CORRUGATED DIELECTRIC FOR RELIABLE HIGH-CURRENT CHARGE-EMISSION DEVICES
    4.
    发明申请
    CORRUGATED DIELECTRIC FOR RELIABLE HIGH-CURRENT CHARGE-EMISSION DEVICES 审中-公开
    用于可靠的高电流充电发射装置的腐蚀电介质

    公开(公告)号:WO2012128992A1

    公开(公告)日:2012-09-27

    申请号:PCT/US2012/028851

    申请日:2012-03-13

    Abstract: Micro-fabricated charge-emission devices comprise an electrically conductive gate electrode with an aperture, an electrically conductive base electrode, a charge-emitting microstructure extending from a surface in electrical contact with the base electrode and terminating near the aperture of the gate electrode, and a dielectric layer stack disposed between the base electrode and the gate electrode. The dielectric layer stack comprises a first dielectric layer and a second dielectric layer. The first dielectric layer is disposed between the second dielectric layer and the base electrode. The first dielectric layer is of a different selectively etchable dielectric material than the second dielectric layer. The dielectric layer stack has formed therein a cavity within which the charge-emitting microstructure is disposed. The cavity has a corrugated wall shaped by the first dielectric layer undercutting the second dielectric layer. The corrugated wall surrounds the charge-emitting microstructure disposed within the cavity.

    Abstract translation: 微制造的电荷发射装置包括具有孔的导电栅极电极,导电基极电极,从与基极电接触并在栅电极的孔附近终止的表面延伸的电荷发射微结构,以及 设置在基极和栅电极之间的电介质层叠层。 电介质层堆叠包括第一电介质层和第二电介质层。 第一电介质层设置在第二电介质层和基极之间。 第一电介质层是与第二介电层不同的可选择蚀刻的电介质材料。 电介质层叠层中形成有电荷发射微结构设置在其中的空腔。 空腔具有由第一介电层成形的波纹状壁,底层切割第二介电层。 波纹壁围绕设置在空腔内的电荷发射微结构。

Patent Agency Ranking