公开(公告)号：WO2013021344A1

公开(公告)日：2013-02-14

申请号：PCT/IB2012/054020

申请日：2012-08-07

Applicant: LUPIN LIMITED ,  RAMDAS, Vidya ,  JOSHI, Advait, Arun ,  BANERJEE, Moloy, Manoj ,  DAS, Amit, Kumar ,  WALKE, Deepak, Sahebrao ,  PALLE, Venkata, P. ,  KAMBOJ, Rajender, Kumar

Inventor： RAMDAS, Vidya ,  JOSHI, Advait, Arun ,  BANERJEE, Moloy, Manoj ,  DAS, Amit, Kumar ,  WALKE, Deepak, Sahebrao ,  PALLE, Venkata, P. ,  KAMBOJ, Rajender, Kumar

IPC: C07D403/14 ,  C07D413/14 ,  C07D491/044 ,  C07D498/04 ,  A61K31/4178 ,  A61K31/4184 ,  A61K31/422 ,  A61K31/424 ,  A61P31/00

CPC classification number: C07D403/14 ,  C07D413/14 ,  C07D491/044 ,  C07D498/04

Abstract: Compounds of the general formula (I) their tautomeric forms, their stereoisomers, their analogs, their prodrugs, their isotopes, their N-oxides, their metabolites, their pharmaceutically acceptable salts, polymorphs, solvates, optical isomers, clathrates, co-crystals, combinations with suitable medicament, pharmaceutical compositions containing them, methods of making of the above compounds, and their use as antiviral candidate, more specifically as anti-HCV are disclosed.

Abstract translation: 通式（I）化合物的互变异构形式，其立体异构体，其类似物，其前药，其同位素，其N-氧化物，其代谢物，其药学上可接受的盐，多晶型物，溶剂合物，旋光异构体，包合物，共晶体， 公开了与合适的药物的组合，含有它们的药物组合物，制备上述化合物的方法，以及它们作为抗病毒药物的用途，更具体地作为抗HCV。

公开(公告)号：WO2007047940A3

公开(公告)日：2007-07-19

申请号：PCT/US2006041066

申请日：2006-10-19

Applicant: WORLD PROPERTIES INC ,  DAIGLE ROBERT C ,  DAS AMIT ,  SANKAR PAUL K ,  BAARS DIRK M ,  HORN ALLEN F III

Inventor： DAIGLE ROBERT C ,  DAS AMIT ,  SANKAR PAUL K ,  BAARS DIRK M ,  HORN ALLEN F III

IPC: H05K3/38

CPC classification number: H05K3/38 ,  H05K3/381 ,  H05K3/386 ,  H05K3/389 ,  H05K2201/0116 ,  H05K2201/0209 ,  H05K2201/0355 ,  H05K2201/2063 ,  H05K2201/2072

Abstract: Use of a roughened dielectric layer between a dielectric substrate and a conductive layer, which allows increased adhesion between layers without the conductor loss associated with roughened conductor layers, as well as improved accuracy in etching. The method is widely applicable to a variety of dielectric substrate and conductive layer constructions, and can be readily tuned to provide the desired level of adhesion and other advantageous properties.

Abstract translation: 在电介质基板和导电层之间使用粗糙化的电介质层，其允许增加层间的粘合性，而没有与粗糙化的导体层相关的导体损耗，以及蚀刻精度的提高。 该方法广泛适用于各种电介质基底和导电层结构，并且可以容易地调整以提供期望水平的粘附性和其他有利性质。

公开(公告)号：WO2007047940A2

公开(公告)日：2007-04-26

申请号：PCT/US2006/041066

申请日：2006-10-19

Applicant: WORLD PROPERTIES, INC. ,  DAIGLE, Robert, C. ,  DAS, Amit ,  SANKAR, Paul, K. ,  BAARS, Dirk, M. ,  HORN, Allen, F., III

Inventor： DAIGLE, Robert, C. ,  DAS, Amit ,  SANKAR, Paul, K. ,  BAARS, Dirk, M. ,  HORN, Allen, F., III

CPC classification number: H05K3/38 ,  H05K3/381 ,  H05K3/386 ,  H05K3/389 ,  H05K2201/0116 ,  H05K2201/0209 ,  H05K2201/0355 ,  H05K2201/2063 ,  H05K2201/2072

Abstract: Use of a roughened dielectric layer between a dielectric substrate and a conductive layer, which allows increased adhesion between layers without the conductor loss associated with roughened conductor layers, as well as improved accuracy in etching. The method is widely applicable to a variety of dielectric substrate and conductive layer constructions, and can be readily tuned to provide the desired level of adhesion and other advantageous properties.

Abstract translation: 在电介质基板和导电层之间使用粗糙化的电介质层，其允许增加层之间的粘附，而不会导致与粗糙化的导体层相关的导体损耗，以及提高蚀刻精度。 该方法广泛适用于各种电介质基底和导电层结构，并且可以容易地调节以提供期望的粘合水平和其它有利的性质。