公开(公告)号：US06917058B2

公开(公告)日：2005-07-12

申请号：US10433060

申请日：2001-12-18

Applicant: Minoru Niigaki ,  Toru Hirohata ,  Hirofumi Kan ,  Kuniyoshi Mori

Inventor： Minoru Niigaki ,  Toru Hirohata ,  Hirofumi Kan ,  Kuniyoshi Mori

IPC: H01J1/34 ,  H01J29/38 ,  H01J31/50 ,  H01J40/06 ,  H01L29/24

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: In the case of a thick light-absorbing layer 2, a phenomenon of a decrease in the time resolution occurs. However, when the thickness of the light-absorbing layer 2 is limited, a portion of low electron concentration in one electron group is cut out, and hence overlap regions of adjacent electron concentration distributions decrease. Therefore, by shortening the transit time necessary for the passage of electrons, regions of overlapping electron distributions due to diffusion can also be suppressed. Furthermore, the strength of an electric field within a light-absorbing layer can be increased by thinning the light-absorbing layer. Therefore, the time resolution of infrared rays can be remarkably improved by a synergistic action of these effects. If it is assumed that the time resolution is 40 ps (picoseconds), for example, when the thickness of a light-absorbing layer is 1.3 μm which is nearly equal to the wavelength of infrared, then a possible time resolution is 7.5 ps when this thickness is 0.19 μm.

Abstract translation: 在厚光吸收层2的情况下，会发生时间分辨率降低的现象。 然而，当光吸收层2的厚度受限时，一个电子组中的低电子浓度部分被切掉，因此相邻电子浓度分布的重叠区域减小。 因此，通过缩短电子通过所需的通行时间，也可以抑制由扩散引起的重叠电子分布的区域。 此外，可以通过使光吸收层变薄来增加光吸收层内的电场强度。 因此，通过这些效果的协同作用，可以显着提高红外线的时间分辨率。 如果假设时间分辨率为40ps（皮秒），例如，当光吸收层的厚度为1.3μm，几乎等于红外线的波长时，则当这样的时间分辨率为7.5ps时 厚度为0.19毫米。

公开(公告)号：US20020180343A1

公开(公告)日：2002-12-05

申请号：US09871509

申请日：2001-05-31

Inventor： Arlynn Walter Smith ,  Rudolph George Benz

IPC: H01J001/62

CPC classification number: H01J31/50 ,  H01J1/34 ,  H01J2201/3423 ,  H01J2231/50026

Abstract: A cathode structure for an image intensifier tube operates to extend the spectral range of an image intensifier to the short wavelength infrared (SWIR) range of the electromagnetic spectrum, which is between 1.0 to 1.75 nullm. The cathode structure utilizes a multi-layer structure consisting of a layer of GaSb disposed upon a layer of GaAs. The layers form a heterojunction therebetween where the GaSb material absorbs radiation and the GaAs is for emission characteristics. The doping profiles in each material are used to maximize the effects of band gap offsets of the heterojunction as well as provide a nearly flat conduction band profile for the cathode structure. The condition of nearly flat conduction band is enhanced by the use of blocking contacts at the emission surface of the cathode, where a bias is applied.

Abstract translation: 用于图像增强管的阴极结构用于将图像增强器的光谱范围扩展到1.0至1.75μm之间的电磁光谱的短波长红外（SWIR）范围。 阴极结构使用由设置在GaAs层上的GaSb层组成的多层结构。 这些层在其间形成异质结，其中GaSb材料吸收辐射，并且GaAs用于发射特性。 每个材料中的掺杂分布用于最大化异质结的带隙偏移的影响，并且为阴极结构提供几乎平坦的导带分布。 通过在施加偏压的阴极的发射表面上使用阻挡接触来增强近乎平坦导带的条件。

公开(公告)号：US06201257B1

公开(公告)日：2001-03-13

申请号：US09120613

申请日：1998-07-22

Applicant: Roger Stettner ,  Howard W. Bailey

Inventor： Roger Stettner ,  Howard W. Bailey

IPC: H01L3100

CPC classification number: B82Y10/00 ,  G01T1/1644 ,  G01T1/24 ,  G01T1/28 ,  H01J1/34 ,  H01J2201/3423 ,  H01J2231/50031 ,  H01J2231/50063 ,  H01J2231/50068 ,  H01J2231/5056 ,  H01L27/14663

Abstract: An energy dispersive x-ray and gamma-ray photon counter is described. The counter uses a photon sensor which incorporates a unique photocathode called Advanced Semiconductor Emitter Technology for X-rays (ASET-X) as its critical element for converting the detected photons to electrons which are emitted into a vacuum. The electrons are multiplied by accelerations and collisions creating a signal larger than the sensor noise and thus allowing the photon to be energy resolved very accurately, to within ionization statistics. Because the signal is already above the sensor noise it does not have to be noise filtered therefore allowing high-speed counting. The photon sensor can also be used as a device to visualize and image gamma-ray and x-ray sources.

Abstract translation: 描述了能量色散X射线和γ射线光子计数器。 该计数器使用一个光子传感器，它将一个独特的光电阴极称为Advanced X射线发射器技术（ASET-X），作为将检测到的光子转换成真空发射的电子的关键元件。 电子乘以加速度和碰撞，产生大于传感器噪声的信号，从而使光子能够非常准确地被分解成电离统计。 由于信号已经高于传感器噪声，因此不必对噪声进行滤波，因此允许高速计数。 光子传感器也可以用作可视化和图像伽马射线和X射线源的装置。

公开(公告)号：US6040587A

公开(公告)日：2000-03-21

申请号：US208861

申请日：1998-12-10

Applicant: Katsumi Kishino ,  Toshihiro Kato

Inventor： Katsumi Kishino ,  Toshihiro Kato

IPC: H01J1/34 ,  H01J37/073 ,  H01L29/06

CPC classification number: H01J37/073 ,  H01J1/34 ,  H01J2201/3423 ,  H01J2203/0296 ,  H01J2237/06383

Abstract: An electron emitting element including a semiconductor opto-electronic layer having a split valence band and capable of emitting a beam of spin-polarized electrons from an emitting surface thereof upon incidence of an excitation laser radiation upon the emitting surface, and a reflecting mirror formed on one of opposite sides of the opto-electronic layer remote from the emitting surface and cooperating with the emitting surface to effect multiple reflection therebetween of the incident laser radiation. The emitting element may be provided with a semiconductor light modulator element for modulating the intensity of the laser radiation incident upon the opto-electronic layer. A laser source may be formed integrally with the emitting element and disposed on the side of the opto-electronic layer remote from the emitting surface.

Abstract translation: 一种电子发射元件，包括具有分裂价带的半导体光电子层，并且能够在发射表面上引入激发激光辐射时从其发射表面发射自旋极化电子束;以及反射镜，形成在 远离发射表面的光电子层的相对侧之一与发射表面配合以在入射激光辐射之间实现多次反射。 发光元件可以设置有用于调制入射在光电子层上的激光辐射的强度的半导体光调制元件。 激光源可以与发光元件一体地形成并且设置在远离发射表面的光电子层的侧面上。

公开(公告)号：US5932966A

公开(公告)日：1999-08-03

申请号：US987397

申请日：1997-12-09

Applicant: James E. Schneider ,  Kenneth A. Costello ,  Mark A. McCord ,  R. Fabian Pease ,  Aaron W. Baum

Inventor： James E. Schneider ,  Kenneth A. Costello ,  Mark A. McCord ,  R. Fabian Pease ,  Aaron W. Baum

IPC: H01J40/06 ,  G03F7/20 ,  H01J3/02 ,  H01J27/04 ,  H01J37/073 ,  H01J37/075 ,  H01J40/16

CPC classification number: G03F7/70375 ,  H01J27/04 ,  H01J3/021 ,  H01J37/073 ,  H01J37/075 ,  H01J40/16 ,  H01J2201/3423 ,  H01J2237/06333 ,  H01J2237/31779

Abstract: An electron source includes a negative electron affinity photocathode on a light-transmissive substrate and a light beam generator for directing a light beam through the substrate at the photocathode for exciting electrons into the conduction band. The photocathode has at least one active area for emission of electrons with dimensions of less than about two micrometers. The electron source further includes electron optics for forming the electrons into an electron beam and a vacuum enclosure for maintaining the photocathode at high vacuum. The photocathode is patterned to define emission areas. A patterned mask may be located on the emission surface of the active layer, may be buried within the active layer or may be located between the active layer and the substrate.

Abstract translation: 电子源包括透光性基板上的负电子亲合性光电阴极和光束发生器，用于将光束引导到光电阴极处的基板，用于将电子激发到导带中。 光电阴极具有用于发射尺寸小于约两微米的电子的至少一个有源面积。 电子源还包括用于将电子形成电子束的电子光学器件和用于将光电阴极保持在高真空的真空外壳。 图案化光电阴极以限定发射区域。 图案化掩模可以位于有源层的发射表面上，可以被掩埋在有源层内或者可以位于有源层和衬底之间。

公开(公告)号：US5789759A

公开(公告)日：1998-08-04

申请号：US754762

申请日：1996-11-21

Applicant: Arlynn W. Smith ,  Warren David Vrescak

Inventor： Arlynn W. Smith ,  Warren David Vrescak

IPC: H01J1/34 ,  H01J9/12 ,  H01L29/06 ,  H01L29/12

CPC classification number: H01J9/12 ,  H01J1/34 ,  H01J2201/3423 ,  H01J2231/5001

Abstract: A photocathode device for use in an image intensifier, fabricated with a photoemissive semiconductor wafer having an active cathode layer which includes a central region of a first predetermined height surrounded by a peripheral region of a second predetermined height. The first predetermined height of the central region is configured to be greater than the second predetermined height of the peripheral region in order to create a recessed contact structure which is less likely to have unwanted emission points. A layer of conductive material covers the peripheral region to provide an electrical contact to the photocathode device. A layer of insulating material covers the layer of conductive material in order to protect the contact layer from being damage during handling operations.

公开(公告)号：US5747862A

公开(公告)日：1998-05-05

申请号：US124624

申请日：1993-09-22

Applicant: Katsumi Kishino ,  Toshihiro Kato

Inventor： Katsumi Kishino ,  Toshihiro Kato

IPC: H01J1/34 ,  H01J37/073 ,  H01L31/0304

CPC classification number: H01J37/073 ,  H01J1/34 ,  H01J2201/3423 ,  H01J2203/0296 ,  H01J2237/06383

Abstract: An electron emitting element including a semiconductor opto-electronic layer having a split valence band and capable of emitting a beam of spin-polarized electrons from an emitting surface thereof upon incidence of an excitation laser radiation upon the emitting surface, and a reflecting mirror formed on one of opposite sides of the opto-electronic layer remote from the emitting surface and cooperating with the emitting surface to effect multiple reflection therebetween of the incident laser radiation. The emitting element may be provided with a semiconductor light modulator element for modulating the intensity of the laser radiation incident upon the opto-electronic layer. A laser source may be formed integrally with the emitting element and disposed on the side of the opto-electronic layer remote from the emitting surface.

Abstract translation: 一种电子发射元件，包括具有分裂价带的半导体光电子层，并且能够在发射表面上引入激发激光辐射时从其发射表面发射自旋极化电子束;以及反射镜，形成在 远离发射表面的光电子层的相对侧之一与发射表面配合以在入射激光辐射之间实现多次反射。 发光元件可以设置有用于调制入射在光电子层上的激光辐射的强度的半导体光调制元件。 激光源可以与发光元件一体地形成并且设置在远离发射表面的光电子层的侧面上。

公开(公告)号：US5378960A

公开(公告)日：1995-01-03

申请号：US089771

申请日：1993-07-12

Applicant: G. William Tasker ,  Jerry R. Horton

Inventor： G. William Tasker ,  Jerry R. Horton

IPC: H01J9/12 ,  H01J43/24 ,  H01J49/02 ,  H01J43/04

CPC classification number: H01J43/246 ,  H01J49/025 ,  H01J9/12 ,  H01J2201/32 ,  H01J2201/3423

Abstract: A continuous thin film dynode includes a substrate with at least one channel having a channel wall, an isolation layer overlying the channel wall, and a thin film overlying the isolation layer. The thin film includes a current carrying portion and an electron emissive portion overlying the current carrying portion. The electron emissive portion is essentially free of a material which is silica-rich, alkali-rich, and lead-poor. The current carrying portion is essentially free of a material which is lead-rich.

Abstract translation: 连续薄膜倍增极包括具有至少一个通道的衬底，其具有通道壁，覆盖通道壁的隔离层和覆盖隔离层的薄膜。 薄膜包括载流部分和覆盖载流部分的电子发射部分。 电子发射部分基本上不含富二氧化硅，富碱和贫铅的材料。 载流部分基本上不含富铅的材料。

公开(公告)号：US5304815A

公开(公告)日：1994-04-19

申请号：US94404

申请日：1993-07-21

Applicant: Akira Suzuki ,  Takeo Tsukamoto ,  Akira Shimizu ,  Masao Sugata ,  Isamu Shimoda ,  Masahiko Okunuki

Inventor： Akira Suzuki ,  Takeo Tsukamoto ,  Akira Shimizu ,  Masao Sugata ,  Isamu Shimoda ,  Masahiko Okunuki

IPC: H01J1/308 ,  H01J1/34 ,  H01L27/14 ,  H01J29/12 ,  H01L31/00

CPC classification number: H01J1/308 ,  H01J1/34 ,  H01J2201/3423

Abstract: An electron emission element comprises a P-type semiconductor substrate and electrodes formed on both ends of the semiconductor substrate. A voltage is applied between said electrodes. The P-type semiconductor substrate is irradiated with light to emit the electrons, generated in the P-type semiconductor substrate by photoexcitation, from an electron emitting face at an end of the P-type semiconductor substrate.

Abstract translation: 电子发射元件包括P型半导体衬底和形成在半导体衬底两端的电极。 在所述电极之间施加电压。 P型半导体衬底被照射从P型半导体衬底的端部的电子发射面通过光激发发射在P型半导体衬底中产生的电子。

公开(公告)号：US5205902A

公开(公告)日：1993-04-27

申请号：US789975

申请日：1991-11-12

Applicant: Jerry R. Horton ,  G. William Tasker

Inventor： Jerry R. Horton ,  G. William Tasker

IPC: H01J9/12 ,  H01J43/24

CPC classification number: H01J43/246 ,  H01J9/12 ,  H01J2201/32 ,  H01J2201/3423 ,  H01J2201/3426

Abstract: A microchannel plate and method is disclosed. In a preferred embodiment the microchannel plate is a water of anisotropically etchable material having been subjected to a directionally applied flux of reactive particles against at least one face of the wafer in selected areas corresponding to microchannel locations. The flux removes material from the selected areas to produce microchannels in the wafer in accordance with the directionality of the applied flux.

Abstract translation: 公开了一种微通道板和方法。 在优选实施例中，微通道板是各向异性可蚀刻材料的水，其已经在对应于微通道位置的选定区域中经过定向施加的反应性颗粒的流量抵靠晶片的至少一个面。 通量从选定区域去除材料，以根据施加的焊剂的方向性在晶片中产生微通道。