公开(公告)号：KR101450518B1

公开(公告)日：2014-10-14

申请号：KR1020130119823

申请日：2013-10-08

Applicant: (재)한국나노기술원

Inventor： 정상현 ,  김창환 ,  황선용 ,  김서현 ,  이동근 ,  신현범 ,  강호관 ,  이재진

IPC: H01J37/317 ,  H01J37/147

Abstract: The present invention relates to an electron beam lithography apparatus adjusting an electron beam focus in accordance to the type of substrate, and to a method to adjust focus of the same. According to the present invention, the method to adjust a focus of the electron beam lithography apparatus comprises the steps of: measuring the height of a substrate; regarding a height map showing measurement error of the measured height to adjust the measured height; and adjusting a focus of an electron beam irradiated in accordance to the adjusted height.

Abstract translation: 本发明涉及一种根据衬底的类型调整电子束聚焦的电子束光刻设备及其调整焦点的方法。 根据本发明，调整电子束光刻设备的焦点的方法包括以下步骤：测量衬底的高度; 关于高度图显示测量高度的测量误差，以调整测量的高度; 以及调整根据调节高度照射的电子束的焦点。