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公开(公告)号：CN102615446B
公开(公告)日：2014-09-03
申请号：CN201110460651.5
申请日：2011-12-31
Applicant: 富士通株式会社
IPC: B23K35/26 , H05K3/34 , H01L23/488
CPC classification number: H05K3/3463 , B23K35/0244 , B23K35/262 , B23K35/264 , B23K2101/36 , B23K2101/40 , C22C12/00 , C22C13/00 , C22C30/04 , C22C30/06 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2224/13099 , H01L2224/13111 , H01L2224/13113 , H01L2224/16225 , H01L2224/16227 , H01L2224/16506 , H01L2224/81065 , H01L2224/81097 , H01L2224/81192 , H01L2224/81211 , H01L2224/81805 , H01L2224/81815 , H01L2924/00013 , H01L2924/01006 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/01051 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/15311 , Y10T428/12708 , H01L2924/01083 , H01L2924/0105 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599
Abstract: 本发明提供一种焊料、焊接方法和半导体器件，所述焊料包含：Sn（锡）；45wt%至65wt%的Bi（铋）；0.01wt%至0.1wt%的Zn（锌），和0.3wt%至0.8wt%的Sb（锑）。
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公开(公告)号：CN103178037A
公开(公告)日：2013-06-26
申请号：CN201210429510.1
申请日：2012-10-31
Applicant: 富士通株式会社
IPC: H01L23/488 , H01L23/498 , H05K1/11
CPC classification number: H01L24/16 , H01L23/49811 , H01L23/49838 , H01L23/49866 , H01L24/05 , H01L24/13 , H01L2224/0401 , H01L2224/05023 , H01L2224/05147 , H01L2224/05564 , H01L2224/05568 , H01L2224/05639 , H01L2224/13023 , H01L2224/13111 , H01L2224/16225 , H01L2224/16227 , H01L2224/16238 , H01L2224/16503 , H01L2224/16505 , H01L2924/00014 , H05K3/3436 , H01L2924/01047 , H01L2924/00012 , H01L2924/01029 , H01L2924/0105 , H01L2224/05552
Abstract: 本发明提供电子部件和电子装置。所述电子部件的连接端子的表面上覆盖有由AgSn合金制成的保护层。电子部件焊接到电路板的连接端子。
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公开(公告)号：CN103123916A
公开(公告)日：2013-05-29
申请号：CN201210376141.4
申请日：2012-09-29
Applicant: 富士通株式会社
IPC: H01L23/488 , H01L23/48 , H01L21/60
CPC classification number: H01L24/81 , H01L21/50 , H01L23/3128 , H01L23/49816 , H01L23/49827 , H01L23/49866 , H01L23/5383 , H01L24/13 , H01L24/16 , H01L24/73 , H01L25/0655 , H01L25/0657 , H01L2224/0401 , H01L2224/05647 , H01L2224/13111 , H01L2224/16145 , H01L2224/16148 , H01L2224/16238 , H01L2224/16506 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/81002 , H01L2224/81065 , H01L2224/81075 , H01L2224/81191 , H01L2224/8121 , H01L2224/8142 , H01L2224/81439 , H01L2224/81444 , H01L2224/81447 , H01L2224/81455 , H01L2224/81457 , H01L2224/81464 , H01L2224/81469 , H01L2224/81805 , H01L2224/81893 , H01L2224/81931 , H01L2224/83815 , H01L2225/0651 , H01L2225/06513 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/15192 , H01L2924/15311 , H01L2924/351 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/01083
Abstract: 本发明涉及半导体器件、电子器件以及半导体器件制造方法。所述半导体器件包括：连接构件，该连接构件包括形成在连接构件的主表面上的第一焊垫；半导体芯片，该半导体芯片包括其上形成第二焊垫的电路形成表面，该芯片安装在连接构件上使得电路形成表面面向主表面；以及钎料凸块，该钎料凸块连接第一焊垫和第二焊垫并且由包含Bi和Sn的金属制成，其中该块包括形成为靠近第二焊垫的第一界面层、形成为靠近第一焊垫的第二界面层、形成为靠近界面层中的任一个的第一中间区域，以及形成为靠近界面层中的另一个并且形成为靠近第一中间区域的第二中间区域；在第一中间区域中，Bi浓度高于Sn浓度；而在第二中间区域中，Sn浓度高于Bi浓度。
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公开(公告)号：CN102623440A
公开(公告)日：2012-08-01
申请号：CN201110460504.8
申请日：2011-12-31
Applicant: 富士通株式会社
Inventor： 赤松俊也
IPC: H01L25/00 , H01L25/065 , H01L23/48 , H01L23/498 , H01L21/60 , H01L21/50
CPC classification number: H01L25/0657 , H01L21/76898 , H01L23/481 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/48 , H01L24/73 , H01L24/81 , H01L25/0652 , H01L25/50 , H01L29/0657 , H01L2224/02372 , H01L2224/0401 , H01L2224/05548 , H01L2224/05567 , H01L2224/05571 , H01L2224/05573 , H01L2224/05624 , H01L2224/11002 , H01L2224/1147 , H01L2224/13006 , H01L2224/13024 , H01L2224/13025 , H01L2224/13027 , H01L2224/1308 , H01L2224/13082 , H01L2224/131 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/14181 , H01L2224/16141 , H01L2224/16147 , H01L2224/16148 , H01L2224/16238 , H01L2224/1624 , H01L2224/1703 , H01L2224/17051 , H01L2224/17181 , H01L2224/45144 , H01L2224/48095 , H01L2224/48227 , H01L2224/48599 , H01L2224/73204 , H01L2224/73207 , H01L2224/73265 , H01L2224/81136 , H01L2224/8114 , H01L2224/81192 , H01L2224/81193 , H01L2224/81815 , H01L2224/81986 , H01L2224/83102 , H01L2224/9201 , H01L2224/94 , H01L2224/96 , H01L2225/0651 , H01L2225/06513 , H01L2225/06541 , H01L2225/06555 , H01L2225/06572 , H01L2225/06575 , H01L2924/00013 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/15159 , H01L2924/15321 , H01L2924/15787 , H01L2924/1579 , H01L2924/351 , H05K1/18 , H05K1/181 , H05K2201/09063 , H05K2201/1053 , H05K2201/10545 , H05K2201/10674 , H01L2224/13099 , H01L2224/11 , H01L2224/05099 , H01L2224/13599 , H01L2224/05599 , H01L2224/29099 , H01L2224/29599 , H01L2224/81 , H01L2924/00012 , H01L2224/48624 , H01L2924/00 , H01L2224/05552 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
Abstract: 公开了一种半导体装置、制造半导体装置的方法和电子装置。该半导体装置包括半导体元件和电子元件。半导体元件具有第一突出电极，并且电子元件具有第二突出电极。基底被布置在半导体元件与电子元件之间。基底具有通孔，第一和第二突出电极配合在通孔中。第一和第二突出电极在基底的通孔内连接到一起。
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Patent Agency Ranking
公开(公告)号：CN102615446A
公开(公告)日：2012-08-01
申请号：CN201110460651.5
申请日：2011-12-31
Applicant: 富士通株式会社
IPC: B23K35/26 , H05K3/34 , H01L23/488
CPC classification number: H05K3/3463 , B23K35/0244 , B23K35/262 , B23K35/264 , B23K2101/36 , B23K2101/40 , C22C12/00 , C22C13/00 , C22C30/04 , C22C30/06 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2224/13099 , H01L2224/13111 , H01L2224/13113 , H01L2224/16225 , H01L2224/16227 , H01L2224/16506 , H01L2224/81065 , H01L2224/81097 , H01L2224/81192 , H01L2224/81211 , H01L2224/81805 , H01L2224/81815 , H01L2924/00013 , H01L2924/01006 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/01051 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/15311 , Y10T428/12708 , H01L2924/01083 , H01L2924/0105 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599
Abstract: 本发明提供一种焊料、焊接方法和半导体器件，所述焊料包括Sn(锡)、Bi(铋)和Zn(锌)，其中所述焊料具有0.01wt％至0.1wt％的Zn含量。
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公开(公告)号：CN103178037B
公开(公告)日：2016-03-23
申请号：CN201210429510.1
申请日：2012-10-31
Applicant: 富士通株式会社
IPC: H01L23/488 , H01L23/498 , H05K1/11
CPC classification number: H01L24/16 , H01L23/49811 , H01L23/49838 , H01L23/49866 , H01L24/05 , H01L24/13 , H01L2224/0401 , H01L2224/05023 , H01L2224/05147 , H01L2224/05564 , H01L2224/05568 , H01L2224/05639 , H01L2224/13023 , H01L2224/13111 , H01L2224/16225 , H01L2224/16227 , H01L2224/16238 , H01L2224/16503 , H01L2224/16505 , H01L2924/00014 , H05K3/3436 , H01L2924/01047 , H01L2924/00012 , H01L2924/01029 , H01L2924/0105 , H01L2224/05552
Abstract: 本发明提供电子部件和电子装置。所述电子部件的连接端子的表面上覆盖有由AgSn合金制成的保护层。电子部件焊接到电路板的连接端子。
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公开(公告)号：CN103123916B
公开(公告)日：2015-08-19
申请号：CN201210376141.4
申请日：2012-09-29
Applicant: 富士通株式会社
IPC: H01L23/488 , H01L23/48 , H01L21/60
CPC classification number: H01L24/81 , H01L21/50 , H01L23/3128 , H01L23/49816 , H01L23/49827 , H01L23/49866 , H01L23/5383 , H01L24/13 , H01L24/16 , H01L24/73 , H01L25/0655 , H01L25/0657 , H01L2224/0401 , H01L2224/05647 , H01L2224/13111 , H01L2224/16145 , H01L2224/16148 , H01L2224/16238 , H01L2224/16506 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/81002 , H01L2224/81065 , H01L2224/81075 , H01L2224/81191 , H01L2224/8121 , H01L2224/8142 , H01L2224/81439 , H01L2224/81444 , H01L2224/81447 , H01L2224/81455 , H01L2224/81457 , H01L2224/81464 , H01L2224/81469 , H01L2224/81805 , H01L2224/81893 , H01L2224/81931 , H01L2224/83815 , H01L2225/0651 , H01L2225/06513 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/15192 , H01L2924/15311 , H01L2924/351 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/01083
Abstract: 本发明涉及半导体器件、电子器件以及半导体器件制造方法。所述半导体器件包括：连接构件，该连接构件包括形成在连接构件的主表面上的第一焊垫；半导体芯片，该半导体芯片包括其上形成第二焊垫的电路形成表面，该芯片安装在连接构件上使得电路形成表面面向主表面；以及钎料凸块，该钎料凸块连接第一焊垫和第二焊垫并且由包含Bi和Sn的金属制成，其中该块包括形成为靠近第二焊垫的第一界面层、形成为靠近第一焊垫的第二界面层、形成为靠近界面层中的任一个的第一中间区域，以及形成为靠近界面层中的另一个并且形成为靠近第一中间区域的第二中间区域；在第一中间区域中，Bi浓度高于Sn浓度；而在第二中间区域中，Sn浓度高于Bi浓度。
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公开(公告)号：CN102623440B
公开(公告)日：2015-05-20
申请号：CN201110460504.8
申请日：2011-12-31
Applicant: 富士通株式会社
Inventor： 赤松俊也
IPC: H01L25/00 , H01L25/065 , H01L23/48 , H01L23/498 , H01L21/60 , H01L21/50
CPC classification number: H01L25/0657 , H01L21/76898 , H01L23/481 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/48 , H01L24/73 , H01L24/81 , H01L25/0652 , H01L25/50 , H01L29/0657 , H01L2224/02372 , H01L2224/0401 , H01L2224/05548 , H01L2224/05567 , H01L2224/05571 , H01L2224/05573 , H01L2224/05624 , H01L2224/11002 , H01L2224/1147 , H01L2224/13006 , H01L2224/13024 , H01L2224/13025 , H01L2224/13027 , H01L2224/1308 , H01L2224/13082 , H01L2224/131 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/14181 , H01L2224/16141 , H01L2224/16147 , H01L2224/16148 , H01L2224/16238 , H01L2224/1624 , H01L2224/1703 , H01L2224/17051 , H01L2224/17181 , H01L2224/45144 , H01L2224/48095 , H01L2224/48227 , H01L2224/48599 , H01L2224/73204 , H01L2224/73207 , H01L2224/73265 , H01L2224/81136 , H01L2224/8114 , H01L2224/81192 , H01L2224/81193 , H01L2224/81815 , H01L2224/81986 , H01L2224/83102 , H01L2224/9201 , H01L2224/94 , H01L2224/96 , H01L2225/0651 , H01L2225/06513 , H01L2225/06541 , H01L2225/06555 , H01L2225/06572 , H01L2225/06575 , H01L2924/00013 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/15159 , H01L2924/15321 , H01L2924/15787 , H01L2924/1579 , H01L2924/351 , H05K1/18 , H05K1/181 , H05K2201/09063 , H05K2201/1053 , H05K2201/10545 , H05K2201/10674 , H01L2224/13099 , H01L2224/11 , H01L2224/05099 , H01L2224/13599 , H01L2224/05599 , H01L2224/29099 , H01L2224/29599 , H01L2224/81 , H01L2924/00012 , H01L2224/48624 , H01L2924/00 , H01L2224/05552 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
Abstract: 公开了一种半导体装置、制造半导体装置的方法和电子装置。该半导体装置包括半导体元件和电子元件。半导体元件具有第一突出电极，并且电子元件具有第二突出电极。基底被布置在半导体元件与电子元件之间。基底具有通孔，第一和第二突出电极配合在通孔中。第一和第二突出电极在基底的通孔内连接到一起。基底具有绝缘膜，绝缘膜覆盖第一通孔的侧壁并且暴露在第一通孔内，并且第一突出电极的直径和第二突出电极的直径小于第一通孔的直径。
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公开(公告)号：CN101127314A
公开(公告)日：2008-02-20
申请号：CN200710008067.X
申请日：2007-02-09
Applicant: 富士通株式会社
IPC: H01L21/60
CPC classification number: H01L24/05 , H01L21/563 , H01L23/3128 , H01L23/3171 , H01L23/49816 , H01L23/5222 , H01L23/5329 , H01L24/03 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2224/0401 , H01L2224/05073 , H01L2224/05568 , H01L2224/05624 , H01L2224/13023 , H01L2224/131 , H01L2224/13111 , H01L2224/16 , H01L2224/73203 , H01L2224/73204 , H01L2224/81011 , H01L2224/81204 , H01L2224/81211 , H01L2224/81801 , H01L2924/00013 , H01L2924/0002 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/12044 , H01L2924/15311 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/00014 , H01L2224/13099 , H01L2224/29099 , H01L2224/05552
Abstract: 一种半导体元件的安装方法及半导体器件的制造方法，该安装方法用以经由不含铅(Pb)的外部连接凸电极将半导体元件安装在布线板上。该安装方法包括如下步骤：应用回流热处理以使半导体元件的外部连接凸电极与布线板相连接，然后以小于等于0.5℃/s的冷却速率冷却相连接的半导体元件和布线板。
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