HYDRAULIC-FACILITATED CONTACT LITHOGRAPHY APPARATUS, SYSTEM AND METHOD
    1.
    发明申请
    HYDRAULIC-FACILITATED CONTACT LITHOGRAPHY APPARATUS, SYSTEM AND METHOD 审中-公开
    液压促进接触光刻设备,系统和方法

    公开(公告)号:WO2008045504A3

    公开(公告)日:2008-05-29

    申请号:PCT/US2007021722

    申请日:2007-10-10

    CPC classification number: G03F7/2014 B82Y10/00 B82Y40/00 G03F7/0002

    Abstract: A contact lithography apparatus 100, 220, a system 200 and a method 300 use a hydraulic deformation to facilitate pattern transfer. The apparatus, the system and the method include a spacer 120, 226 that provides a spaced apart proximal orientation of lithographic elements 110, 228a, 130, 228b, and a hydraulic force member 140, 240 that provides the hydraulic deformation. One or more of the lithographic elements and the spacer is deformable, such that hydraulic deformation thereof facilitates the pattern transfer.

    Abstract translation: 接触光刻设备100,220,系统200和方法300使用液压变形来促进图案转印。 该设备,系统和方法包括提供平版印刷元件110,228a,130,228b的间隔开的近侧定向的间隔件120,226和提供液压变形的液压力构件140,240。 一个或多个平版印刷元件和间隔件是可变形的,使得其液压变形有利于图案转印。

    METHODS AND SYSTEMS FOR PERFORMING LITHOGRAPHY, METHODS FOR ALIGNING OBJECTS RELATIVE TO ONE ANOTHER, AND NANOIMPRINTING MOLDS HAVING NON-MARKING ALIGNMENT FEATURES
    2.
    发明申请
    METHODS AND SYSTEMS FOR PERFORMING LITHOGRAPHY, METHODS FOR ALIGNING OBJECTS RELATIVE TO ONE ANOTHER, AND NANOIMPRINTING MOLDS HAVING NON-MARKING ALIGNMENT FEATURES 审中-公开
    用于执行算术的方法和系统,与其他方法对准对象的方法,以及具有非标记对齐特征的纳米粒子

    公开(公告)号:WO2008016651A2

    公开(公告)日:2008-02-07

    申请号:PCT/US2007/017195

    申请日:2007-07-30

    CPC classification number: G03F9/7092 G03F9/7038 G03F9/7042 G03F9/7088

    Abstract: Methods of performing lithography include calculating a displacement vector (74) for a lithography tool (50) using an image (60) of a portion of the lithography tool (50) and a portion of a substrate (10) and an additional image (28) of a portion of an additional lithography tool (30) and a portion of the substrate (10). Methods of aligning objects include positioning a second object (30) proximate a first object (10) and acquiring a first image (38) illustrating a feature (32) on a surface of the second object (30) and a feature (18) on a surface of the first object (10). As additional object (50) is positioned proximate the first object (10), and an additional image (60) is acquired that illustrates a feature (52) on a surface of the additional object (50) and the feature (18) on the surface of the first object (10). The additional image (60) is compared with the first image (38). Imprint molds (30, 50) include at least one non-marking reference feature (32, 52) on animprinting surface of the imprint molds (30, 50).

    Abstract translation: 执行光刻的方法包括使用光刻工具(50)的一部分的图像(60)和基底(10)的一部分和附加图像(28)来计算光刻工具(50)的位移矢量(74) )附加光刻工具(30)的一部分和基底(10)的一部分。 对准对象的方法包括定位邻近第一物体(10)的第二物体(30)并且获取第二图像(38),该第一图像(38)示出在第二物体(30)的表面上的特征(32) 第一物体(10)的表面。 随着附加物体(50)被定位在第一物体(10)附近,并且获取附加图像(60),其示出了附加物体(50)的表面上的特征(52)和 第一物体(10)的表面。 将附加图像(60)与第一图像(38)进行比较。 压印模具(30,50)包括在压印模具(30,50)的印模表面上的至少一个非标记参考特征(32,52)。

    IMPRINT LITHOGRAPHY APPARATUS AND METHOD EMPLOYING AN EFFECTIVE PRESSURE
    5.
    发明申请
    IMPRINT LITHOGRAPHY APPARATUS AND METHOD EMPLOYING AN EFFECTIVE PRESSURE 审中-公开
    印刷机的设备和使用有效压力的方法

    公开(公告)号:WO2006036433A3

    公开(公告)日:2006-08-10

    申请号:PCT/US2005030880

    申请日:2005-08-30

    CPC classification number: B82Y10/00 B82Y40/00 G03F7/0002

    Abstract: An imprint apparatus (100, 100', 200, 220) and method 300 employ an effective pressure P eff in imprint lithography. The imprint apparatus (100, 100', 200, 220) includes a compressible chamber (111) that encloses an imprint mold (120, 228a) having a mold pattern (122) and a sample (130, 228b) to be imprinted (300). The chamber (111) is compressed (330, 340, 350) to imprint (360) the mold pattern (122) on the sample (130, 228b). The mold (120, 228a) is pressed (350) against the sample (130, 228b) with the effective pressure P eff . The effective pressure P eff is controlled by a selected ratio A cavity /A contact of a cavity area A cavity of the chamber (111) to a contact area A contact between the mold (120, 228a) and the sample (130, 228b).

    Abstract translation: 压印装置(100,100',200,220)和方法300在压印光刻中采用有效压力P eff。 压印装置(100,100',200,220)包括可压缩室(111),其包围具有模具图案(122)和要印刷的样品(130,228b)的压印模具(120,228a)(300 )。 腔室(111)被压缩(330,340,350)以在样品(130,228b)上印模(360)模具图案(122)。 模具(120,228a)以有效压力P eff被压制(350)抵靠样品(130,228b)。 有效压力P eff通过空腔区域A腔的选定比例A / A 来控制, (111)的位置与模具(120,228a)和样品(130,228b)之间的接触区域A 接触。

    MULTIPLE LAYER ALIGNMENT SENSING
    6.
    发明申请
    MULTIPLE LAYER ALIGNMENT SENSING 审中-公开
    多层排列感应

    公开(公告)号:WO2006058192A3

    公开(公告)日:2006-08-03

    申请号:PCT/US2005042694

    申请日:2005-11-23

    CPC classification number: G03F9/7003 G03F9/7038 G03F9/7088

    Abstract: Using an imaging system (104) in relation to a plurality of material layers (114, 116) is described, the material layers being separated by a distance greater than a depth of field of the imaging system. A focal plane (106) of the imaging system and a first (114) of the plurality of material layers are brought into correspondence. A first image including at least a portion of the first material layer (114) having a first feature of interest thereon (116) is stored. The focal plane (106) of the imaging system and a second (118) of the plurality of material layers are brought into correspondence. A second image including at least a portion of the second material layer (118) having a second feature of interest thereon (120) is acquired. The first and second images are processed for automatic computation of an alignment measurement between the first and second features of interest.

    Abstract translation: 描述了关于多个材料层(114,116)使用成像系统(104),材料层以大于成像系统的景深的距离分开。 使成像系统的焦平面(106)和多个材料层中的第一个(114)对应。 存储包括其上具有第一感兴趣特征(116)的第一材料层(114)的至少一部分的第一图像。 成像系统的焦平面(106)和多个材料层中的第二个(118)对应。 获取包括其上具有第二感兴趣特征(120)的第二材料层(118)的至少一部分的第二图像。 处理第一和第二图像以自动计算第一和第二感兴趣特征之间的对准测量值。

    DISPLACEMENT ESTIMATION SYSTEM AND METHOD
    7.
    发明申请
    DISPLACEMENT ESTIMATION SYSTEM AND METHOD 审中-公开
    位移估计系统和方法

    公开(公告)号:WO2006026192A1

    公开(公告)日:2006-03-09

    申请号:PCT/US2005/029555

    申请日:2005-08-19

    CPC classification number: G06T7/20 G06T7/70

    Abstract: A system (100 / 700 / 900) comprising a data acquisition system (106) and a processing system (108) is provided. The data acquisition system is configured to capture an image (112) that includes a first instance of a pattern (104A) and a second instance of the pattern (104B) from at least a first substrate (102), and the processing system is configured to calculate a displacement between the first instance and the second instance using the image.

    Abstract translation: 提供一种包括数据采集系统(106)和处理系统(108)的系统(100/700/900)。 数据采集​​系统被配置为从至少第一基板(102)捕获包括图案(104A)的第一实例和图案(104B)的第二实例的图像(112),并且处理系统被配置 以使用图像来计算第一实例和第二实例之间的位移。

    LITHOGRAPHY ALIGNMENT SYSTEM AND METHOD USING FEEDBACK CONTROL BASED ON NANOSCALE DISPLACEMNT SENSING AND ESTIMATION
    8.
    发明申请
    LITHOGRAPHY ALIGNMENT SYSTEM AND METHOD USING FEEDBACK CONTROL BASED ON NANOSCALE DISPLACEMNT SENSING AND ESTIMATION 审中-公开
    使用基于纳米尺度位移感测和估计的反馈控制的平移对准系统和方法

    公开(公告)号:WO2008048595A3

    公开(公告)日:2008-06-19

    申请号:PCT/US2007022067

    申请日:2007-10-16

    CPC classification number: G03F9/7038 G03F9/7088 G03F9/7092 G03F9/7096

    Abstract: A contact lithography alignment system (500) and methods (100, 200, 400) use nanoscale displacement sensing and estimation (nDSE) 300, 300' to maintain an alignment and compensate for a disturbance of one or more objects (510) during contact lithography. A method (100) of maintaining an alignment includes establishing (110) an initial alignment of one or more objects and employing (120, 200) nDSE-based feedback control of relative positions of one or more of the objects to maintain the alignment during contact lithography. A method (400) of disturbance compensation includes acquiring (410) a first image, acquiring (210, 420) a second image, estimating (220, 430) an alignment error using (120, 200) nDSE applied to the first and second images, and adjusting (230, 440) a relative position to reduce the alignment error. The contact lithography system (500) includes an optical sensor (520), a feedback processor (530, 600) providing nDSE and a position controller (540) that adjusts relative positions of one or more objects to reduce an alignment error determined using the nDSE.

    Abstract translation: 接触光刻对准系统(500)和方法(100,200,400)使用纳米尺度位移感测和估计(nDSE)300,300'来保持对准并补偿接触光刻期间的一个或多个物体(510)的干扰 。 保持对准的方法(100)包括建立(110)一个或多个对象的初始对准,并采用(120,200)基于nDSE的反馈控制,以反映一个或多个对象的相对位置以保持接触期间的对准 光刻。 干扰补偿的方法(400)包括获取(410)第一图像,获取(210,420)第二图像,使用施加到第一和第二图像的(120,200)nDSE来估计(220,430)对准误差 ,并调整(230,440)相对位置以减小对准误差。 接触光刻系统(500)包括光学传感器(520),提供nDSE的反馈处理器(530,600)和调整一个或多个物体的相对位置以减少使用nDSE确定的对准误差的位置控制器(540) 。

    APPARATUS AND METHOD FOR ALIGNMENT USING MULTIPLE WAVELENGTHS OF LIGHT
    9.
    发明申请
    APPARATUS AND METHOD FOR ALIGNMENT USING MULTIPLE WAVELENGTHS OF LIGHT 审中-公开
    使用光的多个波长对准的装置和方法

    公开(公告)号:WO2008013886A2

    公开(公告)日:2008-01-31

    申请号:PCT/US2007/016793

    申请日:2007-07-25

    CPC classification number: G03F9/7069 G03F9/7065 G03F9/7088

    Abstract: A method and system are disclosed for aligning a lithography template (120) having a pattern with a sunstrate (130) in preparation for transferring the pattern to a surface of the substrate (130). The system includes an optical imaging system (100) adapted to image a first alignbment structure formed on a top surface of the template (120) using light of a first wavelength and a second alignment structure formed on a top surface of the substrate (130) using light of a second wavelength.

    Abstract translation: 公开了一种方法和系统,用于对准具有图案的图案的光刻模板(120)以准备将图案转移到衬底(130)的表面。 该系统包括光学成像系统(100),其适于使用形成在基板(130)的顶表面上的第一波长的光和第二对准结构对形成在模板(120)的顶表面上的第一对准结构进行成像, 使用第二波长的光。

    MULTIPLE LAYER ALIGNMENT SENSING
    10.
    发明申请
    MULTIPLE LAYER ALIGNMENT SENSING 审中-公开
    多层对准感应

    公开(公告)号:WO2006058192A2

    公开(公告)日:2006-06-01

    申请号:PCT/US2005/042694

    申请日:2005-11-23

    CPC classification number: G03F9/7003 G03F9/7038 G03F9/7088

    Abstract: Using an imaging system (104) in relation to a plurality of material layers (114, 116) is described, the material layers being separated by a distance greater than a depth of field of the imaging system. A focal plane (106) of the imaging system and a first (114) of the plurality of material layers are brought into correspondence. A first image including at least a portion of the first material layer (114) having a first feature of interest thereon (116) is stored. The focal plane (106) of the imaging system and a second (118) of the plurality of material layers are brought into correspondence. A second image including at least a portion of the second material layer (118) having a second feature of interest thereon (120) is acquired. The first and second images are processed for automatic computation of an alignment measurement between the first and second features of interest.

    Abstract translation: 描述了相对于多个材料层(114,116)使用成像系统(104),材料层被分离大于成像系统的景深的距离。 使成像系统的焦平面(106)和多个材料层中的第一(114)对应。 存储包括其上具有感兴趣的第一特征的第一材料层(114)的至少一部分的第一图像(116)。 使成像系统的焦平面(106)和多个材料层中的第二(118)对应。 获取包括其上具有感兴趣的第二特征的第二材料层(118)的至少一部分的第二图像(120)。 处理第一和第二图像以自动计算感兴趣的第一和第二特征之间的对准测量。

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