Abstract:
According to the invention, the cover (13) of the inventive sensor is made of a first layer (32) (deposition layer) which is transparent to an etching to reaction products and has a hermetically sealed second layer (34) (sealing layer) located thereover. In the method according to the invention, at least the sensor chamber (28) is located in the base wafer (11) is filled with an oxide (30), in particular CVD oxide or porous oxide after a structure (26) has been established. The sensor chamber (28)is covered with a first layer (32) in particular a polysilicon layer which is or has been made transparent to the etching medium and the reaction products (deposition layer). The oxide (30) in the sensor chamber (28) is removed by an etching medium which etches through the deposition layer (32). A second layer (34) (sealing layer) is subsequently applied to the deposition layer (32) which hermetically seals the sensor chamber (28). Said second layer is in particular made of a metal or an insulator.
Abstract:
A process is disclosed for producing a speed of rotation Coriolis sensor with oscillating supporting masses elastically suspended from a substrate, driving means for imparting a planar oscillation to the supporting masses and evaluation means for sensing a Coriolis acceleration. The oscillating supporting masses (12, 14), as well as the driving means (20) and integrated stops (36, 38), are produced in a single plasma etching operation from a silicon-on-insulator (SOI) wafer.
Abstract:
In a process for producing surface micromechanical structures, a sacrificial layer, especially of silicon oxide, is deposited and structured on a silicon substrate as a silicon wafer. A second layer, especially of polysilicon, is separated and likewise structured on the sacrificial layer. The sacrificial layer is removed by an etching process using an etching agent wich attacks the sacrificial layer but not the second layer, providing structures which project freely above the thickness of the removed sacrificial layer and are anchored to the silicon substrate at certain points. According to the invention, the micromechanical structures are exposed to the vapour phase of a mixture of anhydrous hydrofluoric acid and water in a vapour phase etching process for etching and revelation. It is thus possible to do away with cumbersome rinsing and sublimation processes.
Abstract:
The invention concerns a method of producing acceleration sensors using a silicon layer which is deposited in an epitaxial system. The material grows in the form of a polysilicon layer (6) with a given degree of surface roughness above sacrificial layers (2) applied to the carrier (1). The surface roughness is eliminated by applying a photosensitive resist and a post-etching process. Alternatively, chemical-mechanical smoothing can be performed.
Abstract:
The proposal is for an acceleration sensor consisting of an upper plate (1), a central plate (2) and a lower plate (3). The sensor has a movable electrode (4) built out from the central plate (2). The assembly of the plates is simplified by the use of a closed dielectric layer (10) on the upper plate (1) and the lower plate (3) since the plates do not have to be mutually adjusted. The use of stops (17) prevents the jamming of the seismic mass (33) on the upper (1) or lower plate (3). The use of local oxidation (18) reduces the stray capacitance.
Abstract:
A process is disclosed for producing a speed of rotation Coriolis sensor with oscillating supporting masses elastically suspended from a substrate, driving means for imparting a planar oscillation to the supporting masses and evaluation means for sensing a Coriolis acceleration. The oscillating supporting masses (12, 14), as well as the driving means (20) and integrated stops (36, 38), are produced in a single plasma etching operation from a silicon-on-insulator (SOI) wafer.
Abstract:
The invention concerns an accelerometer, in particular a Coriolis rate-of-rotation sensor, with a mass suspended by springs from a support so that it is displaced under the action of an acceleration, plus processing circuits for determining the displacement of the mass caused by the acceleration, in particular a Coriolis acceleration. The invention calls for the mass (12, 14) to be suspended in such a way that displacement of the mass (12, 14) by interfering accelerations, in particular linear accelerations, acting on the mass is suppressed.