公开(公告)号：KR101161731B1

公开(公告)日：2012-07-09

申请号：KR1020110063829

申请日：2011-06-29

Applicant: (주)큐엠씨

Inventor： 김승규 ,  유병소 ,  장현삼 ,  노민수

IPC: B23K26/364 ,  B23K26/16 ,  H01L21/301 ,  H01L21/78

Abstract: PURPOSE: A laser processing apparatus and method are provided to prevent a laser beam from being scattered or irregularly reflected on a reflective layer and transferred into a wafer layer by removing the reflective layer before laser processing. CONSTITUTION: A laser processing apparatus comprises a stage(30) and first and second processing units(40,50). The first processing unit is arranged on the upper side of the stage and provides a laser beam to a wafer(10) placed on the stage. The second processing unit is installed on one side of the first processing unit and transmits ultrasonic vibration along a predetermined cutting line to remove a reflective layer from the wafer, thereby preventing the scattering and irregular reflection of a laser beam on the reflective layer. After the reflective laser is removed by the second processing unit, the first processing unit provides a laser beam along the predetermined cutting line in a specified region of the wafer and forms spots of laser beam inside the wafer to form a phase change area.

Abstract translation: 目的：提供一种激光加工装置和方法，以防止激光束在反射层之间被散射或不规则地反射并通过在激光加工之前去除反射层而转移到晶片层中。 构成：激光加工装置包括台（30）和第一和第二处理单元（40,50）。 第一处理单元布置在台的上侧，并且将激光束提供到放置在台上的晶片（10）。 第二处理单元安装在第一处理单元的一侧，并沿着预定的切割线发送超声波振动，以从晶片去除反射层，从而防止激光束在反射层上的散射和不规则反射。 在通过第二处理单元去除反射激光器之后，第一处理单元沿着晶片的指定区域中的预定切割线提供激光束，并且在晶片内形成激光束的点以形成相变区域。