel elements (100). The phosphor layers (195) emit photons having wavelenghts in the red, green or blue color spectrum.
Abstract:
A field emitter cell (10) includes a thin film edge emitter (22) normal to a gate layer (18). The field emitter is a multilayer structure including a low work function material sandwiched between two protective layers. The field emitter may be fabricated from a composite starting structure including a conductive substrate layer (12), an insulation layer (16), a standoff layer (24) and a gate layer (18), with a perforation (20) extending from the gate layer into the substrate layer. The emitter material is conformally deposited by chemical beam deposition along the sidewalls of the perforation. Alternatively, the starting material may be a conductive substrate having a protrusion thereon. The emitter layer, standoff layer, insulation layer, and gate layer are sequentially deposited, and the unwanted portions of each are preferentially removed to provide the desired structure.
Abstract:
A process for fabricating, in a planar substrate, a hermetically sealed chamber for a field-emission cell or the like, allows operating the device in a vacuum or a low pressure inert gas. The process includes methods of covering an opening (160), enclosing the vacuum or gas, and methods of including an optional quantity of gettering material. An example of a device using such a hermetically sealed chamber is a lateral-emitter field-emission device (10) having a lateral emitter (100) parallel to a substrate (20) and having a simplified anode structure (70). In one simple embodiment, a control electrode (140) is positioned in a plane above the emitter edge (110) and automatically aligned to that edge. The simplified devices are specially adapted for field emission display arrays. An overall fabrication process uses steps (S1-S18) to produce the devices and arrays. Various embodiments of the fabrication process allow the use of conductive or insulating substrates (20), allow fabrication of devices having various functions and complexity, and allow covering a trench opening (160) etched through the emitter and insulator, thus enclosing the hermetically sealed chamber.