ADVANCED LIGHT EXTRACTION STRUCTURE
    6.
    发明申请
    ADVANCED LIGHT EXTRACTION STRUCTURE 审中-公开
    先进的光提取结构

    公开(公告)号:WO2015006276A1

    公开(公告)日:2015-01-15

    申请号:PCT/US2014/045671

    申请日:2014-07-08

    CPC classification number: H01L51/5275 H01L27/3211 H01L27/3244

    Abstract: This presently disclosed technology relates to Organic Light Emitting Diodes (OLEDs), more particularly it relates to OLED display extraction and nanocomposite formulations that can be used for the light extraction structure. The OLEDs comprise, in order, an encapsulation layer or a substrate layer, an array of lenses, and an array of light emitting pixels at least partially covered by said array of lenses, wherein at least one of the lenses covers at least one of the pixel, and said lenses comprises a material with higher refractive index than the encapsulation layer or substrate layer.

    Abstract translation: 本公开的技术涉及有机发光二极管(OLED),更具体地说,涉及可用于光提取结构的OLED显示提取和纳米复合材料制剂。 OLED依次包括封装层或衬底层,透镜阵列和至少部分被所述透镜阵列所覆盖的发光像素阵列,其中透镜中的至少一个覆盖至少一个透镜 像素,并且所述透镜包括具有比封装层或衬底层更高的折射率的材料。

    APPLICATIONS OF SEMICONDUCTOR NANO-SIZED PARTICLES FOR PHOTOLITHOGRAPHY
    7.
    发明申请
    APPLICATIONS OF SEMICONDUCTOR NANO-SIZED PARTICLES FOR PHOTOLITHOGRAPHY 审中-公开
    半导体纳米尺寸颗粒的应用于光刻机

    公开(公告)号:WO2005029180A2

    公开(公告)日:2005-03-31

    申请号:PCT/US2004/006443

    申请日:2004-03-04

    IPC: G03F

    Abstract: Semiconductor nano-sized particles possess unique optical properties, which make them ideal candidates for various applications in the UV photolithography. In this patent several such applications, including using semiconductor nano-sized particles or semiconductor nano-sized particle containing mateirals as highly refractive medium in immersion lithography, as anti-reflection coating in optics, as pellicle in lithography and as sensitizer in UV photoresists are described.

    Abstract translation: 半导体纳米尺寸颗粒具有独特的光学性质,使其成为UV光刻技术中各种应用的理想选择。 在该专利中,描述了包括使用半导体纳米尺寸颗粒或半导体纳米尺寸颗粒在浸没式光刻中作为高折射介质的半导体纳米尺寸颗粒,作为光学中的抗反射涂层,光刻中的防护薄膜和UV光致抗蚀剂中的敏化剂 。

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