SENSOR WITH AT LEAST ONE MICROMECHANICAL STRUCTURE AND METHOD FOR THE PRODUCTION THEREOF
    1.
    发明申请
    SENSOR WITH AT LEAST ONE MICROMECHANICAL STRUCTURE AND METHOD FOR THE PRODUCTION THEREOF 审中-公开
    根据上述制造至少一个微机械结构与过程传感器

    公开(公告)号:WO0146066A3

    公开(公告)日:2002-04-04

    申请号:PCT/DE0004454

    申请日:2000-12-14

    Abstract: According to the invention, the cover (13) of the inventive sensor is made of a first layer (32) (deposition layer) which is transparent to an etching to reaction products and has a hermetically sealed second layer (34) (sealing layer) located thereover. In the method according to the invention, at least the sensor chamber (28) is located in the base wafer (11) is filled with an oxide (30), in particular CVD oxide or porous oxide after a structure (26) has been established. The sensor chamber (28)is covered with a first layer (32) in particular a polysilicon layer which is or has been made transparent to the etching medium and the reaction products (deposition layer). The oxide (30) in the sensor chamber (28) is removed by an etching medium which etches through the deposition layer (32). A second layer (34) (sealing layer) is subsequently applied to the deposition layer (32) which hermetically seals the sensor chamber (28). Said second layer is in particular made of a metal or an insulator.

    Abstract translation: 据设想,在本发明的传感器,由透明的盖(13)的蚀刻介质和反应产物中的第一层(32)(分离层)和上覆的气密地密封的第二层(34)(密封层),并且本发明的方法 至少在基底晶片(11)建立结构之后(26),现有的传感器腔室(28)填充有具有氧化物(30),特别是CVD氧化物或多孔氧化物,所述传感器室(28),一个用于蚀刻介质和反应产物 透明或随后作出透明的第一层(32)(分离层),特别是多晶硅,被覆盖,这是在所述传感器室(28)通过所述分离层(32)的氧化物(30)通过蚀刻介质和随后的第二层(去世 由金属或绝缘体(在沉积层32上)的34)(密封层),特别是施加到浅草 rraum(28)气密地密封。

    PROCESS FOR PRODUCING A SPEED OF ROTATION CORIOLIS SENSOR
    2.
    发明申请
    PROCESS FOR PRODUCING A SPEED OF ROTATION CORIOLIS SENSOR 审中-公开
    用于生产旋转传感器的科里奥利率

    公开(公告)号:WO1997015066A2

    公开(公告)日:1997-04-24

    申请号:PCT/DE1996001969

    申请日:1996-10-17

    Abstract: A process is disclosed for producing a speed of rotation Coriolis sensor with oscillating supporting masses elastically suspended from a substrate, driving means for imparting a planar oscillation to the supporting masses and evaluation means for sensing a Coriolis acceleration. The oscillating supporting masses (12, 14), as well as the driving means (20) and integrated stops (36, 38), are produced in a single plasma etching operation from a silicon-on-insulator (SOI) wafer.

    Abstract translation: 本发明涉及一种用于制造科里奥利旋转速率传感器的方法,NIT弹性悬挂基板,所述振荡质量块上,并且载体驱动装置,用于载体组合物的令人兴奋的平面振荡和评价装置,用于检测科里奥利加速度。 它提供的是,摆动载波块(12,14)和所述驱动装置(20)和积分停止(36,38)在一个共同的操作由一个硅 - Insulater(SOI)晶片的等离子蚀刻来图案化。

    PROCESS FOR PRODUCING SURFACE MICROMECHANICAL STRUCTURES
    3.
    发明申请
    PROCESS FOR PRODUCING SURFACE MICROMECHANICAL STRUCTURES 审中-公开
    过程:用于产生表面微机械结构

    公开(公告)号:WO1994028426A1

    公开(公告)日:1994-12-08

    申请号:PCT/DE1994000538

    申请日:1994-05-11

    CPC classification number: B81C1/0092 B81C1/00936 B81C2201/0132 G01P15/0802

    Abstract: In a process for producing surface micromechanical structures, a sacrificial layer, especially of silicon oxide, is deposited and structured on a silicon substrate as a silicon wafer. A second layer, especially of polysilicon, is separated and likewise structured on the sacrificial layer. The sacrificial layer is removed by an etching process using an etching agent wich attacks the sacrificial layer but not the second layer, providing structures which project freely above the thickness of the removed sacrificial layer and are anchored to the silicon substrate at certain points. According to the invention, the micromechanical structures are exposed to the vapour phase of a mixture of anhydrous hydrofluoric acid and water in a vapour phase etching process for etching and revelation. It is thus possible to do away with cumbersome rinsing and sublimation processes.

    Abstract translation: 在用于制造硅衬底作为一个硅晶片,牺牲层,尤其是氧化硅的上表面mikromeschanischer结构,沉积和图案化的方法。 在牺牲层,第二层,特别是多晶硅,沉积和结构化也。 所述牺牲层与蚀刻介质,其攻击牺牲层而不是第二层,由此创建结构,这是自由地在该硅衬底被除去的牺牲层的厚度的距离,并在所述硅衬底上的某些位点锚定蚀刻操作除去 , 根据本发明,所述微机械结构的气相在气相蚀刻anhydrider氢氟酸和水的混合物来进行蚀刻和曝光。 这可以用复杂的清洗和升华分配。

    METHOD OF PRODUCING ACCELERATION SENSORS
    4.
    发明申请
    METHOD OF PRODUCING ACCELERATION SENSORS 审中-公开
    用于生产加速度传感器

    公开(公告)号:WO1997004319A1

    公开(公告)日:1997-02-06

    申请号:PCT/DE1996001236

    申请日:1996-07-09

    CPC classification number: G01P15/0802

    Abstract: The invention concerns a method of producing acceleration sensors using a silicon layer which is deposited in an epitaxial system. The material grows in the form of a polysilicon layer (6) with a given degree of surface roughness above sacrificial layers (2) applied to the carrier (1). The surface roughness is eliminated by applying a photosensitive resist and a post-etching process. Alternatively, chemical-mechanical smoothing can be performed.

    Abstract translation: 它提出了一种用于加速度传感器的制备中所使用的硅层,其上沉积在外延的方法。 上述在载体上(1)被施加牺牲层(2),该材料生长的多晶硅层(6),其具有一定的表面粗糙度上。 该表面粗糙度是通过施加光致抗蚀剂和Nachätzprozess除去。 可替换地,提供了一种化学机械平滑。

    ACCELERATION SENSOR
    5.
    发明申请
    ACCELERATION SENSOR 审中-公开
    加速度传感器

    公开(公告)号:WO1994001782A1

    公开(公告)日:1994-01-20

    申请号:PCT/DE1993000570

    申请日:1993-06-30

    CPC classification number: G01P15/125 G01P15/0802 G01P2015/0828

    Abstract: The proposal is for an acceleration sensor consisting of an upper plate (1), a central plate (2) and a lower plate (3). The sensor has a movable electrode (4) built out from the central plate (2). The assembly of the plates is simplified by the use of a closed dielectric layer (10) on the upper plate (1) and the lower plate (3) since the plates do not have to be mutually adjusted. The use of stops (17) prevents the jamming of the seismic mass (33) on the upper (1) or lower plate (3). The use of local oxidation (18) reduces the stray capacitance.

    Abstract translation: 本发明提供了一种由上板(1),中板(2)和下板(3)组成的加速度传感器。 它有一个可动电极(4)连接到中心板(2)的结构上。 在上板(1)和下板(3)上使用封闭的介电层(10)简化了板的组装,板不再需要装配在一起。 通过使用支座(17),避免了振动质量块(33)与上(1)或下(3)板的结合。 通过使用局部氧化作用可以降低分散性(18)。

    ACCELEROMETER
    7.
    发明申请
    ACCELEROMETER 审中-公开
    加速度传感器

    公开(公告)号:WO1995034798A1

    公开(公告)日:1995-12-21

    申请号:PCT/DE1995000723

    申请日:1995-06-02

    CPC classification number: G01C19/574 B60G2400/206 B60G2400/60 B60G2400/91

    Abstract: The invention concerns an accelerometer, in particular a Coriolis rate-of-rotation sensor, with a mass suspended by springs from a support so that it is displaced under the action of an acceleration, plus processing circuits for determining the displacement of the mass caused by the acceleration, in particular a Coriolis acceleration. The invention calls for the mass (12, 14) to be suspended in such a way that displacement of the mass (12, 14) by interfering accelerations, in particular linear accelerations, acting on the mass is suppressed.

    Abstract translation: 本发明涉及一种加速度传感器,尤其科里奥利旋转速率传感器,悬浮着的弹簧安装在基板上(基极),由于加速度作用偏转地震震动质量,以及评估装置,用于检测所述振动质量的加速度引起的偏转,尤其是用于检测科里奥利加速度。 可以预期的是地震块(12,14)被暂停,使得振动质量(12,14)由于,可以在这个作用的加速度干扰被抑制,特别是线性加速度的偏转。

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