Abstract:
A contact lithography apparatus 100, 220, a system 200 and a method 300 use a hydraulic deformation to facilitate pattern transfer. The apparatus, the system and the method include a spacer 120, 226 that provides a spaced apart proximal orientation of lithographic elements 110, 228a, 130, 228b, and a hydraulic force member 140, 240 that provides the hydraulic deformation. One or more of the lithographic elements and the spacer is deformable, such that hydraulic deformation thereof facilitates the pattern transfer.
Abstract:
Methods of performing lithography include calculating a displacement vector (74) for a lithography tool (50) using an image (60) of a portion of the lithography tool (50) and a portion of a substrate (10) and an additional image (28) of a portion of an additional lithography tool (30) and a portion of the substrate (10). Methods of aligning objects include positioning a second object (30) proximate a first object (10) and acquiring a first image (38) illustrating a feature (32) on a surface of the second object (30) and a feature (18) on a surface of the first object (10). As additional object (50) is positioned proximate the first object (10), and an additional image (60) is acquired that illustrates a feature (52) on a surface of the additional object (50) and the feature (18) on the surface of the first object (10). The additional image (60) is compared with the first image (38). Imprint molds (30, 50) include at least one non-marking reference feature (32, 52) on animprinting surface of the imprint molds (30, 50).
Abstract:
An electronic apparatus includes a first die, a second die, a third die, and a fourth die (101-104), wherein a portion of the second die (50) and a portion of the third die (150) are movably connected between the first die and the fourth die (101, 104).
Abstract:
An electronic apparatus includes a first die, a second die, a third die, and a fourth die (101-104), wherein a portion of the second die (50) and a portion of the third die (150) are movably connected between the first die and the fourth die (101, 104).
Abstract:
An imprint apparatus (100, 100', 200, 220) and method 300 employ an effective pressure P eff in imprint lithography. The imprint apparatus (100, 100', 200, 220) includes a compressible chamber (111) that encloses an imprint mold (120, 228a) having a mold pattern (122) and a sample (130, 228b) to be imprinted (300). The chamber (111) is compressed (330, 340, 350) to imprint (360) the mold pattern (122) on the sample (130, 228b). The mold (120, 228a) is pressed (350) against the sample (130, 228b) with the effective pressure P eff . The effective pressure P eff is controlled by a selected ratio A cavity /A contact of a cavity area A cavity of the chamber (111) to a contact area A contact between the mold (120, 228a) and the sample (130, 228b).
Abstract:
Using an imaging system (104) in relation to a plurality of material layers (114, 116) is described, the material layers being separated by a distance greater than a depth of field of the imaging system. A focal plane (106) of the imaging system and a first (114) of the plurality of material layers are brought into correspondence. A first image including at least a portion of the first material layer (114) having a first feature of interest thereon (116) is stored. The focal plane (106) of the imaging system and a second (118) of the plurality of material layers are brought into correspondence. A second image including at least a portion of the second material layer (118) having a second feature of interest thereon (120) is acquired. The first and second images are processed for automatic computation of an alignment measurement between the first and second features of interest.
Abstract:
A system (100 / 700 / 900) comprising a data acquisition system (106) and a processing system (108) is provided. The data acquisition system is configured to capture an image (112) that includes a first instance of a pattern (104A) and a second instance of the pattern (104B) from at least a first substrate (102), and the processing system is configured to calculate a displacement between the first instance and the second instance using the image.
Abstract:
A contact lithography alignment system (500) and methods (100, 200, 400) use nanoscale displacement sensing and estimation (nDSE) 300, 300' to maintain an alignment and compensate for a disturbance of one or more objects (510) during contact lithography. A method (100) of maintaining an alignment includes establishing (110) an initial alignment of one or more objects and employing (120, 200) nDSE-based feedback control of relative positions of one or more of the objects to maintain the alignment during contact lithography. A method (400) of disturbance compensation includes acquiring (410) a first image, acquiring (210, 420) a second image, estimating (220, 430) an alignment error using (120, 200) nDSE applied to the first and second images, and adjusting (230, 440) a relative position to reduce the alignment error. The contact lithography system (500) includes an optical sensor (520), a feedback processor (530, 600) providing nDSE and a position controller (540) that adjusts relative positions of one or more objects to reduce an alignment error determined using the nDSE.
Abstract:
A method and system are disclosed for aligning a lithography template (120) having a pattern with a sunstrate (130) in preparation for transferring the pattern to a surface of the substrate (130). The system includes an optical imaging system (100) adapted to image a first alignbment structure formed on a top surface of the template (120) using light of a first wavelength and a second alignment structure formed on a top surface of the substrate (130) using light of a second wavelength.
Abstract:
Using an imaging system (104) in relation to a plurality of material layers (114, 116) is described, the material layers being separated by a distance greater than a depth of field of the imaging system. A focal plane (106) of the imaging system and a first (114) of the plurality of material layers are brought into correspondence. A first image including at least a portion of the first material layer (114) having a first feature of interest thereon (116) is stored. The focal plane (106) of the imaging system and a second (118) of the plurality of material layers are brought into correspondence. A second image including at least a portion of the second material layer (118) having a second feature of interest thereon (120) is acquired. The first and second images are processed for automatic computation of an alignment measurement between the first and second features of interest.