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    AMPLIFICATEUR RADIOFRÉQUENCE
    2.
    发明申请
    AMPLIFICATEUR RADIOFRÉQUENCE 审中-公开

    公开(公告)号：WO2021165213A1

    公开(公告)日：2021-08-26

    申请号：PCT/EP2021/053678

    申请日：2021-02-15

    Applicant: STMICROELECTRONICS INTERNATIONAL N.V.

    Inventor： LEMOINE, Renaud ,  OUYAHIA, Samia ,  WILHELM, Eric ,  BOYAVALLE, Christophe

    IPC: H03F1/02

    Abstract: Selon un aspect, il est proposé un circuit intégré comprenant un amplificateur radiofréquence comportant: - au moins deux étages amplificateurs (DS, PS), - un dispositif d'adaptation d'impédance (DAI) entre deux étages amplificateurs (DS, PS) de l'amplificateur radiofréquence, le dispositif d'adaptation comprenant deux lignes (L1, L2) couplées par induction électromagnétique, une première ligne (L1) étant reliée à une sortie du premier étage amplificateur (DS) et une deuxième ligne (L2) étant reliée à une entrée du deuxième étage amplificateur (PS).

    AMPLIFICATEUR DE PUISSANCE RADIOFREQUENCE
    3.
    发明申请
    AMPLIFICATEUR DE PUISSANCE RADIOFREQUENCE 审中-公开

    公开(公告)号：WO2021165212A1

    公开(公告)日：2021-08-26

    申请号：PCT/EP2021/053677

    申请日：2021-02-15

    Applicant: STMICROELECTRONICS INTERNATIONAL N.V.

    Inventor： GUEGNAUD, Hervé ,  VENEC, Stéphanie ,  BLAMON, Guillaume

    IPC: H03F1/52 ,  H03F1/34 ,  H03F3/19 ,  H03G3/30 ,  H03F3/24

    Abstract: Selon un aspect, il est proposé un circuit intégré comprenant un amplificateur de puissance comportant : • une succession d'au moins deux étages amplificateurs (DS, PS) comportant un premier étage amplificateur (DS) configuré pour recevoir en entrée un signal radiofréquence et un dernier étage amplificateur (PS) configuré pour délivrer en sortie un signal radiofréquence amplifié, • un circuit de sûreté comprenant : • des moyens de contrôle (CM) configurés pour comparer une tension du signal radiofréquence amplifié (RFAMP) à une tension seuil (VTH), • des moyens de réduction (GRM) de gain configurés pour réduire une tension de polarisation d'un étage amplificateur en amont (DS) du dernier étage (PS) lorsque la tension du signal radiofréquence amplifié (RFAMP) est supérieure à la tension seuil (VTH).

    METHOD AND TRANSMITTER CIRCUIT FOR COMMUNICATION USING ACTIVE LOAD MODULATION IN RADIO FREQUENCY IDENTIFICATION SYSTEMS
    5.
    发明申请
    METHOD AND TRANSMITTER CIRCUIT FOR COMMUNICATION USING ACTIVE LOAD MODULATION IN RADIO FREQUENCY IDENTIFICATION SYSTEMS 审中-公开
    在无线电频率识别系统中使用主动负载调制的通信方法和发射机电路

    公开(公告)号：WO2017050818A1

    公开(公告)日：2017-03-30

    申请号：PCT/EP2016/072410

    申请日：2016-09-21

    Applicant: STMICROELECTRONICS INTERNATIONAL N.V.

    Inventor： KOVACIC, Kosta ,  PEVEC, Albin

    IPC: H04B5/00

    CPC classification number: H04B5/0062 ,  H04B5/0031

    Abstract: Method and transmitter circuit for communication using active load modulation in Radio Frequency Identification systems In one embodiment a method for communication using active load modulation in Radio Frequency Identification, RFID, systems comprising the following steps of receiving a carrier signal (Sc) having a carrier frequency from a reader device, generating a modulated signal (Smod), transmitting a burst of a sending signal (Sout), and decaying the sending signal (Sout) at the end of the burst. Furthermore, atransmitter circuit (T) for communication using active load modulation in RFID systems comprising an equipment (E1, E2, E3) for generating a decaying sending signal (Sout) is specified.

    Abstract translation: 在射频识别系统中使用有源负载调制进行通信的方法和发射机电路在一个实施例中，一种在射频识别（RFID）系统中使用有源负载调制的通信方法，包括以下步骤：接收具有载波频率的载波信号 从读取器装置产生调制信号（Smod），发送发送信号（Sout）的脉冲串，并在脉冲串结束时衰减发送信号（Sout）。 此外，规定了用于在包括用于产生衰减发送信号（Sout）的设备（E1，E2，E3）的RFID系统中使用有源负载调制的通信的发送器电路（T）。

    BACKOFF TIMER FOR IN-BAND INTERRUPT ON AN I3C BUS
    7.
    发明申请
    BACKOFF TIMER FOR IN-BAND INTERRUPT ON AN I3C BUS 有权

    公开(公告)号：US20250165428A1

    公开(公告)日：2025-05-22

    申请号：US18513885

    申请日：2023-11-20

    Applicant: STMicroelectronics International N.V.

    Inventor： Eyuel Zewdu TEFERI

    IPC: G06F13/42

    Abstract: A process for a slave device on a serial data bus to make an in-band interrupt request to a master device includes checking whether a backoff time stored by a backoff timer has expired. When the backoff time has not expired, the slave device refrains from initiating the in-band interrupt request to the master device in response to a start condition on the serial bus. However, when the backoff time has expired, the slave device is permitted to initiate the in-band interrupt request to the master device in response to the start condition on the serial bus.

    METHOD OF MANUFACTURING THERMOELECTRIC GENERATORS
    8.
    发明申请
    METHOD OF MANUFACTURING THERMOELECTRIC GENERATORS 有权

    公开(公告)号：US20250160214A1

    公开(公告)日：2025-05-15

    申请号：US18943113

    申请日：2024-11-11

    Applicant: STMicroelectronics International N.V.

    Inventor： Antonio BELLIZZI ,  Fabrizio CREVENNA

    IPC: H10N10/01

    Abstract: A thermoelectric unit includes a thermoelectric membrane having a first surface at a cavity in a layer of first thermally conductive material. The thermoelectric membrane has a second surface opposite to the first surface with second thermally conductive material arranged in contact with the second surface of the thermoelectric membrane. The thermoelectric membrane includes thermally sensitive material configured to generate via the Seebeck effect a thermoelectric signal indicative of the temperature difference between the second thermally conductive material and the first thermally conductive material. An insulating molding compound is molded onto the second thermally conductive material arranged in contact with the second surface of the thermoelectric membrane wherein mechanical stress develops in the thermoelectric membrane in response to molding. An encapsulation is provided at the second surface of the thermoelectric membrane. The encapsulation counters mechanical stress developed in the thermoelectric membrane in response to the molding of insulating molding compound.

    PHOTONIC DEVICE AND METHOD
    9.
    发明申请
    PHOTONIC DEVICE AND METHOD 有权

    公开(公告)号：US20250155640A1

    公开(公告)日：2025-05-15

    申请号：US18922884

    申请日：2024-10-22

    Applicant: STMicroelectronics International N.V.

    Inventor： Sébastien Cremer ,  Frédéric Boeuf

    IPC: G02B6/13

    Abstract: A method of manufacturing a photonic device comprises, successively, forming on a first substrate at least one metallization level and a first bonding layer, forming on a second high-resistivity substrate a second bonding layer, bonding the first bonding layer to the second bonding layer, removing the first substrate; and forming a first optical component on the at least one metallization level. A sum of the thicknesses of the first and second bonding layers and of the thickness of the at least one metallization level is greater than 3 μm.

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